M16C/63 Group
RENESAS MCU R01DS0033EJ0220
Rev.2.20
Nov 01, 2012
Datasheet
R01DS0033EJ0220 Rev.2.20 Page 1 of 115
Nov 01, 2012
1. Overview
1.1 Features
The M16C/63 Group microcomputer (MCU) incorporates the M16C/60 Series CPU core and flash
memory, employin g sophisticated instructions fo r a high level of ef ficiency. This MCU has 1 MB of address
space (expandable to 4 MB), and it is capable of executing instructions at high speed. In addition, the
CPU core boasts a multiplier for high-speed operation processing.
This MCU consumes low power, a nd supports operating modes that allow additional power control. The
MCU also uses an anti-noise configuration to reduce emissions of electromagnetic noise and is designed
to withstand e lectromagnetic interference (EMI). By integrating ma ny of the peripheral functions, including
the multifunction timer and serial interface, the number of system components has been reduced.
1.1.1 Applications
This MCU can be used in audio components, cameras, televisions, household appliances, office
equipment, communication devices, mobile devices, industrial equipment, and other applications.
R01DS0033EJ0220 Rev.2.20 Page 2 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
1.2 Specifications
The M16C/63 Group includes 100-pin and 80-pin packages. Table 1.1 to Table 1.4 list specifications.
Table 1.1 Specifications for the 100-Pin Package (1/2)
Item Function Description
CPU Central processing unit
M16C/60 Series core
(multiplier: 16 bit × 16 bit 32 bit,
multiply and accumulate instruction: 16 bit × 16 bit + 32 bit 32 bi t)
•Number of basic instructions: 91
•Minimum instruction execution time:
50.0 ns (f(BCLK) = 20 MHz, VCC1 = VCC2 = 2.7 to 5.5 V)
100.0 ns (f(BCLK) = 10 MHz, VCC1 = VCC2 = 2.1 to below 2.7 V)
200.0 ns (f(BCLK) = 5 MHz, VCC1 = VCC2 = 1.8 V)
•Operating mo de s: Si ng l e -chi p , me mory expansion, and microprocessor
Memory ROM, RAM, data flash See Table 1.5 “Product List”.
Voltage
Detection Vol tage detector •Power-on reset
•3 voltage detection points (detection level of voltage detection 0 and 1
selectable)
Clock Clock generator
•4 circuits: Main clock, sub clock, low-speed on-chip oscillator (125 kHz),
high-speed on-chip oscillator (40 MHz ±10%)
•Oscillation stop detection: Mai n clock oscilla tion stop/restart detection
function
•Frequency divider circuit: Divide ratio selectable from 1, 2, 4, 8, and 16
Sub clock frequency divider circuit: Divide ratio selectable from 1 and 2
•Power saving features: Wait mode, stop mode
•Real-time clock
External Bus
Expansion Bus memory expansion
•Address space: 1 MB
•External bus interface: 0 to 8 waits inserted, 4 chip select outputs,
memory area expansion function (expandable to 4 MB), 3 V and 5 V
interfaces
•Bus format: Separate bus or multiplexed bus selectable, data bus width
selectable (8 or 16 bits), number of address buses selectable (12, 16, or
20)
I/O Ports Programmable I/O ports •CMOS I/O ports: 85 (selectable pull-up resistors)
•N-channel open drain ports: 3
Interrupts •Interrupt vectors: 70
•External interrupt inputs: 17 (NMI, INT × 8, key input × 8)
•Interrupt priority levels: 7
Watchdog Timer 15-bit timer × 1 (with prescaler)
Automatic reset start function selectable
DMA DMAC •4 channels, cycle steal mode
•Trigger sources: 43
•Transfer modes: 2 (single transfer, repeat transfer)
R01DS0033EJ0220 Rev.2.20 Page 3 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Notes:
1. See Table 1.5 “Product List” for the operating temperature.
2. The CEC function indicates circuitry which supports the transmission and reception of CEC signals standardized
by the High-Definition Multimedia Interface (HDMI). HDMI and High-Definition Multimedia Interface are
registered trademarks of HDMI Licensing, LLC.
Table 1.2 Specifications for the 100-Pin Package (2/2)
Item Function Description
Timers
Timer A
16-bit timer × 5
Timer mode, event counter mode, one-shot timer mode, pulse width
modulation (PWM) mode
Event counter two-phase pulse signal processing (two-phase encoder
input) × 3
Programmable output mode × 3
Timer B 16-bit timer × 6
Timer mode, event counter mode, pulse period measurement mode,
pulse width measurement mode
Three-phase motor control
timer functions •Three-phase inverter con trol (timer A1, timer A2, timer A4, timer B2)
•On-chip dead time timer
Real-time clock •Count: seconds, minutes, hours, days of the week, months, years
•Periodic interrupt: 0.25 s, 0.5 s
•Automatic correction function
PWM function 8 bits × 2
Remote control signal receiver
•2 circuits
•4 wave pattern matchings (differentiate wave pattern for headers, data
0, data 1, and special data)
•6-byte receive buffer (1 circuit only)
•Operating frequency of 32 kHz
Serial
Interface
UART0 to UART2, UART5 to
UART7
Clock synchronous/asynchronous × 6 channels
I2C-bus, IEBus, special mode 2
SIM (UART2)
SI/O3, SI/O4 Clock synchronization only × 2 channels
Multi-master I2C-bus Interface 1 channel
CEC Functions (2) CEC transmit/receive, arbitration lost detection, ACK automatic output,
operation frequency of 32 kHz
A/D Converter 10-bit resolution × 26 channels, incl uding sample and hold function
Conversion time: 2.15 µs
D/A Converter 8-bit resolution × 2 circuits
CRC Calculator CRC-CCITT (X16 + X12 + X5 + 1),
CRC-16 (X16 + X15 + X2 + 1) compliant
Flash Memor y
•Program and erase power supply voltage: 2.7 to 5.5 V
•Program and erase cycles: 1,000 times (program ROM 1, program
ROM 2), 10,000 times (data flash)
•Program security: ROM code protect, ID code check
Debug Functions On-chip debug, on-board flash rewrite, address ma tch interrupt × 4
Operation Frequency/Sup ply Voltage 5 MHz/VCC1 = 1.8 to 5.5 V, VCC2 = 1.8 V to VCC1
10 MHz/VCC1 = 2.1 to 5.5 V, VCC2 = 2.1 V to VCC1
20 MHz/VCC1 = 2.7 to 5.5 V, VCC2 = 2.7 V to VCC1
Current Consumption Described in Electrical Chara c teristics
Operating Temperature -20°C to 85°C, -40°C to 85°C (1)
Package 100-pin QFP: PRQP0100JD-B (Previous package code: 100P6F-A)
100-pin LQFP: PLQP0100KB-A (Previous package code: 100P6Q-A)
100-pin LGA: PTLG0100KA-A (Previous package code: 100F0M)
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Nov 01, 2012
M16C/63 Group 1. Overview
Table 1.3 Specifications for the 80-Pin Package (1/2)
Item Function Description
CPU Central processing unit
M16C/60 Series core
(multiplier: 16 bit × 16 bit 32 bit,
multiply and accumulate instruction: 16 bit × 16 bit + 32 bit 32 bit)
•Number of basic instructions: 91
•Minimum instruction execution time:
50.0 ns (f(BCLK) = 20 MHz, VCC1 = 2.7 to 5.5 V)
100.0 ns (f(BCLK) = 10 MHz, VCC1 = 2.1 to below 2.7 V)
200.0 ns (f(BCLK) = 5 MHz, VCC1 = 1.8 V)
•Operating mode: Single-chip
Memory ROM, RAM, data flash See Table 1.5 “Product List”.
Voltage
Detection Vol tage detector •Power-on reset
•3 voltage detection points (detection level of voltage detection 0 and 1
selectable)
Clock Clock generator
•4 circuits: Main clock, sub clock, low-speed on-chip oscillator (125 kHz),
high-speed on-chip oscillator (40 MHz ±10%)
•Oscillation stop detection: Main clock oscillation stop/restart detection
function
•Frequency divider circuit: Divide ratio selectable from 1, 2, 4, 8, and 16
Sub clock frequency divider circuit: Divide ratio selectable from 1 and 2
•Power saving features: Wait mode, stop mode
•Real-time clock
External Bus
Expansion Bus memory expansion None
I/O Ports Programmable I/O ports •CMOS I/O ports: 68 (selectable pull-up resistors)
•N-channel open drain ports: 3
Interrupts •Interrupt vectors: 70
•External interrupt inputs: 14 (NMI, INT × 5, key input × 8)
•Interrupt priority levels: 7
Watchdog Timer 15-bit timer × 1 (with prescaler)
Automatic reset start function selectable
DMA DMAC •4 channels, cycle steal mode
•Trigger sources: 43
•Transfer modes: 2 (single transfe r, repeat transfer)
R01DS0033EJ0220 Rev.2.20 Page 5 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Notes:
1. See Table 1.5 “Product List” for the operating temperature.
2. The CEC function indicates circuitry which supports the transmission and reception of CEC signals standardized
by the High-Definition Multimedia Interface (HDMI). HDMI and High-Definition Multimedia Interface are
registered trademarks of HDMI Licensing, LLC.
Table 1.4 Specifications for the 80-Pin Package (2/2)
Item Function Description
Timers
Timer A
16-bit timer × 5
Timer mode × 5
Event counter mode, one-shot timer mode, pulse width modulation
(PWM) mode × 3
Event counter two-phase pulse signal processing (two-phase encoder
input) × 2
Programmable output mode × 1
Timer B
16-bit timer × 6
Timer mode × 6
Event counter mode, pulse period measurement mode, pulse width
measurement mode × 5
Three-phase motor control
timer functions None
Real-time clock •Count: seconds, minutes, hours, days of the week, months, years
•Periodic interrupt: 0.25 s, 0.5 s
•Automatic correction function
PWM function 8 bits × 2
Remote control signal
receiver
•2 circuits
•4 wave pattern matchings (differentiate wave pattern for headers, data 0,
data 1, and special data)
•6-byte receive buffer (1 circuit only)
•Operating frequency of 32 kHz
Serial
Interface
UART0 to UART2, UART5
Clock synchronous/asynchronous × 3 channels
I2C-bus, IEBus, special mode 2
Clock asynchronous × 1 channel
I2C-bus, IEBus, SIM
SI/O3, SI/O4 Clock synchronization only × 2 channels
(SI/O3 is used for transmission only)
Multi-master I2C-bus Interface 1 channel
CEC Functions (2) CEC transmit/receive, arbitration lost detection, ACK automatic output,
operation frequency of 32 kHz
A/D Converter 10-bit resolution × 26 channels, including sample and hold function
Conversion time: 2.15 µs
D/A Converter 8-bit resolution × 2 circuits
CRC Calculator CRC-CCITT (X16 + X12 + X5 + 1),
CRC-16 (X16 + X15 + X2 + 1) compliant
Flash Memor y
•Program and erase power supply voltage: 2.7 to 5.5 V
•Program and erase cycles: 1,000 times (program ROM 1, program ROM
2), 10,000 times (data flash)
•Program security: ROM code protect, ID code check
Debug Functions On-chip debug, on-board flash rewrite, address match interrupt × 4
Operation Frequency/Sup ply Voltage 5 MHz/VCC1 = 1.8 to 5.5 V
10 MHz/VCC1 = 2.1 to 5.5 V
20 MHz/VCC1 = 2.7 to 5.5 V
Current Consumption Described in Electrical Characteristics
Operating Temperature -20°C to 85°C, -40°C to 85°C (1)
Package 80-pin LQFP: PLQP0080KB-A (Previous package code: 80P6Q-A)
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Nov 01, 2012
M16C/63 Group 1. Overview
1.3 Product List
Table 1. 5 lists product information. Figure 1.1 shows the Part No., with Memory Size and Package, and
Figure 1.2 and Figure 1.3 shows the Marking Diagram (Top View).
(D): Under development
(P): Planning
Previous package codes are as follows:
PRQP0100JD-B: 100P6F-A
PLQP0100KB-A: 100P6Q-A
PTLG0100KA-A: 100F0M
PLQP0080KB-A: 80P6Q-A
Table 1.5 Product List As of November, 2012
Part No. ROM Capacity RAM
Capacity Package Code Remarks
Program
ROM 1 Program
ROM 2 Data flash
R5F363A6NFA
128 KB 16 KB 4 KB
× 2 blocks 12 KB
PRQP0100JD-B Operating
temperature
-20°C to 85°C
R5F363A6NFB PLQP0100KB-A
R5F363A6NLG PTLG0100KA-A
R5F363B6NFE PLQP0080KB-A
R5F363A6DFA PRQP0100JD-B Operating
temperature
-40°C to 85°C
R5F363A6DFB PLQP0100KB-A
R5F363B6DFE PLQP0080KB-A
R5F363AENFA
256 KB 16 KB 4 KB
× 2 blocks 20 KB
PRQP0100JD-B Operating
temperature
-20°C to 85°C
R5F363AENFB PLQP0100KB-A
R5F363AENLG PTLG0100KA-A
R5F363BENFE PLQP0080KB-A
R5F363AEDFA PRQP0100JD-B Operating
temperature
-40°C to 85°C
R5F363AEDFB PLQP0100KB-A
R5F363BEDFE PLQP0080KB-A
R5F363AKNFA
384 KB 16 KB 4 KB
× 2 blocks 31 KB
PRQP0100JD-B Operating
temperature
-20°C to 85°C
R5F363AKNFB PLQP0100KB-A
R5F363AKNLG PTLG0100KA-A
R5F363AKDFA PRQP0100JD-B Operating
temperature
-40°C to 85°C
R5F363AKDFB PLQP0100KB-A
R5F363AMNFA
512 KB 16 KB 4 KB
× 2 blocks 31 KB
PRQP0100JD-B Operating
temperature
-20°C to 85°C
R5F363AMNFB PLQP0100KB-A
R5F363AMNLG PTLG0100KA-A
R5F363AMDFA PRQP0100JD-B Operating
temperature
-40°C to 85°C
R5F363AMDFB PLQP0100KB-A
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Nov 01, 2012
M16C/63 Group 1. Overview
Figure 1.1 Part No., with Memory Size and Package
Figure 1.2 Marking Diagram (Top View) (1/2)
Figure 1.3 Marking Diagram (Top View) (2/2)
Package type
FA: Package PRQP01 00JD - B (100P6F-A)
FB: Package PLQP0100KB-A (100P6Q-A)
FE: Package PLQP0080KB-A (80P6Q- A)
LG: Package PTLG0100KA-A (100F0M)
Property code
N: Operating temperatur e: -20°C to 85°C
D: Operating temperatur e: -40°C to 85°C
Memory type
F: Flash memory
R 5 F 3 6 3 A 6 D FA
Renesas MCU
Renesas semiconductor
Memory capacity
Program ROM 1/RAM
6: 128 KB/12 KB
E: 256 KB/20 KB
K: 384 KB/31 KB
M: 512 KB/31 KB
16-bit MCU
Part No.
M16C/63 Group
Number of pins
A: 100 pins
B: 80 pins
M16C
R5F363A6DFA
XXXXXXX Type No.
Running No. 0 to 9, A to Z (except for I, O, Q)
Week code (from 01 to 54)
Last digit of year
(See Figure 1.1 “Part No., with Memory Size and Package”)
PRQP0100JD-B (100P6F-A), PLQP0100KB-A (100P6Q-A), PLQP0080KB- A (80P6Q-A)
R 5 F 3 6 3 A 6
N L G
X X X X X X X
J A P A N
Type No.
Running No. 0 to 9, A to Z (except for I, O, Q)
Week code (from 01 to 54)
Last digit of year
Country of production
(See Figure 1.1 “Part No., with Memory Size and Package”)
PTLG0100KA-A (100F0M)
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Nov 01, 2012
M16C/63 Group 1. Overview
1.4 Block Diagram
Figure 1.4 and Figure 1.5 show block diagrams.
Figure 1.4 Block Diagram for the 100-Pin Package
DMAC (4 channels)
Internal peripheral fun ctions UART or
clock synchronous serial I/O
(6 channels)
System clock generator
XIN-XOUT
XCIN-XCOUT
On-chip oscillator (125 kHz)
High-speed on-chip oscillator
Clock synchronou s seri al I/O
(8 bit x 2 channels)
Notes:
1. ROM size depends on MCU type.
2. RAM size depends on MCU type.
888888
Port P5Port P4Port P3Port P2Port P1Port P0
VCC2 ports
M16C/60 Series CPU core
R1H R1L
R0H R0L
R3
R2
A0
A1
FB Multiplier
ROM (1)
Memory
RAM (2)
SB
ISP
USP
INTB
PC
FLG
CRC calculator
(CRC-CCITT or CRC-16)
Three-phase motor control
circuit
8 8 8
Port P7Port P8Port P9Port P10
8
Port P6
8
Timer (16 bit)
Outputs (timer A): 5
Inputs (timer B): 6
VCC1 ports
Real-time clock
PWM function (8 bit x 2)
Remote control signal
receiver (2 circuits)
Watchdog t imer
(15 bit)
A/D converter
(10-bit resolution x 26
channels)
D/A converter
(8 bit-resolution x 2
circuits)
Multi-master I2C-bus interface
(1 channel)
CEC functi on
Voltage detector
On-chip debugger
Power-on reset
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Nov 01, 2012
M16C/63 Group 1. Overview
Figure 1.5 Block Diagram for the 80-Pin Package
DMAC (4 channels)
Internal peripheral fun ctions UART or
clock synchronous serial I/O
(3 channels)
UART (1 channel)
System clock generator
XIN-XOUT
XCIN-XCOUT
On-chip oscillator (125 kHz)
High-speed on-chip oscillator
Clock synchronou s seri al I/O
(8 bit x 2 channels)
Notes:
1. ROM size depends on MCU type.
2. RAM size depends on MCU type.
8 8848
Port P5Port P4Port P3Port P2Port P0
VCC1 ports
M16C/60 Series CPU core
R1H R1L
R0H R0L
R3
R2
A0
A1
FB Multiplier
ROM (1)
Memory
RAM (2)
SB
ISP
USP
INTB
PC
FLG
CRC calculator
(CRC-CCITT or CRC-16)
8 7 4
Port P7Port P8Port P9Port P10
8
Port P6
8
Timer (16 bit)
Outputs (timer A): 5
Inputs (timer B): 6
Real-time clock
PWM function (8 bit x 2)
Remote control signal
receiver (2 circuits)
Watchdog t imer
(15 bit)
A/D converter
(10-bit resolution x 26
channels)
D/A converter
(8-bit resolution x 2
circuits)
Multi-master I2C-bus interface
(1 channel)
CEC functi on Voltage detector
On-chip debugger
Powe r- on res e t
VCC1 ports
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Nov 01, 2012
M16C/63 Group 1. Overview
1.5 Pin Assignments
Figure 1.6 to Figure 1.9 show pin assignments. Tab le 1.6 to Table 1.9 list pin na me s.
Figure 1.6 Pin Assignment for the 100-Pin Package
56
55
54
53
52
51
1
M16C/63 Group
PRQP0100JD-B
(100P6F-A)
(Top view)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
P0_0/AN0_0/D0
P0_1/AN0_1/D1
P0_2/AN0_2/D2
P0_3/AN0_3/D3
P0_4/AN0_4/D4
P0_5/AN0_5/D5
P0_6/AN0_6/D6
P0_7/AN0_7/D7
VREF
AVSS
VCC1
XIN
XOUT
VSS
RESET
CNVSS
P8_7/XCIN
P8_6/XCOUT
BYTE
P7_4/TA2OUT/W
AVCC
P10_0/AN0/KI4
P10_1/AN1/KI5
P10_2/AN2/KI6
P10_3/AN3/KI7
P9_3/DA0/TB3IN/PWM0
P9_4/DA1/TB4IN/PWM1
P9_5/ANEX0/CLK4
P9_6/ANEX1/SOUT4
P9_1/TB1IN/PMC1/SIN3
P9_2/TB2IN/PMC0/SOUT3
P7_2/CLK2/TA1OUT/V
P8_2/INT0
P7_1/RXD2/SCL2/SCLMM/TA0IN/TB5IN (1)
P8_3/INT1
P8_5/NMI/SD/CEC (1)
P9_7/ADTRG/SIN4
P9_0/TB0IN/CLK3
P7_0/TXD2/SDA2/SDAMM/TA0OUT (1)
P8_4/INT2/ZP
P7_3/CTS2/RTS2/TA1IN/V
P7_5/TA2IN/W
P10_7/AN7/KI3
P10_6/AN6/KI2
P10_5/AN5/KI1
P10_4/AN4/KI0 P5_6/ALE
P5_5/HOLD
P5_4/HLDA
P5_3/BCLK
P5_2/RD
P5_7/RDY/CLKOUT
P6_3/TXD0/SDA0
P6_5/CLK1
P6_6/RXD1/SCL1
P6_7/TXD1/SDA1
P6_1/CLK0
P6_2/RXD0/SCL0
P6_0/TRHO/CTS0/RTS0
P6_4/CTS1/RTS1/CTS0/CLKS1
P5_0/WRL/WR
P5_1/WRH/BHE
P1_4/D12
P3_1/A9
P3_2/A10
P3_3/A11
P3_4/A12
P3_5/A13
P3_6/A14
P3_7/A15
P4_0/A16
P4_1/A17
P4_2/A18
P4_3/A19
VCC2
VSS
P7_6/TA3OUT/TXD5/SDA5
P7_7/TA3IN/CLK5
P8_0/TA4OUT/U/RXD5/SCL5
P8_1/TA4IN/U/CTS5/RTS5
P1_0/CTS6/RTS6/D8
P1_1/CLK6/D9
P1_2/RXD6/SCL6/D10
P1_3/TXD6/SDA6/D11
P4_5/CLK7/CS1
P4_4/CTS7/RTS7/CS0
P3_0/A8 [A8/D7]
P2_0/AN2_0/A0, [A0/D0], A0
P2_1/AN2_1/A1, [A 1/D1], [A1/D0]
P2_2/AN2_2/A2, [A 2/D2], [A2/D1]
P2_3/AN2_3/A3, [A 3/D3], [A3/D2]
P2_4/INT6/AN2_4/A 4, [A4/D4], [A4/D3]
P2_5/INT7/AN2_5/A 5, [A5/D5], [A5/D4]
P2_7/AN2_7/A7, [A 7/D7], [A7/D6]
See Note 3
P2_6/AN2_6/A6, [A 6/D6], [A6/D5]
P1_5/INT3/IDV/D13
P1_6/INT4/IDW/D14
P1_7/INT5/IDU/D15
P4_6/PWM0/RXD7/SCL7/CS2
P4_7/PWM1/TXD7/SDA7/CS3
VCC2 ports
VCC1 ports
Notes:
1. N-channel open drain output.
2. Check the po sition of Pin 1 by referring to ap pendix 1, Package Dimensions.
3. Pin names in brackets [ ] represent a single functional signal.
They should not be considered as two separate functional signals.
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Nov 01, 2012
M16C/63 Group 1. Overview
Figure 1.7 Pin Assignment for the 100-Pin Package
26
27
28
29
30
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
80
79
78
77
76
M16C/63 Group
PLQP0100KB-A
(100P6Q-A)
(Top view)
P0_0/AN0_0/D0
P0_1/AN0_1/D1
P0_2/AN0_2/D2
P0_3/AN0_3/D3
P0_4/AN0_4/D4
P0_5/AN0_5/D5
P0_6/AN0_6/D6
P0_7/AN0_7/D7
P1_0/CTS6/RTS6/D8
P1_1/CLK6/D9
P1_2/RXD6/SCL6/D10
VREF
AVSS
AVCC
P10_0/AN0/KI4
P10_1/AN1/KI5
P10_2/AN2/KI6
P10_3/AN3/KI7
P9_5/ANEX0/CLK4
P9_6/ANEX1/SOUT4
P9_7/ADTRG/SIN4
P10_7/AN7/KI3
P10_6/AN6/KI2
P10_5/AN5/KI1
P10_4/AN4/KI0
P1_3/TXD6/SDA6/D11
P1_4/D12
P3_1/A9
P3_2/A10
P3_3/A11
P3_4/A12
P3_5/A13
P3_6/A14
P3_7/A15
P4_0/A16
P4_1/A17
VCC2
VSS
P4_2/A18
P4_3/A19
P5_6/ALE
P5_5/HOLD
P5_4/HLDA
P5_3/BCLK
P5_2/RD
P5_7/RDY/CLKOUT
P6_3/TXD0/SDA0
P6_5/CLK1
P6_6/RXD1/SCL1
P6_7/TXD1/SDA1
P6_1/CLK0
P6_2/RXD0/SCL0
P6_0/TRHO/CTS0/RTS0
P6_4/CTS1/RTS1/CTS0/CLKS1
P5_0/WRL/WR
P5_1/WRH/BHE
P7_2/CLK2/TA1OUT/V
P7_1/RXD2/SCL2/SCLMM/TA0IN/TB5IN (1)
P7_0/TXD2/SDA2/SDAMM/TA0OUT (1)
VCC1
XIN
XOUT
VSS
RESET
CNVSS
P8_7/XCIN
P8_6/XCOUT
BYTE
P7_4/TA2OUT/W
P9_3/DA0/TB3IN/PWM0
P9_4/DA1/TB4IN/PWM1
P9_1/TB1IN/PMC1/SIN3
P9_2/TB2IN/PMC0/SOUT3
P8_2/INT0
P8_3/INT1
P8_5/NMI/SD/CEC (1)
P9_0/TB0IN/CLK3
P8_4/INT2/ZP
P7_5/TA2IN/W
P7_3/CTS2/RTS2/TA1IN/V
P7_6/TA3OUT/TXD5/SDA5
P7_7/TA3IN/CLK5
P8_0/TA4OUT/U/RXD5/SCL5
P8_1/TA4IN/U/CTS5/RTS5
P4_5/CLK7/CS1
P4_4/CTS7/RTS7/CS0
P3_0/A8 [A8/D7]
P2_0/AN2_0/A0, [A0/D0], A0
P2_1/AN2_1/A1, [A1/D1], [A1/D0]
P2_2/AN2_2/A2, [A2/D2], [A2/D1]
P2_3/AN2_3/A3, [A3/D3], [A3/D2]
P2_4/INT6/AN2_ 4/A 4, [A4/D 4 ], [ A4/ D3]
P2_5/INT7/AN2_ 5/A 5, [A5/D 5 ], [ A5/ D4]
P2_6/AN2_6/A6, [A6/D6], [A6/D5]
P2_7/AN2_7/A7, [A7/D7], [A7/D6]
See Note 3
P1_5/INT3/IDV/D13
P1_6/INT4/IDW/D14
P1_7/INT5/IDU/D15
P4_6/PWM0/RXD7/SCL7/CS2
P4_7/PWM1/TXD7/SDA7/CS3
VCC2 ports
VCC1 ports
Notes:
1. N-channel open drain output.
2. Check the position of Pin 1 by referring to appendix 1, Package Dimensions.
3. Pin names in brackets [ ] represent a single functional signal.
They should not be considered as two separate functional signals.
R01DS0033EJ0220 Rev.2.20 Page 12 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Figure 1.8 Pin Assignment for the 100-Pin Package
P1_3
PTLG0100KA-A (100F0M)
(Top view)
M16C/63 Group
(See Note 2)
VCC1 ports
VCC2 ports
P1_2 P0_7 P0_3 P10_6 P10_4 P10_1 VREF P9_5 P9_4
P1_4 P1_5 P0_6 P0_4 P0_2 P10_5 P10_2 AVCC P9_6 P9_2
P2_0 P1_7 P1_1 P1_0 P0_1 P10_3 AVSS P9_7 P9_0 BYTE
P2_2 P2_1 P2_3 P2_4 P0_5 P10_7 P10_0 P9_1 CNVSS P8_7
P2_6 P2_7 VSS P2_5 P1_6 P0_0 P9_3 P8_6 RESET XOUT
P3_0 VCC2 P3_1 P3_4 P3_5 P8_4 P8_1 VSS XIN VCC1
P3_2 P3_3 P4_4 P4_7 P5_7 P6_5 P7_6 P8_3 P8_5 (1) P8_2
P3_6 P3_7 P4_5 P5_3 P5_6 P6_2 P6_7 P7_5 P7_7 P8_0
P7_0 (1)
P4_1 P4_0 P4_6 P5_2 P5_5 P6_1 P6_4 P7_3 P7_4
P4_2 P4_3 P5_0 P5_1 P5_4 P6_0 P6_3 P6_6 P7_1 (1) P7_2 K
J
H
G
F
E
D
C
B
A
10987654321
VCC1 ports
VCC2 ports
K
J
H
G
F
E
D
C
B
A
10987654321
Notes:
1. N-channel open drain output.
2. Check the position of Pin A1 by referring to appendix 1, Package Dimensions.
R01DS0033EJ0220 Rev.2.20 Page 13 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Table 1.6 Pin Names for the 100-Pin Package (1/2)
Pin No.
