84 DER 3465674 0027810 1 Lr 84D 27810 D FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR Hmm 4 IC 2N6763/2N6764 - 39-73 SAIRCHILD N-Channel Power MOSFETs, A Schlumbe Cc | rger Company 38 A, 60 V/100 V | Power And Discrete Division | Description TO-204AE | These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed 8 4 applications, such as switching power supplies, UPS, AC 4 and DC motor controls, relay and solenoid driver and high energy pulse circuits. Vas Rated at +20 V o S Silicon Gate for Fast Switching Speeds is00020F Ipss. Rosion) Specified at Elevated Temperature 2N6763 Rugged 2N6764 @ Low Drive Requirements @ Ease of Paralleling t Maximum Ratings . Rating Rating i Symbol Characteristic 2N6764 2N6763 Unit : Vpss Drain to Source Voltage 100 60 Vv Vper Drain to Gate Voltage 100 60 Vv Res = 1.0 M2 Ves Gate to Source Voltage +20 +20 Vv Ty, Tstg | Operating Junction and -55 to +150 -55 to +150 C Storage Temperatures T Maximum Lead Temperature 300 300 i for Soldering Purposes, 1/16 From Case for 10 s i Maximum On-State Characteristics Roston) | Static Drain-to-Source 0.055 0.08 2 . On Resistance | Ib Drain Current A Continuous at To = 25C 38 31 Continuous at Tc = 100C 24 20 lbw Pulsed 70? 607 Maximum Thermal Characteristics : Rec Thermal Resistance, 0.83 0.83 C/W i Junction to Case : Pp Total Power Dissipation Ww : at To = 25C 150 150 : at Tc = 100C 60 60 Linear Derating Factor 1.2 1.2 W/C Notes All values are JEDEC registered except as noted. For information conceming connection diagram and package outline, refer to Section 7. 2-23. FAIRCHILD SEMICONDUCTOR ay pe auesb74 Ooa7a11 3 I 3469674 FAIRCHILD SEMICONDUCTOR ~ 84D 27811 OD, 2N6763/2N6764 T-39-13 Electrical Characteristics (To = 25C unless otherwise noted) pe aT ie att Symbol Characteristic Min | Max | Unit Test Conditions Off Characteristics Vieryposs | Drain Source Breakdown Voltage Vv Ves =0 V, Ib=1m 2N6764 100? 2N6763 60? ; Ipss Zero Gate Voltage Drain Current 1 mA Vps = Rated Voss, Vag = 0 V 4 Vps = Rated Voss, . Vas =0 V, To = 126C lass Gate-Body Leakage Current +100 nA Ves = +20 V, Vpg=0 V On Characteristics Vesith) Gate Threshold Voltage 2.0 4.0 Vv Ip=1 mA, Vos, = Ves Rpscon) | Static Drain-Source On-Resistance' 2 Ves = 10 V 2N6764 0.055 IDp=24 A 2N6763 0.080 Ip=20 A 2N6764 0.094 Ip =24 Ai To= 125C 2N6763 0.136 Ip=20 A; To= 125C Vpscen) | Drain-Source On-Voltage! v Veg = 10 V : 2N6764 2.09 Ip=38 A i 2N6763 2.48 ID=31A Dts Forward Transconductance! 