HIGH SPEED PIN PHOTODIODES
SPECIFICATIONS
Responsivity: 0.50 A/W min., 0.62 A/W typ. @ 900nm
Part Number
Total
Area
Active
Area
Dark Current1
at 50V
Breakdown
Voltage2
at 10µA
Capacitance3
Typ.
NEP4
Max
Linear
Current5
Response
Time6
at 60V
Typ. Max. Typ. at 0V at 50V Typ. Typ. Typ.
(mm2) (in) (nA) (nA) (V) (pF) (pF) (W/√Hz) (mA) (ns)
SD 020-11-33-211 0.20 0.020
(dia). 0.5 2.0 75 2.1 0.3 2.4x10-14 0.02 1
SD 041-11-33-211 0.85 0.040
x
0.033
2.0 8.0 75 5.6 0.5 4.8x10-14 0.08 2
SD 076-11-31-211 2.91
0.105
x
0.043
8.0 30 75 17 2.5 1.0x10-13 0.29 2
SD 100-11-31-221 5.1 0.100
(dia.) 12 50 75 28 3.5 1.3x10-13 0.51 2
SD 172-11-31-221 15
0.185
x
0.125
35 147 75 82 10 2.0x10-13 1.5 2
SD 200-11-31-241 20.3 0.200
(dia). 50 200 75 110 11 3.0x10-13 2.03 2
SD 290-11-31-241 42.6 0.300
x
0.220
110 425 75 235 22 3.8x10-13 4.26 3
* All values at 23°C
1. Dark Current varies with temperature as follows; for T≠23°C, IDT = ID23 * 1.09∆T, where ∆T=(T-23) and ID23 is the dark current at 23°C.
2. Typical values listed. Minimum value shall be 50V.
3. Typical values listed. Maximum value shall be 20% higher than the typical.
4. Test conditions are VB = -50V, and 950 nm.
5. In photovoltaic mode. Maximum linear current specifies the level at which the output current characteristic deviates more than 10% from the
straight line. The short circuit current saturates at approximately 10 times this level.
6. Response Time (transition time between 10% and 90% of the output signal amplitude) measured at 670 nm with a 50Ω load. Shorter wavelengths
will result in faster rise and fall times.
Storage and Operating Temperature Range for all photodiodes is -40°C to 110°C
Absolute Spectral Responsivity
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
200 300 400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
Responsivity (A/W)
Dimensional Outlines
SD 041-11-33-211
SD 020-11-33-211
SD 076-11-31-211
SD 100-11-31-221
SD 172-11-31-221 SD 290-11-31-241
SD 200-11-31-241
