1
Features
•Low-voltage and Standard-voltage Operation
– 2.7 (VCC = 2.7V to 5.5V)
– 1.8 (VCC = 1.8V to 3.6V)
•Internally Organized as 32,768 x 8
•2-wire Serial Interface
•Schmitt Trigger, Filtered Inputs for Noise Suppression
•Bidirectional Data Transfer Protocol
•1 MHz (5V), 400 kHz (2.7V, 2.5V) and 100 kHz (1.8V) Compatibility
•Write Protect Pin for Hardware and Software Data Protection
•64-byte Page Write Mode (Partial Page Writes Allowed)
•Self-timed Write Cycle (5 ms Max)
•High Reliability
– Endurance: One Million Write Cycles
– Data Retention: 40 Years
•Extended Temperature and Lead-free/Halogen-free Devices Available
•8-lead JEDEC PDIP, 8-lead JEDEC 12
•SOIC, 8-lead MAP, 8-lead TSSOP and 8-ball dBGA2TM Packages
Description
The AT24C256B provides 262,144 bits of serial electrically erasable and programma-
ble read only memory (EEPROM) organized as 32,768 words of 8 bits each. The
device’s cascadable feature allows up to 8 devices to share a com mon 2-wire bus.
The device is optimized for use in many industrial and commercial applications where
low power and low voltage operation are essential. The devices are available in
space-saving 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead MAP, 8-lead TSSOP
and 8-ball dBGA2 packages. In addition, the entire family is available in 2.7V (2.7V to
5.5V) and 1.8V (1.8V to 3.6V) versions.
2-wire Serial
EEPROM
256K (32,768 x 8)
AT24C256B
Preliminary
Rev. 0670O–SEEPR–7/04
Pin Configurations
Pin Name Function
A0–A2 Address Inputs
SDA Serial Data
SCL Serial Clock Input
WP Write Protect
NC No Connect
GND Ground
A0
A1
A2
GND
VCC
WP
SCL
SDA
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
8
7
6
5
1
2
3
4
A0
A1
A2
GND
8
7
6
5
1
2
3
4
VCC
WP
SCL
SDA
A0
A1
A2
GND
8
7
6
5
1
2
3
4
VCC
WP
SCL
SDA
A0
A1
A2
GND
8-lead PDIP 8-lead SOIC
8-lead dBGA2
8-lead MAP
A0
A1
A2
GND
VCC
WP
SCL
SDA
1
2
3
4
8
7
6
5
8-lead TSSOP
2AT24C256B
0670O–SEEPR–7/04
Block Diagram
Absolute Maximum Ratings*
Operating Temperature......................................−55°C to +125°C*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only;
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Storage Temperature .........................................−65°C to +150°C
Voltage on Any Pin
with Respect to Ground........................................ −1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
3
AT24C256B
0670O–SEEPR–7/04
Pin Description SERIAL CLOCK (SCL): The SCL input is used to positive-edge clock data into each
EEPROM device and negative-edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-
drain driven and may be wire-ORed with any number of other open-drain or open-collector
devices.
DEVICE/ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device address inputs that
are hardwired or left not connected for hardware compatibility with other AT24CXX devices.
When the pins are hardwired, as many as eight 256K devices may be addressed on a single
bus system (device addressing is discussed in detail in
Device Addressing,
page 8). If the pins
are left floating, the A2, A1 and A0 pins will be internally pulled down to GND if the capacitive
coupling to the circuit board VCC plane is <3 pF. If coupling is >3 pF, Atmel recommends con-
necting the address pins to GND.
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal
write operations. When WP is connected high to VCC, all write operations to the memory are
inhibited. If the pin is left floating, the WP pin will be internally pulled down to GND if the
capacitive coupling to the circuit board VCC plane is <3 pF. If coupling is >3 pF, Atmel recom-
mends connecting the pin to GND.
Memory
Organization
AT24C256B, 256K SERIAL EEPROM: The 256K is internally organized as 512 pages of 64-
bytes each. Random word addressing requires a 15-bit data word address.
4AT24C256B
0670O–SEEPR–7/04
Pin Capacitance(1)
Note: 1. This parameter is characterized and is not 100% tested.
