Features
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Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
FPD200
GENERAL PURPOSE pHEMT DIE
The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (pHEMT), featuring a 0.25μmx200μm Schottky barrier gate,
defined by high-resolution stepper-based photolithography. The recessed
gate structure minimizes parasitics to optimize performance. The epitaxial
structure and processing have been optimized for reliable high-power
applications.
19dBm Output P1dB
13dB Power Gain at 12GHz
17dB Maximum Stable Gain
at 12GHz
12dB Maximum Stable Gain
at 18GHz
45% Power-Added Efficiency
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Rev A1 DS090519
9
Package Style: Bare Die
FPD200Gen-
eral Purpose
pHEMT Die
Parameter Specification Unit Condition
Min. Typ. Max.
P1dB Gain Compression 18 19 dBm VDS=5V, IDS =50% IDSS
Power Gain at P1dB (G1dB)11.013.0 dBV
DS=5V, IDS =50% IDSS
Noise Figure 1.2 dB VDS=5V, IDS =50% IDSS
PAE 45 % VDS=5V, IDS =50% IDSS, POUT =P1dB
Maximum Stable Gain (S21/S12) 16 17 dB VDS=5V, IDS =50% IDSS, f=12GHz
10.5 12 dB VDS =5V, IDS =50% IDSS, f=24GHz
Saturated Drain-Source Current (IDSS)456075mAV
DS=1.3V, VGS=0V
Maximum Drain-Source Current
(IMAX)120 mA VDS =1.3V, VGS ≈+1V
Transconductance 80 ms VDS=1.3V, VGS=0V
Gate-Source Leakage Current (IGSO)110μAV
GS=-5V
Pinch-Off Voltage (VP) |0.7| |1.0| |1.3| V VDS=1.3V, IDS =0.2mA
Gate-Source Breakdown Voltage
(VBDGS)|12.0| |14.0| V IGS=0.2mA
Gate-Drain Breakdown Voltage
(VBDGD)|14.5| |16.0| V IGD =0.2mA
Thermal Resistivity (θJC) 280 °C/W VDS>3V
Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal on a sample basis.