Control Pin Port
I/O Pin for Peripheral Function Bus Control
Pin
FA FB LG Interrupt Timer Serial interface A/D converter,
D/A converter
1 99 B2 P9_6 SOUT4 ANEX1
2 100 A2 P9_5 CLK4 ANEX0
3 1 A1 P9_4 TB4IN/PWM1 DA1
4 2 E4 P9_3 TB3IN/PWM0 DA0
5 3 B1 P9_2 TB2IN/PMC0 SOUT3
6 4 D3 P9_1 TB1IN/PMC1 SIN3
7 5 C2 P9_0 TB0IN CLK3
8 6 C1 BYTE
9 7 D2 CNVSS
10 8 D1 XCIN P8_7
11 9 E3 XCOUT P8_6
12 10 E2 RESET
13 11 E1 XOUT
14 12 F3 VSS
15 13 F2 XIN
16 14 F1 VCC1
17 15 G2 P8_5 NMI SD CEC
18 16 F5 P8_4 INT2 ZP
19 17 G3 P8_3 INT1
20 18 G1 P8_2 INT0
21 19 F4 P8_1 TA4IN/UCTS5/RTS5
22 20 H1 P8_0 TA4OUT/U RXD5/SCL5
23 21 H2 P7_7 TA3IN CLK5
24 22 G4 P7_6 TA3OUT TXD5/SDA5
25 23 H3 P7_5 TA2IN/W
26 24 J1 P7_4 TA2OUT/W
27 25 J2 P7_3 TA1IN/VCTS2/RTS2
28 26 K1 P7_2 TA1OUT/V CLK2
29 27 K2 P7_1 TA0IN/TB5IN RXD2/SCL2/SCLMM
30 28 J3 P7_0 TA0OUT TXD2/SDA2/SDAMM
31 29 H4 P6_7 TXD1/SDA1
32 30 K3 P6_6 RXD1/SCL1
33 31 G5 P6_5 CLK1
34 32 J4 P6_4 CTS1/RTS1/CTS0/
CLKS1
35 33 K4 P6_3 TXD0/SDA0
36 34 H5 P6_2 RXD0/SCL0
37 35 J5 P6_1 CLK0
38 36 K5 P6_0 TRHO CTS0/RTS0
39 37 G6 CLKOUT P5_7 RDY
40 38 H6 P5_6 ALE
41 39 J6 P5_5 HOLD
42 40 K6 P5_4 HLDA
43 41 H7 P5_3 BCLK
44 42 J7 P5_2 RD
45 43 K7 P5_1 WRH/BHE
46 44 K8 P5_0 WRL/WR
47 45 G7 P4_7 PWM1 TXD7/SDA7 CS3
48 46 J8 P4_6 PWM0 RXD7/SCL7 CS2
49 47 H8 P4_5 CLK7 CS1
50 48 G8 P4_4 CTS7/RTS7 CS0
R01DS0033EJ0220 Rev.2.20 Page 14 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Table 1.7 Pin Names for the 100-Pin Package (2/2)
Pin No. Control
Pin Port
I/O Pin for Peripheral Function
Bus Control Pin
FA FB LG Interrupt Timer Serial interface A/D converter,
D/A converter
51 49 K9 P4_3 A19
52 50 K10 P4_2 A18
53 51 J10 P4_1 A17
54 52 J9 P4_0 A16
55 53 H9 P3_7 A15
56 54 H10 P3_6 A14
57 55 F6 P3_5 A13
58 56 F7 P3_4 A12
59 57 G9 P3_3 A11
60 58 G10 P3_2 A10
61 59 F8 P3_1 A9
62 60 F9 VCC2
63 61 F10 P3_0 A8, [A8/D7]
64 62 E8 VSS
65 63 E9 P2_7 AN2_7 A7, [A7/D7], [A7/D6]
66 64 E10 P2_6 AN2_6 A6, [A6/D6], [A6/D5]
67 65 E7 P2_5 INT7 AN2_5 A5, [A5/D5], [A5/D4]
68 66 D7 P2_4 INT6 AN2_4 A4, [A4/D4], [A4/D3]
69 67 D8 P2_3 AN2_3 A3, [A3/D3], [A3/D2]
70 68 D10 P2_2 AN2_2 A2, [A2/D2], [A2/D1]
71 69 D9 P2_1 AN2_1 A1, [A1/D1], [A1/D0]
72 70 C10 P2_0 AN2_0 A0, [A0/D0], A0
73 71 C9 P1_7 INT5 IDU D15
74 72 E6 P1_6 INT4 IDW D14
75 73 B9 P1_5 INT3 IDV D13
76 74 B10 P1_4 D12
77 75 A10 P1_3 TXD6/SDA6 D11
78 76 A9 P1_2 RXD6/SCL6 D10
79 77 C8 P1_1 CLK6 D9
80 78 C7 P1_0 CTS6/RTS6 D8
81 79 A8 P0_7 AN0_7 D7
82 80 B8 P0_6 AN0_6 D6
83 81 D6 P0_5 AN0_5 D5
84 82 B7 P0_4 AN0_4 D4
85 83 A7 P0_3 AN0_3 D3
86 84 B6 P0_2 AN0_2 D2
87 85 C6 P0_1 AN0_1 D1
88 86 E5 P0_0 AN0_0 D0
89 87 D5 P10_7 KI3 AN7
90 88 A6 P10_6 KI2 AN6
91 89 B5 P10_5 KI1 AN5
92 90 A5 P10_4 KI0 AN4
93 91 C5 P10_3 KI7 AN3
94 92 B4 P10_2 KI6 AN2
95 93 A4 P10_1 KI5 AN1
96 94 C4 AVSS
97 95 D4 P10_0 KI4 AN0
98 96 A3 VREF
99 97 B3 AVCC
100 98 C3 P9_7 SIN4 ADTRG
R01DS0033EJ0220 Rev.2.20 Page 15 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Figure 1.9 Pin Assignment for the 80-Pin Package
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
M16C/63 Group
PLQP0080KB-A
(80P6Q-A)
(Top view)
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
22
23
25
26
28
29
30
31
32
33
34
35
36
37
38
39
21
24
4061
27
P4_2
P4_3
P5_6
P5_5
P5_4
P5_3
P5_2
P5_7/CLKOUT
P6_3/TXD0/SDA0
P6_5/CLK1
P6_6/RXD1/SCL1
P6_7/TXD1/SDA1
P6_1/CLK0
P6_2/RXD0/SCL0
P6_0/TRHO/CTS0/RTS0
P6_4/CTS1/RTS1/CTS0/CLKS1
P7_1/RXD2/SCL2/TA0IN/TB5IN/SCLMM (1)
P5_0
P5_1
P7_0/TXD2/SDA2/TA0OUT/SDAMM (1)
P3_0
P3_1
P3_2
P3_3
P3_4
P3_5
P3_6
P3_7
P4_0
P4_1
VCC1
XIN
XOUT
VSS
RESET
CNVSS(BYTE)
P8_7/XCIN
P8_6/XCOUT
P7_6/TA3OUT/TXD5/SDA5
P7_7/TA3IN/CLK5
P9_3/DA0/TB3IN/PWM0
P9_4/DA1/TB4IN/PWM1
P9_5/ANEX0/CLK4
P9_2/TB2IN/PMC0/SOUT3
P8_2/INT0
P8_3/INT1
P8_1/TA4IN/CTS5/RTS5
P8_4/INT2/ZP
P8_0/TA4OUT/RXD5/SCL5
P8_5/NMI/CEC (1)
P0_1/AN0_1
P0_2/AN0_2
P0_3/AN0_3
P0_4/AN0_4
P0_5/AN0_5
P0_6/AN0_6
P0_7/AN0_7
P9_6/ANEX1/SOUT4
P9_7/ADTRG/SIN4
P9_0/TB0IN/CLK3
P2_0/AN2_0
P2_1/AN2_1
P2_2/AN2_2
P2_4/INT6/AN2_4
P2_5/INT7/AN2_5
P2_6/AN2_6
P2_7/AN2_7
P2_3/AN2_3
Notes:
1. N-channel open drain output.
2. Check the position of Pi n 1 by referring to appendix 1, Package Dimensions.
P0_0/AN0_0
VREF
AVSS
AVCC
P10_0/AN0/KI4
P10_1/AN1/KI5
P10_2/AN2/KI6
P10_3/AN3/KI7
P10_4/AN4/KI0
P10_5/AN5/KI1
P10_6/AN6/KI2
P10_7/AN7/KI3
R01DS0033EJ0220 Rev.2.20 Page 16 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Table 1.8 Pin Names for the 80-Pin Package (1/2)
Pin No. Control Pin Port I/O Pin for Peripheral Function
Interrupt Timer Serial interface A/D converter,
D/A converter
1 P9_5 CLK4 ANEX0
2 P9_4 TB4IN/PWM1 DA1
3 P9_3 TB3IN/PWM0 DA0
4P9_2TB2IN/PMC0SOUT3
5 P9_0 TB0IN CLK3
6 CNVSS
7XCINP8_7
8XCOUTP8_6
9RESET
10 XOUT
11 VSS
12 XIN
13 VCC1
14 P8_5 NMI CEC
15 P8_4 INT2 ZP
16 P8_3 INT1
17 P8_2 INT0
18 P8_1 TA4IN CTS5/RTS5
19 P8_0 TA4OUT RXD5/SCL5
20 P7_7 TA3IN CLK5
21 P7_6 TA3OUT TXD5/SDA5
22 P7_1 TA0IN/TB5IN RXD2/SCL2/SCLMM
23 P7_0 TA0OUT TXD2/SDA2/SDAMM
24 P6_7 TXD1/SDA1
25 P6_6 RXD1/SCL1
26 P6_5 CLK1
27 P6_4 CTS1/RTS1/CTS0/
CLKS1
28 P6_3 TXD0/SDA0
29 P6_2 RXD0/SCL0
30 P6_1 CLK0
31 P6_0 TRHO CTS0/RTS0
32 CLKOUT P5_7
33 P5_6
34 P5_5
35 P5_4
36 P5_3
37 P5_2
38 P5_1
39 P5_0
40 P4_3
R01DS0033EJ0220 Rev.2.20 Page 17 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Table 1.9 Pin Names for the 80-Pin Package (2/2)
Pin No. Control Pin Port I/O Pin for Peripheral Function
Interrupt Timer Serial interface A/D converter,
D/A converter
41 P4_2
42 P4_1
43 P4_0
44 P3_7
45 P3_6
46 P3_5
47 P3_4
48 P3_3
49 P3_2
50 P3_1
51 P3_0
52 P2_7 AN2_7
53 P2_6 AN2_6
54 P2_5 INT7 AN2_5
55 P2_4 INT6 AN2_4
56 P2_3 AN2_3
57 P2_2 AN2_2
58 P2_1 AN2_1
59 P2_0 AN2_0
60 P0_7 AN0_7
61 P0_6 AN0_6
62 P0_5 AN0_5
63 P0_4 AN0_4
64 P0_3 AN0_3
65 P0_2 AN0_2
66 P0_1 AN0_1
67 P0_0 AN0_0
68 P10_7 KI3 AN7
69 P10_6 KI2 AN6
70 P10_5 KI1 AN5
71 P10_4 KI0 AN4
72 P10_3 KI7 AN3
73 P10_2 KI6 AN2
74 P10_1 KI5 AN1
75 AVSS
76 P10_0 KI4 AN0
77 VREF
78 AVCC
79 P9_7 SIN4 ADTRG
80 P9_6 SOUT4 ANEX1
R01DS0033EJ0220 Rev.2.20 Page 18 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
1.6 Pin Functions
Power supply: VCC2 is used to supply power to the external bus associated pins. The dual power supply configuration
allows VCC2 to interface at a different voltage than VCC1.
Table 1.10 Pin Functions for the 100-Pin Package (1/3)
Signal Name Pin Name I/O Power Supply Description
Power supply
input VCC1,
VCC2, VSS I-
Apply 1.8 to 5.5 V to pins VCC1 and VCC2 (VCC1 ≥ VCC2)
and 0 V to the VSS pin.
Analog powe r
supply input AVCC, AVSS I VCC1 This is the power supply for the A/D and D/A converters.
Connect the AVCC pin to VCC1, and connect the AVSS pin
to VSS.
Reset input RESET I VCC1 Driving this pin low resets the MCU.
CNVSS CNVSS I VCC1
Input pin to switch processor modes. After a reset, to start
operating in single-chip mode, connect the CNVSS pin to
VSS via a resistor. To start operating in microprocessor
mode, connect the pin to VCC1.
External data bus
width select input BYTE I VCC1
Input pin to select the data bus of the external area. The data
bus is 16 bits when it is low, and 8 bits when it is high. This
pin must be fixed either high or low . Connect the BYTE pin to
VSS in single-chip mode.
Bus control pins
D0 to D7 I/O VCC2 Inputs or outputs data (D0 to D7) while accessing an
external area with a separate bus.
D8 to D15 I/O VCC2 Inp uts or outputs data (D8 to D15) while accessing an
external area with a 16-bit separate bus.
A0 to A19 O VCC2 Outputs address bits A0 to A19.
A0/D0 to
A7/D7 I/O VCC2 Inp uts or outputs data (D0 to D7) and outputs address bits
(A0 to A7) by timesharing, while accessing an external area
with an 8-bit mult iplexed bus.
A1/D0 to
A8/D7 I/O VCC2 Inp uts or outputs data (D0 to D7) and outputs address bits
(A1 to A8) by timesharing, while accessing an external area
with a 16-bit multiplexed bus.
CS0 to CS3 O VCC2 Outputs chip-select signals CS0 to CS3 to specify an
external area.
WRL/WR
WRH/BHE
RD O VCC2
Outputs WRL, WRH, (WR, BHE), and RD signals. WRL and
WRH can be switched with BHE and WR.
•WRL, WRH, and RD selected
If the external data bus is 16 bits, data is written to an even
address in an external area when WRL is driven low. Data
is written to an odd address when WRH is driven low . Data
is read when RD is driven low.
•WR, BHE, and RD selected
Data is writ ten to an exter nal area when WR is d ri ven low.
Data in an external area is read when RD is driven low . An
odd address is accessed when BHE is driven low. Select
WR, BHE, and RD when using an 8-b it external data bus.
ALE O VCC2 Outputs an ALE signal to latch the address.
HOLD I VCC2 HOLD input is unavailable. Connect the HOLD pin to VCC2
via a resistor (pul l -u p) .
HLDA O VCC2 In a hold state, HLDA outpu ts a low-level signal.
RDY I VCC2 The MCU bus is placed in a wait state while the RDY pin is
driven low.
R01DS0033EJ0220 Rev.2.20 Page 19 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Notes:
1. Contact the manufacturer of crystal/ceramic resonator regarding the oscillation characterist ics.
2. TXD2, SDA2, and SCL2 are N-channel open drain output pins. TXDi, SDAi, and SCLi can be selected as CMOS
output pins or N-channel open drain output pi ns (i = 0, 1, 5 to 7).
Table 1.11 Pin Functions for the 100-Pin Pack age (2/3)
Signal Name Pin Name I/O Power Supply Description
Main clock input XIN I VCC1 I/O for the main clock oscillato r. Connect a ceramic
resonator or crystal between pins XIN and XOUT. (1)
Input an external clock to XIN pin and leave XOUT pin
open.
Main clock output XOUT O VCC1
Sub clock input XCIN I VCC1 I/O for a sub clock oscillator. Connect a crystal
between XCIN pin and XCOUT pin. (1) Input an
external clock to XCIN pin and leave XCOUT pin
open.
Sub clock output XCOUT O VCC1
BCLK output BCLK O VCC2 Outputs the BCLK signal.
Clock output CLKOUT O VCC2 Outputs a clock with the same frequency as fC, f1, f8,
or f32.
INT interrupt input INT0 to INT2 I VCC1 Input for the INT interrupt.
INT3 to INT7 I VCC2
NMI interrupt input NMI I VCC1 Input for the NMI interrupt.
Key input interrupt
input KI0 to KI7 I VCC1 Input for the key input interrupt.
Timer A
TA0OUT to
TA4OUT I/O VCC1 I/O for timers A0 to A4 (TA0OUT is N-channel ope n
drain output).
TA0IN to TA4IN I VCC1 Input for timers A0 to A4.
ZP I VCC1 Input for Z-phase.
Timer B TB0IN to TB5IN I VCC1 Input for timers B0 to B5.
Three-phase moto r
control timer
U, U, V, V, W, WO VCC1 Output for the three-phase motor control timer.
SD I VCC1 Forced cutoff input.
IDU, IDV, IDW I VCC2 Input for the position data.
Real-time clock output
TRHO O VCC1 Output for the real-time clock.
PWM output PWM0, PWM1 O VCC1, VCC2 PWM output.
Remote control signal
receiver input PMC0, PMC1 I VCC1 Input for the remote control signal receiver.
Serial interface
UART0 to UART2,
UART5 to UART7
CTS0 to CTS2,
CTS5 I VCC1 Input pins to control data transmission.
CTS6, CTS7 I VCC2
RTS0 to RTS2,
RTS5 O VCC1 Output pins to control data reception.
RTS6, RTS7 O VCC2
CLK0 to CLK2,
CLK5 I/O VCC1 Transmit/receive clock I/O.
CLK6, CLK7 I/O VCC2
RXD0 to RXD2,
RXD5 I VCC1 Serial data input.
RXD6, RXD7 I VCC2
TXD0 to TXD2,
TXD5 O VCC1 Serial data output. (2)
TXD6, TXD7 O VCC2
CLKS1 O VCC1 Output for the transmit/receive clock multiple-pin
output function.
R01DS0033EJ0220 Rev.2.20 Page 20 of 115
Nov 01, 2012
M16C/63 Group 1. Overview
Table 1.12 Pin Functions for the 100-Pin Package (3/3)
Signal Name Pin Name I/O Power
Supply Description
UART0 to
UART2,
UART5 to
UART7
I2C mode
SDA0 to SDA2,
SDA5 I/O VCC1 Serial data I/O.
SDA6, SDA7 I/O VCC2
SCL0 to SCL2,
SCL5 I/O VCC1 Transmit/receive clock I/O.
SCL6, SCL7 I/O VCC2
Serial
interface
SI/O3, SI/O4
CLK3, CLK4 I/O VCC1 Transmit/receive clock I/O.
SIN3, SIN4 I VCC1 Serial data input.
SOUT3, SOUT4 O VCC1 Serial data output.
Multi-master
I2C-bus
interface
SDAMM I/O VCC1 Serial data I/O (N-channel open drain output).
SCLMM I/O VCC1 Transmit/receive clock I/O (N -channel open drain output).
CEC I/O CEC I/O VCC1 CEC I/O (N-channel open drain output).
Reference
voltage input VREF I V CC1 Reference voltage input for the A/D and D/A converters.
A/D
converter
AN0 to AN7 I VCC1 Analog input.
AN0_0 to AN0_7
AN2_0 to AN2_7 I VCC2
ADTRG I VCC1 External trigger input.
ANEX0, ANEX1 I VCC1 Extended analog input.
D/A
converter DA0, DA1 O VCC1 Output for the D/A converter.
I/O ports
P0_0 to P0_7
P1_0 to P1_7
P2_0 to P2_7
P3_0 to P3_7
P4_0 to P4_7
P5_0 to P5_7
I/O VCC2
8-bit CMOS I/O ports. A direction register determines whether
each pin is used as an input port or an out put port. A pull-up
resistor may be enabled or disabled for input ports in 4-bit
units.
P6_0 to P6_7
P7_0 to P7_7
P8_0 to P8_7
P9_0 to P9_7
P10_0 to P10_7
I/O VCC1
8-bit I/O ports having equivalent functions to P0. However,
P7_0, P7_1, and P8_5 are N-channel open drain output ports.
No pull-up resistor is provided. P8_5 is an input port for
verifying the NMI pin level and shares a pin with NMI.
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Nov 01, 2012
M16C/63 Group 1. Overview
Note:
1. Contact the manufacturer of crystal/ceramic resonator regarding oscillation characteristics.
Table 1.13 Pin Functions for the 80-Pin Package (1/2)
Signal Name Pin Name I/O Power Supply Description
Power supply
input VCC1,
VSS I - Apply 1.8 to 5.5 V to the VCC1 pin and 0 V to the VSS pin.
Analog powe r
supply input AVCC,
AVSS I VCC1 This is the power supply for the A/ D and D/ A conv erters.
Connect the AVCC pin to VCC1, and connect the AVSS pin
to VSS.
Reset input RESET I VCC1 Driving this pin low resets the MCU.
CNVSS CNVSS I VCC1 Input pin to switch processor modes. After a reset, to start
operating in single-chip mode, connect the CNVSS pin to
VSS via a resistor.
Main clock input XIN I VCC1 I/O pin s for th e main clock oscillator. Connect a ceramic
resonator or crystal between pins XIN and XOUT. (1) Input
an external clock to XIN pin and leave XOUT pin open.
Main clock output XOUT O VCC1
Sub clock input XCIN I VCC1 I/O pins for a sub clock oscillator . Connect a crystal between
XCIN pin and XCOUT pin. (1) Input an extern al clock to XCIN
pin and leave XCOUT pin open.
Sub clock output XCOUT O VCC1
Clock output CLKOUT O VCC1 Outputs a clock with the same frequency as fC, f1, f8, or f32.
INT interrupt input INT0 to INT2 I VCC1 Input for the INT interrupt.
INT6, INT7 I VCC1
NMI interrupt
input NMI I VCC1 Input for the NMI interrupt.
Key input
interrupt input KI0 to KI7 I VCC1 Input for the key input interrupt .
Timer A
TA0OUT,
TA3OUT,
TA4OUT I/O VCC1 I/O for timers A0, A3, and A4 (TA0OUT is N-channel open
drain output).
TA0IN,
TA3IN,
TA4IN I VCC1 Input for timers A0, A3, and A4.
ZP I VCC1 Input for Z-phase.
Timer B TB0IN,
TB2IN to
TB5IN I VCC1 Input for timers B0, and B2 to B5.
Real-time clock
output TRHO O VCC1 Output for the real-time clock.
PWM output PWM0,
PWM1 O VCC1 PWM output.
Remote control
signal receiver
input PMC0 I VCC1 Input for the remote control signal receiver.
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Nov 01, 2012
M16C/63 Group 1. Overview
Note:
1. TXD2, SDA2, and SCL2 are N-channel open drain output pins. TXDi (i = 0, 1, 5), SDAi, and SCLi can be
selected as CMOS output pins or N-channel open drain output pins.
Table 1.14 Pin Functions for the 80-Pin Package (2/2)
Signal Name Pin Name I/O Power
Supply Description
Serial interface
UART0 to UART2,
UART5
CTS0, CTS1,
CTS5 I VCC1 Input pins to control data transmission
RTS0, RTS1,
RTS5 O VCC1 Output pins to control data reception
CLK0, CLK1,
CLK5 I/O VCC1 Transmit /rec e ive clock I/O.
RXD0 to RXD2,
RXD5 I VCC1 Serial data input.
TXD0 to TXD2,
TXD5 O VCC1 Serial data output. (1)
CLKS1 O VCC1 Output for the tra nsmit/receive clock multiple-pin out put
function.
UART0 to UART2,
UART5
I2C mode
SDA0 to SDA2,
SDA5 I/O VCC1 Serial data I/O.
SCL0 to SCL2,
SCL5 I/O VCC1 Transmit /rec e ive clock I/O.
Serial interface
SI/O3, SI/O4
CLK3, CLK4 I/O VCC1 Transmit/receive clock I/O.
SIN4 I V CC1 Serial data input.
SOUT3, SOUT4 O VCC1 Serial data output.
Multi-master I2C-bus
interface SDAMM I /O VCC1 Serial data I/O (N-channel open drain output).
SCLMM I/ O VCC1 Transmit/receive clock I/O (N-channel open drain output).
CEC I/O CEC I/O VCC1 CEC I/O (N-channel open drain output).
Reference voltage
input VREF I VCC1 Reference voltage input for the A/ D and D/A converters.
A/D converter
AN0 to AN7 I VCC1 Analog input.
AN0_0 to AN0_7
AN2_0 to AN2_7 I VCC1
ADTRG I VCC1 External trigger input.
ANEX0, ANEX1 I VCC1 Extended analog input.
D/A converter DA0, DA1 O VCC1 Output for the D/A converter.
I/O ports
P0_0 to P0_7
P2_0 to P2_7
P3_0 to P3_7
P5_0 to P5_7
P6_0 to P6_7
P8_0 to P8_7
P10_0 to P10_7
I/O VCC1
8-bit CMOS I/O ports. A direction register determines
whether each pin is used as an input port or an output
port. A pull-up resistor may be ena bled or disabled for
input ports in 4-bit units. P8_5 is N-channel open drain
output port. No pull-up resistor is provided. P8_5 is an
input port for verifying the NMI pin level and shares a pin
with NMI.
P4_0 to P4_3
P7_0, P7_1
P7_6, P7_7
P9_0,
P9_2 to P9_7
I/O VCC1 I/O ports having equivalent functions to P0. However,
P7_0 and P7_1 are N-channel open drain output ports.
No pull-up resistor is provided.
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Nov 01, 2012
M16C/63 Group 2. Central Processing Unit (CPU)
2. Central Processing Unit (CPU)
Figure 2.1 shows the CPU registers. Seve n register s (R0, R1 , R2, R3, A0, A1, and F B) out of 13 compose a
register ban k, and there are two reg ister banks.
Figure 2.1 CPU Registers
R0H (upper bits of R0)
b15 b8b7 b0
R3
INTBH
USP
ISP
SB
Note: 1. These registers compose a register bank. There are two register banks.
CDZSBOIU
IPL
R2
b31
R3
R2
A1
A0
FB
b19
INTBL
b15 b0
PC
INTBH is the 4 upper bits of the INTB register and INTBL
is the 16 lower bits.
b19 b0
b15 b0
FLG
b15 b0
b15 b0
b7b8
Data registers (1)
Address registers (1)
Frame base registers (1)
Program counter
Interrupt table register
User stack pointer
Interrupt stack pointer
Static base register
Flag register
Reserved area
Carry flag
Debug flag
Zero flag
Sign flag
Register bank select flag
Overflow flag
Interrupt enable flag
Stack pointer select flag
Reserved area
Processor interrupt priority level
R1H (upper bits of R1)
R0L (lower bits of R0)
R1L (lower bits of R1)
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Nov 01, 2012
M16C/63 Group 2. Central Processing Unit (CPU)
2.1 Data Registers (R0, R1, R2, and R3)
R0, R1, R2, and R3 are 16-bit registers used for transfer, arithmetic, and logic opera tions. R0 and R1 can
be split into upper (R0H/ R 1H ) an d lower (R0L/R1L) bits to be used separately as 8- bit data registers.
R0 can be combined with R2, and R3 can b e combined with R1 and be used as 32-bit data registers
R2R0 and R3R1, respectively.
2.2 Address Registers (A0 and A1)
A0 and A1 are 16-bit registers used for indirect addressing, relative addressing, transfer, arithmetic, and
logic operations. A0 can be combined with A1 and used as a 32-bit address register (A1A0).
2.3 Frame Base Register (FB)
FB is a 16-bit register that is used for FB relative addressing.
2.4 Interrupt Table Register (INTB)
INTB is a 20-bit register that indicates the start address of a relocatable interrupt vector table.
2.5 Program Counter (PC)
The PC is 20 bits wide and in dicates the address of the next instruction to be executed.
2.6 User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)
The USP and ISP stack pointe rs (SP) are each comprised of 16 bit s. The U flag is used to switch between
USP and ISP.
2.7 Static Base Register (SB)
SB is a 16-bit register used for SB relative addressing.