9.0 27 ) Vos #15 V, Ip=24 A Dynamic Characteristics Ciss Input Capacitance 1000 3000 pF Vos = 25 V, Ves =0 V Cass Output Capacitance 500 1500 pF f= 1.0 MHz Crss Reverse Transfer Capacitance 150 500 pF Switching Characteristics (To = 25C, Figures 9, 10) taon) Turn-On Delay Time 35 ns Vop = 24 V, Ip=24A t Rise Time 100 ns Ro. i. Raen=4.7 9 taott Turn-Off Delay Time 126 ns t Fall Time 100 ns Qy Total Gate Charge 1207 nc Vag=10 V, Ip=50A Vop = 55 V 2-24FAIRCHILD SEMICONDUCTOR ay ve 34ub9b74 Goe27ale 5 Ir 3469674 FAIRCHILD SEMICONDUCTOR 84D 27812 2N6763/2N6764 : T-39-13 L iE i i Electrical Characteristics (Cont) (Tc = 25C unless otherwise noted) Symbol! Characteristic | Min Typ | Max | Unit Test Conditions / Source-Drain Diode Characteristics Is Continuous Source Current A 2N6764 38 2N6763 31 ism Pulsed Source Current A E 2N6764 70 2N6763 60 Vsp Diode Forward Voltage Vv Veg=0 V 2N6764 0.95 1.9 Ig =38 A 2N6763 0.90 1.8 Is=31A : tr Reverse Recovery Time 5002 ns Veg = 0 V, Ty = 150C i Ip =Igy, dic/dt = 100 A/pS Qar Reverse Recovery Charge 10? uc Vas =0 V, Ty= 150C Ip =Igy, die/dt = 100 A/pS Notes 4. Pulse test: Pulse width <20 ys, Duty cycle <2% 2. Non-JEDEC registered value. Typical Performance Curves Figure 2 Static Drain to Source Resistance \ Figure 1 Output Characteristics vs Drain Current , 0.14 ; v = 10V uw 0.42 5 4 8 0.10 5 ef z 23 0.08 oO a z 2% 008 = a Ty = 25C 4 } 0.04 & Ty = -55C 0.02 oO 04 0.8 1.2 1.6 2.0 *5 4 @ 12 16 20 24 28 32 36 40 VosDRAIN SOURCE VOLTAGEV (pb DRAIN CURRENTA PCIOIRE PCIOIaCE De 2-25FAIRCHILD SEMICONDUCTOR [ or av emsne Tey sone caeenevenennens Te WOE a Tym MemeccourT TY KOMEN HT Fiera ams rBrAERCORGL AAT 3469674 FAIRCHILD SEMICONDUCTOR ~ ay pM aybab74 Oo IDUCTOR 84D 27813 2N6763/2N6764 T-39-13 e?ala D = Typical Performance Curves (Cont.) Figure 3 Transfer Characteristics ry 32 24 IpDRAIN CURRENTA 2 a 4 5 6 7 8 @ VosGATE TO SOURCE VOLTAGEV PCIOISOF Figure 5 Capacitance vs Drain to Source Voltage 10+ & CCAPACITANCEpF . _ & we? 5 1908 2 5 10? VpsDRAIN TO SOURCE VOLTAGEV PCIOISOE Figure 7 Forward Blased Safe Operating Area 102 rs 5 t 5 Zz 2 AREA MAY g BY c > Oo 40! 3 6 5s 1 2 = Ty< 150C 2 TsinaLe PULSE === CURRENT LIMITED mw 2 5 101 2 5 102 VosDRAIN TO SOURCE VOLTAGEV PCLISZOF Figure 4 Temperature Variation of Gate to Source Threshold Voltage rt e = iv - ~ o 2 o > 9 a NORMALIZED GATE THRESHOLD VOLTAGE o 50 0 50 100 150 TyJUNGTION TEMPERATUREG PCOSE4 IF Figure 6 Gate to Source Voltage vs Total Gate Charge VasGATE TO SOURCE VOLTAGEV 0 40 8 120 160 Qg-TOTAL GATE CHARGEnc PoIni70F Figure & Transient Thermal Resistance vs Time 10! 2 < z w 10 EB 5 | ag ge a5 ra @ 10-1 = ae! ~ ta N Duty Factor, O = ' curves sppiy to train of heating pulses 10-2 sree to-" 400 108 102 103 10 tTIMEms PCIO1S0F ney 2-26FAIRCHILD SEMICONDUCTOR ay ref J4L9b74 OO27aL4 4 i | 3469674 FAIRCHILD SEMICONDUCTOR 84D 27814 96 763/2N6764 D T-39-13 Typical! Electrical Characteristics Figure 9 Switching Test Circuit Figure 10 Switching Waveforms Vin Voo OUTPUT, Vour INVERTED INPUT, Ving FHC RAITT 2-27 ecg