Rev.1.00, May.24.2007, page 1 of 15
R1LV0416D Series
4M SRAM (256-kword × 16-bit)
REJ03C0311-0100
Rev.1.00
May.24.2007
Description
The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm
CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery
backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch
ball grid array.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
Standby: 3 µW (typ) (VCC = 3.0 V)
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
• Temperature Range: -40 to +85°C
R1LV0416D Series
Ordering Information
Type No. Access time Package
R1LV0416DSB-5SI 55 ns 400-mil 44-pin plastic TSOP II
R1LV0416DSB-7LI 70 ns PTSB0044GA-A (44P3W-H)
R1LV0416DBG-5SI 55 ns 48-ball CSP with 0.75 mm ball pitch
R1LV0416DBG-7LI 70 ns PTBG0048HB-A (48FHH)
Rev.1.00, May.24.2007, page 2 of 15
R1LV0416D Series
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
CS1#
I/O0
I/O1
I/O2
I/O3
V
V
I/O4
I/O5
I/O6
I/O7
WE#
A17
A16
A15
A14
A13
CC
SS
A5
A6
A7
OE#
UB#
LB#
I/O15
I/O14
I/O13
I/O12
V
V
I/O11
I/O10
I/O9
I/O8
CS2
A8
A9
A10
A11
A12
CC
SS
(Top view)
44-pin TSOP
(Top view)
48-ball CSP
A
B
C
D
E
F
G
H
1 2 3 4 5 6
LB#
I/O8
I/O9
VSS
VCC
I/O14
I/O15
NC
OE#
UB#
I/O10
I/O11
I/O12
I/O13
NC
A8
A3
A5
A17
NC
A14
A0
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CS1#
I/O1
I/O3
I/O4
I/O5
WE#
A11
CS2
I/O0
I/O2
VCC
VSS
I/O6
I/O7
NC
Pin Description
Pin name Function
A0 to A17 Address input
I/O0 to I/O15 Data input/output
CS1# (CS1) Chip select 1
CS2 Chip select 2
OE# (OE) Output enable
WE# (WE) Write enable
LB# (LB) Lower byte select
UB# (UB) Upper byte select
VCC Power supply
VSS Ground
NC No connection
Rev.1.00, May.24.2007, page 3 of 15
R1LV0416D Series
Block Diagram
•
•
•
•
•
•
•
•
•
•
•
I/O0
I/O15
CS2
WE#
OE#
A0 A1 A2 A4 A17
V
V
CC
SS
Row
decoder
Memory matrix
2,048 x 2,048
Column I/O
Column decoder
Input
data
control
Control logic
A5
A13
A7
A8
A9
A10
A11
A12
A6
A14
A15
A16
CS1#
LB#
UB#
A3
LSB
MSB
LSB MSB
Rev.1.00, May.24.2007, page 4 of 15
R1LV0416D Series
Operation Table
CS1# CS2 WE# OE# UB# LB# I/O0 to I/O7 I/O8 to I/O15 Operation
H × × × × × High-Z High-Z Standby
× L × × × × High-Z High-Z Standby
× × × × H H High-Z High-Z Standby
L H H L L L Dout Dout Read
L H H L H L Dout High-Z Lower byte read
L H H L L H High-Z Dout Upper byte read
L H L × L L Din Din Write
L H L × H L Din High-Z Lower byte write
L H L × L H High-Z Din Upper byte write
L H H H × × High-Z High-Z Output disable
Note: H: VIH, L: VIL, ×: VIH or VIL
Absolute Maximum Ratings
Parameter Symbol Value Unit
Power supply voltage relative to VSS V
CC −0.5 to +4.6 V
Terminal voltage on any pin relative to VSS V
T −0.5*1 to VCC + 0.3*2 V
Power dissipation PT 0.7 W
Operating temperature1 Topr −40 to +85 °C
Storage temperature range Tstg −65 to +150 °C
Storage temperature range under bias Tbias −40 to +85 °C
Notes: 1. VT min: −3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
DC Operating Conditions
Parameter Symbol Min Typ Max Unit Note
VCC 2.7 3.0 3.6 V Supply voltage
VSS 0 0 0 V
Input high voltage VIH 2.2 V
CC + 0.3 V
Input low voltage VIL −0.3 0.6 V 1
Ambient temperature range Ta −40 +85 °C
Note: 1. VIL min: −3.0 V for pulse half-width ≤ 30 ns.