2.8 Flag Register (FLG)
FLG is an 11-bit register that indicates the CPU state.
2.8.1 Carry Flag (C Flag)
The C flag retains a carry, borrow, or shift-out bit generated by the arithme tic/logic un it.
2.8.2 Debug Flag (D Flag)
The D flag is for debugging only. Set it to 0.
2.8.3 Zero Flag (Z Flag)
The Z flag becomes 1 when an ar ithmetic operation re sults in 0. Otherwise, it becomes 0.
2.8.4 Sign Flag (S Flag)
The S flag becomes 1 when an arithmetic operation results in a negative value. Otherwise, it becomes
0.
2.8.5 Register Bank Select Flag (B Flag)
Register bank 0 is selected when the B flag is 0. Register bank 1 is selected when this flag is 1.
2.8.6 Overflow Flag (O Flag)
The O flag becomes 1 when an arithmetic operation results in an overflow. Otherwise, it becomes 0.
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Nov 01, 2012
M16C/63 Group 2. Central Processing Unit (CPU)
2.8.7 Interrupt Enable Flag (I Flag)
The I flag enables maskable interrup ts.
Maskable interrup ts are disabled when the I flag is 0, a nd enabled when it is 1. The I flag becomes 0
when an interrupt request is accepted.
2.8.8 Stack Pointer Select Flag (U Flag)
ISP is selected when the U flag is 0. USP is selected when the U flag is 1.
The U flag becomes 0 when a har dware interrupt re quest is accepted, or the INT instruction of software
interrupt number 0 to 31 is executed.
2.8.9 Processor Interrupt Priority Level (IPL)
IPL is 3 bits wide and assign s processor interrupt priority levels from 0 to 7.
If a requested interrupt ha s higher priority than IPL, the inter rupt request is enabled.
2.8.10 Reserved Areas
Only set these bits to 0. The read value is undefined.
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Nov 01, 2012
M16C/63 Group 3. Address Space
3. Address Space
3.1 Address Space
The M16C/63 Group ha s a 1 MB add ress sp ace from 00000h to FFFFFh. Add ress space is exp andable to 4
MB with the memory area exp ansion function. Add resses 40000h to BF FFFh can be used as external a reas
from bank 0 to ba nk 7. Figure 3.1 shows the Addre ss Space. Areas that can be accessed vary depending
on processor mode and the status of each control bit.
Figure 3.1 Address Space
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
In 4 MB mode
Internal RAM
Reserved area
00000h
0D000h
SFR
00400h
SFR
0D800h
Internal ROM
(data flash)
0E000h
Internal ROM
(program ROM 2)
10000h
Reserved area
Internal ROM
(program ROM 1)
14000h
FFFFFh
Reserved area
28000h
27000h
External area
External area
External area
40000h
BFFFFh
Bank 0
04000h External area
The internal RAM is allocated
from address 00400h higher.
Program ROM 1 is allocated from
address FFFFFh lower.
When data flash is enabled
When program ROM 2
is enabled
Memory expansion mode
1 MB
address space
512 KB × 8
Notes:
1. Do not access reserved areas.
2. The figure above applies under the following condition:
- The PM13 bit in the PM1 register is 0
(addresses 04000h to 0CFFFh and 80000h to CFFFFh are used as external areas)
D0000h
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Nov 01, 2012
M16C/63 Group 3. Address Space
3.2 Memory Map
Special function registers (SFRs) are allocated from address 00000h to 003FFh and from 0D000h to
0D7FFh. Peripheral function control registers are located here. All blank areas within SFRs are reserved.
Do not access these areas.
Internal RAM is allocated from address 00400h and hi gher, with 10 KB of internal RAM allocated from
00400h to 02BFFh. Internal RAM is used not only for data storage, but also for the stack area when
subroutines are called or when an interrupt request is accepted.
The internal ROM is flash memory. Three internal ROM areas are available: data flash, program ROM 1,
and program ROM 2.
The data flash is allocated from 0E0 00h to 0 FFFFh. This dat a flash area is mostly used for dat a storag e, but
can also store programs.
Program ROM 2 is allocated from 10000h to 13FFFh. Program RO M 1 is allocated from FFFFFh and lo wer,
with the 64 KB program ROM 1 area alloc ated from address F0000h to FFFFFh.
The special page vectors are allocated from FFE00h to FFFD7h. They are used for the JMPS and JSRS
instructions. Refer to the M16C/60, M16C/20, M16C/Tiny Series Software Manual for details.
The fixed vector table for interrupts is allocated from FFFDCh to FFFFFh.
The 256 bytes beginning with the start ad dress set in the INTB re gister compose the reloca table vector table
for interrupts.
Figure 3.2 shows the Memory Map.
Figure 3.2 Memory Map
Notes:
1. Do not access reserved areas.
2. The figure above applies under the following conditions:
- Memory expansion mode
- The PM10 bit in the PM1 register is 1
(addresses 0E000h to 0FFFFh are used as data flash)
- The PRG2C0 bit in the PRG2C register is 0 (program ROM 2 enabled)
- The PM13 bit in the PM1 register is 1
(all areas in internal RAM, and the program ROM 1 area from 8000 0h are usable)
3. Do not change the data from FFh.
Interna l R A M
Reserved area (1)
00000h
XXXXXh
0D000h
SFR
00400h
SFR
0D800h
Interna l R OM
(data flash)
0E000h
Interna l R OM
(program ROM 2)
10000h
Reserved area (1)
Interna l R OM
(program ROM 1)
14000h
80000h
YYYYYh
FFFFFh
Reserved area (1)
28000h
27000h
External area
External area
External area
Size Address XXXXXh
Internal RAM
12 KB 033FFh
20 KB 053FFh
Special page vector table
FFFFFh
FFFDCh
FFE00h
FFFD8h Reserved area (3)
256 bytes beginning with the
start address set in the INTB
register
Fixed vecto r ta b le
Address for ID code stored
OFS1 address
Size Address YYYYYh
Program ROM 1
128 KB E0000h
256 KB C0000h
Relocatable ve ctor table
On-chip debugger
monitor area
13FFFh
13FF0h
13000h
User boot code area
31 KB 07FFFh
384 KB
512 KB A0000h
80000h
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Nov 01, 2012
M16C/63 Group 3. Address Space
3.3 Accessible Area in Each Mode
Areas that can be acce ssed vary depending on pr ocessor mode and the st atus of each control bit. Figu re
3.3 shows the Accessible Area in Each Mode.
In single-chip mode, the SFRs, internal RAM, and internal ROM can be accessed.
In memory expan sion mode, the SFRs, internal RAM, intern al ROM, and external areas can be accessed.
Address sp ace is expandable to 4 MB with the memory area expansion function.
In microprocessor mod e, the SFRs, interna l RAM, and external ar eas can be accesse d. Address space is
expandable to 4 MB with the memory area expansion function. Allocate ROM to the fixed vector table
from FFFDCh to FFFFFh.
Figure 3.3 Accessible Area in Each Mode
Notes:
1. Do not access reserved areas.
2. The figure above applies under the following conditions:
Single-chip mode and memory expansion mode
- The PM10 bit in the PM1 register is 1
(addresses 0E000h to 0FFFFh are used as data flash)
- The PRG2C0 bit in the PRG2C register is 0 (program ROM 2 enabled)
- The PM13 bit in the PM1 register is 1
(all areas in internal RAM, and the program ROM 1 area from 80000h are usable)
Microprocessor mode
- The PM10 bit is 0 (addresses 0E000h to 0FFFFh are used as the CS2 area)
- The PRG2C0 bit is 1 (program ROM 2 disabled)
00000h
0D000h
00400h
0D800h
0E000h
10000h
14000h
FFFFFh
28000h
27000h
80000h
00000h
0D000h
00400h
0D800h
0E000h
10000h
14000h
FFFFFh
Single-Chip Mode Memory Expansion Mode 00000h
0D000h
00400h
0D800h
FFFFFh
28000h
27000h
Microprocessor Mode
Internal ROM
(data fl ash)
Internal ROM
(program ROM 2)
Reserved area
Internal ROM
(program ROM 1)
Reserved area
External area
External area
External area
Internal RAM
Reserve d ar ea
SFR
SFR
Reserved area
Exte rna l area
Exte rna l area
Internal RAM
Reserved area
SFR
SFR
Reserved area
Internal RAM
Reserved area
SFR
SFR
Internal ROM
(data fl ash)
Internal ROM
(program ROM 2)
Internal ROM
(program ROM 1)
Reserved area
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Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
4. Special Function Registers (SFRs)
4.1 SFRs
An SFR is a control register for a peripheral function.
Notes:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
2. Software reset, watchdog timer reset, oscillator stop detect reset, voltage monitor 1 reset, and voltage monitor 2 reset
do not aff ect the following bits: bits PM01 and PM00 in the PM0 register.
3. Oscillator stop detect reset does not affect bits CM20, CM21, and CM27.
4. The state of bits in the RSTFR register depends on the reset type.
5. This is the reset value after hardware reset. Refer to the explanation of each register for details.
Table 4.1 SFR Information (1) (1)
Address Register S ym b o l Reset Value
0000h
0001h
0002h
0003h
0004h Processor Mode Register 0 PM0
0000 0000b
(CNVSS pin is low)
0000 0011b
(CNVSS pi n is hi gh )
(2)
0005h Processor Mode Register 1 PM1 0000 1000b
0006h System Clock Control Register 0 CM0 0100 1000b
0007h System Clock Control Register 1 CM1 0010 0000b
0008h Chip Select Control Register CSR 01h
0009h External Area Recovery Cycle Control Registe r EWR XXXX XX00b
000Ah Protect Register PRCR 00h
000Bh Data Bank Register DBR 00h
000Ch Oscillation Stop Detection Register CM2 0X00 0010b
(3)
000Dh
000Eh
000Fh
0010h Program 2 Area Control Register PRG2C XXXX XX00b
0011h External Area Wait Control Expansion Register EWC 00h
0012h Peripheral Clock Select Register PCLKR 0000 0011b
0013h Sub Clock Division Control Register SCM0 XXXX X000b
0014h
0015h Clock Prescaler Reset Flag CPSRF 0XXX XXXXb
0016h Peripheral Clock Stop Register 1 PCLKSTP1 X000 0000b
0017h
0018h Reset Source Determine Register RSTFR XX00 001Xb
(hardware reset)
(4)
0019h Voltage Detector 2 Flag Register VCR1 0000 1000b
(5)
001Ah Voltage Detector Operation Enable Register VCR2 00h (5)
001Bh Chip Select Expansion Control Regist er CSE 00h
001Ch
001Dh
001Eh Processor Mode Register 2 PM2 XX00 0X01b
001Fh X: Undefined
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Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Notes:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
2. This is the reset value after hardware reset. Refer to the explanation of each register for details.
Table 4.2 SFR Information (2) (1)
Address Register Symbol Reset Value
0020h
0021h
0022h 40 MHz On-Chip Oscillator Control Register 0 FRA0 XXXX XX00b
0023h
0024h
0025h
0026h Voltage Monitor Function Select Register VWCE 00h
0027h
0028h Voltage Detector 1 Level Select Register VD1LS 0000 1010b
(2)
0029h
002Ah Voltage Monitor 0 Control Register VW0C 1000 XX10b
(2)
002Bh Voltage Monitor 1 Control Register VW1C 1000 1010b
(2)
002Ch Voltage Monitor 2 Control Register VW2C 1000 0X10b
(2)
002Dh
002Eh
002Fh
0030h
0031h
0032h
0033h
0034h
0035h
0036h
0037h
0038h
0039h
003Ah
003Bh
003Ch
003Dh
003Eh
003Fh X: Undefined
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Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.3 SFR Information (3) (1)
Address Register Symbol Reset Value
0040h
0041h
0042h INT7 Interrupt Control Register INT7IC XX00 X000b
0043h INT6 Interrupt Control Register INT6IC XX00 X000b
0044h INT3 Interrupt Control Register INT3IC XX00 X000b
0045h Timer B5 Interrupt Control Register TB5IC XXXX X0 00b
0046h Timer B4 Interrup t Control Register
UART1 Bus Collis ion Detection Interrupt Control Register TB4IC
U1BCNIC XXXX X000b
0047h Timer B3 Interrup t Control Register
UART0 Bus Collis ion Detection Interrupt Control Register TB3IC
U0BCNIC XXXX X000b
0048h SI/O4 Interrupt Control Register
INT5 Interrupt Control Register S4IC
INT5IC XX00 X000b
0049h SI/O3 Interrupt Control Register
INT4 Interrupt Control Register S3IC
INT4IC XX00 X000b
004Ah UART2 Bus Collisio n Detection Interrupt Cont rol Register BCNIC XXXX X000b
004Bh DMA0 Interrupt Control Register DM0IC XXXX X000b
004Ch DMA1 Interrupt Control Register DM1IC XXXX X000b
004Dh Key Input Interrupt Control Register KUPIC XX00 X000b
004Eh A/D Conversion Interrupt Control Register ADIC XXXX X000b
004Fh UART2 Transmit Interrupt Control Register S2TIC XXXX X000b
0050h UART2 Receive Interrupt Control Register S2RIC XXXX X000b
0051h UART0 Transmit Interrupt Control Register S0TIC XXXX X000b
0052h UART0 Receive Interrupt Control Register S0RIC XXXX X000b
0053h UART1 Transmit Interrupt Control Register S1TIC XXXX X000b
0054h UART1 Receive Interrupt Control Register S1RIC XXXX X000b
0055h Timer A0 Interrupt Control Register TA0IC XXXX X000b
0056h Timer A1 Interrupt Control Register TA1IC XXXX X000b
0057h Timer A2 Interrupt Control Register TA2IC XXXX X000b
0058h Timer A3 Interrupt Control Register TA3IC XXXX X000b
0059h Timer A4 Interrupt Control Register TA4IC XXXX X000b
005Ah Timer B0 Interrupt Control Register TB0IC XXXX X000b
005Bh Timer B1 Interrupt Control Register TB1IC XXXX X000b
005Ch Timer B2 Interrupt Control Register TB2IC XXXX X000b
005Dh INT0 Interrupt Control Register INT0IC XX00 X000b
005Eh INT1 Interrupt Control Register INT1IC XX00 X000b
005Fh INT2 Interrupt Control Register INT2IC XX00 X000b
X: Undefined
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Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.4 SFR Information (4) (1)
Address Register Symbol Reset Value
0060h
0061h
0062h
0063h
0064h
0065h
0066h
0067h
0068h
0069h DMA2 Interrupt Control Register DM2IC XXXX X000b
006Ah DMA3 Interrupt Control Register DM3IC XXXX X000b
006Bh UART 5 Bus Collision Detection Interrupt Control Register
CEC1 Interrupt Control Register U5BCNIC
CEC1IC XXXX X000b
006Ch UART5 Transmit Interrupt Control Register
CEC2 Interrupt Control Register S5TIC
CEC2IC XXXX X000b
006Dh UART5 Receive Interrupt Control Register S5RIC XXXX X000b
006Eh UART 6 Bus Collision Detection Interrupt Control Register
Real-Time Clock Periodic Interrupt Control Register
U6BCNIC
RTCTIC XXXX X000b
006Fh UART6 Transmit Interrupt Control Register
Real-Time Clock Alarm Interrupt Control Register S6TIC
RTCCIC XXXX X000b
0070h UART6 Receive Interrupt Control Register S6RIC XXXX X000b
0071h UART7 Bus Collision Detection Interrupt Control Register
Remote Control Signal Receiver 0 Interrupt Control Register U7BCNIC
PMC0IC XXXX X000b
0072h UART7 Transmit Interrupt Control Register
Remote Control Signal Receiver 1 Interrupt Control Register S7TIC
PMC1IC XXXX X000b
0073h UART7 Receive Interrupt Control Register S7RIC XXXX X000b
0074h
0075h
0076h
0077h
0078h
0079h
007Ah
007Bh I2C-bus Interface Interrupt Control Regi ster IICIC XXXX X000b
007Ch SCL/SDA Interrupt Control Register SCLDAIC XXXX X000b
007Dh
007Eh
007Fh
0080h to
017Fh X: Undefined
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M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.5 SFR Information (5) (1)
Address Register Symbol Reset Value
0180h DMA0 Source Pointer SAR0 XXh
0181h XXh
0182h 0Xh
0183h
0184h DMA0 Destination Pointer DAR0 XXh
0185h XXh
0186h 0Xh
0187h
0188h DMA0 Transfer Counter TCR0 XXh
0189h XXh
018Ah
018Bh
018Ch DMA0 Control Register DM0CON 0000 0X00b
018Dh
018Eh
018Fh
0190h DMA1 Source Pointer SAR1 XXh
0191h XXh
0192h 0Xh
0193h
0194h DMA1 Destination Pointer DAR1 XXh
0195h XXh
0196h 0Xh
0197h
0198h DMA1 Transfer Counter TCR1 XXh
0199h XXh
019Ah
019Bh
019Ch DMA1 Control Register DM1CON 0000 0X00b
019Dh
019Eh
019Fh
01A0h DMA2 Source Pointer SAR2 XXh
01A1h XXh
01A2h 0Xh
01A3h
01A4h DMA2 Destination Pointer DAR2 XXh
01A5h XXh
01A6h 0Xh
01A7h
01A8h DMA2 Transfer Counter TCR2 XXh
01A9h XXh
01AAh
01ABh
01ACh DMA2 Control Register DM2CON 0000 0X00b
01ADh
01AEh
01AFh X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 34 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.6 SFR Information (6) (1)
Address Register Symbol Reset Value
01B0h DMA3 Source Pointer SAR3 XXh
01B1h XXh
01B2h 0Xh
01B3h
01B4h DMA3 Destination Pointer DAR3 XXh
01B5h XXh
01B6h 0Xh
01B7h
01B8h DMA3 Transfe r Counter TCR3 XXh
01B9h XXh
01BAh
01BBh
01BCh DMA3 Control Register DM3CON 0000 0X00b
01BDh
01BEh
01BFh
01C0h Timer B0-1 Register TB01 XXh
01C1h XXh
01C2h Timer B1-1 Register TB11 XXh
01C3h XXh
01C4h Timer B2-1 Register TB21 XXh
01C5h XXh
01C6h Pulse Period/Pulse Width Measurement Mode Function Select
Register 1 PPWFS1 XXXX X000b
01C7h
01C8h Timer B Count Source Select Register 0 TBCS0 00h
01C9h Timer B Count Source Select Register 1 TBCS1 X0h
01CAh
01CBh Timer AB Division Control Register 0 TCKDIVC0 0000 X000b
01CCh
01CDh
01CEh
01CFh
01D0h Timer A Count Source Select Register 0 TACS0 00h
01D1h Timer A Count Source Select Register 1 TACS1 00h
01D2h Timer A Count Source Select Register 2 TACS2 X0h
01D3h
01D4h 16-bit Pulse Width Modulation Mode Function Select Register PWMFS 0XX0 X00Xb
01D5h Timer A Waveform Output Function Select Register TAPOFS XXX0 0000b
01D6h
01D7h
01D8h Timer A Output Waveform Change Enable Register TAOW XXX0 X00Xb
01D9h
01DAh Three-Phase Protect Control Register TPRC 00h
01DBh
01DCh
01DDh
01DEh
01DFh X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 35 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.7 SFR Information (7) (1)
Address Register Symbol Reset Value
01E0h Timer B3-1 Register TB31 XXh
01E1h XXh
01E2h Timer B4-1 Register TB41 XXh
01E3h XXh
01E4h Timer B5-1 Register TB51 XXh
01E5h XXh
01E6h Pulse Period/Pulse Wid th Measureme nt Mode Func tion Select Reg-
ister 2 PPWFS2 XXXX X000b
01E7h
01E8h Timer B Count Source Select Register 2 TBCS2 00h
01E9h Timer B Count Source Select Register 3 TBCS3 X0h
01EAh
01EBh
01ECh
01EDh
01EEh
01EFh
01F0h PMC0 Function Select Register 0 PMC0CON0 00h
01F1h PMC0 Function Select Register 1 PMC0CON1 00XX 0000b
01F2h PMC0 Function Select Register 2 PMC0CON2 0000 00X0b
01F3h PMC0 Function Select Register 3 PMC0CON3 00h
01F4h PMC0 Status Register PMC0STS 00h
01F5h PMC0 Interrupt Source Select Register PMC0INT 00h
01F6h PMC0 Compare Control Register PMC0CPC XXX0 X000b
01F7h PMC0 Compare Data Register PMC0CPD 00h
01F8h PMC1 Function Select Register 0 PMC1CON0 XXX0 X000b
01F9h PMC1 Function Select Register 1 PMC1CON1 XXXX 0X00b
01FAh PMC1 Function Select Register 2 PMC1CON2 0000 00X0b
01FBh PMC1 Function Select Register 3 PMC1CON3 00h
01FCh PMC1 Status Register PMC1STS X000 X00Xb
01FDh PMC1 Interrupt Source Select Register PMC1INT X000 X00Xb
01FEh
01FFh
0200h
0201h
0202h
0203h
0204h
0205h Interrupt Source Select Register 3 IFSR3A 00h
0206h Interrupt Source Select Register 2 IFSR2A 00h
0207h Interrupt Source Select Register IFSR 00h
0208h
0209h
020Ah
020Bh
020Ch
020Dh
020Eh Address Match Interrupt Enable Register AIER XXXX XX00b
020Fh Address Match Interrupt Enable Register 2 AIER2 XXXX XX00b
X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 36 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.8 SFR Information (8) (1)
Address Register Symbol Reset Value
0210h Address Match Interrupt Register 0 RMAD0 00h
0211h 00h
0212h X0h
0213h
0214h Address Match Interrupt Register 1 RMAD1 00h
0215h 00h
0216h X0h
0217h
0218h Address Match Interrupt Register 2 RMAD2 00h
0219h 00h
021Ah X0h
021Bh
021Ch Address Match Interrupt Register 3 RMAD3 00h
021Dh 00h
021Eh X0h
021Fh
0220h Flash Memory Control Register 0 FMR0
0000 0001b
(Other than user boot mode)
0010 0001b
(User boot mode)
0221h Flash Memory Control Register 1 FMR1 00X0 XX0Xb
0222h Flash Memory Control Register 2 FMR2 XXXX 0000b
0223h Flash Memory Control Register 3 FMR3 XXXX 0000b
0224h
0225h
0226h
0227h
0228h
0229h
022Ah
022Bh
022Ch
022Dh
022Eh
022Fh
0230h Flash Memory Control Register 6 FMR6 XX0X XX00b
0231h
0232h
0233h
0234h
0235h
0236h
0237h
0238h
0239h
023Ah
023Bh
023Ch
023Dh
023Eh
023Fh X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 37 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.9 SFR Information (9) (1)
Address Register Symbol Reset Value
0240h
0241h
0242h
0243h
0244h UART0 Special Mode Register 4 U0SMR4 00h
0245h UART0 Special Mode Register 3 U0SMR3 000X 0X0Xb
0246h UART0 Special Mode Register 2 U0SMR2 X000 0000b
0247h UART0 Special Mode Register U0SMR X000 0000b
0248h UART0 Transmit/Receive Mode Register U0MR 00h
0249h UART0 Bit Rate Register U0BRG XXh
024Ah UART0 Transmit Buffer Register U0TB XXh
024Bh XXh
024Ch UART0 Transmit/Receive Control Register 0 U0C0 0000 1000b
024Dh UART0 Transmit/Receive Control Register 1 U0C1 00XX 0010b
024Eh UART0 Receive Buffer Register U0RB XXh
024Fh XXh
0250h UART Transmit/Receive Control Register 2 UCON X000 0000b
0251h
0252h UART Clock Select Regist er UCLKSEL0 X0h
0253h
0254h UART1 Special Mode Register 4 U1SMR4 00h
0255h UART1 Special Mode Register 3 U1SMR3 000X 0X0Xb
0256h UART1 Special Mode Register 2 U1SMR2 X000 0000b
0257h UART1 Special Mode Register U1SMR X000 0000b
0258h UART1 Transmit/Receive Mode Register U1MR 00h
0259h UART1 Bit Rate Register U1BRG XXh
025Ah UART1 Transmit Buffer Register U1TB XXh
025Bh XXh
025Ch UART1 Transmit/Receive Control Register 0 U1C0 0000 1000b
025Dh UART1 Transmit/Receive Control Register 1 U1C1 00XX 0010b
025Eh UART1 Receive Buffer Register U1RB XXh
025Fh XXh
0260h
0261h
0262h
0263h
0264h UART2 Special Mode Register 4 U2SMR4 00h
0265h UART2 Special Mode Register 3 U2SMR3 000X 0X0Xb
0266h UART2 Special Mode Register 2 U2SMR2 X000 0000b
0267h UART2 Special Mode Register U2SMR X000 0000b
0268h UART2 Transmit/Receive Mode Register U2MR 00h
0269h UART2 Bit Rate Register U2BRG XXh
026Ah UART2 Transmit Buffer Register U2TB XXh
026Bh XXh
026Ch UART2 Transmit/Receive Control Register 0 U2C0 0000 1000b
026Dh UART2 Transmit/Receive Control Register 1 U2C1 0000 0010b
026Eh UART2 Receive Buffer Register U2RB XXh
026Fh XXh
X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 38 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.10 SFR Information (10) (1)
Address Register Symbol Reset Value
0270h SI/O3 Transmit/Receive Register S3TRR XXh
0271h
0272h SI/O3 Control Register S3C 0100 0000b
0273h SI/O3 Bit Rate Register S3BRG XXh
0274h SI/O4 Transmit/Receive Register S4TRR XXh
0275h
0276h SI/O4 Control Register S4C 0100 0000b
0277h SI/O4 Bit Rate Register S4BRG XXh
0278h SI/O3, 4 Control Register 2 S34C2 00XX X0X0b
0279h
027Ah
027Bh
027Ch
027Dh
027Eh
027Fh
0280h
0281h
0282h
0283h
0284h UART5 Special Mode Register 4 U5SMR4 00h
0285h UART5 Special Mode Register 3 U5SMR3 000X 0X0Xb
0286h UART5 Special Mode Register 2 U5SMR2 X000 0000b
0287h UART5 Special Mode Register U5SMR X000 0000b
0288h UART5 Transmit/Receive Mode Register U5MR 00h
0289h UART5 Bit Rate Register U5BRG XXh
028Ah UART5 Transmit Buffer Register U5TB XXh
028Bh XXh
028Ch UART5 Transmit/Receive Control Register 0 U5C0 0000 1000b
028Dh UART5 Transmit/Receive Control Register 1 U5C1 0000 0010b
028Eh UART5 Receive Buffer Register U5RB XXh
028Fh XXh
0290h
0291h
0292h
0293h
0294h UART6 Special Mode Register 4 U6SMR4 00h
0295h UART6 Special Mode Register 3 U6SMR3 000X 0X0Xb
0296h UART6 Special Mode Register 2 U6SMR2 X000 0000b
0297h UART6 Special Mode Register U6SMR X000 0000b
0298h UART6 Transmit/Receive Mode Register U6MR 00h
0299h UART6 Bit Rate Register U6BRG XXh
029Ah UART6 Transmit Buffer Register U6TB XXh
029Bh XXh
029Ch UART6 Transmit/Receive Control Register 0 U6C0 0000 1000b
029Dh UART6 Transmit/Receive Control Register 1 U6C1 0000 0010b
029Eh UART6 Receive Buffer Register U6RB XXh
029Fh XXh
X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 39 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.11 SFR Information (11) (1)
Address Register Symbol Reset Value
02A0h
02A1h
02A2h
02A3h
02A4h UART7 Special Mode Register 4 U7SMR4 00h
02A5h UART7 Special Mode Register 3 U7SMR3 000X 0X0Xb
02A6h UART7 Special Mode Register 2 U7SMR2 X000 0000b
02A7h UART7 Special Mode Register U7SMR X000 0000b
02A8h UART7 Transmit/Receive Mode Register U7MR 00h
02A9h UART7 Bit Rate Register U7BRG XXh
02AAh UART7 Transmit Buffer Register U7TB XXh
02ABh XXh
02ACh UART7 Transmit/Receive Control Register 0 U7C0 0000 1000b
02ADh UART7 Transmit/Receive Control Register 1 U7C1 0000 0010b
02AEh UART7 Receive Buffer Register U7RB XXh
02AFh XXh
02B0h I2C0 Data Shift Register S00 XXh
02B1h
02B2h I2C0 Address Register 0 S0D0 0000 000Xb
02B3h I2C0 Control Register 0 S1D0 00h
02B4h I2C0 Clock Control Register S20 00h
02B5h I2C0 Start/Stop Condition Control Register S2D0 0001 1010b
02B6h I2C0 Control Register 1 S3D0 0011 0000b
02B7h I2C0 Control Register 2 S4D0 00h
02B8h I2C0 Status Register 0 S10 0001 000Xb
02B9h I2C0 Status Register 1 S11 XXXX X000b
02BAh I2C0 Address Register 1 S0D1 0000 000Xb
02BBh I2C0 Address Register 2 S0D2 0000 000Xb
02BCh
02BDh
02BEh
02BFh
02C0h to
02FFh X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 40 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.12 SFR Information (12) (1)
Address Register Symbol Reset Value
0300h Timer B3/B4/B5 Count Start Flag TBSR 000X XXXXb
0301h
0302h Timer A1-1 Register TA11 XXh
0303h XXh
0304h Timer A2-1 Register TA21 XXh
0305h XXh
0306h Timer A4-1 Register TA41 XXh
0307h XXh
0308h Three-Phase PWM Control Register 0 INVC0 00h
0309h Three-Phase PWM Control Register 1 INVC1 00h
030Ah Three-Phase Output Buffer Register 0 IDB0 XX11 1111b
030Bh Three-Phase Output Buffer Register 1 IDB1 XX11 1111b
030Ch Dead Time Timer DTT XXh
030Dh Timer B2 Interrupt Generation Frequency Set Counter ICTB2 XXh
030Eh Position-Data-Retain Function Control Register PDRF XXXX 0000b
030Fh
0310h Timer B3 Register TB3 XXh
0311h XXh
0312h Timer B4 Register TB4 XXh
0313h XXh
0314h Timer B5 Register TB5 XXh
0315h XXh
0316h
0317h
0318h Port Function Control Register PFCR 0011 1111b
0319h
031Ah
031Bh Timer B3 Mode Register TB3MR 00XX 0000b
031Ch Timer B4 Mode Register TB4MR 00XX 0000b
031Dh Timer B5 Mode Register TB5MR 00XX 0000b
031Eh
031Fh
0320h Count Start Flag TABSR 00h
0321h
0322h One-Shot Start Flag ONSF 00h
0323h Trigger Select Re gister TRGSR 00h
0324h Increment/Decrement Flag UDF 00h
0325h
0326h Timer A0 Register TA0 XXh
0327h XXh
0328h Timer A1 Register TA1 XXh
0329h XXh
032Ah Timer A2 Register TA2 XXh
032Bh XXh
032Ch Timer A3 Register TA3 XXh
032Dh XXh
032Eh Timer A4 Register TA4 XXh
032Fh XXh
X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 41 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.13 SFR Information (13) (1)
Address Register Symbol Reset Value
0330h Timer B0 Register TB0 XXh
0331h XXh
0332h Timer B1 Register TB1 XXh
0333h XXh
0334h Timer B2 Register TB2 XXh
0335h XXh
0336h Timer A0 Mode Register TA0MR 00h
0337h Timer A1 Mode Register TA1MR 00h
0338h Timer A2 Mode Register TA2MR 00h
0339h Timer A3 Mode Register TA3MR 00h
033Ah Timer A4 Mode Register TA4MR 00h
033Bh Timer B0 Mode Register TB0MR 00XX 0000b
033Ch Timer B1 Mode Register TB1MR 00XX 0000b
033Dh Timer B2 Mode Register TB2MR 00XX 0000b
033Eh Timer B2 Special Mode Register TB2SC X000 0000b
033Fh
0340h Second Data Register TRHSEC 0000 0000b
0341h Minute Data Regist er TRHMIN 0000 0000b
0342h Hour Data Register TRHHR 0000 0000b
0343h Day-of-the-Week Data Register TRHWK 0000 0000b
0344h Date Data Register TRHDY 0000 0001b
0345h Month Data Register TRHMON 0000 0001b
0346h Year Data Register TRHYR 0000 0000b
0347h Timer RH Control Register TRHCR 0000 0100b
0348h Timer RH Count Source Select Register TRHCSR 0000 1000b
0349h Clock Error Correction Register TRHADJ 0000 0000b
034Ah Timer RH Interrupt Flag Register TRHIFR XXX0 0000b
034Bh Timer RH Interrupt Enable Register TRHIER 0000 0000b
034Ch Alarm Minute Register TRHAMN 0000 0000b
034Dh Alarm Hour Register TRHAHR 0000 0000b
034Eh Alarm Day-of-the-Week Register TRHAWK 0XXX X000b
034Fh Timer RH Protect Register TRHPRC 00XX XXXXb
0350h CEC Function Control Register 1 CECC1 XXXX X000b
0351h CEC Function Control Register 2 CECC2 00h
0352h CEC Function Control Register 3 CECC3 XXXX 0000b
0353h CEC Function Control Register 4 CECC4 00h
0354h CEC Flag Register CECFLG 00h
0355h CEC Interrupt Source Select Register CISEL 00h
0356h CEC Transmit Buffer Register 1 CCTB1 00h
0357h CEC Tr ansmit Buffer Register 2 CCTB2 XXXX XX00b
0358h CEC Receive Buffer Register 1 CCRB1 00h
0359h CEC Receive Buffer Register 2 CCRB2 XXXX X000b
035Ah CEC Receive Follower Address Set Register 1 CRADRI1 00h
035Bh CEC Receive Follower Address Set Register 2 CRADRI2 00h
035Ch
035Dh
035Eh
035Fh X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 42 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Notes:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
2. Values aft er hardware reset, power-on reset, or voltage monitor 0 reset are as follows:
- 00000000b when a low-level signal is input to the CNVSS pin
- 00000010b when a high-level signal is input to the CNVSS pin
Values after voltage monitor 1 r eset, voltage monitor 2 reset, software res et, watchdog timer reset, or o scillation stop
detect reset are as follows:
- 00000000b when bits PM01 and PM00 in the PM0 register are 00b (single-chip mode).
