FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. Optimum Technology Matching(R) Applied 13dB Power Gain at 12GHz 17dB Maximum Stable Gain at 12GHz 12dB Maximum Stable Gain at 18GHz 45% Power-Added Efficiency GaAs HBT Applications GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS 9 19dBm Output P1dB SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Narrowband and Broadband High-Performance Amplifiers SATCOM Uplink Transmitters PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers Medium-Haul Digital Radio Transmitters InP HBT RF MEMS LDMOS Parameter Min. P1dB Gain Compression Power Gain at P1dB (G1dB) Unit Condition 18 19 dBm VDS =5V, IDS =50% IDSS 13.0 dB VDS =5V, IDS =50% IDSS 1.2 45 dB % 17 12 dB dB VDS =5V, IDS =50% IDSS VDS =5V, IDS =50% IDSS, POUT =P1dB VDS =5V, IDS =50% IDSS, f=12GHz VDS =5V, IDS =50% IDSS, f=24GHz mA VDS =1.3V, VGS =0V mA VDS =1.3V, VGS +1V 16 10.5 Saturated Drain-Source Current (IDSS) Max. 11.0 Noise Figure PAE Maximum Stable Gain (S21/S12) Specification Typ. 45 Maximum Drain-Source Current (IMAX) Transconductance 60 75 120 80 Gate-Source Leakage Current (IGSO) ms VDS =1.3V, VGS =0V 1 10 A VGS =-5V |1.3| V V VDS =1.3V, IDS =0.2mA IGS =0.2mA IGD =0.2mA Pinch-Off Voltage (VP) Gate-Source Breakdown Voltage (VBDGS) |0.7| |12.0| |1.0| |14.0| Gate-Drain Breakdown Voltage (VBDGD) Thermal Resistivity (JC) |14.5| |16.0| V 280 C/W VDS >3V Note: TAMBIENT =22C, RF specifications measured at f=12GHz using CW signal on a sample basis. RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. Rev A1 DS090519 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 FPD200 Absolute Maximum Ratings1 Parameter Rating Caution! ESD sensitive device. Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Drain-Source Voltage (VDS) (-3V<VGS <-0.5V)2 8 V Gate-Source Voltage (VGS) (0V<VDS <+8V) -3 V Drain-Source Current (IDS) (For VDS <2V) IDSS Gate Current (IG) (Forward or reverse current) 10 mA RF Input Power (PIN) (Under any acceptable bias state) 20 dBm Channel Operating Temperature (TCH) (Under any acceptable bias state) 175 C -65 to 150 C Total Power Dissipation (PTOT)3, 4, 5 0.5 W Gain Compression (under any bias conditions) 5 dB Simultaneous Combination of Limits6 (2 or more max. limits) 80 % RoHS status based on EUDirective2002/95/EC (at time of this document revision). Storage Temperature (TSTG) (Non-Operating Storage) The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Notes: 1T AMBIENT =22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device. 2Operating at absolute maximum V continuously is not recommended. If operation D at 8V is considered then IDS must be reduced in order to keep the part within its thermal power dissipation limits. Therefore VGS is restricted to <-0.5V. 3Total Power Dissipation to be de-rated as follows above 22C: P TOT =500mW(3.6mW/C)xTHS, where THS =heatsink or ambient temperature above 22C. Example: For a 85C carrier temperature: PTOT =500-(3.6mWx(85-22))=.27W 4Total Power Dissipation (P TOT) defined as (PDC +PIN)-POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. 5 Users should avoid exceeding 80% of 2 or more Limits simultaneously. 6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Auplated copper heatsink or rib. Pad Layout C1 B A C2 2 of 6 Pad A B C1/C2 Description Gate Pad Drain Pad Source Pad Pin Coordinates (m) 90, 200 320, 200 200, 290/110 Note: Coordinates are referenced from the bottom left hand corner of the die to the center of the bond pad opening. Die Size (m) Die Thickness (m) Min. Bond Pad Opening (mxm) 400x400 75 75x80 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS090519 FPD200 Typical Measured Performance FPD200 Biased @ 5V, 27mA FPD2 00 Biased @ 8V, 27mA 35 S21 25 S21 25 20 & 20 & 15 Mag S21 10 15 10 5 5 0 0 0.