Rev.1.00, May.24.2007, page 5 of 15
R1LV0416D Series
DC Characteristics
Parameter Symbol Min Typ Max Unit Test conditions
Input leakage current |ILI| 1 µA Vin = VSS to VCC
Output leakage current |ILO| 1 µA CS1# = VIH or CS2 = VIL or
OE# = VIH or WE# = VIL or
LB# = UB# = VIH,
VI/O = VSS to VCC
Operating current ICC 20 mA CS1# = VIL, CS2 = VIH,
Others = VIH/VIL, II/O = 0 mA
ICC1 25 mA Min. cycle, duty = 100%,
II/O = 0 mA, CS1# = VIL,
CS2 = VIH,
Others = VIH/VIL
Average operating current
ICC2 5 mA Cycle time = 1 µs,
duty = 100%,
II/O = 0 mA, CS1# ≤ 0.2 V,
CS2 ≥ VCC − 0.2 V
VIH ≥ VCC − 0.2 V, VIL ≤ 0.2 V
Standby current ISB 0.1*1 0.3 mA CS2 = VIL
to +85°C ISB1 10 µA
to +70°C ISB1 8 µA
to +40°C ISB1 3 µA
−5SI
to +25°C ISB1 1*1 2.5 µA
to +85°C ISB1 20 µA
to +70°C ISB1 16 µA
to +40°C ISB1 10 µA
Standby current
−7LI
to +25°C ISB1 1*1 10 µA
Vin ≥ 0 V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS1# ≥ VCC − 0.2 V,
CS2 ≥ VCC − 0.2 V or
(3) LB# = UB# ≥ VCC − 0.2 V,
CS2 ≥ VCC − 0.2 V,
CS1# ≤ 0.2 V
Average values
VOH 2.4 — — V IOH = −1 mA Output high voltage
VOH2 V
CC − 0.2 — — V IOH = −100 µA
VOL — — 0.4 V IOL = 2 mA Output low voltage
VOL2 — — 0.2 V IOL = 100 µA
Note: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter Symbol Min Typ Max Unit Test conditions Note
Input capacitance Cin 8 pF Vin = 0 V 1
Input/output capacitance CI/O 10 pF VI/O = 0 V 1
Note: 1. This parameter is sampled and not 100% tested.
Rev.1.00, May.24.2007, page 6 of 15
R1LV0416D Series
AC Characteristics
(Ta = -40 to +85°C, VCC = 2.7 V to 3.6 V)
Test Conditions
Input pulse levels: VIL = 0.4 V, VIH = 2.4 V
50pF
Dout
RL=500 Ω
1.4 V
Output load
• Input rise and fall time: 5 ns
• Input/output timing reference levels: 1.4 V
• Output load: See figures (Including scope and jig)
Rev.1.00, May.24.2007, page 7 of 15
R1LV0416D Series
Read Cycle
R1LV0416D
-5SI -7LI
Parameter Symbol Min Max Min Max Unit Notes
Read cycle time tRC 55 70 ns
Address access time tAA 55 70 ns
tACS1 55 70 ns Chip select access time
tACS2 55 70 ns
Output enable to output valid tOE 35 40 ns
Output hold from address change tOH 10 10 ns
LB#, UB# access time tBA 55 70 ns
tCLZ1 10 10 ns 2, 3 Chip select to output in low-Z
tCLZ2 10 10 ns 2, 3
LB#, UB# disable to low-Z tBLZ 5 5 ns 2, 3
Output enable to output in low-Z tOLZ 5 5 ns 2, 3
tCHZ1 0 20 0 25 ns 1, 2, 3 Chip deselect to output in high-Z
tCHZ2 0 20 0 25 ns 1, 2, 3
LB#, UB# disable to high-Z tBHZ 0 20 0 25 ns 1, 2, 3
Output disable to output in high-Z tOHZ 0 20 0 25 ns 1, 2, 3
Rev.1.00, May.24.2007, page 8 of 15
R1LV0416D Series
Write Cycle
R1LV0416D
-5SI -7LI
Parameter Symbol Min Max Min Max Unit Notes
Write cycle time tWC 55 70 ns
Address valid to end of write tAW 50 60 ns
Chip selection to end of write tCW 50 60 ns 5
Write pulse width tWP 40 50 ns 4
LB#, UB# valid to end of write tBW 50 55 ns
Address setup time tAS 0 0 ns 6
Write recovery time tWR 0 0 ns 7
Data to write time overlap tDW 25 30 ns
Data hold from write time tDH 0 0 ns
Output active from end of write tOW 5 5 ns 2
Output disable to output in high-Z tOHZ 0 20 0 25 ns 1, 2, 3
Write to output in high-Z tWHZ 0 20 0 25 ns 1, 2
Notes: 1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not
referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and from
device to device.
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write
begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB#
going low. A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and
LB# going high or UB# going high. tWP is measured from the beginning of write to the end of write.
5. tCW is measured from the later of CS1# going low or CS2 going high to the end of write.
6. tAS is measured from the address valid to the beginning of write.
7. tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.