- 00000010b when bits PM01 and PM00 in the PM0 register are 01b (memory expansion mode) or 11b
(microprocessor mode).
3. When the CSPROINI bit in the OFS1 address is 0, the reset value is 1000 0000b.
Table 4.14 SFR Information (14) (1)
Address Register Symbol Reset Value
0360h Pull-Up Control Register 0 PUR0 00h
0361h Pull-Up Control Register 1 PUR1 0000 0000b
(2)
0000 0010b
0362h Pull-Up Control Register 2 PUR2 00h
0363h
0364h
0365h
0366h Port Control Register PCR 0000 0XX0b
0367h
0368h
0369h NMI/SD Digital Filter Register NMIDF XXXX X000b
036Ah
036Bh
036Ch
036Dh
036Eh
036Fh
0370h PWM Control Register 0 PWMCON0 00h
0371h
0372h PWM0 Prescaler PWMPRE0 00h
0373h PWM0 Register PWMREG0 00h
0374h PWM1 Prescaler PWMPRE1 00h
0375h PWM1 Register PWMREG1 00h
0376h PWM Control Register 1 PWMCON1 00h
0377h
0378h
0379h
037Ah
037Bh
037Ch Count Source Protection Mode Register CSPR 00h
(3)
037Dh Watchdog Timer Refresh Register WDTR XXh
037Eh Watchdog Timer S tart Register WDTS XXh
037Fh Watchdog Timer Control Register WDC 00XX XXXXb
0380h to
038Fh X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 43 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.15 SFR Information (15) (1)
Address Register Symbol Reset Value
0390h DMA2 Source Select Register DM2SL 00h
0391h
0392h DMA3 Source Select Register DM3SL 00h
0393h
0394h
0395h
0396h
0397h
0398h DMA0 Source Select Register DM0SL 00h
0399h
039Ah DMA1 Source Select Register DM1SL 00h
039Bh
039Ch
039Dh
039Eh
039Fh
03A0h
03A1h
03A2h Open-Circuit Detection Assist Function Register AINRST XX00 XXXXb
03A3h
03A4h
03A5h
03A6h
03A7h
03A8h
03A9h
03AAh
03ABh
03ACh
03ADh
03AEh
03AFh
03B0h
03B1h
03B2h
03B3h
03B4h SFR Snoop Address Register CRCSAR XXXX XXXXb
03B5h 00XX XXXXb
03B6h CRC Mode Register CRCMR 0XXX XXX0b
03B7h
03B8h
03B9h
03BAh
03BBh
03BCh CRC Data Register CRCD XXh
03BDh XXh
03BEh CRC Input Register CRCIN XXh
03BFh X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 44 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.16 SFR Information (16) (1)
Address Register Symbol Reset Value
03C0h A/D Register 0 AD0 XXXX XXXXb
03C1h 0000 00XXb
03C2h A/D Register 1 AD1 XXXX XXXXb
03C3h 0000 00XXb
03C4h A/D Register 2 AD2 XXXX XXXXb
03C5h 0000 00XXb
03C6h A/D Register 3 AD3 XXXX XXXXb
03C7h 0000 00XXb
03C8h A/D Register 4 AD4 XXXX XXXXb
03C9h 0000 00XXb
03CAh A/D Register 5 AD5 XXXX XXXXb
03CBh 0000 00XXb
03CCh A/D Register 6 AD6 XXXX XXXXb
03CDh 0000 00XXb
03CEh A/D Register 7 AD7 XXXX XXXXb
03CFh 0000 00XXb
03D0h
03D1h
03D2h
03D3h
03D4h A/D Control Register 2 ADCON2 0000 X00Xb
03D5h
03D6h A/D Control Register 0 ADCON0 0000 0XXXb
03D7h A/D Control Register 1 ADCON1 0000 0000b
03D8h D/A0 Register DA0 00h
03D9h
03DAh D/A1 Register DA1 00h
03DBh
03DCh D/A Control Register DACON 00h
03DDh
03DEh
03DFh
03E0h Port P0 Register P0 XXh
03E1h Port P1 Register P1 XXh
03E2h Port P0 Direction Register PD0 00h
03E3h Port P1 Direction Register PD1 00h
03E4h Port P2 Register P2 XXh
03E5h Port P3 Register P3 XXh
03E6h Port P2 Direction Register PD2 00h
03E7h Port P3 Direction Register PD3 00h
03E8h Port P4 Register P4 XXh
03E9h Port P5 Register P5 XXh
03EAh Port P4 Direction Register PD4 00h
03EBh Port P5 Direction Register PD5 00h
03ECh Port P6 Register P6 XXh
03EDh Port P7 Register P7 XXh
03EEh Port P6 Direction Register PD6 00h
03EFh Port P7 Direction Register PD7 00h
X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 45 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.17 SFR Information (17) (1)
Address Register Symbol Reset Value
03F0h Port P8 Register P8 XXh
03F1h Port P9 Register P9 XXh
03F2h Port P8 Direction Register PD8 00h
03F3h Port P9 Direction Register PD9 00h
03F4h Port P10 Register P10 XXh
03F5h
03F6h Port P10 Direction Register PD10 00h
03F7h
03F8h
03F9h
03FAh
03FBh
03FCh
03FDh
03FEh
03FFh X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 46 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Note:
1. The bla nk ar ea s are r ese rv e d. No ac c e s s is al lo wed.
Table 4.18 SFR Information (18) (1)
Address Register Symbol Reset Value
D080h PMC0 Header Pattern Set Register (Min) PMC0HDPMIN 0000 0000b
D081h XXXX X000b
D082h PMC0 Header Pattern Set Register (Max) PMC0HDPMAX 0000 0000b
D083h XXXX X000b
D084h PMC0 Data 0 Pattern Set Register (Min) PMC0D0PMIN 00h
D085h PMC0 Data 0 Pattern Set Register (Max) PMC0D0PMAX 00h
D086h PMC0 Data 1 Pattern Set Register (Min) PMC0D1PMIN 00h
D087h PMC0 Data 1 Pattern Set Register (Max) PMC0D1PMAX 00h
D088h PMC0 Measurements Register PMC0TIM 00h
D089h 00h
D08Ah
D08Bh
D08Ch PMC0 Receive Data Store Register 0 PMC0DAT0 00h
D08Dh PMC0 Receive Data Store Register 1 PMC0DAT1 00h
D08Eh PMC0 Receive Data Store Register 2 PMC0DAT2 00h
D08Fh PMC0 Receive Data Store Register 3 PMC0DAT3 00h
D090h PMC0 Receive Data Store Register 4 PMC0DAT4 00h
D091h PMC0 Receive Data Store Register 5 PMC0DAT5 00h
D092h PMC0 Receive Bit Count Register PMC0RBIT XX00 0000b
D093h
D094h PMC1 Header Pattern Set Register (Min) PMC1HDPMIN 0000 0000b
D095h XXXX X000b
D096h PMC1 Header Pattern Set Register (Max) PMC1HDPMAX 0000 0000b
D097h XXXX X000b
D098h PMC1 Data 0 Pattern Set Register (Min) PMC1D0PMIN 00h
D099h PMC1 Data 0 Pattern Set Register (Max) PMC1D0PMAX 00h
D09Ah PMC1 Data 1 Pattern Set Register (Min) PMC1D1PMIN 00h
D09Bh PMC1 Data 1 Pattern Set Register (Max) PMC1D1PMAX 00h
D09Ch PMC1 Measurements Register PMC1TIM 00h
D09Dh 00h
D09Eh
D09Fh X: Undefined
R01DS0033EJ0220 Rev.2.20 Page 47 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
4.2 No tes on SFRs
4.2.1 Register Settings
Table 4.19 lists Registers with Wr ite-Only Bit s and registe rs whose function dif fers b etween reading and
writing. Set these registers with immediate values. Do not use read-modify-write instructions. When
establishing the next value by altering the existing value, write the existing value to the RAM as well as
to the register. Transfer the next value to the register after making changes in the RAM.
Read-modify-write instr uctions can be used when writing to the no reg i ster bits.
Table 4.19 Registers with Write-Only Bits
Address Register Symbol
0249h UART0 Bit Rate Register U0BRG
024Bh to 024Ah UART0 Transmit Buffer Register U0TB
0259h UART1 Bit Rate Register U1BRG
025Bh to 025Ah UART1 Transmit Buffer Register U1TB
0269h UART2 Bit Rate Register U2BRG
026Bh to 026Ah UART2 Transmit Buffer Register U2TB
0273h SI/O3 Bit Rate Register S3BRG
0277h SI/O4 Bit Rate Register S4BRG
0289h UART5 Bit Rate Register U5BRG
028Bh to 028Ah UART5 Transmit Buffer Register U5TB
0299h UART6 Bit Rate Register U6BRG
029Bh to 029Ah UART6 Transmit Buffer Register U6TB
02A9h UART7 Bit Rate Register U7BRG
02ABh to 02AAh UART7 Transmit Buffer Register U7TB
02B6h I2C0 Control Register 1 S3D0
02B8h I2C0 Status Register 0 S10
0303h to 0302h Timer A1-1 Register TA11
0305h to 0304h Timer A2-1 Register TA21
0307h to 0306h Timer A4-1 Register TA41
030Ah Three-Phase Output Buffer Register 0 IDB0
030Bh Three-Phase Output Buffer Register 1 IDB1
030Ch Dead Time Timer DTT
030Dh Timer B2 Interrupt Generation Frequency Set Counter ICTB2
0327h to 0326h Timer A0 Register TA0
0329h to 0328h Timer A1 Register TA1
032Bh to 032Ah Timer A2 Register TA2
032Dh to 032Ch Timer A3 Register TA3
032Fh to 032Eh Timer A4 Register TA4
037Dh Watchdog Timer Refresh Register WDTR
037Eh Watchdog Timer Start Register WDTS
R01DS0033EJ0220 Rev.2.20 Page 48 of 115
Nov 01, 2012
M16C/63 Group 4. Special Function Registers (SFRs)
Table 4.20 Read-Modify-Write Instructions
Function Mnemonic
Transfer MOVDir
Bit processing BCLR, BMCnd, BNOT, BSET, BTSTC, and BTSTS
Shifting ROLC, RORC, ROT, SHA, and SHL
Arithmetic operation ABS, ADC, ADCF, ADD, DEC, DIV, DIVU, DIVX, EXTS, INC, MUL, MULU, NEG,
SBB, and SUB
Decimal operation DADC, DADD, DSBB, and DSUB
Logical operation AND, NOT, OR, and XOR
Jump ADJNZ, SBJNZ
R01DS0033EJ0220 Rev.2.20 Page 49 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
5. Electrical Characteristics
5.1 Electrical Characteristics (Common to 1.8 V, 3 V, and 5 V)
5.1.1 Absolute Maximum Rating
Note:
1. Maximum value is 6.5 V.
Table 5.1 Absolute Maximum Ratings
Symbol Parameter Condition Rated Value Unit
VCC1 Supply voltage VCC1 = AVCC −0. 3 to 6.5 V
VCC2 Supply voltage VCC1 = AVCC −0. 3 to VCC1 + 0.1 (1) V
AVCC Analog supply voltage VCC1 = AVCC −0.3 to 6.5 V
VREF Analog reference voltage VCC1 = AVCC −0.3 to VCC1 + 0.1 (1) V
VIInput voltage RESET, CNVSS, BYTE,
P6_0 to P6_7, P7_2 to P7_7,
P8_0 to P8_4, P8_6, P8_7,
P9_0 to P9_7, P10_0 to P10_7
XIN
−0.3 to VCC1 + 0.3 (1) V
P0_0 to P0_7, P1_0 to P1_7,
P2_0 to P2_7, P3_0 to P3_7,
P4_0 to P4_7, P5_0 to P5_7
−0.3 to VCC2 + 0.3 (1) V
P7_0, P7_1, P8_5 −0.3 to 6.5 V
VO
Output voltage
P6_0 to P6_7, P7_2 to P7_7,
P8_0 to P8_4, P8_6, P8_7,
P9_0 to P9_7, P10_0 to P10_7
XOUT
−0.3 to VCC1 + 0.3 (1) V
P0_0 to P0_7, P1_0 to P1_7,
P2_0 to P2_7, P3_0 to P3_7,
P4_0 to P4_7, P5_0 to P5_7
−0.3 to VCC2 + 0.3 (1) V
P7_0, P7_1, P8_5 −0.3 to 6.5 V
PdPower consumption
−
40
°
C < T
opr
≤
85
°
C
300 mW
Topr Operating
temperature When the MCU is operating −20 to 85/−40 to 85 °C
Flash program erase Program area −20 to 85/−40 to 85
Data area −20 to 85/−40 to 85
Tstg Storage temperature −65 to 150 °C
R01DS0033EJ0220 Rev.2.20 Page 50 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
5.1.2 Recommended Operating Conditions
Table 5.2 Recommended Operating Conditions (1/4)
VCC1 = VCC2 = 1.8 to 5.5 V at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified.
Symbol Parameter Standard Unit
Min. Typ. Max.
VCC1 Supply
voltage CEC function is not used (VCC1 ≥ VCC2) 2.7 5.5 V
CEC function is not used (VCC1 = VCC2) 1.8 5.5 V
CEC function is used 2.7 3.63 V
VCC2 Supply voltage VCC1 ≥ 2.7 2.7 VCC1 V
VCC1
<
2.7 VCC1 V
AVCC Analog supply voltage VCC1 V
VSS Supply voltage 0 V
AVSS Analog supply voltage 0 V
VIH High input
voltage P3_1 to P3_7, P4_0 to P4_7,
P5_0 to P5_7 2.7 V
≤
VCC1
≤
5.5 V 0.8VCC2 VCC2 V
1.8 V
≤
VCC1
<
2.7 V 0.85VCC2 VCC2 V
P0_0 to P0_7, P1_0 to P1_7,
P2_0 to P2_7, P3_0
(in single-chip mode)
2.7 V
≤
VCC1
≤
5.5 V 0.8VCC2 VCC2 V
1.8 V
≤
VCC1
<
2.7 V 0.85VCC2 VCC2 V
P0_0 to P0_7, P1_0 to P1_7,
P2_0 to P2_7, P3_0
(
data input in memory expansion
and microprocessor modes
)
2.7 V
≤
VCC1
≤
5.5 V 0.5VCC2 VCC2 V
1.8 V
≤
VCC1
<
2.7 V 0.55VCC2 VCC2 V
P6_0 to P6_7, P7_2 to P7_7,
P8_0 to P8_4, P8_6, P8_7, P9_0
to P9_7, P10_0 to P10_7,
XIN, RESET, CNVSS, BYTE
2.7 V
≤
VCC1
≤
5.5 V 0.8VCC1 VCC1 V
1.8 V
≤
VCC1
<
2.7 V 0.85VCC1 VCC1 V
P7_0, P7_1, P8_5 2.7 V
≤
VCC1
≤
5.5 V 0.8VCC1 6.5 V
1.8 V
≤
VCC1
<
2.7 V 0.85VCC1 6.5 V
CEC 0.7VCC1 V
VIL Low input
voltage P3_1 to P3_7, P4_0 to P4_7, P5_0 to P5_7 0 0.2VCC2 V
P0_0 to P0_7, P1_0 t o P1_7, P2_0 to P2_7, P3_0
(in single-chip mode) 00.2V
CC2 V
P0_0 to P0_7, P1_0 t o P1_7, P2_0 to P2_7, P3_0
(
data input in memory expansion and microprocessor mode
)
0
0.16VCC2
V
P6_0 to P6_7, P7_0 t o P7_7, P8_0 to P8_7, P9_0 to P9_7,
P10_0 to P10_7
XIN, RESET, CNVSS, BYTE
00.2V
CC1 V
CEC 0.26VCC1 V
R01DS0033EJ0220 Rev.2.20 Page 51 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Note:
1. The average output current is the mean value within 100 ms.
Table 5.3 Recommended Operating Conditions (2/4)
VCC1 = VCC2 = 1.8 to 5.5 V at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified.
Symbol Parameter Standard Unit
Min. Typ. Max.
IOH(sum) High peak
output
current
(100-pin
package)
VCC1, VCC2
≥ 2.7 V Sum of IOH(peak) at P0_0 to P0_7, P1_0 to
P1_7, P2_0 to P2_7
-40.0 mA
Sum of IOH(peak) at P3_0 to P3_7, P4_0 to
P4_7, P5_0 to P5_7 -40.0 mA
Sum of IOH(peak) at P6_0 to P6_7, P7_2 to
P7_7, P8_0 to P8_4 -40.0 mA
Sum of IOH(peak) at P8_6, P8_7, P9_0 to
P9_7, P10_0 to P10_7 -40.0 mA
VCC1, VCC2
<
2.7 V Sum of IOH(peak) at P0_0 to P0_7, P1_0 t o
P1_7, P2_0 to P2_7
-5.0 mA
Sum of IOH(peak) at P3_0 to P3_7, P4_0 to
P4_7, P5_0 to P5_7 -5.0 mA
Sum of IOH(peak) at P6_0 to P6_7, P7_2 to
P7_7, P8_0 to P8_4 -5.0 mA
Sum of IOH(peak) at P8_6, P8_7, P9_0 to
P9_7, P10_0 to P10_7 -5.0 mA
High peak
output
current
(80-pin
package)
VCC1, VCC2
≥ 2.7 V Sum of all ports -80.0 mA
VCC1, VCC2
<
2.7 V Sum of all ports -10.0 mA
IOH(peak) High peak
output
current
VCC1, VCC2
≥ 2.7 V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7
−10.0 mA
VCC1, VCC2
<
2.7 V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7
−1.0 mA
IOH(avg) High
average
output
current (1)
VCC1, VCC2
≥ 2.7 V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7
−5.0 mA
VCC1, VCC2
<
2.7 V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7
−0.5 mA
R01DS0033EJ0220 Rev.2.20 Page 52 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Notes:
1. The average output current is the mean value within 100 ms.
2. Calculated by the following equation according to VCC1:
See Figure 5.1 “R el a ti o n be tw een f(BCLK) and VCC1”
Table 5.4 Recommended Operating Conditions (3/4)
VCC1 = VCC2 = 1.8 to 5.5 V at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified.
Symbol Parameter Standard Unit
Min. Typ. Max.
IOL(sum) Low peak
output
current
(100-pin
package)
VCC1, VCC2
≥ 2.7 V Sum of IOL(peak) at P0_0 to P0_7,
P1_0 to P1_7, P2_0 to P2_7, P8_6,
P8_7, P9_0 to P9_7, P10_0 to P10_7
80.0 mA
Sum of IOL(peak) at P3_0 to P3_7,
P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7,
P7_0 to P7_7, P8_0 to P8_5
80.0 mA
VCC1, VCC2
<
2.7 V Sum of IOL(peak) at P0_0 to P0_7,
P1_0 to P1_7, P2_0 to P2_7, P8_6, P8_7,
P9_0 to P9_7, P10_0 to P10_7
10.0 mA
Sum of IOL(peak) at P3_0 to P3_7,
P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7,
P7_0 to P7_7, P8_0 to P8_5
10.0 mA
Low peak
output
current
(80-pin
package)
VCC1, VCC2
≥ 2.7 V Sum of all ports 80.0 mA
VCC1, VCC2
<
2.7 V Sum of all ports 10.0 mA
IOL(peak) Low peak
output
current
VCC1, VCC2
≥ 2.7 P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
10.0 mA
VCC1, VCC2
<
2.7 V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
1.0 mA
IOL(avg) Low
average
output
current (1)
VCC1, VCC2
≥ 2.7 V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
5.0 mA
VCC1, VCC2
<
2.7 V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
0.5 mA
f(XIN) Main clock input
oscillation frequency 2.7 V
≤
VCC1
≤
5.5 V 1 20 MHz
1.8 V
≤
VCC1 < 2.7 V 1 10 MHz
f(XCIN) Sub clock oscillation frequency 32.768 kHz
f(BCLK) CPU operation clock 2.7 V
≤
VCC1
≤
5.5 V, 1 MHz
≤
f(XIN)
≤
20 MHz 20 MHz
2.1 V
≤
VCC1 < 2.7 V, 1 MHz
≤
f(XIN)
≤
10 MHz 10 MHz
1.8 V
≤
VCC1
<
2.1 V, 1 MHz
≤
f(XIN)
≤
10 MHz (Note 2) MHz
16.67 VCC125 [MHz]–×
R01DS0033EJ0220 Rev.2.20 Page 53 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.1 Relation between f(BCLK) and VCC1
Note:
1. The device is operationally guaranteed under these operating conditions.
Figure 5.2 Ripple Waveform
Table 5.5 Recommended Operating Conditions (4/4)(1)
VCC1 = 1.8 to 5.5 V, VSS = 0 V, and Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified.
The ripple voltage must not exceed Vr(VCC1) and/or dVr(VCC1)/dt.
Symbol Parameter Standard Unit
Min. Typ. Max.
Vr(VCC1) Allow ab le ri pp l e voltage VCC1 = 5.0 V 0.5 Vp-p
VCC1 = 3.0 V 0.3 Vp-p
VCC1 = 2.0 V 0.2 Vp-p
dVr(VCC1)/dt Ripple voltage falling gradient VCC1 = 5.0 V 0.3 V/ms
VCC1 = 3.0 V 0.3 V/ms
VCC1 = 2.0 V 0.3 V/ms
f
(BCLK)
[MHz] 20
5
1.8 2.7 5.5
V
cc1 [V]
2.1
10
Vr( )
VCC1
VCC1
R01DS0033EJ0220 Rev.2.20 Page 54 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
5.1.3 A/D Conversion Characteristics
Notes:
1. Use when AVCC = VCC1 = VCC2.
2. Flash memory rewrite d isabled. Except for the a nalog input pin, set the pi ns to be measured as input p orts and
connect them to VSS. See Figure 5.3 “A/D Accuracy Measure Circuit”.
3. PUMPON bit in the ADCON1 register is 1 (Voltage multiplier ON)
Table 5.6 A/D Conversion Characteristics (1/2) (1)
AVCC = VCC1 = VCC2 = VREF = 1.8 to 5.5 V, VSS = AVSS = 0 V at Topr = -20°C to 85°C/-40°C to 85°C unless otherwis e
specified.
Symbol Parameter Measuring Condition Standard Unit
Min. Typ. Max.