DC Characteristics(1)
Notes: 1. VIL min and VIH max are reference only and are not tested.
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V.
Symbol Test Condition Max Units Conditions
CI/O Input/Output Capacitance (SDA) 8 pF VI/O = 0V
CIN Input Capacitance (A0, A1, SCL) 6 pF VIN = 0V
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +1.8V to +5.5V; TAE= −40°C to +125°C,
VCC = +2.7V to +5.5V(unless otherwise noted).
Symbol Parameter Test Condition Min Typ Max Units
VCC1 Supply Voltage 1.8 3.6 V
VCC2 Supply Voltage 2.5 5.5 V
VCC3 Supply Voltage 4.5 5.5 V
ICC1 Supply Current VCC = 5.0V READ at 400 kHz 1.0 2.0 mA
ICC2 Supply Current VCC = 5.0V WRITE at 400 kHz 2.0 3.0 mA
ISB1 Standby Current
(1.8V option)
VCC = 1.8V VIN = VCC or VSS
0.2 µA
VCC = 3.6V 2.0
ISB2 Standby Current
(2.5V option)
VCC = 2.5V VIN = VCC or VSS
0.5 µA
VCC = 5.5V 6.0
ISB3 Standby Current
(5.0V option) VCC = 4.5 - 5.5V VIN = VCC or VSS 6.0 µA
ILI Input Leakage Current VIN = VCC or VSS 0.10 3.0 µA
ILO Output Leakage
Current VOUT = VCC or VSS 0.05 3.0 µA
VIL Input Low Level(1) -0.6 VCC x 0.3 V
VIH Input High Level(1) VCC x 0.7 VCC + 0.5 V
VOL2 Output Low Level VCC = 3.0V IOL = 2.1 mA 0.4 V
VOL1 Output Low Level VCC = 1.8V IOL = 0.15 mA 0.2 V
5
AT24C256B
0670O–SEEPR–7/04
AC Characteristics – Industrial Temperature
Notes: 1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions:
RL (connects to VCC): 1.3 kΩ (2.5V, 5V), 10 kΩ (1.8V)
Input pulse voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.5 VCC
Applicable over recommended operating range from TAI = −40°C to +85°C, VCC = +1.8V to +5.5V, CL = 100 pF (unless oth-
erwise noted). Test conditions are listed in Note 2.
Symbol Parameter
1.8-volt 2.5-volt 5.0-volt
UnitsMin Max Min Max Min Max
fSCL Clock Frequency, SCL 400 1000 1000 kHz
tLOW Clock Pulse Width Low 1.3 0.4 0.4 µs
tHIGH Clock Pulse Width High 0.6 0.4 0.4 µs
tAA Clock Low to Data Out Valid 0.05 0.9 0.05 0.55 0.05 0.55 µs
tBUF Time the bus must be free before a
new transmission can start(1) 1.3 0.5 0.5 µs
tHD.STA Start Hold Time 0.6 0.25 0.25 µs
tSU.STA Start Set-up Time 0.6 0.25 0.25 µs
tHD.DAT Data In Hold Time 0 0 0 µs
tSU.DAT Data In Set-up Time 100 100 100 ns
tRInputs Rise Time(1) 0.3 0.3 0.3 µs
tFInputs Fall Time(1) 300 100 100 ns
tSU.STO Stop Set-up Time 0.6 0.25 0.25 µs
tDH Data Out Hold Time 50 50 50 ns
tWR Write Cycle Time 5 5 5 ms
Endurance(1) 25°C, Page Mode, 3.3V 1,000,000 Write
Cycles
6AT24C256B
0670O–SEEPR–7/04
Device
Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external
device. Data on the SDA pin may change only during SCL low time periods (see Figure 3 on
page 7). Data changes during SCL high periods will indicate a start or stop condition as
defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition that
must precede any other command (see Figure 4 on page 7).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Fig-
ure 4 on page 7).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a zero during the ninth clock cycle to acknowl-
edge that it has received each word.
STANDBY MODE: The AT24C256B features a low-power standby mode that is enabled upon
power-up and after the receipt of the stop bit and the completion of any internal operations.