Rev.1.00, May.24.2007, page 9 of 15
R1LV0416D Series
Timing Waveform
Read Timing Waveform (WE# = VIH)
tAA
tACS1
tACS2
tCLZ2
tCLZ1
tBLZ
tBA
tOH
tRC
Valid data
Address
Dout
Valid address
High impedance
CS1#
CS2
LB#, UB#
OE#
*1, 2, 3
*1, 2, 3
*2, 3
*2, 3
*2, 3
*1, 2, 3
tOLZ*2, 3
*1, 2, 3
tOE
tCHZ1
tCHZ2
tBHZ
tOHZ
Rev.1.00, May.24.2007, page 10 of 15
R1LV0416D Series
Write Timing Waveform (1) (WE# Clock)
Address
WE#
tWC
tAW
tWP*4
tWR*7
tCW*5
tCW*5
tBW
tAS*6
tOW*2
tWHZ*1, 2
tDW tDH
Valid address
Valid data
CS1#
LB#, UB#
Dout
Din
High impedance
CS2
Rev.1.00, May.24.2007, page 11 of 15
R1LV0416D Series
Write Timing Waveform (2) (CS# Clock, OE# = VIH)
Address
WE#
tWC
tAW
tWP*4
tWR*7
tCW*5
tCW*5
tBW
tAS*6
tDW tDH
Valid address
Valid data
LB#, UB#
Dout
Din
High impedance
CS2
CS1#
Rev.1.00, May.24.2007, page 12 of 15
R1LV0416D Series
Write Timing Waveform (3) (LB#, UB# Clock, OE# = VIH)
Address
WE#
t
WC
t
AW
t
WP
*
4
t
CW
*
5
t
CW
*
5
t
BW
t
WR
*
7
t
DW
t
DH
Valid address
Valid data
LB#, UB#
Dout
Din
High impedance
CS2
CS1#
t
AS
*
6
Rev.1.00, May.24.2007, page 13 of 15
R1LV0416D Series
Low VCC Data Retention Characteristics
(Ta = -40 to +85°C)
Parameter Symbol Min Typ Max Unit Test conditions
VCC for data retention VDR 2.0 V Vin ≥ 0V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ VCC − 0.2 V,
CS1# ≥ VCC − 0.2 V or
(3) LB# = UB# ≥ VCC − 0.2 V,
CS2 ≥ VCC − 0.2 V,
CS1# ≤ 0.2 V
to +85°C ICCDR 10 µA
to +70°C ICCDR 8 µA
to +40°C ICCDR 3 µA
−5SI
to +25°C ICCDR 1*1 2.5 µA
to +85°C ICCDR 20 µA
to +70°C ICCDR 16 µA
to +40°C ICCDR 10 µA
Data
retention
current
−7LI
to +25°C ICCDR 1*1 10 µA
VCC = 3.0 V, Vin ≥ 0V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ VCC − 0.2 V,
CS1# ≥ VCC − 0.2 V or
(3) LB# = UB# ≥ VCC − 0.2 V,
CS2 ≥ VCC − 0.2 V,
CS1# ≤ 0.2 V
Average values
Chip deselect to data retention time tCDR 0 ns
Operation recovery time tR 5 ms
See retention waveform
Note: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
Rev.1.00, May.24.2007, page 14 of 15
R1LV0416D Series
Rev.1.00, May.24.2007, page 15 of 15
Low VCC Data Retention Timing Waveform (1) (CS1# Controlled)
CC
V
2.2 V
2.7 V
0 V
CS1#
t
CDR
t
R
CS1# V – 0.2 V
CC
≥
DR
V
Data retention mode
CC
V
2.7 V
0.6 V
0 V
CS2
CDR
t
R
0 V CS2 0.2 V
DR
V
Data retention modet
<<
CC
V
2.2 V
2.7 V
0 V
LB#, UB#
tCDR tR
LB#, UB# V – 0.2 V
CC
≥
DR
V
Data retention mode
Low VCC Data Retention Timing Waveform (2) (CS2 Controlled)
Low VCC Data Retention Timing Waveform (3) (LB#, UB# Controlled)
Revision History R1LV0416D Series Data Sheet
Contents of Modification Rev. Date Page Description
0.01 Dec. 25, 2006 Initial issue
1.00 May. 24, 2007 2
3
4
5
5
6
7
14
Ordering Information
R1LV0416DSB-5S% to R1LV0416DSB-5SI
R1LV0416DSB-7L% to R1LV0416DSB-7LI
R1LV0416DBG-5S% to R1LV0416DBG-5SI
R1LV0416DBG-7L% to R1LV0416DBG-7LI
Pin Arrangement
A6 to A13, A13 to A6
Change of Block Diagram
Absolute Maximum Ratings: Deletion of R ver. specification
DC Operating Conditions: Deletion of R ver. specification
DC Characteristics
ISB1 (-5SI) (to +25°C) max: 3 µA to 2.5 µA
AC Characteristics: Change of Test Conditions
Low VCC Data Retention Characteristics
ICCDR (-5SI) (to +25°C) max: 3 µA to 2.5 µA
Deletion of note 2
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant t hat such information is error free. Renesas El ectronics assumes no liabil ity whatso ever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
7. Ren esas Electronics produ cts are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommend ed applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressl y specified in a Renesas Electro nics data sheets or data books, etc.
“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electro nic app liances; machine tools; personal electro nic equipment; and industrial ro bots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
interven tion (e.g. exci sion, et c.), and any other applicatio ns or purposes that pose a direct threat t o human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific chara cteristi cs such as the o ccurren ce of failure at a certai n rat e and malfun cti on s under certain u se cond itions. Further,
Renesas Electronics pr oducts are not subject to radi ation resi stance design. Please b e sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Renesas Electronics sal es office for d etails as to envi ronmental matters such as t he enviro nmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Ren esas E lectroni cs” as used in th is document means Renesas Ele ct r onics Co rporation and al so includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
