(chahialesienininama ick hemttantin . , 01682998 ACRIAN INC 4? DE Poraesss OOOLee 4 nam metintete YD mo 3 2-8 Tes. + trea = GENERAL DESCRIPTION The 2023-3 is an internally matched common base transistor providing 3 watts of RF CW Output power across the 2000-2300 MHz band. This hermetically sealed transistor is specifically designed for telemetry and telecommunication applications. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25% Case Temperature 11 W Maximum Voltage and Current BVces Collector to Emitter Voltage 45V BVebo Emitter to Base Voltage 3.5 V Ic Collector Current 0.5A Maximum Temperatures Storage Temperature -65 to +200C. Operating JunctionTemperature +200C Li: DIM {Millimeter} TOL | Inches L2:E L3:B M | 4.08 REF | .160 1.27x 13 [050 x O |1.27 13 | .050 ee eeeeee ener eee reer errr rere ee 490 Race Street, San Jose, CA 95126 Phone (408) 294-4200, TWX (910) 3398-2172 REVA JULY87 Ewenny Rd., Bridgend, Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 404ee ELECTRICAL CHARACTERISTICS ' {0182998 ACRIAN INC as Stn tae D SYMBOL CHARACTERISTICS TEST CONDITIONS MIN. TYP. MAX. UNITS Pout Power Output Vec = 22V . 3.0 Watts Pin Power Input 0.6 Watts Pg Power Gain Pout = 3.0W 7.0 cB Ne Collector Eftici Voom 22V 35 % ollector Efficiency fe 2.0-2.3 GHz lo VSWR Load Mismatch Tolerance co 11 BVebo Breakdown Voltage Ic= OA, lox 20mMA 3.5 Volts (Emitter to Base) , BVces Breakdown Voltage Voe= 0A, lew 2mA (Collector to Emitter) 45 Volts Icbo Collector Leakage Current lex OA, Veb=22V 1.0 mA Capacitance- = - Cob Collector to Base t= 1.0MHz, Veb = 22V 5.0 pF Ne DC-Current Gain Vee = 5V, Ic = 200mA 10 120 8jc Thermal Resistance To = +25 C 16 cw Note 1: Te = +25C LOS SPECIFICATIONS MAY BE SUBJECT TO CHANGE WITHOUT NOTICE