- Resolution AVCC = VCC1 = VCC2 = VREF 10 Bits
INL Integral non-linearity error 10 bits VCC1 =
5.0 V AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input,
ANEX0, ANEX1 input
(Note 2)
±3 LSB
VCC1 =
3.3 V AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input,
ANEX0, ANEX1 input
(Note 2)
±3 LSB
VCC1 =
3.0 V AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input,
ANEX0, ANEX1 input
(Note 2)
±3 LSB
VCC1 =
2.2 V (3) AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input
(Note 2)
±6 LSB
VCC1 =
1.8 V (3) AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input
(Note 2)
±6 LSB
- Absolute accuracy 10 bits VCC1 =
5.0 V AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input,
ANEX0, ANEX1 input
(Note 2)
±3 LSB
VCC1 =
3.3 V AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input,
ANEX0, ANEX1 input
(Note 2)
±3 LSB
VCC1 =
3.0 V AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input,
ANEX0, ANEX1 input
(Note 2)
±3 LSB
VCC1 =
2.2 V (3) AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input
(Note 2)
±6 LSB
VCC1 =
1.8 V (3) AN0 to AN7 input,
AN0_0 to AN0_7 input,
AN2_0 to AN2_7 input
(Note 2)
±6 LSB
R01DS0033EJ0220 Rev.2.20 Page 55 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.3 A/D Accuracy Measure Circuit
Notes:
1. Use when AVCC = VCC1 = VCC2.
2. Do not use A/D converter when VCC1 > VCC2.
3. When analog input voltage is over reference voltage, the result of A/D conversion is 3FFh.
4. Flash memory rewrite d isabled. Except for the a nalog input pin, set the pi ns to be measured as input p orts and
connect them to VSS. See Figure 5.3 “A/D Accuracy Measure Circuit”.
5.1.4 D/A Conversion Characteristics
Notes:
1. This applies when using one D/A converter, with the D/A register for the unused D/A converter set to 00h.
2. The current consumption of the A/D converter is not included. Also, the I VREF of t he D/A converter will flow even
if the ADSTBY bit in the ADCON1 register is 0 (A/D operation stopped (standby)).
Table 5.7 A/D Conversion Characteristics (2/2) (1)
AVCC = VCC1 = VCC2 = VREF = 1.8 to 5.5 V,
VSS = AVSS = 0 V at Topr = -20°C to 85°C/-40°C to 85°C unless
otherwise
specified.
Symbol Parameter Measuring Condition Standard Unit
Min. Typ. Max.
φAD A/D operating clock frequency 4.0 V ≤ VREF ≤ AVCC ≤ 5.5 V 2 20 MHz
3.2 V ≤ VREF ≤ AVCC ≤ 5.5 V 2 16 MHz
3.0 V ≤ VREF ≤ AVCC ≤ 5.5 V 2 10 MHz
1.8 V ≤ VREF ≤ AVCC ≤ 5.5 V 2 5 MHz
- Tolerance level impedance 3 kΩ
DNL Differential non-linearity error (4) ±1 LSB
- Offset error (4) ±3 LSB
- Gain error (4) ±3 LSB
tCONV 10-bit conversion time VCC1 = 5 V, φAD = 20 MHz 2.15 μs
tSAMP Sampling time 0.75 μs
VREF Reference voltage 1.8 AVCC V
VIA Analog input voltage (2), (3) 0V
REF V
Table 5.8 D/A Conversion Characteristics
VCC1
=
AVCC
=
VREF
=
3.0
to
5.5
V,
VSS
=
AVSS
=
0
V
at
Topr
=
-20°C
to 85°C/-40°C to 85 °C unless otherwise specified.
Symbol Parameter M easuring Condition Standard Unit
Min. Typ. Max.
- Resolution 8Bits
- Absolute Accuracy 2.5 LSB
tSU Setup Time 3μs
ROOutput Resistance 568.2k
Ω
IVREF Reference Power Supply Input Current See Notes 1 and 21.5 mA
AN Analog input
AN: One of the analog input pin
P0 to P10: I/O pins other than AN
P0 to P10
R01DS0033EJ0220 Rev.2.20 Page 56 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
5.1.5 Flash Memory Electrical Characteristics
Notes:
1. Set the PM17 bit in the PM1 register to 1 (one wait).
2. When the frequency is 1.8 ≤ VCC1 ≤ 3.0 V, set the FMR17 bit in the FMR1 register to 0 (one wait) or the PM17 bit
in the PM1 register to 1 (one wait)
3. Set the PM17 bit in the PM1 register to 1 (one wait). When using 125 kHz on-chip oscillator clock or sub clock as
the CPU clock source, a wait is not necessary.
Notes:
1. Definition of program and erase cycles:
The program and erase cycles refer to the number of per-block erasures. If the program and erase cycles are n
(n = 1,000), each block can be erased n times. For example, if a block is erased after writing 2 word data 16,384
times, each to a different address, this counts as one program and erase cycles. Data cannot be written to the
same address more than once without eras ing the block (rewrite prohibited).
2. Cycles to guarantee all elect r ical characteristics after program and erase. (1 to Min. value can be guaranteed).
3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresse s in turn so that as much of the block as possib le is used up before performing an erase
operation. It is advisable to retain data on the erasure cycles of each block and limit the number of erase
operations to a certain number.
4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least thre e times until the erase error does not occur.
5. Customers desiring pro gram/erase failure rate informatio n should contact a Renesas Electronics sales office.
6. The data hold time includes time t hat the power supply is off or the clock is not supplied.
7. After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the
erase seque nce cannot be completed.
Table 5.9 CPU Clock When Operating Flash Memory (f(BCLK))
VCC1 = 1.8 to 5.5 V, Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specif ied.
Symbol Parameter Conditions Standard Unit
Min. Typ. Max.
- CPU rewrite mode 10 (1) MHz
f(SLOW_R ) Sl o w re ad mode 5 (3) MHz
- Low current consumption read mode fC(32.768) 35 kHz
- Data flash read 3.0 V < VCC1 ≤ 5.5 V 20 (2) MHz
Table 5.10 Flash Memory (Program ROM 1, 2) Electrical Characteristics
VCC1 = 2.7 to 5.5 V at Topr = 0°C to 60°C (option: -40°C to 85°C), unless otherwise specified.
Symbol Parameter Conditions Standard Unit
Min. Typ. Max.
-Program and erase cycles (1), (3), (4) VCC1 = 3.3 V, Topr = 25°C1,000 (2) times
- 2 word program time VCC1 = 3.3 V, Topr = 25°C150 4000 μs
- Lock bit program tim e VCC1 = 3.3 V, Topr = 25°C70 3000 μs
- Block erase time VCC1 = 3.3 V, Topr = 25°C0.2 3.0 s
td(SR-SUS) Time delay from suspend request
until suspend ms
-Interval from erase start/restart
until following suspend request 0μs
-Suspend interval necessary for
auto-erasure to complete (7) 20 ms
-Time from suspend until erase
restart μs
- Program, erase voltage 2.7 5.5 V
- Read voltage Topr= -20°C to 85°C/-40°C to 85°C2.7 5.5 V
- Program, erase temperatu r e 0 60 °C
tPS Flash memory circuit stabilization wait time 50 μs
-Data ho l d time (6) Ambient temperature = 55°C 20 year
53
fBCLK()
----------------+
30 1
fBCLK()
----------------+
R01DS0033EJ0220 Rev.2.20 Page 57 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Notes:
1. Definition of program and erase cycles
The program and erase cycles refer to the number of per-block erasures.
If the program and erase cycles are n (n = 10,000), each block can be erased n times.
For example, if a 4 KB block is erased after writing 2 word data 1,024 times, each to a different address, this
counts as one program and erase cycles. Data cannot be written to the same address more than once without
erasing the block (rewrite prohibited).
2. Cycles to guarantee all elect r ical characteristics after program and erase. (1 to Min. value can be guaranteed).
3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresse s in turn so that as much of the block as possib le is used up before performing an erase
operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be
minimized by programming up to 256 groups before erasing them all in one operation. In addition, averaging the
erasure cycles between blocks A and B can further reduce the actual erasure cycles. It is also advisable to retain
data on the erasure cycles of each block and limit the number of erase operations to a certain number.
4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least thre e times until the erase error does not occur.
5. Customers desiring pro gram/erase failure rate informatio n should contact a Renesas Electronics sales office.
6. The data hold time includes time t hat the power supply is off or the clock is not supplied.
7. After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the
erase seque nce cannot be completed.
Table 5.11 Flash Memory (Data Flash) Electrical Characteristics
VCC1 = 2.7 to 5.5 V at Topr = -20 to 8 5 °C/-40 to 85°C, unless otherwise specified.
Symbol Parameter Conditions Standard Unit
Min. Typ. Max.
-Program and erase cycles (1), (3), (4) VCC1 = 3.3 V, Topr = 25°C10,000 (2) times
- 2 word program time VCC1 = 3.3 V, Topr = 25°C300 4000 μs
- Lock bit prog ra m tim e VCC1 = 3.3 V, Topr = 25°C140 3000 μs
- Block erase tim e VCC1 = 3.3 V, Topr = 25°C0.2 3.0 s
td(SR-SUS) Time delay from suspend request
until suspend ms
-Interval from erase start/restart until
following suspend request 0μs
-Suspend interval necessary for
auto-erasure to complete (7) 20 ms
-Time from suspend until erase
restart μs
- Program, erase voltage 2.7 5.5 V
- Read voltage 2.7 5.5 V
- Program, erase temperature −20/−40 85 °C
tPS Flash memory circuit stabilization wait time 50 μs
-Data hold time (6) Ambient temperature = 55 °C20 year
53
fBCLK()
----------------+
30 1
fBCLK()
----------------+
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Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
5.1.6 Voltage Detector and Power Supply Circuit Electrical Characteristics
Notes:
1. Select the voltage detection level with the VDSEL1 bit i n the OFS1 address.
2. Necessary time until the voltage detector operates when setting to 1 again after setting the VC25 bit in the VCR2
register to 0.
3. Time from when passing the Vdet0 until when a voltage monitor 0 reset is generated.
Notes:
1. Select the voltage detection level with bits VD1S0 to VD1S3 in the VD1LS register.
2. Necessary time until the voltage detector operates when setting to 1 again after setting the VC26 bit in the VCR2
register to 0.
3. Time from when passing the Vdet1 until when a voltage monitor 1 reset is generated.
Table 5.12 Voltage Detector 0 Electrical Characteristics
The measurement condition is VCC1 = 1.8 to 5.5 V, Topr = -20°C to 85°C/-40°C to 85°C, unless otherwise specified.
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
Vdet0 Voltage detection level Vdet0_0 (1) When VCC1 is falling. 1.80 1.90 2.10 V
Voltage detection level Vdet0_2 (1) When VCC1 is falling. 2.70 2.85 3.00 V
-Voltage detector 0 resp onse time (3) When VCC1 falls from 5 V
to (Vdet0_0 - 0.1) V 200 μs
- Voltage detector self power consumption VC25 = 1, VCC1 = 5.0 V 1.5 μA
td(E-A) Waiting time until voltage detector operation
starts (2) 100 μs
Table 5.13 Voltage Detector 1 Electrical Characteristics
The measurement condition is VCC1 = 1.8 to 5.5 V, Topr = -20°C to 85°C/-40°C to 85°C, unless otherwise specified.
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
Vdet1 Voltage detection level Vdet1_0 (1) When VCC1 is falling. 1.90 2.20 2.50 V
Voltage detection level Vdet1_6 (1) When VCC1 is falling. 2.80 3.10 3.40 V
Voltage detection level Vdet1_B (1) When VCC1 is falling. 3.55 3.85 4.15 V
Voltage detection level Vdet1_F (1) When VCC1 is falling. 4.15 4.45 4.75 V
- Hysteresis width at the rising of VCC1 in voltage
detector 1 When selecting Vdet1_0 0.10 V
When selecting Vdet1_6 to
Vdet1_F 0.15 V
-Voltage detector 1 resp onse time (3) When VCC1 falls from 5 V
to (Vdet1_0 - 0.1) V 200 μs
- Voltage detector self power consumption VC26 = 1, VCC1 = 5.0 V 1.7 μA
td(E-A) Waiting time until voltage detector operation
starts (2) 100 μs
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M16C/63 Group 5. Electrical Characteristics
Notes:
1. Necessary time until the voltage detector operate s after setting to 1 again after setting the VC2 7 bit in the VCR2
register to 0.
2. Time from when passing the Vdet2 until when a voltage monitor 2 reset is generated.
Note:
1. To use the power-on reset function, enable voltage monitor 0 reset by setting the L VDAS bit in the OFS1 address
to 0. Also, set the VDSEL1 bit to 0 (Vdet0_2).
Figure 5.4 Power-On Reset Circuit Electrical Characteristics
Table 5.14 Voltage Detector 2 Electrical Characteristics
The measurement condition is VCC1 = 1.8 to 5.5 V, Topr = -20°C to 85°C/-40°C to 85°C, unless otherwise specified.
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
Vdet2 Voltage detection level Vdet2_0 When VCC1 is falling 3.70 4.00 4.30 V
- Hysteresis widt h at the rising of VCC1 in voltage
detector 2 0.15 V
-Voltage detector 2 response time (2) When VCC1 falls from 5
V to (Vdet2_0 - 0.1) V 200 μs
- Voltage detector self power consumption VC27 = 1, VCC1 = 5.0 V 1.7 μA
td(E-A) Waiting time until voltage detector operation starts (1) 100 μs
Table 5.15 Power-On Reset Circuit
The measurement condition is VCC1 = 2.0 to 5.5 V, Topr = -20°C to 85°C/ -40°C to 85°C, unless otherwise specified.
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
Vpor1 Voltage at which power-on reset enabled (1) 0.5 V
trth External power VCC1 rise gradie nt 2.0 50000 mV/ms
tw(por) Time necessary to enable power-on re set 300 ms
Vpor1
Internal
reset signal
Voltage detection 0
circuit res p o n s e time
1
f
OCO-S
× 32
V
CC1
V (1)
det0 t
rth
t
w(por)
t
rth V (1)
det0
1
f
OCO-S
× 32
Note:
1. Vdet0 indicates the voltage detection level of the voltage detection 0 circuit.
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Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Note:
1. Waiting time until the internal power supply generator stabilizes when power is on.
Figure 5.5 Power Supply Circuit Timing Diagram
Table 5.16 Power Supply Circuit Timing Characteristics
The measurement condition is VCC1 = 1.8 to 5.5 V and Topr = 25°C, unless otherwise specified.
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
td(P-R) Internal power supply stability time when power is on (1) 5ms
td(R-S) STOP release time 150 μs
td(W-S) Low power mode wait mode release time 150 μs
CPU clock
t
d(P-R)
Intern al power supply stabilit y
time when power is on
Interrupt for
(a) Stop mode release
or
(b) Wait mode release
CPU clock (a)
(b)
t
d(R-S)
STOP release time
t
d(W-S)
Low power mode
wait mode rel ea se time
VC25, VC26, VC27
t
d(E-A)
Voltage de te ctor
operation start time
Stop Operate
Recommended
operation voltage
Voltage de te ctor
V
CC1
t
d(P-R)
t
d(R-S)
t
d(W-S)
t
d(E-A)
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M16C/63 Group 5. Electrical Characteristics
5.1.7 Oscillator Electrical Characteristics
Table 5.17 40 MHz On-Chip Oscillator Electrical Characteristics
VCC1 = 1.8 to 5.5 V, Topr = -20°C to 85°C/-40°C to 85°C, unless otherwise specified.
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
fOCO40M 40 MHz on-chip oscillator frequency Average frequency in a 10 ms period
2.7 V ≤ VCC1 < 5.5 V 36 40 44 MHz
Average frequency in a 10 ms period
1.8 V ≤ VCC1 < 2.7 V 30 40 50 MHz
tsu(fOCO40M) Wait time until 40 MHz on-chip
oscillator stabilizes 2ms
Table 5.18 125 kHz On-Chip Oscillator Electrical Characteristics
VCC1 = 1.8 to 5.5 V, Topr = −20°C to 85°C/−40°C to 85°C, unless otherwise specified.
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
fOCO-S 125 kHz on-chip oscillator frequency Average frequency in a 10 ms period 100 125 150 kHz
tsu(fOCO-S) Wait time until 125 kHz on-chip
oscillator stabilizes 20 μs
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M16C/63 Group 5. Electrical Characteristics
5.2 Electrical Characteristics (VCC1 = VCC2 = 5 V)
5.2.1 Electrical Characteristics VCC1 = VCC2 = 5 V
Note:
1. When VCC1 ≠ VCC2, refer to 5 V, 3 V, or 1.8 V standard depending on the voltage.
Table 5.19 Electrical Characteristics (1) (1)
VCC1 = VCC2 = 4.2 to 5.5 V, VSS = 0 V at Topr = −20°C to 85°C/−40°C to 85°C, f(BCLK) = 20 MHz unless otherwise specified.
Symbol Parameter Measuring
Condition Standard Unit
Min. Typ. Max.
VOH High output
voltage P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10 _0 to P10_7 IOH = −5 mA VCC1 − 2.0 VCC1 V
P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7 IOH = −5 mA VCC2 − 2.0 VCC2
VOH High output
voltage P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10 _0 to P10_7 IOH = −200 μAV
CC1 − 0.3 VCC1 V
P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7 IOH = −200 μA VCC2 − 0.3 VCC2
VOH High output voltage XOUT HIGHPOWER I OH = −1 mA VCC1 − 2.0 VCC1 V
LOWPOWER IOH = −0.5 mA VCC1 − 2.0 VCC1
High output voltage XCOUT With no load
applied 1.5 V
VOL Low output
voltage P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7 IOL = 5 mA 2.0 V
P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7 IOL = 5 mA 2.0
VOL Low output
voltage P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7 IOL = 200 μA0.45V
P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7 IOL = 200 μA 0.45
VOL Low output voltage XOUT HIGHPOWER I OL = 1 mA 2.0 V
LOWPOWER IOL = 0.5 mA 2.0
Low output voltage XCOUT With no load
applied 0V
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M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Note:
1. When VCC1 ≠ VCC2, refer to 5 V, 3 V, or 1.8 V standard depending on the voltage.
Table 5.20 Electrical Characteristics (2) (1)
VCC1 = VCC2 = 4.2 to 5.5 V, VSS = 0 V at Topr = −20°C to 85°C/−40°C to 85°C, f(BCLK) = 20 MHz unless otherwise specified.
Symbol Parameter Measuring
Condition Standard Unit
Min. Typ. Max.
VT+ - VT- Hysteresis HOLD, RDY, TA0IN to TA4IN, TB0IN to TB5IN,
INT0 to INT7, NMI, ADTRG, CTS0 to CTS2,
CTS5 to CTS7, SCL0 to SCL2, SCL5 to SCL7,
SDA0 to SDA2, SDA5 to SDA7, CLK0 to CLK7,
TA0OUT to TA4OUT,
KI0 to KI7, RXD0 to RXD2, RXD5 to RXD7,
SIN3, SIN4, SD, PMC0, PMC1, SCLMM,
SDAMM, CEC, ZP, IDU, IDV, IDW
0.5 2.0 V
VT+ - VT- Hysteresis RESET 0.5 2.5 V
IIH High input
current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
XIN, RESET, CNVSS, BYTE
VI = 5 V 5.0 μA
IIL Low input
current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
XIN, RESET, CNVSS, BYTE
VI = 0 V −5.0 μA
RPULLUP Pull-up
resistance P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7
VI = 0 V 30 50 170 kΩ
RfXIN Feedback resistance XIN 0.8 MΩ
RfXCIN Feedback resistance XCIN 8 MΩ
VRAM RAM retention voltage In stop mode 1.8 V
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Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Notes:
1. This indicates the memory in which the program to be executed exists.
2. A/D conversion is executed in repeat mode.
Table 5.21 Electrical Characteristics (3)
VCC1 = VCC2 = 4.2 to 5.5 V, VSS = 0 V at Topr = −20°C to 85°C/−40°C to 85°C, f(BCLK) = 20 MHz unless otherwise specified.
Symbol Parameter Measuring Condition Standard Unit
Min. Typ. Max.
ICC Power supply current
In single-chip, mode,
the output pin are
open and other pins
are VSS
High-speed mode f(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 1 (drive capacity High)
A/D converter stopped
10.7 mA
f(BCLK) =20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 1 (drive capacity High)
A/D converter operating (2)
11.4 mA
f(BCLK) = 20 MHz
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 0 (drive capacity Low)
A/D converter stopped
10.1 mA
f(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 1 (drive capacity High)
PCLKSTP1 = FF (peripheral clock stop)
9.1 mA
f(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 0 (drive capacity Low)
PCLKSTP1 = FF (peripheral clock stopped)
8.5 mA
40 MHz on-chip
oscillator mode Main clock stopped
40 MHz on-chip oscillator on,
divide-by-2 (f(BCLK) = 20 MHz)
125 kHz on-chip oscillator stopped
9.0 mA
125 kHz on-chip
oscillator mode Main clock stopped
40 MHz on-chip oscillator stopped,
125 kHz on-chip oscillator on, no division
FMR22 = 1 (slow read mode)
450.0 μA
Low-power mode f(BCLK) = 32 kHz
FMR22 = FMR23 = 1 (in low current consumption
read mode)
On flash memory (1)
80.0 μA
Wait mode f(BCLK) = 32 kHz
Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator on
PM25 = 1 (peripheral function clock fC operating)
Topr = 25°C
Real-time clock operating
5.6 μA
f(BCLK) = 32 kHz
Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator stopped
PM25 = 0 (peripheral function clock fC stopped)
Topr = 25°C
5.3 μA
Stop mode Topr = 25°C2.4 μA
During flash
memory program f(BCLK) = 10 MHz, PM17 = 1 (one wait)
VCC1 = 5.0 V 20.0 mA
During flash
memory erase f(BCLK) = 10 MHz, PM17 = 1 (one wait)
VCC1 = 5.0 V 30.0 mA
R01DS0033EJ0220 Rev.2.20 Page 65 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
5.2.2 Timing Requirements (Peripheral Functions and Others)
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.2.1 Reset Input (RESET Input)
Figure 5.6 Reset Input (RESET Input)
5.2.2.2 External Clock Input
Note:
1. The condition is VCC1 = VCC2 = 3.0 to 5.0 V.
Figure 5.7 External Clock Input (XIN Input)
Table 5.22 Reset Input (RESET Input)
Symbol Parameter Standard Unit
Min. Max.
tw(RSTL) RESET input low pulse width 10 μs
Table 5.23 External Clock Input (XIN Input) (1)
Symbol Parameter Standard Unit
Min. Max.
tcExternal clock input cycle time 50 ns
tw(H) External clock input high pulse width 20 ns
tw(L) External clock input low pulse width 20 ns
trExternal clock rise time 9ns
tfExternal clock fall time 9ns
RESET input
t
w(RTSL)
XIN input
t
w(H)
t
r t
f t
w(L)
t
c
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Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.2.3 Timer A Input
Figure 5.8 Timer A Input
Table 5.24 Timer A Input (Counter Input in Event Counter Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 100 ns
tw(TAH) TAiIN input high pulse width 40 ns
tw(TAL) TAiIN input low pulse width 40 ns
Table 5.25 Timer A Input (Gating Input in Timer Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 400 ns
tw(TAH) TAiIN input high pulse width 200 ns
tw(TAL) TAiIN input low pulse width 200 ns
Table 5.26 Timer A Input (External Trigger Input in One-Shot Timer Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 200 ns
tw(TAH) TAiIN input high pulse width 100 ns
tw(TAL) TAiIN input low pulse width 100 ns
Table 5.27 Timer A Input (External Trigger Input in Pulse Width Modulation Mode and
Programmable Output Mode)
Symbol Parameter Standard Unit
Min. Max.
tw(TAH) TAiIN input high pulse width 100 ns
tw(TAL) TAiIN input low pulse width 100 ns
TAiIN input
TAiOUT input
t
w(TAH)
t
c(TA)
t
w(TAL)
t
c(UP)
t
w(UPH)
t
w(UPL)
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M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
Figure 5.9 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
Table 5.28 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 800 ns
t
su(TAIN-TAOUT)
TAiOUT input setup time 200 ns
t
su(TAOUT-TAIN)
TAiIN input setup time 200 ns
TAiIN input
Two-phase pulse input in event co unter mode
TAiOUT input
t
c(TA)
t
su(TAIN-TA O UT) t
su(TAIN-TAOUT)
t
su(TAOUT-TAIN)
t
su(TAOUT-TAIN)
R01DS0033EJ0220 Rev.2.20 Page 68 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless ot he rwise specified)
5.2.2.4 Timer B Input
Figure 5.10 Timer B Input
Table 5.29 Timer B Input (Counter Input in Event Counter Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TB) TBiIN input cycle time (counted on one edge) 100 ns
tw(TBH) TBiIN input high pulse width (counted on one edge) 40 ns
tw(TBL) TBiIN input low pulse width (counted on one edge) 40 ns
tc(TB) TBiIN input cycle time (counted on both edges) 200 ns
tw(TBH) TBiIN input high pulse width (counted on both edges) 80 ns
tw(TBL) TBiIN input low pulse width (counted on both edges) 80 ns
Table 5.30 Timer B Input (Pulse Period Measurement Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TB) TBiIN input cycle time 400 ns
tw(TBH) TBiIN input high pulse width 200 ns
tw(TBL) TBiIN input low pulse width 200 ns
Table 5.31 Timer B Input (Pulse Width Measurement Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TB) TBiIN input cycle time 400 ns
tw(TBH) TBiIN input high pulse width 200 ns
tw(TBL) TBiIN input low pulse width 200 ns
TBiIN input
t
c(TB)
t
w(TBH)
t
w(TBL)
R01DS0033EJ0220 Rev.2.20 Page 69 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.2.5 Serial Interface
Figure 5.11 Serial Interface
5.2.2.6 External Interrupt INTi Input
Figure 5.12 External Interrupt INTi Input
Table 5.32 Serial Interface
Symbol Parameter Standard Unit
Min. Max.
tc(CK) CLKi input cycle time 200 ns
tw(CKH) CLKi input high pulse width 100 ns
tw(CKL) CLKi input low pulse width 100 ns
td(C-Q) TXDi output delay time 80 ns
th(C-Q) TXDi hold time 0ns
tsu(D-C) RXDi input setup time 70 ns
th(C-D) RXDi input hold time 90 ns
Table 5.33 External Interrupt INTi Input
Symbol Parameter Standard Unit
Min. Max.
tw(INH) INTi input high pulse width 250 ns
tw(INL) INTi input low pulse width 250 ns
CLKi
TXDi
RXDi
t
c(CK)
t
w(CKH)
t
w(CKL) t
h(C-Q)
t
d(C-Q) t
su (D-C ) t
h(C-D)
INTi input
t
w(INL)
t
w(INH)
R01DS0033EJ0220 Rev.2.20 Page 70 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.2.7 Multi-master I2C-bus
Figure 5.13 Multi-master I2C-bus
Table 5.34 Multi-master I2C-bus
Symbol Parameter Standard Clock Mode Fast-mode Unit
Min. Max. Min. Max.
tBUF Bus free time 4.7 1.3 μs
tHD;STA Hold time in start condition 4.0 0.6 μs
tLOW Hold time in SCL clock 0 status 4.7 1.3 μs
tRSCL, SDA signals’ rising time 1000 20 + 0.1 Cb 300 ns
tHD;DAT Data hold time 000.9μs
tHIGH Hold time in SCL clock 1 status 4.0 0.6 μs
fFSCL, SDA signals’ falling time 300 20 + 0.1 Cb 300 ns
tsu;DAT Data setup time 250 100 ns
tsu;STA Setup time in restart condition 4.7 0.6 μs
tsu;STO Stop condition setup time 4.0 0.6 μs
SDA
SCL p
ps Sr
t
LOW
t
HD;STA t
HD;DAT t
HIGH t
su;DAT t
su;STA
t
R t
F
t
HD;STA t
su;STO
t
BUF
R01DS0033EJ0220 Rev.2.20 Page 71 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Timing Requirements
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.3 Timing Requirements (Memory Expansion Mode and Microprocessor
Mode)
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
n is 1 for 1 wait setting, 2 for 2 waits setting and 3 for 3 waits setting.
3. Calculated according to the BCLK frequency as follows:
n is 2 for 2 waits setting, and 3 for 3 waits setting.
4. Calculated according to the BCLK frequency as follows:
n is 3 for 2φ + 3φ, 4 for 2φ + 4φ, 4 for 3φ + 4φ, and 5 for 4φ + 5φ.