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26 Frequency (GHz ) Associated Gain and N.F.min vs Frequency Biased @ 3V, 27mA 0.5 18.0 17.0 16.0 0 2.0 18.0 17.0 16.0 15.0 14.0 13.0 12.0 11.0 9.0 10.0 8.0 7.0 6.0 5.0 4.0 8.0 N.F.min (dB) 1 10.0 0 3.0 8.0 12.0 15.0 0.5 14.0 1 10.0 1.5 13.0 12.0 14.0 12.0 1.5 2 11.0 14.0 16.0 9.0 2 2.5 10.0 16.0 3 18.0 8.0 2.5 3.5 Gain (dB) N.F.min 20.0 3 18.0 2.0 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26 F requency (GHz ) Associated Gain (dB) Associated Gain (dB) 6.5 22.0 3.5 Gain (dB) N.F.min 20.0 4.5 Associated Gain and N.F.min vs Frequency Biased @ 5V, 27mA N.F.min (dB) 22.0 2.5 7.0 6.5 6.0 4.5 5.0 2.5 4.0 0.5 3.0 Mag S21 MSG 30 MSG (dB) 30 MSG (dB) 35 MSG Frequency (GHz) Frequency (GHz) Typical Wafer Distributions Note: Data taken from a typical wafer at ambient temperature. Future wafers may have nominal values anywhere within the specifications range. LS L = 0.045 A 5000 Mean StDev N LS L= -1. 3 V 3000 US L = 0.075 A 0.06103 0.003473 23955 US L = -0.7 V Mean StDev N 2500 -0.8820 0.02686 23867 4000 Fr eque ncy Fre quency 2000 3000 2000 1500 1000 1000 500 0 0.040 0.045 Rev A1 DS090519 0.050 0. 055 0.060 0. 065 IDSS ( A) 0.070 0.075 0.080 0 -1. 3 -1. 2 -1.1 -1.0 VP (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. -0.9 -0.8 -0.7 3 of 6 FPD200 Noise Parameters (Biased @ VDS =3V, IDS =27mA) 4 of 6 Freq GHz N.F.min dB Rn/50 Gamma Opt. Mag Angle 2.00 0.32 0.31 0.75 6.70 3.00 0.41 0.31 0.71 14.60 4.00 0.52 0.29 0.74 22.60 5.00 0.55 0.28 0.62 27.90 6.00 0.62 0.26 0.63 34.90 41.50 7.00 0.78 0.26 0.54 8.00 0.87 0.26 0.48 47.50 9.00 1.00 0.25 0.43 54.40 10.00 1.08 0.24 0.41 60.20 11.00 1.20 0.24 0.41 65.70 12.00 1.28 0.24 0.34 78.60 13.00 1.37 0.24 0.28 89.70 14.00 1.55 0.22 0.24 95.90 15.00 1.70 0.20 0.23 103.70 16.00 1.85 0.20 0.24 113.50 17.00 1.99 0.19 0.17 137.10 18.00 2.09 0.18 0.20 156.80 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS090519 FPD200 Preferred Assembly Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended. For manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for 1 hour in an oven especially set aside for epoxy curing only. If possible, the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280C but the absolute temperature being used depends on the leadframe material used and the particular application. The maximum time should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependant on the setup and application being used. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD/MSL Rating These devices should be treated as Class 0 (0V to 250V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Application Notes and Design Data Application Notes and design data including S-parameters, noise parameters, and device model are available on request and from www.rfmd.com. Reliability An MTTF of 4.2 million hours at a channel temperature of 150C is achieved for the process used to manufacture this device. Disclaimers This product is not designed for use in any space-based or life-sustaining/supporting equipment. Ordering Information Rev A1 DS090519 Delivery Quantity Ordering Code Full Pack (100) FPD200-000 Small Quantity (25) FPD200-000SQ Sample Quantity (3) FPD200-000S3 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 FPD200 6 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS090519