MEMORY RESET: After an interruption in protocol, power loss or system reset, any 2-wire
part can be reset by following these steps:
1. Clock up to 9 cycles;
2. Look for SDA high in each cycle while SCL is high;
3. Create a start condition as SDA is high.
Figure 1. Bus Timing*
* SCL: Serial Clock, SDA: Serial Data I/O
7
AT24C256B
0670O–SEEPR–7/04
Figure 2. Write Cycle Timing*
* SCL: Serial Clock, SDA: Serial Data I/O
Note: 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end
of the internal clear/write cycle.
Figure 3. Data Validity
Figure 4. Start and Stop Definition
twr
(1)
STOP
CONDITION
START
CONDITION
WORDn
ACK
8th BIT
SCL
SDA
8AT24C256B
0670O–SEEPR–7/04
Figure 5. Output Acknowledge
Device
Addressing
The 256K EEPROM requires an 8-bit device address word following a start condition to enable
the chip for a read or write operation (see Figure 6 on page 9). The device address word con-
sists of a mandatory one, zero sequence for the first four most significant bits as shown. This
is common to all 2-wire EEPROM devices.
The next three bits are the A2, A1, A0 device address bits to allow as many as eight devices
on the same bus. These bits must compare to their corresponding hardwired input pins. The
A2, A1 and A0 pins use an internal proprietary circuit that biases them to a logic low condition
if the pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read operation is
initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not
made, the device will return to a standby state.
DATA SECURITY: The AT24C256B has a hardware data protection scheme that allows the
user to write protect the whole memory when the WP pin is at VCC.
Write
Operations
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit
data word, the EEPROM will output a zero. The addressing device, such as a microcontroller,
then must terminate the write sequence with a stop condition. At this time the EEPROM enters
an internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during
this write cycle and the EEPROM will not respond until the write is complete (see Figure 7 on
page 10).
PAGE WRITE: The 256K EEPROM is capable of 64-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to 63 more data words. The
EEPROM will respond with a zero after each data word received. The microcontroller must ter-
minate the page write sequence with a stop condition (see Figure 8 on page 10).
9
AT24C256B
0670O–SEEPR–7/04
The data word address lower 6 bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the
following byte is placed at the beginning of the same page. If more than 64 data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten. The address “roll over” during write is from the last byte of the current page to the
first byte of the same page.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond
with a zero, allowing the read or write sequence to continue.
Read
Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to one. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll
over” during read is from the last byte of the last memory page, to the first byte of the first
page.
Once the device address with the read/write select bit set to one is clocked in and acknowl-
edged by the EEPROM, the current address data word is serially clocked out. The
microcontroller does not respond with an input zero but does generate a following stop condi-
tion (see Figure 9 on page 10).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition.
The microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a zero but does generate a fol-
lowing stop condition (see Figure 10 on page 10).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-
dom address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory
address limit is reached, the data word address will “roll over” and the sequential read will con-
tinue. The sequential read operation is terminated when the microcontroller does not respond
with a zero but does generate a following stop condition (see Figure 11 on page 11).
Figure 6. Device Address
MSB
1 0 1 0 A2 A1 A0 R/W
LSB
10 AT24C256B
0670O–SEEPR–7/04
Figure 7. Byte Write
Figure 8. Page Write
Notes: (* = DON’T CARE bit))
Figure 9. Current Address Read
Figure 10. Random Read
Notes: (* = DON’T CARE bit)
11
AT24C256B
0670O–SEEPR–7/04
Figure 11. Sequential Read
12 AT24C256B
0670O–SEEPR–7/04
Note: For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables.