Table 5.35 Memory Exp ansion Mode and Microproces sor Mode
Symbol Parameter Standard Unit
Min. Max.
tac1(RD-DB) Data input access time (for setting with no wait) (Note 1) ns
tac2(RD-DB) Data input access time (for setting with 1 to 3 waits) (Note 2) ns
tac3(RD-DB) Data input access time (when accessing multiplex bus area) (Note 3) ns
tac4(RD-DB) Data input access time (for setting with 2φ + 3φ or more) (Note 4) ns
tsu(DB-RD) Data input setup time 40 ns
tsu(RDY-BCLK) RDY input setup time 80 ns
th(RD-DB) Data input hold time 0ns
th(BCLK-RDY) RDY input hold time 0ns
0.5 109
×
fBCLK()
----------------------45ns[]–
n0.5+()109
×
fBCLK()
------------------------------------ 45 ns[]–
n0.5–()109
×
fBCLK()
------------------------------------45ns[]–
n109
×
fBCLK()
------------------45ns[]–
R01DS0033EJ0220 Rev.2.20 Page 72 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.14 Timing Diagram
Memory Expansion Mode and Microprocessor Mode
(Effective in wait state setting)
RDY inpu t
RD
BCLK
(Separate bus)
(Multiplexed bus)
RD
(Separate bus)
(Multiplexed bus)
t
su(RDY-BCLK) t
h(BCLK-RDY)
Measuring conditions
yV = V = 5 V
CC1 CC2
yInput timing volt age: V = 1.0 V, V = 4.0 V
IL IH
yOutput timing voltage: V = 2.5 V, V = 2.5 V
OL OH
V = V = 5 V
CC1 CC2
WR, WRL, WRH
WR, WRL, WRH
R01DS0033EJ0220 Rev.2.20 Page 73 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
5.2.4 Switching Characteristics (Memory Expansion Mode and Microprocessor
Mode)
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.4.1 In No Wait State Setting
Notes:
1. Calculated according to the BCLK frequency as follows:
f(BCLK) is 12.5 MHz or less.
2. Calculated according to the BCLK frequency as follows:
3. This standard value shows the timing when the outpu t is off, and does not
show hold time of data bus.
Hold time of data bus varies with capacitor volume and pull-up (pull-down)
resistance value.
Hold time of data bus is expressed in
t = −CR × ln(1−VOL/VCC2)
by a circuit of the right figure.
For example, when VOL = 0.2VCC2, C = 30 pF, R = 1 kΩ, hold time of output
low level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
Table 5.36 Memory Expansion Mode and Microprocessor Mode (in No Wait State Setting)
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address output delay time
See
Figure 5.15
25 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address output hold time (in relation to RD) 0ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 25 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
td(BCLK-ALE) ALE signal output delay time 15 ns
th(BCLK-ALE) ALE signal output hold time −4ns
td(BCLK-RD) RD signal output delay time 25 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 25 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
0.5 109
×
fBCLK()
----------------------40ns[]–
0.5 109
×
fBCLK()
----------------------10ns[]–
DBi
R
C
R01DS0033EJ0220 Rev.2.20 Page 74 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.15 Ports P0 to P10 Measurement Circuit
P6
P7
P8
P10
P9
P0
P1
P2
P3
P4
P5
30 pF
R01DS0033EJ0220 Rev.2.20 Page 75 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.16 Timing Diagram
BCLK
CSi
ADi
ALE
RD
25ns(max.)
0ns(min.)
Hi-Z
DBi
0ns(min.)
BHE
Read timing
Memory Expansion Mode and Microprocessor Mode
(in no wait state settin g)
25ns(max.) 0ns(min.)
BCLK
CSi
ADi
ALE
BHE
40ns(max.) 0ns(min.)
DBi
Write timing
Hi-Z
1
V = V = 5V
CC1 CC2
15ns(max.)
t
h(BCLK-CS)
t
cyc
t
h(BCLK-AD)
0ns(min.)
t
d(BCLK - AD)
t
d(BCLK-ALE) -4ns(min.) t
h(RD-AD)
0ns(min.)
t
d(BCLK-RD) t
h(BCLK-RD)
0ns(min.)
t
ac1(RD-DB)
t
su(DB- RD) t
h(RD-DB)
t
h(BCLK-ALE)
25ns(max.)
t
d(BCLK - C S )
25ns(max.)
t
d(BCLK-CS)
25ns(max.) 0ns(min.)
t
h(BCLK-CS)
t
cyc
25ns(max.) 0ns(min.)
15ns(max.)
t
d(BCLK-ALE) -4ns(min.)
t
h(BCLK - ALE)
t
d(BCLK-A D) t
h(BCLK-AD)
t
h(WR-AD)
t
d(BCLK-WR) t
h(BCLK-WR)
t
d(BCLK-DB) t
h(BCLK-DB)
t
d(DB-WR) t
h(WR-DB)
t =
cyc
Measuring conditions
yV = V = 5V
CC1 CC2
yInput timing voltage: V = 0.8 V, V = 2.0 V
IL IH
yOutput timing voltage: V = 0.4 V, V = 2.4 V
OL OH
f
(BCLK)
40ns(min.)
(0.5×t -40)ns(min.)
cyc (0.5 × t -10)ns(min.)
cyc
(0.5 ×t -10)ns(min.)
cyc
(0.5 ×t -45)ns(max.)
cyc
WR, WRL,
WRH
R01DS0033EJ0220 Rev.2.20 Page 76 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Switching Characteristics
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.4.2 In 1 to 3 Waits Setting and When Accessing External Area
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
3. This standard value shows the timing when the output is off,
and does not show hold time of data bus.
Hold time of data bus varies with capacitor volume and pull-up
(pull-down) resistance value.
Hold time of data bus is expressed in
t = −CR × ln(1 − VOL/VCC2)
by a circuit of the right figure.
For example, when VOL = 0.2VCC2, C = 30 pF, R = 1 kΩ, hold
time of output low level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
Table 5.37 Memory Expansion Mode and Microprocessor Mode (in 1 to 3 Waits Settin g and When
Accessing External Area)
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address output delay time
See
Figure 5.15
25 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address outpu t hold time (in relation to RD) 0ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 25 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
td(BCLK-ALE) ALE signal output delay time 15 ns
th(BCLK-ALE) ALE signal output hold time -4 ns
td(BCLK-RD) RD signal output delay time 25 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 25 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR)(3) (Note 2) ns
n0.5–()109
×
fBCLK()
------------------------------------40ns[]–
n is 1 for 1 wait setting, 2 for 2 waits setting and 3 for 3 waits setting.
When n = 1, f(BCLK) is 12.5 MHz or less.
0.5 109
×
fBCLK()
----------------------10ns[]–
DBi
R
C
R01DS0033EJ0220 Rev.2.20 Page 77 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.17 Timing Diagram
BCLK
CSi
ADi
ALE
RD
Hi-Z
DBi
BHE
Read timing
BCLK
CSi
ADi
ALE
BHE
DBi
Write timing
Hi-Z
Memory Expansion Mode and Microprocessor Mode
(in 1 to 3 waits setting and when accessing external area)
1
V = V = 5V
CC1 CC2
t
d(BCLK - CS)
25ns(max.)
0ns(min.)
t
cyc
t
h(BCLK-AD)
t
d(BCLK-AD)
25ns(max.)
t
d(BCLK-ALE)
15ns(max.)
0ns(min.)
t
h(BCLK-CS)
-4ns(min.)
t
h(BCLK-ALE) 0ns(min.)
t
h(RD-AD)
t
d(BCLK-RD)
25ns(max.) 0ns(min.)
t
h(BCLK-RD)
{(n+0.5)×t -45}ns(max.)
cyc
t
su(DB-RD) 0ns(min.)
t
h(RD-DB)
t
d(BCLK-CS)
25ns(max.) 0ns(min.)
t
h(BCLK-CS)
t
cyc
t
d(BCLK-AD)
25ns(max.) 0ns(min.)
t
h(BCLK-AD)
t
d(BCLK-ALE)
15ns(max.) -4ns(min.)
t
h(BCLK - ALE)
(0.5 ×t -10)ns(min.)
cyc
t
h(WR-AD)
t
ac2(RD-DB)
t
d(BCLK- WR)
25ns(max.) 0ns(min.)
t
h(BCLK-WR)
t
d(BCLK-DB)
40ns(max.) 0ns(min.)
t
h(WR-DB)
t
d(DB-WR)
{(n-0.5)×t -40}ns(min.)
cyc (0.5× t -10)ns(min.)
cyc
t =
cyc
t
h(BCLK-DB)
n: 1 (when 1 wait)
2 (when 2 waits)
3 (when 3 waits)
Measuring conditions
yV = V = 5V
CC1 CC2
yInput timing voltage: V = 0.8 V, V = 2.0 V
IL IH
yOutput timing voltage: V = 0.4 V, V = 2.4 V
OL OH
f
(BCLK)
40ns(min.)
WR, WRL,
WRH
R01DS0033EJ0220 Rev.2.20 Page 78 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Switching Characteristics
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.4.3 In 2 or 3 Waits Setting, and When Accessing External Area and Using
Multiplexed Bus
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
n is 2 for 2-wait setting, 3 for 3-wait setting.
3. Calculated according to the BCLK frequency as follows:
4. Calculated according to the BCLK frequency as follows:
5. When using multiplex bus, set f(BCLK) 12.5 MHz or less.
Table 5.38 Memory Exp ansion Mode an d Microprocessor Mode (in 2 or 3 W aits Setting, and When
Accessing External Area and Using Multiplexed Bus) (5)
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address output delay time
See
Figure 5.15
25 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address output hold time (in relation to RD) (Note 1) ns
th(WR-AD) Address output hold time (in relation to WR) (Note 1) ns
td(BCLK-CS) Chip select output delay time 25 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
th(RD-CS) Chip select output hold time (in relation to RD) (Note 1) ns
th(WR-CS) Chip select output hold time (in relation to WR) (Note 1) ns
td(BCLK-RD) RD signal output delay time 25 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 25 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 2) ns
th(WR-DB) Data output hold time (in relation to WR) (Note 1) ns
td(BCLK-ALE) ALE signal output delay time (in relation to BCLK) 15 ns
th(BCLK-ALE) ALE signal output hold time (in relation to BCLK) −4ns
td(AD-ALE) ALE signal output delay time (in relation to Address) (Note 3) ns
th(AD-ALE) ALE signal output hold time (in relation to Address) (Note 4) ns
td(AD-RD) RD signal output delay from the end of address 0ns
td(AD-WR) WR signal output delay from the end of address 0ns
tdz(RD-AD) Address output floating start time 8ns
0.5 109
×
fBCLK()
----------------------10ns[]–
n0.5–()109
×
fBCLK()
------------------------------------40ns[]–
0.5 109
×
fBCLK()
----------------------25ns[]–
0.5 109
×
fBCLK()
----------------------15ns[]–
R01DS0033EJ0220 Rev.2.20 Page 79 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.18 Timing Diagram
Memory Expansion Mode and Microprocessor Mode
(in 2 or 3 waits setting, and when accessing external area and using multiplexed bus)
BCLK
CSi
ADi
ALE
RD
BHE
ADi
/DBi
Read timing
BCLK
CSi
ADi
ALE
BHE
ADi
/DBi Data output
Write timing
Address
Address
Data input
Address
Address
V = V = 5V
CC1 CC2
t
d(BCLK-CS)
25ns(max.) t
cyc (0.5×t -10)ns(min.)
cyc
t
h(RD-CS) t
h(BCLK-CS)
0ns(min.)
(0.5×t -25ns(min.)
cyc
t
d(AD-ALE) (0.5× t -15ns(min.)
cyc
t
h(ALE-AD)
t
dz(RD-AD)
8ns(max.)
{(n-0.5) ×t -45}ns(max.)
cyc
t
ac3(RD-DB) t
su(DB-RD) t
h(RD-DB)
0ns(min.)
0ns(min.)
t
d(AD-RD) t
h(BCLK-AD)
0ns(min.)
15ns(max.)
t
d(BCLK - ALE) t
h(BCLK-ALE)
-4ns(min.)
t
d(BCLK-AD)
25ns(max.)
t
h(RD-AD)
(0.5× t -10)ns(min.)
cyc
25ns(max.)
t
d(BCLK-RD) 0ns(min.)
t
h(BCLK-RD)
t
cyc
t
d(BCLK-CS)
25ns(max.) (0.5 ×t -10)ns(min.)
cyc
t
h(WR-CS) t
h(BCLK-CS)
0ns(min.)
t
d(BCLK-DB)
40ns(max.) t
h(BCLK-DB)
0ns(min.)
(0.5×t -25ns(min.)
cyc
t
d(AD-ALE) {(n-0.5)×t -40}ns(min.)
cyc
t
d(DB-WR) (0.5×t -10)ns(min.)
cyc
t
h(WR-DB)
t
d(BCL K- AD)
25ns(max.) t
h(BCLK-AD)
0ns(min.)
15ns(max.)
t
d(BCLK-ALE) t
h(BCLK-ALE)
-4ns(min.) 0ns(min.)
t
d(AD-WR) t
h(WR-AD)
(0.5×t -10)ns(min.)
cyc
25ns(max.)
t
d(BCL K- WR) 0ns(min.)
t
h(BCLK-WR)
n: 2 (when 2 waits)
3 (when 3 waits)
Measuring conditions
yV = V = 5V
CC1 CC2
yInput timing voltage: V = 0.8 V, V = 2.0 V
IL IH
yOutput timing voltage: V = 0.4 V, V = 2.4 V
OL OH
40ns(min.)
WR, WRL,
WRH
R01DS0033EJ0220 Rev.2.20 Page 80 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Switching Characteristics
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.4.4 In Wait State Setting 2φ + 3φ, 2φ + 4φ, 3φ + 4φ, and 4φ + 5φ, and When
Accessing External Area
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
3. This standard value shows the timing when the output is off,
and does not show hold time of data bus.
Hold time of data bus varies with capacitor volume and pull-up
(pull-down) resistance value.
Hold time of data bus is expressed in
t = −CR × ln(1 − VOL/VCC2)
by a circuit of the right figure.
For example, when VOL = 0.2VCC2, C = 30 pF, R = 1 kΩ, hold
time of output low level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
Table 5.39 Memory Expansion Mode and Microprocessor Mode (i n Wait St a te Settin g 2 φ + 3 φ, 2 φ
+ 4φ, 3φ + 4φ, and 4φ + 5φ, and When Accessing Externa l Area)
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address output delay time
See
Figure 5.15
25 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address outpu t hold time (in relation to RD) 0ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 25 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
td(BCLK-ALE) ALE signal output delay time 15 ns
th(BCLK-ALE) ALE signal output hold time -4 ns
td(BCLK-RD) RD signal output delay time 25 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 25 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
n0.5–()109
×
fBCLK()
------------------------------------40ns[]–
n is 3 for 2φ + 3φ, 4 for 2φ + 4φ, 4 for 3φ + 4φ, and 5 for 4φ + 5φ.
0.5 109
×
fBCLK()
----------------------10ns[]–
DBi
R
C
R01DS0033EJ0220 Rev.2.20 Page 81 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.19 Timing Diagram
Read timing
Write timing
BCLK
CSi
ALE
DBi
ADi
BHE
WR, WRL
WRH
BCLK
CSi
ALE
DBi
ADi
BHE
RD
t
cyc
t
d(BCLK - CS )
25ns(max.)
t
d(BCLK-AD)
25ns(max.)
t
d(BCLK-ALE)
15ns(max.) th(BCLK-ALE)
-4ns(min.)
t
d(BCLK-RD)
25ns(max.)
Hi-Z t
su(DB-RD)
Hi-Z
t
d(BCLK- CS)
25ns(max.)
t
d(BCLK-AD)
25ns(max.)
t
d(BCLK-ALE)
15ns(max.)
t
d(BCLK-WR)
25ns(max.)
(0.5 × t -10)ns(min.)
cyc
t
ac4(RD-DB)
(n × t -45)ns(max.)
cyc
V = V = 5V
CC1 CC2
Memory Expansion Mode and Microprocessor Mode
(in wait state setting 2 φ + 3 φ, 2 φ + 4 φ, 3φ + 4 φ, and 4 φ + 5 φ, and
when accessing external area)
n: 3 (when 2 φ + 3 φ)
4 (when 2 φ + 4 φ or 3 φ + 4 φ)
5 (when 4 φ + 5 φ)
th(BCLK-AD)
0ns(min.)
th(BCLK-CS)
0ns(min.)
th(RD-AD)
0ns(min.)
th(BCLK-RD)
0ns(min.)
th(RD-DB)
0ns(min.)
th(BCLK-CS)
0ns(min.)
th(BCLK-AD)
0ns(min.)
th(BCLK-ALE)
-4ns(min.) th(WR-AD)
th(BCLK-WR)
0ns(min.)
t
d(DB-WR)
th(BCLK-DB)
0ns(min.)
{(n-0.5) × t -40}ns(min.)
cyc
th(WR-DB)
(0.5 × t -10)ns(min.)
cyc
Measuring conditions
yV = V = 5V
CC1 CC2
yInput timing voltage: V = 0.8 V, V = 2.0 V
IL IH
yOutput timing voltage: V = 0.4 V, V = 2.4 V
OL OH
t
cyc = 1
f(BCLK)
t
cyc
td(BCLK-DB)
40ns(max.)
40ns(min.)
R01DS0033EJ0220 Rev.2.20 Page 82 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 5 V
Switching Characteristics
(VCC1 = VCC2 = 5 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.2.4.5 In Wait State Setting 2φ + 3φ, 2φ + 4φ, 3φ + 4φ, and 4φ + 5φ, and When
Inserting 1 to 3 Recovery Cycles and Accessing External Area
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
3. This standard value shows the timing when the output is off, and does not
show hold time of data bus.
Hold time of data bus varies with capacitor volume and pull-up (pull-down)
resistance value.
Hold time of data bus is expressed in
t = −CR × ln(1−VOL/VCC2)
by a circuit of the right figure.
For example, when VOL = 0.2VCC2, C = 30 pF, R = 1 kΩ, hold time of output
low level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
4. Calculated according to the BCLK frequency as follows:
Table 5.40 Memory Exp ansion and Microprocessor Modes (in Wait State Setting 2φ + 3φ, 2φ + 4φ,
3φ + 4φ, and 4φ + 5φ, and When Inserting 1 to 3 Recovery Cycles and Accessing
External Area)
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address output delay time
See
Figure 5.15
25 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address output hold time (in relation to RD) (Note 4) ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 25 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
td(BCLK-ALE) ALE signal output delay time 15 ns
th(BCLK-ALE) ALE signal output hold time -4 ns
td(BCLK-RD) RD signal output delay time 25 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 25 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
n109
×
fBCLK()
------------------40ns[]–
n is 3 for 2φ + 3φ, 4 for 2φ + 4φ, 4 for 3φ + 4φ, and 5 for 4φ + 5φ.
m109
×
fBCLK()
-------------------10ns[]–
m is 1 when 1 recovery cycle is inserted, 2 when 2 recovery cycles are inserted, and
3 when 3 recovery cycles are inserted.
DBi
R
C
m109
×
fBCLK()
-------------------0ns[]+
m is 1 when 1 recovery cycle is inserted, 2 when 2 recovery cycles are inserted, and
3 when 3 recovery cycles are inserted.
R01DS0033EJ0220 Rev.2.20 Page 83 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.20 Timing Diagram
Read timing
Write timing
BCLK
CSi
ALE
DBi
ADi
BHE
BCLK
CSi
ALE
DBi
ADi
BHE
RD
t
cyc
t
d(BCLK-CS)
25ns(max.)
Hi-Z t
su(DB-RD)
Hi-Z
V = V = 5V
CC1 CC2
Memory Expansion Mode and Microprocessor Mode
(in wait state setting 2 φ + 3 φ, 2 φ + 4 φ, 3φ + 4 φ, and 4 φ + 5 φ, and
when inserting 1 to 3 recovery cycles and accessing external area)
n: 3 (when 2 φ + 3 φ)
4 (when 2 φ + 4 φ or 3 φ + 4 φ)
5 (when 4 φ + 5 φ)
th(BCLK-CS)
0ns(min.)
t
d(BCLK-AD)
25ns(max.) th(BCLK-AD)
0ns(min.)
t
d(BCLK-ALE)
15ns(max.) th(BCLK-ALE)
-4ns(min.)
t
d(BCLK-RD)
25ns(max.) th(BCLK-RD)
0ns(min.)
th(RD-DB)
0ns(min.)
t
cyc
t
d(BCLK-CS)
25ns(max.)
t
d(BCLK-AD)
25ns(max.)
th(BCLK-ALE)
-4ns(min.)
t
d(BCLK-ALE)
15ns(max.)
t
d(BCLK-WR)
25ns(max.)
t
d(BCLK-DB)
40ns(max.)
th(BCLK-CS)
0ns(min.)
th(BCLK-AD)
0ns(min.)
th(WR-AD)
(m × t -10)ns(min.)
cyc
th(BCLK-WR)
0ns(min.)
th(BCLK-DB)
0ns(min.)
th(WR-DB)
(m × t -10)ns(min.)
cyc
(n × t -45)ns(max.)
cyc
t
ac4(RD-DB)
(n × t -40)ns(min.)
cyc
t
d(DB-WR)
t
cyc = 1
f(BCLK)
Measuring conditions
yV = V = 5V
CC1 CC2
yInput timing voltage: V = 0.8 V, V = 2.0 V
IL IH
yOutput timing voltage: V = 0.4 V, V = 2.4 V
OL OH m: 1 (when 1 recovery cycle inserted )
2 (when 2 recovery cycles inserted)
3 (when 3 recovery cycles inserted)
th(RD-AD)
(m × t +0)ns(min.)
cyc
WR, WRL
WRH
40ns(min.)
R01DS0033EJ0220 Rev.2.20 Page 84 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
5.3 Electrical Characteristics (VCC1 = VCC2 = 3 V)
5.3.1 Electrical Characteristics VCC1 = VCC2 = 3 V
Note:
1. When VCC1 ≠ VCC2, refer to 5 V, 3 V, or 1.8 V standard depending on the voltage.
Table 5.41 Electrical Characteristics (1) (1)
VCC1 = VCC2 = 2.7 to 3.3 V, VSS = 0 V at Topr = -20°C to 85°C/-40°C to 85°C, f(BCLK) = 20 MHz unless otherwise specified.
Symbol Parameter Measuring
Condition Standard Unit
Min. Typ. Max.
VOH High
output
voltage
P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7 IOH = −1 mA VCC1 − 0.5 VCC1 V
P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7 IOH = −1 mA VCC2 − 0.5 VCC2
VOH High output voltage XOUT HIGHPOWER IOH = −0.1 mA VCC1 − 0.5 VCC1 V
LOWPOWER IOH = −50 μAV
CC1 − 0.5 VCC1
High output voltage XCOUT With no load applied 1.5 V
VOL Low
output
voltage
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7 IOL = 1 mA 0.5 V
P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7 IOL = 1 mA 0.5
CEC IOL = 1 mA 0 0.5 V
VOL Low output voltage XOUT HIGHPOWER IOL = 0.1 mA 0. 5 V
LOWPOWER IOL = 50 μA0.5
Low output voltage XCOUT With no load app lied 0 V
VT+-VT- Hysteresis HOLD, RDY, TA0IN to TA4IN,
TB0IN to TB5IN, INT0 to INT7, NMI,
ADTRG, CTS0 to CTS2, CTS5 to CTS7,
SCL0 to SCL2, SCL5 to SCL7,
SDA0 to SDA2, SDA5 to SDA7,
CLK0 to CLK7, TA0OUT to TA4OUT,
KI0 to KI7, RXD0 to RXD2, RXD5 to RXD7,
SIN3, SIN4, SD, PMC0, PMC1, SCLMM,
SDAMM, ZP, IDU, IDV, IDW
0.2 1.0 V
CEC 0.2 0.5 1.0 V
RESET 0.2 1.8 V
IIH High input
current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
XIN, RESET, CNVSS, BYTE
VI = 3 V 4.0 μA
−Leakage current in powered-off state CEC VCC1 = 0 V 1.8 μA
IIL Low input
current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7,
P9_0 to P9_7, P10_0 to P10_7
XIN, RESET, CNVSS, BYTE
VI = 0 V −4.0 μA
RPULLUP Pull-up
resistance P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7,
P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4,
P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7
VI = 0 V 50 100 500 kΩ
RfXIN Feedback resistance XIN 0.8 MΩ
RfXCIN Feedback resistance XCIN 8 MΩ
VRAM RAM retention voltage In stop mode 1.8 V
R01DS0033EJ0220 Rev.2.20 Page 85 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Notes:
1. This indicates the memory in which the program to be executed exists.
2. A/D conversion is executed in repeat mode.
Table 5.42 Electrical Characteristics (2)
V
CC1
=
V
CC2
=
2.7
to
3.3
V,
V
SS
=
0
V
at
T
opr
=
−
20
°
C
to
85
°
C/
−
40
°
C
to
85
°
C,
f
(BCLK)
=
20
MHz unless otherwise specified.
Symbol Parameter Measuring Condition Standard Unit
Min. Typ. Max.
