SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101Silicon Transistors The General Electric 2N3390 is an NPN silicon planar passivated transistor designed as a small signal industrial amplifier. This device features tight beta control at an extremely low price. absolute maximum ratings: (25C) (unless otherwise specified) Voltages Collector to Emitter VcEo 18 Vv Emitter to Base VeRO 5 Vv Collector to Base Vero 18 Vv Current Collector (Steady State)* I, 100 ma Dissipation Total Power (Free air at 25C)** Py 360 mw Total Power (Free air at 55C)** Py 260 mw Temperature Storage TstG -55 to +125C Operating Ty +125C *Determined from power limitations due to saturation voltage at this current. **Derate 2.67 mw/C increase in ambient temperature above 25C. electrical characteristics: (25C) (untess otherwise specified) Sym. Min. Max. STATIC CHARACTERISTICS Collector Cutoff Current (Vcp = 18V) Iago 0.1 (Vcp = 18V, Ta = 100C) Topo 10.0 Emitter Cutoff Current (Ves = SV) lego 0.1 Collector Cutoff Current (Vce = 25V) Ices 0.1 Forward Current Transfer Ratio (Vce = 4.5V,1I = 2mA) hee 400 800 Coilector-Emitter Breakdown Voltage (Ic = ImA) V(BRICEO 25 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio (Vce = 4.5V, I. = 2mA, f = IkHz) hee 400 1250 Output Capacitance, Common Base (Vcp = 10V,I,_ = 0, f = 1MHz) C obo 2 10 353 = Go 2N3390 205 | DIMENSIONS WITHIN 195 JEDEC OUTLINE TO-98 190 am Fe 165 WOTE 1: Lead diameter is controlled in the O75 T zone between .070 and .250 from the seat- rod ing plane, Between .250 and end of lead a . I 265 max. of .021 is held. 225 s | U U y ft :500 SEATING ALL OIMEN. IN INCHES AND ARE MIN PLANE REFERENCE UNLESS TOLERANCED tf t. Gene oo 008 4 -|.100+ .005 3 LEADS 2105, 090 4.002 - O17 oor (NOTE 1) ae fanean ant. Units pF