AT24C256B Ordering Information
Ordering Code Package Operation Range
AT24C256B-10PI-2.7
AT24C256BN-10SI-2.7
AT24C256BU2-10UI-2.7
AT24C256B-10TI-2.7
AT24C256BY1-10YI-2.7
8P3
8S1
8U2-1
8A2
Industrial Temperature
(−40°C to 85°C)
AT24C256B-10PI-1.8
AT24C256BN-10SI-1.8
AT24C256BU2-10UI-1.8
AT24C256B-10TI-1.8
AT24C256BY1-10YI-1.8
8P3
8S1
8U2-1
8A2
Industrial Temperature
(−40°C to 85°C)
AT24C256BN-10SU-2.7
AT24C256BN-10SU-1.8
AT24C256B-10TU-2.7
AT24C256B-10TU-1.8
8S1
8S1
8A2
8A2
Lead-free/Halogen-free/
Industrial Temperature
(−40°C to 85°C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8S2 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8U2-1 8-ball, die Ball Grid Array Package (dBGA2)
8A2 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
8Y1 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
Options
−2.7 Low-voltage (2.7V to 5.5V)
−1.8 Low-voltage (1.8V to 3.6V)
13
AT24C256B
0670O–SEEPR–7/04
Packaging Information
8P3 – PDIP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
01/09/02
8P3 B
D
D1
E
E1
e
L
b2
b
A2 A
1
N
eA
c
b3
4 PLCS
Top View
Side View
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
A 0.210 2
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
D1 0.005 3
E 0.300 0.310 0.325 4
E1 0.240 0.250 0.280 3
e 0.100 BSC
eA 0.300 BSC 4
L 0.115 0.130 0.150 2
14 AT24C256B
0670O–SEEPR–7/04
8S1 – JEDEC SOIC
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE DRAWING NO.
R
REV.
Note:
10/7/03
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC) 8S1 B
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 – 0.25
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
A 1.35 – 1.75
b 0.31 – 0.51
C 0.17 – 0.25
D 4.80 – 5.00
E1 3.81 – 3.99
E 5.79 – 6.20
e 1.27 BSC
L 0.40 – 1.27
∅ 0˚ – 8˚
∅
Top View
End View
Side View
eB
D
A
A1
N
E
1
C
E1
L
15
AT24C256B
0670O–SEEPR–7/04
8U2-1 – dBGA2
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE DRAWING NO.
R
REV.
PO8U2-1
A
6/24/03
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
A 0.81 0.91 1.00
A1 0.15 0.20 0.25
A2 0.40 0.45 0.50
b 0.25 0.30 0.35 1
D 2.35 BSC
E 3.73 BSC
e 0.75 BSC
e1 0.74 REF
d 0.75 BSC
d1 0.80 REF
1. Dimension 'b' is measured at the maximum solder ball diameter.
This drawing is for general information only.
d
A
Side View
Top View
Bottom View
8 Solder Balls
1
A
B
C
D
2
(e1)
e
A1 BALL PAD CORNER
(d1)
1. b
A1
A2
D
A1 BALL PAD CORNER
E
16 AT24C256B
0670O–SEEPR–7/04
8Y1 – MAP
A – – 0.90
A1 0.00 – 0.05
D 4.70 4.90 5.10
E 2.80 3.00 3.20
D1 0.85 1.00 1.15
E1 0.85 1.00 1.15
b 0.25 0.30 0.35
e 0.65 TYP
L 0.50 0.60 0.70
PIN 1 INDEX AREA
D
E
A
A1 b
876
e
5
L
D1
E1
PIN 1 INDEX AREA
1234
A
Top View End View Bottom View
Side View
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package
(MAP) Y1 C
8Y1
2/28/03
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN NOM MAX
NOTE
17
AT24C256B
0670O–SEEPR–7/04
8A2 – TSSOP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
5/30/02
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
D 2.90 3.00 3.10 2, 5
E 6.40 BSC
E1 4.30 4.40 4.50 3, 5
A – – 1.20
A2 0.80 1.00 1.05
b 0.19 – 0.30 4
e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
8A2 B
Side View
End View
Top View
A2
A
L
L1
D
123
E1
N
b
Pin 1 indicator
this corner
E
e
Printed on recycled paper.
0670O–SEEPR–7/04 xM
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
Atmel Corporation Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Regional Headquarters
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Memory
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
ASIC/ASSP/Smart Cards
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Literature Requests
www.atmel.com/literature
© Atmel Corporation 2004. All rights reserved. Atmel® and combinations thereof, are the registered trademarks, and dBGA2™ is the
trademark of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others.