ICC Power supply current
In single-chip, mode,
the output pin are
open and other pins
are VSS
High-speed mode f(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 1 (drive capacity High)
A/D converter stopped
9.5 mA
f(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 1 (drive capacity High)
A/D converter operating (2)
10.2 mA
f(BCLK) = 20 MHz
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 0 (drive capacity Low)
A/D converter stopped
9.2 mA
f(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 1 (drive capacity High)
PCLKSTP1 = FF (peripheral clock stopped)
7.9 mA
f(BCLK) = 20 MHz (no division)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
CM15 = 0 (drive capacity Low)
PCLKSTP1 = FF (peripheral clock stopped)
7.6 mA
40 MHz on-chip
oscillator mode Main clock stopped
40 MHz on-chip oscillator on,
divide-by-2 (f(BCLK) = 20 MHz)
125 kHz on-chip oscillator stopped
9.0 mA
125 kHz on-chip
oscillator mode Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator on, no division
FMR22 = 1 (slow read mode)
450.0 μA
Low-power mode f(BCLK) = 32 MHz
FMR 22 = FMR23 = 1 (in low-current
consumption read mode)
On flash memory (1)
80.0 μA
Wait mode f(BCLK) = 32 kHz
Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator on
PM25 = 1 (peripheral function clock fC operating)
Topr = 25°C
Real-time clock operating
5.3 μA
f(BCLK) = 32 MHz
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator stopped
PM25 = 0 (peripheral function clock fC stopped)
Topr = 25°C
5.0 μA
Stop mode Topr = 25°C2.2 μA
During flash
memory program f(BCLK) = 10 MHz, PM17 = 1 (one wait)
VCC1 = 3.0 V 20.0 mA
During flash
memory erase f(BCLK) = 10 MHz, PM17 = 1 (one wait)
VCC1 = 3.0 V 30.0 mA
R01DS0033EJ0220 Rev.2.20 Page 86 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
5.3.2 Timing Requirements (Peripheral Functions and Others)
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.2.1 Reset Input (RESET Input)
Figure 5.21 Reset Input (RESET Input)
5.3.2.2 External Clock Input
Note:
1. The condition is VCC1 = VCC2 = 2.7 to 3.0 V.
Figure 5.22 External Clock Input (XIN Input)
Table 5.43 Reset Input (RESET Input)
Symbol Parameter Standard Unit
Min. Max.
tw(RSTL) RESET input low pulse width 10 μs
Table 5.44 External Clock Input (XIN Input) (1)
Symbol Parameter Standard Unit
Min. Max.
tcExternal clock input cycle time 50 ns
tw(H) External clock input high pulse width 20 ns
tw(L) External clock input low pulse width 20 ns
trExternal clock rise time 9ns
tfExternal clock fall time 9ns
RESET input
t
w(RTSL)
XIN input
t
w(H)
t
r t
f t
w(L)
t
c
R01DS0033EJ0220 Rev.2.20 Page 87 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.2.3 Timer A Input
Figure 5.23 Timer A Input
Table 5.45 Timer A Input (Counter Input in Event Counter Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 150 ns
tw(TAH) TAiIN input high pulse width 60 ns
tw(TAL) TAiIN input low pulse width 60 ns
Table 5.46 Timer A Input (Gating Input in Timer Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 600 ns
tw(TAH) TAiIN input high pulse width 300 ns
tw(TAL) TAiIN input low pulse width 300 ns
Table 5.47 Timer A Input (External Trigger Input in One-Shot Timer Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 300 ns
tw(TAH) TAiIN input high pulse width 150 ns
tw(TAL) TAiIN input low pulse width 150 ns
Table 5.48 Timer A Input (External Trigger Input in Pulse Width Modulation Mode and
Programmable Output Mode)
Symbol Parameter Standard Unit
Min. Max.
tw(TAH) TAiIN input high pulse width 150 ns
tw(TAL) TAiIN input low pulse width 150 ns
TAiIN input
TAiOUT input
t
w(TAH)
t
c(TA)
t
w(TAL)
t
c(UP)
t
w(UPH)
t
w(UPL)
R01DS0033EJ0220 Rev.2.20 Page 88 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
Figure 5.24 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
Table 5.49 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
Symbol Parameter Standard Unit
Min. Max.
t
c(TA)
TAiIN input cycle time 2μs
t
su(TAIN-TAOUT)
TAiOUT input setup time 500 ns
t
su(TAOUT-TAIN)
TAiIN input setup time 500 ns
TAiIN input
Two-phase pulse input in event count er mode
TAiOUT input
t
c(TA)
t
su(TAIN-TA O UT) t
su(TAIN-TAOUT)
t
su(TAOUT-TAIN)
t
su(TAOUT-TAIN)
R01DS0033EJ0220 Rev.2.20 Page 89 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.2.4 Timer B Input
Figure 5.25 Timer B Input
Table 5.50 Timer B Input (Counter Input in Event Counter Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TB) TBiIN input cycle time (counted on one edge) 150 ns
tw(TBH) TBiIN input high pulse width (counted on one edge) 60 ns
tw(TBL) TBiIN input low pulse width (counted on one edge) 60 ns
tc(TB) TBiIN input cycle time (counted on both edges) 300 ns
tw(TBH) TBiIN input high pulse width (counted on both edges) 120 ns
tw(TBL) TBiIN input low pulse width (counted on both edges) 120 ns
Table 5.51 Timer B Input (Pulse Period Measurement Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TB) TBiIN input cycle time 600 ns
tw(TBH) TBiIN input high pulse width 300 ns
tw(TBL) TBiIN input low pulse width 300 ns
Table 5.52 Timer B Input (Pulse Width Measurement Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TB) TBiIN input cycle time 600 ns
tw(TBH) TBiIN input high pulse width 300 ns
tw(TBL) TBiIN input low pulse width 300 ns
TBiIN input
t
c(TB)
t
w(TBH)
t
w(TBL)
R01DS0033EJ0220 Rev.2.20 Page 90 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.2.5 Serial Interface
Figure 5.26 Seria l Interfac e
5.3.2.6 External Interrupt INTi Input
Figure 5.27 External Interrupt INTi Input
Table 5.53 Serial Interface
Symbol Parameter Standard Unit
Min. Max.
tc(CK) CLKi input cycle time 300 ns
tw(CKH) CLKi input high pulse width 150 ns
tw(CKL) CLKi input low pulse width 150 ns
td(C-Q) TXDi output delay time 160 ns
th(C-Q) TXDi hold time 0ns
tsu(D-C) RXDi input setup time 100 ns
th(C-D) RXDi input hold time 90 ns
Table 5.54 External Interrupt INTi Input
Symbol Parameter Standard Unit
Min. Max.
tw(INH) INTi input high pulse width 380 ns
tw(INL) INTi input low pulse width 380 ns
CLKi
TXDi
RXDi
t
c(CK)
t
w(CKH)
t
w(CKL) t
h(C-Q)
t
d(C-Q) t
su (D-C ) t
h(C-D)
INTi input
t
w(INL)
t
w(INH)
R01DS0033EJ0220 Rev.2.20 Page 91 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.2.7 Multi-master I2C-bus
Figure 5.28 Multi-master I2C-bus
Table 5.55 Multi-master I2C-bus
Symbol Parameter Standard Clock Mode Fast-mode Unit
Min. Max. Min. Max.
tBUF Bus free time 4.7 1.3 μs
tHD;STA Hold time in start condition 4.0 0.6 μs
tLOW Hold time in SCL clock 0 status 4.7 1.3 μs
tRSCL, SDA signals’ rising time 1000 20 + 0.1 Cb 300 ns
tHD;DAT Data hold time 000.9
μs
tHIGH Hold time in SCL clock 1 status 4.0 0.6 μs
fFSCL, SDA signals’ falling time 300 20 + 0.1 Cb 300 ns
tsu;DAT Data setup time 250 100 ns
tsu;STA Setup time in restart condition 4.7 0.6 μs
tsu;STO Stop condition setup time 4.0 0.6 μs
SDA
SCL p
ps Sr
t
LOW
t
HD;STA t
HD;DAT t
HIGH t
su;DAT t
su;STA
t
R t
F
t
HD;STA t
su;STO
t
BUF
R01DS0033EJ0220 Rev.2.20 Page 92 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Timing Requirements
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.3 Timing Requirements (Memory Expansion Mode and Microprocessor
Mode)
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
n is 1 for 1 wait setting, 2 for 2 waits setting and 3 for 3 waits setting.
3. Calculated according to the BCLK frequency as follows:
n is 2 for 2 waits setting, 3 for 3 waits setting.
4. Calculated according to the BCLK frequency as follows:
n is 3 for 2 φ + 3 φ, 4 for 2 φ + 4 φ, 4 for 3 φ + 4 φ, 5 for 4 φ + 5 φ,.
Table 5.56 Memory Exp ansion Mode and Microproces sor Mode
Symbol Parameter Standard Unit
Min. Max.
tac1(RD-DB) Data input access time (for setting with no wait) (Note 1) ns
tac2(RD-DB) Data input access time (for setting with wait) (Note 2) ns
tac3(RD-DB) Data input access time (when accessing multiplex bus area) (Note 3) ns
tac4(RD-DB) Data input access time (for setting with 2 φ + 3 φ or more) (Note 4) ns
tsu(DB-RD) Data input setup time 50 ns
tsu(RDY-BCLK)
RDY input setup time 85 ns
th(RD-DB) Data input hold time 0ns
th(BCLK-RDY) RDY input hold time 0ns
0.5 109
×
fBCLK()
----------------------60ns[]–
n0.5+()109
×
fBCLK()
------------------------------------ 60 ns[]–
n0.5–()109
×
fBCLK()
------------------------------------60ns[]–
n109
×
fBCLK()
------------------60ns[]–
R01DS0033EJ0220 Rev.2.20 Page 93 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.29 Timing Diagram
Memory Expansion Mode and Microprocessor Mode
(Effective in wait state setting)
RDY inpu t
RD
BCLK
(Separate bus)
(Multiplexed bus)
RD
(Separate bus)
(Multiplexed bus)
t
su(RDY-BCLK) t
h(BCLK-RDY)
Measuring conditi o ns
yV = V = 3 V
CC1 CC2
yInput timing voltage: V = 0.6 V, V = 2.4 V
IL IH
yOutput timing voltage: V = 1.5 V, V = 1.5 V
OL OH
V = V = 3 V
CC1 CC2
WR, WRL, WRH
WR, WRL, WRH
R01DS0033EJ0220 Rev.2.20 Page 94 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
5.3.4 Switching Characteristics (Memory Expansion Mode and Microprocessor
Mode)
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.4.1 In No Wait State Setting
Notes:
1. Calculated according to the BCLK frequency as follows:
f(BCLK) is 12.5 MHz or less.
2. Calculated according to the BCLK frequency as follows:
3. This standard value shows the timing when the output is off, and
does not show hold time of data bus.
Hold time of data bus varies with capacitor volume and pull-up
(pull-down) resistance value.
Hold time of data bus is expressed in
t = −CR × ln(1 − VOL/VCC2)
by a circuit of the right figure.
For example, when VOL = 0.2VCC2, C = 30 pF, R = 1 kΩ,
hold time of output low level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
Table 5.57 Memory Exp ansion and Microprocessor Modes (in No Wait State Setting )
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address out pu t del a y time
See
Figure 5.30
30 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address output hold time (in relation to RD) 0ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 30 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
td(BCLK-ALE) ALE signal output delay time 25 ns
th(BCLK-ALE) ALE signal output hold time −4ns
td(BCLK-RD) RD signal output delay time 30 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 30 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relati on to BCLK) (3) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
0.5 109
×
fBCLK()
----------------------40ns[]–
0.5 109
×
fBCLK()
----------------------10ns[]–
DBi
R
C
R01DS0033EJ0220 Rev.2.20 Page 95 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.30 Ports P0 to P10 Measurement Circuit
P6
P7
P8
P10
P9
P0
P1
P2
P3
P4
P5
30 pF
R01DS0033EJ0220 Rev.2.20 Page 96 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.31 Timing Diagram
BCLK
CSi
ADi
ALE
RD
30ns(max.)
0ns(min.)
Hi-Z
DBi
0ns(min.)
BHE
Read timing
Memory Expansion Mode and Microprocessor Mode
(in no wait state setting)
30ns(max.) 0ns(min.)
BCLK
CSi
ADi
ALE
BHE
0ns(min.)
DBi
Write timing
Hi-Z
1
f
(BCLK)
V = V = 3V
CC1 CC2
25ns(max.)
t
h(BCLK-CS)
t
cyc
t
h(BCLK-AD)
0ns(min.)
t
d(BCL K -AD)
t
d(BCLK-ALE) -4ns(min.) t
h(RD-AD)
0ns(min.)
t
d(BCLK-RD) t
h(BCLK-RD)
0ns(min.)
t
ac1(RD-DB)
(0.5×t -60)ns(max.)
cyc
t
su(DB-RD) t
h(RD-DB)
t
h(BCLK-ALE)
30ns(max.)
t
d(BCLK-CS)
30ns(max.)
t
d(BCLK-CS)
30ns(max.) 0ns(min.)
t
h(BCLK-CS)
t
cyc
30ns(max.) 0ns(min.)
25ns(max.)
t
d(BCLK-ALE) -4ns(min.)
t
h(BCLK-ALE)
t
d(BCL K -AD) t
h(BCLK-AD)
t
h(WR-AD)
(0.5×t -10)ns(min.)
cyc
t
d(BCLK-WR) t
h(BCLK-WR)
t
d(BCLK-DB) t
h(BCLK-DB)
t
d(DB-WR)
(0.5×t -40)ns(min.)
cyc t
h(WR-DB)
(0.5×t -10)ns(min.)
cyc
t =
cyc
40ns(max.)
Measuring conditions
yV = V = 3V
CC1 CC2
yInput timing voltage: V = 0.6 V, V = 2.4 V
IL IH
yOutput timing voltage: V = 1.5 V, V = 1.5 V
OL OH
50ns(min.)
WR, WRL,
WRH
R01DS0033EJ0220 Rev.2.20 Page 97 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Switching Characteristics
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.4.2 In 1 to 3 Waits Setting and When Accessing External Area
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
3. This standard value shows the timing when the output is off,
and does not show hold time of data bus.
Hold time of data bus varies with capacitor volume and pull-up
(pull-down) resistance value.
Hold time of data bus is expressed in
t = −CR × ln(1−VOL/VCC2)
by a circuit of the right figure.
For example, when VOL = 0. 2VCC2, C = 30 p F, R = 1 kΩ, hold
time of output low level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
Table 5.58 Memory Expansion Mode and Microprocessor Mode (in 1 to 3 Waits Settin g and When
Accessing External Area)
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address out pu t del a y time
See
Figure 5.30
30 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address output hold time (in relation to RD) 0ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 30 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
td(BCLK-ALE) ALE signal output delay time 25 ns
th(BCLK-ALE) ALE signal output hold time -4 ns
td(BCLK-RD) RD signal output delay time 30 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 30 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relati on to BCLK) (3) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
n is 1 for 1 wait setting, 2 for 2 waits setting and 3 for 3 waits setting.
When n = 1, f(BCLK) is 12.5 MHz or less.
n0.5–()109
×
fBCLK()
------------------------------------40ns[]–
0.5 109
×
fBCLK()
----------------------10ns[]–
DBi
R
C
R01DS0033EJ0220 Rev.2.20 Page 98 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.32 Timing Diagram
BCLK
CSi
ADi
ALE
RD
Hi-Z
DBi
BHE
Read timing
BCLK
CSi
ADi
ALE
BHE
DBi
Write timing
Hi-Z
Memory Expansion Mode and Microprocessor Mode
(in 1 to 3 waits setting and when accessing external area)
1
V = V = 3V
CC1 CC2
t
d(BCLK-CS)
30ns(max.)
0ns(min.)
t
cyc
t
h(BCLK-AD)
t
d(BCLK-AD)
30ns(max.)
t
d(BCLK-ALE)
25ns(max.)
0ns(min.)
t
h(BCLK-CS)
-4ns(min.)
t
h(BCLK-ALE) 0ns(min.)
t
h(RD-AD)
t
d(BCLK-RD)
30ns(max.) 0ns(min.)
t
h(BCLK-RD)
t
su(DB-RD) 0ns(min.)
t
h(RD-DB)
t
d(BCLK-CS)
30ns(max.) 0ns(min.)
t
h(BCLK-CS)
t
cyc
t
d(BCLK-AD)
30ns(max.) 0ns(min.)
t
h(BCLK-AD)
t
d(BCLK-ALE)
25ns(max.) -4ns(min.)
t
h(BCLK-ALE)
(0.5× t -10)ns(min.)
cyc
t
h(WR-AD)
t
d(BCLK-WR)
30ns(max.) 0ns(min.)
t
h(BCLK-WR)
t
d(BCLK-DB)
40ns(max.) 0ns(min.)
t
h(WR-DB)
t
d(DB-WR)
{(n-0.5)× t -40}ns(min.)
cyc (0.5 ×t -10)ns(min.)
cyc
t =
cyc
t
h(BCLK-DB)
n: 1 (when 1 wait)
2 (when 2 waits)
3 (when 3 waits)
Measuring conditions
yV = V = 3V
CC1 CC2
yInput timing voltage: V = 0.6 V, V = 2.4 V
IL IH
yOutput timing voltage: V = 1.5 V, V = 1.5 V
OL OH
f
(BCLK)
{(n+0.5)× t -60}ns(max.)
cyc
t
ac2(RD-DB)
50ns(min.)
WR, WRL,
WRH
R01DS0033EJ0220 Rev.2.20 Page 99 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Switching Characteristics
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.4.3 In 2 or 3 Waits Setting, and When Accessing External Area and Using
Multiplexed Bus
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
n is 2 for 2 waits setting, 3 for 3 waits setting.
3. Calculated according to the BCLK frequency as follows:
4. Calculated according to the BCLK frequency as follows:
5. When using multiplexed bus, set f(BCLK) 12.5 MHz or less.
Table 5.59 Memory Exp ansion Mode an d Microprocessor Mode (in 2 or 3 W aits Setting, and When
Accessing External Area and Using Multiplexed Bus) (5)
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address output delay time
See
Figure 5.30
50 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address output hold time (in relation to RD) (Note 1) ns
th(WR-AD) Address output hold time (in relation to WR) (Note 1) ns
td(BCLK-CS) Chip select output delay time 50 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
th(RD-CS) Chip select output hold time (in relation to RD) (Note 1) ns
th(WR-CS) Chip select output hold time (in relation to WR) (Note 1) ns
td(BCLK-RD) RD signal output delay time 40 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 40 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 50 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 2) ns
th(WR-DB) Data output hold time (in relation to WR) (Note 1) ns
td(BCLK-ALE) ALE signal output delay time (in relation to BCLK) 25 ns
th(BCLK-ALE) ALE signal output hold time (in relation to BCLK) −4ns
td(AD-ALE) ALE signal output delay time (in relation to Address) (Note 3) ns
th(AD-ALE) ALE signal output hold time (in relation to Address) (Note 4) ns
td(AD-RD) RD signal output delay from the end of address 0ns
td(AD-WR) WR signal output delay from the end of address 0ns
tdz(RD-AD) Address output floating start time 8ns
0.5 109
×
fBCLK()
----------------------10ns[]–
n0.5–()109
×
fBCLK()
------------------------------------50ns[]–
0.5 109
×
fBCLK()
----------------------40ns[]–
0.5 109
×
fBCLK()
----------------------15ns[]–
R01DS0033EJ0220 Rev.2.20 Page 100 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.33 Timing Diagram
Memory Expansion Mode and Microprocessor Mode
(in 2 or 3 waits setting, and when accessing external area and using multiplexed bus)
BCLK
CSi
ADi
ALE
RD
BHE
ADi
/DBi
Read timing
BCLK
CSi
ADi
ALE
BHE
ADi
/DBi Data output
Write timing
Address
Address
Data input
Address
Address
V = V = 3V
CC1 CC2
t
d(BCLK-CS)
50ns(max.) t
cyc (0.5 ×t -10)ns(min.)
cyc
t
h(RD-CS) t
h(BCLK-CS)
0ns(min.)
(0.5 ×t -40ns(min.)
cyc
t
d(AD-ALE) (0.5× t -15ns(min.)
cyc
t
h(ALE- AD)
t
dz(RD-A D)
8ns(max.)
{(n-0.5)×t -60}ns(max.)
cyc
t
ac3(RD-DB) t
su(DB-RD) t
h(RD-DB)
0ns(min.)
0ns(min.)
t
d(AD-RD) t
h(BCLK-AD)
0ns(min.)
25ns(max.)
t
d(BCLK-ALE) t
h(BCLK-ALE)
-4ns(min.)
t
d(BCLK-AD)
50ns(max.)
t
h(RD-AD)
(0.5 ×t -10)ns(min.)
cyc
40ns(max.)
t
d(BCLK- RD) 0ns(min.)
t
h(BCLK-RD)
t
cyc
t
d(BCLK-CS)
50ns(max.) (0.5 ×t -10)ns(min.)
cyc
t
h(WR-CS) t
h(BCLK-CS)
0ns(min.)
t
d(BCLK - DB)
50ns(max.) t
h(BCLK-DB)
0ns(min.)
(0.5×t -40ns(min.)
cyc
t
d(AD-ALE) {(n-0.5)× t -50}ns(min.)
cyc
t
d(DB-WR) (0.5 × t -10)ns(min.)
cyc
t
h(WR-DB)
t
d(BCLK-AD)
50ns(max.) t
h(BCLK-AD)
0ns(min.)
25ns(max.)
t
d(BCLK-ALE) t
h(BCLK-ALE)
-4ns(min.) 0ns(min.)
t
d(AD-WR) t
h(WR-AD)
(0.5×t -10)ns(min.)
cyc
40ns(max.)
t
d(BCLK-WR) 0ns(min.)
t
h(BCLK-WR)
n: 2 (when 2 waits)
3 (when 3 waits)
Measuring conditions
yV = V = 3V
CC1 CC2
yInput timing voltage: V = 0.6 V, V = 2.4 V
IL IH
yOutput timing voltage: V = 1.5 V, V = 1.5 V
OL OH
1
t =
cyc f
(BCLK)
50ns(min.)
WR, WRL,
WRH
R01DS0033EJ0220 Rev.2.20 Page 101 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Switching Characteristics
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.4.4 In Wait State Setting 2φ + 3φ, 2φ + 4φ, 3φ + 4φ, and 4φ + 5φ, and When
Accessing External Area
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
3. This standard value shows the timing when the output is
off, an d do es not sh ow ho ld time of data bus.
Hold time of data bus varies with capacitor volume and pull-
up (pull-down) resistance value.
Hold time of data bus is expressed in
t = −CR × ln(1 − VOL/VCC2)
by a circuit of the right figure.
For example, when VOL = 0.2VCC2, C = 30 pF, R = 1 kΩ,
hold time of output l ow level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
Table 5.60 Memory Exp ansion and Microprocessor Modes (in Wait State Setting 2φ + 3φ, 2φ + 4φ,
3φ + 4φ, and 4φ + 5φ, and When Accessing External Area)
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address output delay time
See
Figure 5.30
30 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address outpu t hold time (in relation to RD) 0ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 30 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
td(BCLK-ALE) ALE signal output delay time 25 ns
th(BCLK-ALE) ALE signal output hold time -4 ns
td(BCLK-RD) RD signal output delay time 30 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 30 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
n0.5–()109
×
fBCLK()
------------------------------------40ns[]–
n is 3 for 2φ + 3φ, 4 for 2φ + 4φ, 4 for 3φ + 4φ, and 5 for 4φ + 5φ.
0.5 109
×
fBCLK()
----------------------10ns[]–
DBi
R
C
R01DS0033EJ0220 Rev.2.20 Page 102 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.34 Timing Diagram
Read timing
Write timing
BCLK
CSi
ALE
DBi
ADi
BHE
WR, WRL
WRH
BCLK
CSi
ALE
DBi
ADi
BHE
RD
t
cyc
t
d(BCLK-CS)
30ns(max.)
t
d(BCLK-AD)
30ns(max.)
t
d(BCLK-ALE)
25ns(max.) th(BCLK-ALE)
-4ns(min.)
t
d(BCLK-RD)
30ns(max.)
Hi-Z t
su(DB-RD)
Hi-Z
t
d(BCLK-CS)
30ns(max.)
t
d(BCLK-AD)
30ns(max.)
t
d(BCLK-ALE)
25ns(max.)
t
d(BCLK-WR)
30ns(max.)
(0.5 × t -10)ns(min.)
cyc
t
ac4(RD-DB)
(n × t -60)ns(max.)
cyc
V = V = 3V
CC1 CC2
Memory Expansion Mode, Microprocessor Mode
(in wait state setting 2 φ + 3 φ, 2 φ + 4 φ, 3φ + 4 φ, and 4 φ + 5 φ, and
when accessing external area)
n: 3 (when 2 φ + 3 φ)
4 (when 2 φ + 4 φ or 3 φ + 4 φ)
5 (when 4 φ + 5 φ)
th(BCLK-AD)
0ns(min.)
th(BCLK-CS)
0ns(min.)
th(RD-AD)
0ns(min.)
th(BCLK-RD)
0ns(min.)
th(RD-DB)
0ns(min.)
th(BCLK-CS)
0ns(min.)
th(BCLK-AD)
0ns(min.)
th(BCLK-ALE)
-4ns(min.) th(WR-AD)
th(BCLK-WR)
0ns(min.)
t
d(DB-WR)
th(BCLK-DB)
0ns(min.)
{(n-0.5) × t -40}ns(min.)
cyc
th(WR-DB)
(0.5 × t -10)ns(min.)
cyc
Measuring conditions
yV = V = 3V
CC1 CC2
yInput timi ng voltage: V = 0.6 V, V = 2.4 V
IL IH
yOutput timing voltage: V = 1.5 V, V = 1.5 V
OL OH
t
cyc = 1
f(BCLK)
t
cyc
td(BCLK-DB)
40ns(max.)
50ns(min.)
R01DS0033EJ0220 Rev.2.20 Page 103 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 3 V
Switching Characteristics
(VCC1 = VCC2 = 3 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.3.4.5 In Wait State Setting 2φ + 3φ, 2φ + 4φ, 3φ + 4φ, and 4φ + 5φ, and Inserting 1
to 3 Recovery Cycles and Accessing External Area
Notes:
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
3. This standard value shows the timing when the output is off, and
does not show hold time of data bus.
Hold time of data bus varies with capacitor volume and pull-up
(pull-down) resistance value.
Hold time of data bus is expressed in
t = −CR × ln(1 − VOL/VCC2)
by a circuit of the right figure.
For example, when VOL = 0.2VCC2, C = 30 pF, R = 1 kΩ, hold time
of output low level is
t = −30 pF × 1 kΩ × In(1 − 0.2VCC2/VCC2)
= 6.7 ns.
4. Calculated according to the BCLK frequency as follows:
Table 5.61 Memory Exp ansion Mode and Microprocesso r Mode (in Wait St ate Setting 2 φ + 3φ, 2φ +
4φ, 3φ + 4φ, and 4φ + 5φ, and Inserting 1 to 3 Recovery Cycles and Accessing External
Area)
Symbol Parameter Measuring
Condition Standard Unit
Min. Max.
td(BCLK-AD) Address output delay time
See
Figure 5.30
30 ns
th(BCLK-AD) Address output hold time (in relation to BCLK) 0ns
th(RD-AD) Address output hold time (in relation to RD) (Note 4) ns
th(WR-AD) Address output hold time (in relation to WR) (Note 2) ns
td(BCLK-CS) Chip select output delay time 30 ns
th(BCLK-CS) Chip select output hold time (in relation to BCLK) 0ns
td(BCLK-ALE) ALE signal output delay time 25 ns
th(BCLK-ALE) ALE signal output hold time -4 ns
td(BCLK-RD) RD signal output delay time 30 ns
th(BCLK-RD) RD signal output hold time 0ns
td(BCLK-WR) WR signal output delay time 30 ns
th(BCLK-WR) WR signal output hold time 0ns
td(BCLK-DB) Data output delay time (in relation to BCLK) 40 ns
th(BCLK-DB) Data output hold time (in relation to BCLK) (3) 0ns
td(DB-WR) Data output delay time (in relation to WR) (Note 1) ns
th(WR-DB) Data output hold time (in relation to WR) (3) (Note 2) ns
n109
×
fBCLK()
------------------40ns[]–
n is 3 for 2φ + 3φ, 4 for 2φ + 4φ, 4 for 3φ + 4φ, and 5 for 4φ + 5φ.
m109
×
fBCLK()
-------------------10ns[]–
m is 1 when 1 recovery cycle is inserted, 2 when 2 recovery cycles are inserted, and
3 when 3 recovery cycles are inserted.
DBi
R
C
m109
×
fBCLK()
-------------------0ns[]+
m is 1 when 1 recovery cycle is inserted, 2 when 2 recovery cycles are inserted, and
3 when 3 recovery cycles are inserted.
R01DS0033EJ0220 Rev.2.20 Page 104 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
Figure 5.35 Timing Diagram
Read timing
Write timing
BCLK
CSi
ALE
DBi
ADi
BHE
WR, WRL
WRH
BCLK
CSi
ALE
DBi
ADi
BHE
RD
t
cyc
t
d(BCLK-CS)
30ns(max.)
Hi-Z t
su(DB-RD)
Hi-Z
V = V = 3V
CC1 CC2
Memory Expansion Mode and Microprocessor Mode
(in wait state setting 2 φ + 3 φ, 2 φ + 4 φ, 3φ + 4 φ, and 4 φ + 5 φ, and
when inserting 1 to 3 recovery cycles inserted and accessing external area)
n: 3 (when 2 φ + 3 φ)
4 (when 2 φ + 4 φ or 3 φ + 4 φ)
5 (when 4 φ + 5 φ)
th(BCLK-CS)
0ns(min.)
t
d(BCLK-AD)
30ns(max.) th(BCLK-AD)
0ns(min.)
t
d(BCLK-ALE)
25ns(max.) th(BCLK-ALE)
-4ns(min.)
t
d(BCLK-RD)
30ns(max.) th(BCLK-RD)
0ns(min.)
th(RD-DB)
0ns(min.)
t
cyc
t
d(BCLK-CS)
30ns(max.)
t
d(BCLK-AD)
30ns(max.)
th(BCLK-ALE)
-4ns(min.)
t
d(BCLK-ALE)
25ns(max.)
t
d(BCLK-WR)
30ns(max.)
t
d(BCLK-DB)
40ns(max.)
th(BCLK-CS)
0ns(min.)
th(BCLK-AD)
0ns(min.)
th(WR-AD)
(m × t -10)ns(min.)
cyc
th(BCLK-WR)
0ns(min.)
th(BCLK-DB)
0ns(min.)
th(WR-DB)
(m × t -10)ns(min.)
cyc
(n × t -60)ns(max.)
cyc
t
ac4(RD-DB)
(n × t -40)ns(min.)
cyc
t
d(DB-WR)
t
cyc = 1
f(BCLK)
m: 1 (when 1 recovery cycle inserted )
2 (when 2 recovery cycles inserted)
3 (when 3 recovery cycles inserted)
Measuring condi t ions
yV = V = 3V
CC1 CC2
yInput timi ng voltage: V = 0.6 V, V = 2.4 V
IL IH
yOutput timing voltage: V = 1.5 V, V = 1.5 V
OL OH
th(RD-AD)
(m × t +0)ns(min.)
cyc
50ns(min.)
R01DS0033EJ0220 Rev.2.20 Page 105 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
5.4 Electrical Characteristics (VCC1 = VCC2 = 1.8 V)
5.4.1 Electrical Characteristics VCC1 = VCC2 = 1.8 V
Note:
1. When VCC1 ≠ VCC2, refer to 5 V, 3 V, or 1.8 V standard depending on the voltage.
Table 5.62 Electrical Characteristics (1) (1)
1.8 V ≤ VCC1 = VCC2 < 2.7 V, VSS = 0 V at Topr = -20°C to 85°C/-40°C to 85 °C, f(BCLK) = 5 MHz unless otherwise
specified.
Symbol Parameter Measuring Condition Standard Unit
Min. Typ. Max.
VOH High
output
voltage
P6_0 to P6_7, P7_2 to P7_7,
P8_0 to P8_4, P8_6, P8_7,
P9_0 to P9_7, P10_0 to P10_7
IOH = −1 mA VCC1 − 0.5 VCC1 V
P0_0 to P0_7, P1_0 to P1_7,
P2_0 to P2_7, P3_0 to P3_7,
P4_0 to P4_7, P5_0 to P5_7
IOH = −1 mA VCC2 − 0.5 VCC2
VOH High output voltage XOUT HIGHPOWER IOH = −0.1 mA VCC1 − 0.5 VCC1 V
LOWPOWER IOH = −50 μAV
CC1 − 0.5 VCC1
High output voltage XCOUT With no load applied 1.5 V
VOL Low output
voltage P6_0 to P6_7, P7_0 to P7_7,
P8_0 to P8_7, P9_0 to P9_7,
P10_0 to P10_7
IOL = 1 mA 0.5 V
P0_0 to P0_7, P1_0 to P1_7,
P2_0 to P2_7, P3_0 to P3_7,
P4_0 to P4_7, P5_0 to P5_7
IOL = 1 mA 0.5
VOL Low output voltage XOUT HIGHPOWER IOL = 0.1 mA 0.5 V
LOWPOWER IOL = 50 μA0.5
Low output voltage XCOUT With no load applied 0 V
VT+-VT- Hysteresis HOLD, RDY, TA0IN to TA4IN,
TB0IN to TB5IN, INT0 to INT7, NMI,
ADTRG, CTS0 to CTS2, CTS5 to CTS7,
SCL0 to SCL2, SCL5 to SCL7,
SDA0 to SDA2, SDA5 to SDA7,
CLK0 to CLK7, TA0OUT to TA4OUT,
KI0 to KI7, RXD0 to RXD2,
RXD5 to RXD7, SIN3, SIN4, SD, PMC0,
PMC1,
SCLMM, SDAMM, CEC
VCC1 = VCC2 = 1.8 V 0.02 0.1 V
VT+-VT- Hysteresis RESET VCC1 = VCC2 = 1.8 V 0.05 0.15 V
IIH High input
current P0_0 to P0_7, P1_0 to P1_7,
P2_0 to P2_7, P3_0 to P3_7,
P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7,
P8_0 to P8_7, P9_0 to P9_7,
P10_0 to P10_7
XIN, RESET, CNVSS, BYTE
VI = 1.8 V 2.0 μA
R01DS0033EJ0220 Rev.2.20 Page 106 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 1.8 V
Note:
1. When VCC1 ≠ VCC2, refer to 5 V, 3 V, or 1.8 V standard depending on the voltage.
Table 5.63 Electrical Characteristics (2) (1)
1.8 V ≤ VCC1 = VCC2 < 2.7 V, VSS = 0 V at Topr = −20 to 85°C/−40 to 85°C, f(BCLK) = 5 MHz unless otherwise
specified.
Symbol Parameter Measuring Condition Standard Unit
Min. Typ. Max.
IIL Low input
current P0_0 to P0_7, P1_0 to P1_7,
P2_0 to P2_7, P3_0 to P3_7,
P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_0 to P7_7,
P8_0 to P8_7, P9_0 to P9_7,
P10_0 to P10_7
XIN, RESET, CNVSS, BYTE
VI = 0 V −2.0 μA
RPULLUP Pull-up
resistance P0_0 to P0_7, P1_0 to P1_7,
P2_0 to P2_7, P3_0 to P3_7,
P4_0 to P4_7, P5_0 to P5_7,
P6_0 to P6_7, P7_2 to P7_7,
P8_0 to P8_4, P8_6, P8_7 ,
P9_0 to P9_7, P10_0 to P10_7
VI = 0 V 70 140 700 kΩ
RfXIN Feedback resistance XIN 0.8 MΩ
RfXCIN Feedback resistance XCIN 8 MΩ
VRAM RAM retention voltage 1.8 V
R01DS0033EJ0220 Rev.2.20 Page 107 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 1.8 V
Notes:
1. This indicates the memory in which the program to be executed exists
2. A/D conversion is executed in repeat mode.
Table 5.64 Electrical Characteristics (3)
1.8 V ≤ VCC1 = VCC2 < 2.7 V, VSS = 0 V at Topr = −20°C to 85°C/−40°C to 85°C, f(BCLK) = 5 MHz unless otherwise
specified.
Symbol Parameter Measuring Condition Standard Unit
Min. Typ. Max.
ICC Power supply current
In single-chip, mode,
the output pin are
open and other pins
are VSS
High-speed mode f(BCLK) = 5 MHz (no division)
XIN = 5 MHz (square wave),
125 kHz on-chip oscillator stop
CM15 = 1 (drive capacity High)
A/D converter stop
2.6 mA
f(BCLK) = 5 MHz (no division),
XIN = 5 MHz (square wave)
125 kHz on-chip oscillator stop
CM15 = 1 (drive capacity High)
A/D converter operating (2)
3.3 mA
f(BCLK) = 5 MHz
XIN = 5 MHz (square wave)
125 kHz on-chip oscillator stop
CM15 = 0 (drive capacity Low)
A/D converter stop
2.6 mA
f(BCLK) = 5 MHz (no division)
XIN = 5 MHz (square wave)
125 kHz on-chip oscillator stop
CM15 = 1 (drive capacity High)
PCLKSTP1 = FF (peripheral clock stop)
2.2 mA
f(BCLK) = 5 MHz (no division)
XIN = 5 MHz (square wave)
125 kHz on-chip oscillator stop
CM15 = 0 (drive capacity Low)
PCLKSTP1 = FF (peripheral clock stop)
2.2 mA
40 MHz on-chip
oscillator mode Main clock stop
40 MHz on-chip oscillator on,
divide-by-8 (f(BCLK) = 5 MHz)
125 kHz on-chip oscillator stop
2.8 mA
125 kHz on-chip
oscillator mode Main clock stop
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator on, no division
FMR22 = 1 (slow read mode)
450.0 μA
Low-power mode f(BCLK) = 32 MHz
FMR 22 = FMR23 = 1 (in low-c urrent
consumption read mode)
on flash memory (1)
80.0 μA
Wait mode f(BCLK) = 32 kHz
Main clock stop
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator on
PM25 = 1 (peripheral function clock fC
operating)
Topr = 25°C
Real-time clock operating
5.3 μA
f(BCLK) = 32 MHz
Main clock stop
40 MHz on-chip oscillator stop
125 kHz on-chip oscillator stop
PM25 = 0 (peripheral function clock fC stop)
Topr = 25°C
5.0 μA
Stop mode Topr = 25°C2.2 μA
R01DS0033EJ0220 Rev.2.20 Page 108 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 1.8 V
5.4.2 Timing Requirements (Peripheral Functions and Others)
(VCC1 = VCC2 = 1.8 V, VSS = 0 V, at Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified)
5.4.2.1 Reset Input (RESET Input)
Figure 5.36 Reset Input (RESET Input)
5.4.2.2 External Clock Input
Note:
1. The condition is 1.8 V ≤ VCC1 = VCC2 < 2.7 V.
Figure 5.37 External Clock Input (XIN Input)
Table 5.65 Reset Input (RESET Input)
Symbol Parameter Standard Unit
Min. Max.
tw(RSTL) RESET input low pulse width 10 μs
Table 5.66 External Clock Input (XIN Input) (1)
Symbol Parameter Standard Unit
Min. Max.
tcExternal clock input cycle time 100 ns
tw(H) External clock input high pulse width 40 ns
tw(L) External clock input low pulse width 40 ns
trExternal clock rise time 9ns
tfExternal clock fall time 9ns
RESET input
t
w(RTSL)
XIN input
t
w(H)
t
r t
f t
w(L)
t
c
R01DS0033EJ0220 Rev.2.20 Page 109 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 1.8 V
Timing Requirements
(VCC1 = VCC2 = 1.8 V, VSS = 0 V, at Topr = -20°C to 85 °C/-40°C to 85°C unless otherwise specified)
5.4.2.3 Timer A Input
Figure 5.38 Timer A Input
Table 5.67 Timer A Input (Counter Input in Event Counter Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 500 ns
tw(TAH) TAiIN input high pulse width 200 ns
tw(TAL) TAiIN input low pulse width 200 ns
Table 5.68 Timer A Input (Gating Input in Timer Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 1000 ns
tw(TAH) TAiIN input high pulse width 500 ns
tw(TAL) TAiIN input low pulse width 500 ns
Table 5.69 Timer A Input (External Trigger Input in One-Shot Timer Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TA) TAiIN input cycle time 800 ns
tw(TAH) TAiIN input high pulse width 400 ns
tw(TAL) TAiIN input low pulse width 400 ns
Table 5.70 Timer A Input (External Trigger Input in Pulse Width Modulation Mode and
Programmable Output Mode)
Symbol Parameter Standard Unit
Min. Max.
tw(TAH) TAiIN input high pulse width 400 ns
tw(TAL) TAiIN input low pulse width 400 ns
TAiIN input
TAiOUT input
t
w(TAH)
t
c(TA)
t
w(TAL)
t
c(UP)
t
w(UPH)
t
w(UPL)
R01DS0033EJ0220 Rev.2.20 Page 110 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 1.8 V
Timing Requirements
(VCC1 = VCC2 = 1.8 V, VSS = 0 V, at Topr = -20°C to 85 °C/-40°C to 85°C unless otherwise specified)
Figure 5.39 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
Table 5.71 Timer A Input (Two-Phase Pulse Input in Event Counter Mode)
Symbol Parameter Standard Unit
Min. Max.
t
c(TA)
TAiIN input cycle time 3μs
t
su(TAIN-TAOUT)
TAiOUT input setup time 800 ns
t
su(TAOUT-TAIN)
TAiIN input setup time 800 ns
TAiIN input
Two-phase pulse input in event counter mode
TAiOUT input
t
c(TA)
t
su(TAIN-TA O UT) t
su(TAIN-TAOUT)
t
su(TAOUT-TAIN)
t
su(TAOUT-TAIN)
R01DS0033EJ0220 Rev.2.20 Page 111 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 1.8 V
Timing Requirements
(VCC1 = VCC2 = 1.8 V, VSS = 0 V, at Topr = -20°C to 85 °C/-40°C to 85°C unless otherwise specified)
5.4.2.4 Timer B Input
Figure 5.40 Timer B Input
Table 5.72 Timer B Input (Counter Input in Event Counter Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TB) TBiIN input cycle time (counted on one edge) 300 ns
tw(TBH) TBiIN input high pulse width (counted on one edge) 120 ns
tw(TBL) TBiIN input low pulse width (counted on one edge) 120 ns
tc(TB) TBiIN input cycle time (counted on both edges) 600 ns
tw(TBH) TBiIN input high pulse width (counted on both edges) 240 ns
tw(TBL) TBiIN input low pulse width (counted on both edges) 240 ns
Table 5.73 Timer B Input (Pulse Period Measurement Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TB) TBiIN input cycle time 1000 ns
tw(TBH) TBiIN input high pulse width 500 ns
tw(TBL) TBiIN input low pulse width 500 ns
Table 5.74 Timer B Input (Pulse Width Measurement Mode)
Symbol Parameter Standard Unit
Min. Max.
tc(TB) TBiIN input cycle time 1000 ns
tw(TBH) TBiIN input high pulse width 500 ns
tw(TBL) TBiIN input low pulse width 500 ns
TBiIN input
t
c(TB)
t
w(TBH)
t
w(TBL)
R01DS0033EJ0220 Rev.2.20 Page 112 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 1.8 V
Timing Requirements
(VCC1 = VCC2 = 1.8 V, VSS = 0 V, at Topr = -20°C to 85 °C/-40°C to 85°C unless otherwise specified)
5.4.2.5 Serial Interface
Figure 5.41 Seria l Interfac e
5.4.2.6 External Interrupt INTi Input
Figure 5.42 External Interrupt INTi Input
Table 5.75 Serial Interface
Symbol Parameter Standard Unit
Min. Max.
tc(CK) CLKi input cycle time 800 ns
tw(CKH) CLKi input high pulse width 400 ns
tw(CKL) CLKi input low pulse width 400 ns
td(C-Q) TXDi output delay time 240 ns
th(C-Q) TXDi hold time 0ns
tsu(D-C) RXDi input setup time 200 ns
th(C-D) RXDi input hold time 90 ns
Table 5.76 External Interrupt INTi Input
Symbol Parameter Standard Unit
Min. Max.
tw(INH) INTi input high pulse width 1000 ns
tw(INL) INTi input low pulse width 1000 ns
tr(INT) INTi input rising time 100 μs
tf(INT) INTi input falling time 100 μs
CLKi
TXDi
RXDi
t
c(CK)
t
w(CKH)
t
w(CKL) t
h(C-Q)
t
d(C-Q) t
su (D-C ) t
h(C-D)
INTi input
t
w(INL)
t
w(INH)
R01DS0033EJ0220 Rev.2.20 Page 113 of 115
Nov 01, 2012
M16C/63 Group 5. Electrical Characteristics
VCC1 = VCC2 = 1.8 V
Timing Requirements
(VCC1 = VCC2 = 1.8 V, VSS = 0 V, at Topr = -20°C to 85 °C/-40°C to 85°C unless otherwise specified)
5.4.2.7 Multi-master I2C-bus
Figure 5.43 Multi-master I2C-bus
Table 5.77 Multi-master I2C-bus
Symbol Parameter Standard Clock Mode Fast-mode Unit
Min. Max. Min. Max.
tBUF Bus free time 4.7 1.3 μs
tHD;STA Hold time in start condition 4.0 0.6 μs
tLOW Hold time in SCL clock 0 status 4.7 1.3 μs
tRSCL, SDA signals’ rising time 1000 20 + 0.1 Cb 300 ns
tHD;DAT Data hold time 000.9
μs
tHIGH Hold time in SCL clock 1 status 4.0 0.6 μs
fFSCL, SDA signals’ falling time 300 20 + 0.1 Cb 300 ns
tsu;DAT Data setup time 250 100 ns
tsu;STA Setup time in restart condition 4.7 0.6 μs
tsu;STO Stop condition setup time 4.0 0.6 μs
SDA
SCL p
ps Sr
t
LOW
t
HD;STA t
HD;DAT t
HIGH t
su;DAT t
su;STA
t
R t
F
t
HD;STA t
su;STO
t
BUF
R01DS0033EJ0220 Rev.2.20 Page 114 of 115
Nov 01, 2012
M16C/63 Group Appendix 1. Package Dimensions
Appendix 1. Package Dimensions
The information on the latest package dimensions or packaging may be obtained from “Packages“ on the
Renesas Electronics we bsit e.
P-QFP100-14x20-0.65 1.8g
MASS[Typ.]
100P6F-APRQP0100JD-B
RENESAS CodeJEITA Package Code Previous Code
0.2
0.150.13 0.40.3
0.25
MaxNomMin
Dimension in Millimeters
Symbol
Reference
20.220.019.8
D14.214.013.8
E2.8
A
2
23.122.822.5 17.116.816.5 3.05
A0.20.1
0
0.80.60.4
L
10°0°
c
0.65
e
0.10
y
H
D
H
E
A
1
b
p
Z
D
Z
E
0.575
0.825
x0.13
2.
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
NOTE)
DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Detail F
L
A2
A1
*3
*1
*2
F
130
31
50
51
80
81
100
Index mark
yx
c
HE
E
D
HD
A
bp
ZD
ZE
e
Terminal cross section
b
1
c
1
b
p
c
2.
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
NOTE)
DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
y
Index mark
x
125
26
50
51
75
76
100
F
*1
*3
*2
Z
E
Z
D
E
D
H
D
H
E
b
p
Detail F
L
1
A
2
A
1
L
A
c
L
1
Z
E
Z
D
c
1
b
1
b
p
A
1
H
E
H
D
y0.08
e0.5
c
0° 8°
x
L0.35 0.5 0.65
0.05 0.1 0.15
A1.7
15.8 16.0 16.2
15.8 16.0 16.2
A
2
1.4
E13.9 14.0 14.1
D13.9 14.0 14.1
Reference
Symbol
Dimension in Millimeters
Min Nom Max
0.15 0.20 0.25
0.09 0.145 0.20
0.08
1.0
1.0
0.18
0.125
1.0
Previous CodeJEITA Package Code RENESAS Code
PLQP0100KB-A 100P6Q-A / FP-100U / FP-100UV MASS[Typ.]
0.6gP-LQFP100-14x14-0.50
e
R01DS0033EJ0220 Rev.2.20 Page 115 of 115
Nov 01, 2012
M16C/63 Group Appendix 1. Package Dimensions
109
K
J
A
H
G
F
E
D
C
B
12345678
S
B
A
S
yS
AB
Index mark
SAB
v
x4
(Laser mark)
Index mark
S
A
wS
wB
D
E
A
b1
b
0.290.250.21
b
b1
y0.10
e0.5
ZD0.5
ZE0.5
x
A1.05
E5.5
D5.5
Reference
Symbol Dimension in Millimeters
Min Nom Max
0.29 0.34 0.39
0.08
P-TFLGA100-5.5x5.5-0.5 0.1g
MASS[Typ.]
100F0MPTLG0100KA-A
RENESAS CodeJEITA Package Code Previous Code
w0.20
v0.15
e
ZD
e
ZE
Detail F
c
A
L1
L
A1A2
Index mark
y
*2
*1
*3
F
80
61
60 41
40
21
20
1
x
ZE
ZD
E
HE
D
HD
ebp
2.
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
NOTE)
DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Previous CodeJEITA Package Code RENESAS Code
PLQP0080KB-A 80P6Q-A MASS[Typ.]
0.5gP-LQFP80-12x12-0.50
1.0
0.125
0.18
1.25
1.25
0.08
0.200.1450.09
0.250.200.15
MaxNomMin
Dimension in Millimeters
Symbol
Reference
12.112.011.9
D12.112.011.9
E1.4
A214.214.013.8 14.214.013.8 1.7
A0.20.1
0
0.70.50.3
L
x
10°0°
c
0.5
e
0.08
y
HD
HE
A1
bp
b1
c1
ZD
ZE
L1
Terminal cross section
c
bp
c1
b1
A - 1
REVISION HISTORY M16C/63 Group Datasheet
Rev. Date Description
Page Summary
0.30 Jul 15, 2009 - First Edition issued.
0.40 Aug 18, 2009 3 Table 1.2 “Specifications for the 100-Pin Package (2/2)” partially modified
6 Table 1.5 “Product List” partially modified
7 Figure 1.1 “Part No., with Memory Size and Package” partially modified
12 Figure 1.7 “Pin Assignment for the 100-Pin Package” added
13 Table 1.6 “Pin Names for the 100-Pin Package (1/2)” partially modified
14 Table 1.7 “Pin Names for the 100-Pin Package (2/2)” partially modified
107 Table 5.65 “External Clock Input (XIN Input)” partially modified
112 Appendix 1. “Package Dimensions” PTLG0100KA-A added
0.41 Aug 25, 2009 6 Table 1.5 “Product List” Part No. partially modified
7 Figure 1.3 “Marking Diagram (Top View) (2/2)” added
1.00 Sep 15, 2009 52 Table 5.6 “A/D Conversion Characteristics (1/2)” note 3 added
2.00 Feb 07, 2011 Overall 001Ah Voltage Detector Operation Enable Register: Changed reset value from “000X 0000b”.
Overall 002Ah Voltage Monitor 0 Control Register: Changed reset value from “1100 XX10b”.
Overall 002Bh Voltage Monitor 1 Control Register: Changed reset value from “1000 1X10b”.
Overall 0324h Increment/Decrement Flag: Changed name from Up/Down Flag.
Overall 03DCh D/A Control Register: Changed reset value from “XXXX XX00b”.
Overall D08Ah to D08Bh PMC0 Counter Value Register: Deleted.
Overall D09Eh to D09Fh PMC1 Counter Value Register: Deleted.
Overview
3, 5 Table 1.2 and Table 1.4 Specifications for the 100/80-Pin Package: Deleted note 1.
6Table 1.5 Product List: Changed the development status.
18 Table 1.10 Pin Functions for the 100-Pin Package (1/3):
Changed the descriptions of the HOLD pin.
Address Space
27 Figure 3.2 Memory Map: Added note 1 and 3 to the reserved areas.
Special Function Registers (SFRs)
29 Table 4.1 SFR Information (1):
• Deleted “the VCR1 register, the VCR2 register” from note 2.
• Deleted notes 5 to 6 and added note 5.
30 Table 4.2 SFR Information (2): Deleted notes 2 to 7 and added note 2.
47 4.2.1 Register Settings: Added the description regarding read-modify-write instructions.
48 Table 4.20 Read-Modify-Write Instructions: Added.
Electrical Characteristics
49 Table 5.1 Absolute Maximum Ratings:
Divide a row for Topr (Flash program erase) into Program area and Data area.
50 Table 5.2 Recommended Operating Conditions (1/4):
Added rows for the CEC value to VCC1, VIH, and VIL.
56 Table 5.9 CPU Clock When Operating Flash Memory (f(BCLK)): Added note 3.
56 Table 5.10 Flash Memory (Program ROM 1, 2) Electrical Characteristics:
Added a condition to the Read voltage row.
59 Table 5.15 Power-On Reset Circuit:
• Changed the maximum value for Vpor1 from 0.1.
• Added the tw(por) row.
• Added the last line in note 1.
59 Figure 5.4 Power-On Reset Circuit Electrical Characteristics: Deleted note 2.
61 Table 5.17 40 MHz On-Chip Oscillator Electrical Characteristics: Deleted note 1.
63 Table 5.20 Electrical Characteristics (2): Added “ZP, IDU, IDV, IDW” to the VT+ - VT- row.
70, 91, 113 5.2.2.7, 5.3.2.7, and 5.4.2.7 Multi-master I2C-bus: Added.
71 Table 5.35 Memory Expansion Mode and Microprocessor Mode:
Changed RDY input setup time from 30.
A - 2
2.00 Feb 07, 2011 71 to 78, 92
to 99 Ta ble 5.35 to Table 5.40 and Table 5.56 to Table 5.61 Memory Expansion Mode and
Microprocessor Mode:
Deleted the following:
•HOLD input setup time
•HOLD input hold time
•HLDA output delay time
72, 93 Figure 5.14 and Figure 5.29 Timing Diagram:
Deleted lower figure (Common to wait state and no wait state settings).
83, 104 Figure 5.20 and Figure 5.35 Timing Diagram: Changed the width of th(RD-AD).
84 Table 5.41 Electrical Characteristics (1):
• Added rows for the CEC value to VOL, VT+-VT-, and Leakage current in powered-off state.
• Added “ZP, IDU, IDV, IDW” to the VT+ - VT- row.
85 Table 5.42 Electrical Characteristics (2): Changed “VCC1 = 5.0 V” to "VCC1 = 3.0 V" in the
During flash memory program and During flash memory erase rows.
92 Table 5.56 Memory Expansion Mode and Microprocessor Mode:
Changed RDY input setup time from 40.
105 Table 5.62 Electrical Characteristics (1):
• Changed the Measuring Condition over the table.
• Added “ZP, IDU, IDV, IDW” to the Parameter column and the value to the Measuring
Condition in the VT+ - VT- row.
• Changed the Measuring Condition in the IIH row.
106, 107 Table 5.63 Electrical Characteristics (2) and Table 5.64 Electrical Characteristics (3):
Changed the Measuring Condition over the table.
108 Table 5.66 External Clock Input (XIN Input): Changed the condition in note 1.
2.20 Nov 01, 2012 Overview
2Table 1.1 Specifications for the 100-Pin Package (1/2): Added the condition for 100.0 ns and
changed the condition for 200 ns in the Minimum instruction execution time in the Description
column of the CPU.
3Table 1.2 Specifications for the 100-Pin Package (2/2): Added “10 MHz/VCC1 = 2.1 to 5.5 V,
VCC2 = 2.1 V to VCC1” to the Description column of the Operation Frequency/Supply Voltage.
4Table 1.3 Specifications for the 80-Pin Package (1/2): Added the condition for 100.0 ns and
changed the condition for 200 ns in the Minimum instruction execution time in the Description
column of the CPU.
5Table 1.4 Specifications for the 80-Pin Package (2/2): Added “10 MHz/VCC1 = 2.1 to 5.5 V” to
the Description column of the Operation Frequency/Supply Voltage.
Electrical Characteristics
52
Table 5.4 Recommended Operating Conditions (3/4)
• Changed the Parameter “2.7 V ≤ VCC1 < 5.5 V” to “2.7 V ≤ VCC1 < 5.5 V, 1 MHz ≤ f(XIN) ≤ 20
MHz” in f(BCLK).
• Added the line for “2.1 V ≤ VCC1 < 2.7 V, 1 MHz ≤ f(XIN) ≤ 10 MHz” in f(BCLK).
• Changed the Parameter “1.8 V ≤ VCC1 < 2.7 V” to “1.8 V ≤ VCC1 < 2.1 V, 1 MHz ≤ f(XIN) ≤ 10
MHz” in f(BCLK).
53 Figure 5.1 Relation between f(BCLK) and VCC1: Modified the range of 2.1 V ≤ VCC1 < 2.7 V.
REVISION HISTORY M16C/63 Group Datasheet
Rev. Date Description
Page Summary
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General Precautions in the Handling of MPU/MCU Products
The following usage notes are applicable to all MPU/MCU products from Renesas. For detailed usage notes
on the products covered by this manual, refer to the relevant sections of the manual. If the descriptions under
General Precautions in the Handling of MPU/MCU Products and in the body of the manual differ from each
other, the description in the body of the manual takes precedence.
1. Handling of Unused Pins
Handle unused pins in acc ord with the directions given under Handlin g of Unused Pins in the
manual.
The input pins of CMOS products are generally in the high-impedance state. In operation
with an unused pin in the ope n-circuit state, extra electromagnetic noise is induced in the
vicinity of LSI, an associated shoot-through current flows internally, and malfunctions occur
due to the false recognition of the pin state as an input signal become possible. Unuse d
pins should be handle d as described under Handling of Unu s ed Pins in the manual.
2. Processing at Power-on
The state of the product is undefined at the moment when power is supplied.
The states of internal circuits in the LSI are indeterminate and the states of register
settings and pins are undefined at the moment when power is supplied.
In a finished product where the reset signal i s applied to the external reset pin, the states
of pins are not guaranteed from the moment when power is supplied until the reset
process is completed.
In a similar way, the states of pins in a product that is reset by an on-chip power-on reset
function are not guaranteed from the moment when power is supplied until the power
reaches the level at which res etting has been specified.
3. Prohibition of Access to Reserved Addr esses
Access to reserved addresses is prohibited.
The reserved addresses are provid ed for the possible future expansion of functions. Do
not access these addresses; the correct operation of LSI is not guaranteed if they are
accessed.
4. Clock Signals
After applying a reset, only release the reset line after the operating clock signal has become
stable. When switching the clock sign al during program execution, wait until the target clock
signal has stabilized.
When the clock signal is generated with an external resonator (or from an external
oscillator) during a reset, ensure that the reset line is only released after full stabilization of
the clock signal. Moreover, when switching to a clock sig na l produced with an external
resonator (or by an external oscillator) while program execution is in progress, wait until
the target clock signal is stable.
5. Differences between Products
Before changing from one product to another, i.e. to one with a different part number, confirm
that the change will not lead to problems.
The characteristics of MPU/MCU in the same group but ha ving different part numbers may
differ because of the differences in internal memory capacity and layout pattern. When
changing to products of different part numbers, implement a system-evaluation test for
each of the products.
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
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assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
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range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
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please evaluate the safety of the final products or systems manufactured by you.
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