CS19-12ho1S High Efficiency Thyristor VRRM = 1200 V I TAV = 20 A VT = 1.31 V Single Thyristor Part number CS19-12ho1S Backside: anode 4/2 1 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b CS19-12ho1S Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1300 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 V I R/D reverse current, drain current VR/D = 1200 V TVJ = 25C 50 A VR/D = 1200 V TVJ = 125C 1 mA TVJ = 25C 1.32 V 1.65 V 1.31 V VT IT = forward voltage drop 20 A IT = 40 A IT = 20 A IT = 40 A I TAV average forward current TC = 110C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing typ. TVJ = 125 C for power loss calculation only Ptot It min. 1.73 V T VJ = 125 C 20 A 31 A TVJ = 125 C 0.86 V 0.50 W t = 10 ms; (50 Hz), sine TVJ = 45C 180 A t = 8,3 ms; (60 Hz), sine VR = 0 V 195 A t = 10 ms; (50 Hz), sine TVJ = 125 C 155 A t = 8,3 ms; (60 Hz), sine VR = 0 V 165 A t = 10 ms; (50 Hz), sine TVJ = 45C 160 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 160 As TVJ = 125 C 120 As 115 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 230 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 9 t P = 300 s average gate power dissipation critical rate of rise of current K/W 170 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 22 0.7 TVJ = 150C; f = 50 Hz repetitive, IT = 60 A non-repet., IT = 20 A pF 5 W 2.5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.15 A/s; I G = 0.15 A; VD = VDRM (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage I GT gate trigger current 500 A/s TVJ = 150C 500 V/s VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 2.5 V VD = 6 V TVJ = 25 C 28 mA TVJ = -40 C 50 mA TVJ = 150 C 0.2 V 3 mA TVJ = 25 C 75 mA VD = VDRM R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s IG = 0.1 A; di G /dt = V 0.1 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 50 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.1 A; di G /dt = 0.1 A/s VR = 100 V; I T = 20 A; VD = VDRM TVJ = 125 C di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b CS19-12ho1S Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 C -40 125 C Weight 2 FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part No. IXYS yyww z Logo Date Code Assembly Line 000000 Assembly Code Ordering Standard Part Number CS19-12ho1S Similar Part CS19-12ho1 CS19-08ho1 CS19-08ho1S Equivalent Circuits for Simulation I V0 R0 Package TO-220AB (3) TO-220AB (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tape & Reel Quantity 800 Code No. 501313 Voltage class 1200 800 800 T VJ = 125C Thyristor V 0 max threshold voltage 0.86 R 0 max slope resistance * 19 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Marking on Product CS19-12ho1S V m Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b CS19-12ho1S Outlines TO-263 (D2Pak) Dim. L1 c2 Supplier Option A1 H D E A D1 W 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 4/2 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b CS19-12ho1S Thyristor 60 160 1000 50 Hz, 80% VRRM VR = 0 V 140 40 120 IT [A] 2 It TVJ = 45C ITSM 2 100 20 TVJ = 45C 100 [A s] TVJ = 125C [A] 125C 150C TVJ = 125C 80 TVJ = 25C 0 0.5 60 1.0 1.5 2.0 10 2.5 0.01 0.1 100 1 3 4 5 6 7 8 910 t [s] t [ms] Fig. 3 I t versus time (1-10 ms) 2 1000 1: IGD, TVJ = 150C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 2 Fig. 2 Surge overload current VT [V] Fig. 1 Forward characteristics 1 40 dc = 1 0.5 0.4 0.33 0.17 0.08 30 10 100 VG 5 3 [s] [A] 1 1 IT(AV)M Limit 20 4 2 [V] typ. tgd 6 10 TVJ = 125C 10 4: PGAV = 0.5 W 0.1 5: PGM = 2.5 W 6: PGM = 5 W IGD, TVJ = 125C 1 10 100 1 10 1000 0 100 1000 0 25 IG [mA] IG [mA] 75 100 125 150 175 TC [C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 50 Fig. 6 Max. forward current at case temperature 0.8 dc = 1 0.5 0.4 0.33 0.17 0.08 40 30 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 P(AV) 0.6 ZthJC 0.4 20 Rthi [K/W] [K/W] [W] 0.2 10 0 0 10 20 IF(AV) [A] 0 50 100 0.0 100 150 Tamb [C] (c) 2013 IXYS all rights reserved 102 0.01 0.0011 0.18 0.17 0.17 0.025 0.32 0.09 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 101 ti [s] 0.1 0.08 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b