
SPEC NO: DSAM8463 REV NO: V.1 A DATE: APR/10/2013 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.Liu ERP: 1301001957
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
*Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA Description
Min. Typ.
Hyper Red (AlGaInP) WHITE DIFFUSED
88000 260000 Common Cathode,Rt.
Hand Decimal.
*31000 *70000
SC10-21SURKWA
Absolute Maximum Ratings at TA=25° C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3.Wavelength value is traceable to the CIE127-2007 compliant national standards.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Hyper Red 645 nm IF=20mA
λD [1] Dominant Wavelength Hyper Red 630 nm IF=20mA
Δλ1/2 Spectral Line Half-width Hyper Red 28 nm IF=20mA
C Capacitance Hyper Red 35 pF VF=0V;f=1MHz
VF [2] Forward Voltage
(DP) Hyper Red 3.9
(1.95)
5.0
(2.5) V IF=20mA
IR Reverse Current
(Per chip) Hyper Red 10
(10) uA VR=5V
(VR=5V)
Parameter Hyper Red Units
Power dissipation
(DP)
150
(75) mW
DC Forward Current 30 mA
Peak Forward Current [1] 185 mA
Reverse Voltage
(Per chip)
5
(5) V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds