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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
FPD200
GENERAL PURPOSE pHEMT DIE
The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (pHEMT), featuring a 0.25μmx200μm Schottky barrier gate,
defined by high-resolution stepper-based photolithography. The recessed
gate structure minimizes parasitics to optimize performance. The epitaxial
structure and processing have been optimized for reliable high-power
applications.
19dBm Output P1dB
13dB Power Gain at 12GHz
17dB Maximum Stable Gain
at 12GHz
12dB Maximum Stable Gain
at 18GHz
45% Power-Added Efficiency
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Rev A1 DS090519
9
Package Style: Bare Die
FPD200Gen-
eral Purpose
pHEMT Die
Parameter Specification Unit Condition
Min. Typ. Max.
P1dB Gain Compression 18 19 dBm VDS=5V, IDS =50% IDSS
Power Gain at P1dB (G1dB)11.013.0 dBV
DS=5V, IDS =50% IDSS
Noise Figure 1.2 dB VDS=5V, IDS =50% IDSS
PAE 45 % VDS=5V, IDS =50% IDSS, POUT =P1dB
Maximum Stable Gain (S21/S12) 16 17 dB VDS=5V, IDS =50% IDSS, f=12GHz
10.5 12 dB VDS =5V, IDS =50% IDSS, f=24GHz
Saturated Drain-Source Current (IDSS)456075mAV
DS=1.3V, VGS=0V
Maximum Drain-Source Current
(IMAX)120 mA VDS =1.3V, VGS ≈+1V
Transconductance 80 ms VDS=1.3V, VGS=0V
Gate-Source Leakage Current (IGSO)110μAV
GS=-5V
Pinch-Off Voltage (VP) |0.7| |1.0| |1.3| V VDS=1.3V, IDS =0.2mA
Gate-Source Breakdown Voltage
(VBDGS)|12.0| |14.0| V IGS=0.2mA
Gate-Drain Breakdown Voltage
(VBDGD)|14.5| |16.0| V IGD =0.2mA
Thermal Resistivity (θJC) 280 °C/W VDS>3V
Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal on a sample basis.
2 of 6 Rev A1 DS090519
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD200
Pad Layout
Note: Coordinates are referenced from the bottom left hand
corner of the die to the center of the bond pad opening.
Absolute Maximum Ratings1
Parameter Rating Unit
Drain-Source Voltage (VDS)
(-3V<VGS<-0.5V)2
8V
Gate-Source Voltage (VGS)
(0V<VDS <+8V)
-3 V
Drain-Source Current (IDS)
(For VDS<2V)
IDSS
Gate Current (IG)
(Forward or reverse current)
10 mA
RF Input Power (PIN)
(Under any acceptable bias state)
20 dBm
Channel Operating Temperature (TCH)
(Under any acceptable bias state)
175 °C
Storage Temperature (TSTG)
(Non-Operating Storage)
-65 to 150 °C
Total Power Dissipation (PTOT)3, 4, 5 0.5 W
Gain Compression (under any bias
conditions) 5dB
Simultaneous Combination of Limits6
(2 or more max. limits)
80 %
Notes:
1TAMBIENT =22°C unless otherwise noted; exceeding any one of these absolute max-
imum ratings may cause permanent damage to the device.
2Operating at absolute maximum VD continuously is not recommended. If operation
at 8V is considered then IDS must be reduced in order to keep the part within its
thermal power dissipation limits. Therefore VGS is restricted to <-0.5V.
3Total Power Dissipation to be de-rated as follows above 22°C: PTOT =500mW -
(3.6mW/°C)xTHS, where THS =heatsink or ambient temperature above 22°C.
Example: For a 85°C carrier temperature: PTOT =500-(3.6mWx(85-22))=.27W
4Total Power Dissipation (PTOT) defined as (PDC+PIN)–POUT, where PDC: DC Bias
Power, PIN: RF Input Power, POUT: RF Output Power.
5Users should avoid exceeding 80% of 2 or more Limits simultaneously.
6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Au-
plated copper heatsink or rib.
Pad Description Pin Coordinates (μm)
AGate Pad
90, 200
BDrain Pad
320, 200
C1/C2 Source Pad 200, 290/110
Die Size (μm) Die Thickness (μm) Min. Bond Pad Opening (μmxμm)
400x400 75 75x80
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
AB
C1
C2
3 of 6Rev A1 DS090519
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FPD200
Typical Measured Performance
Typical Wafer Distributions
Note: Data taken from a typical wafer at ambient temperature. Future wafers may have nominal values anywhere within the
specifications range.
0.5 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26
F r equency (GHz)
FPD 200 B iased @ 5V, 27mA
0
5
10
15
20
25
30
35
Mag S21 & MSG (dB)
MSG
S21
0.5 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26
Frequenc y (GHz)
FPD2 00 Bi ased @ 8V, 27mA
0
5
10
15
20
25
30
35
Mag S21 & MSG (dB)
MSG
S21
Associated Gain a nd N.F.min vs Fr e quency
Bi ased @ 3V, 27mA
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Frequency (GHz)
Associat ed Gain
(dB)
0
0.5
1
1.5
2
2.5
3
3.5
N.F.min (dB)
Gain (dB)
N.F.min
As sociated Gain and N.F.min vs Frequency
Biased @ 5V , 27mA
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
F re q uenc y ( GH z)
Asso ciated Gain
(dB)
0
0.5
1
1.5
2
2.5
3
3.5
N.F.min (dB)
Gain (dB)
N.F.min
IDSS (A)
Frequency
0.0800.0750.0700.0650.0600.0550.0500.0450.040
5000
4000
3000
2000
1000
0
LSL = 0.045 A USL = 0.075 A
Mean 0.06103
StDev 0.003473
N 23955
VP (V)
Fr eq ue ncy
-0.7-0.8-0.9-1.0-1.1-1. 2-1. 3
3000
2500
2000
1500
1000
500
0
US L = -0.7 VLS L= -1 .3 V
Mean -0.8820
StDev 0.02686
N 23867
4 of 6 Rev A1 DS090519
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD200
Noise Parameters (Biased @ VDS=3V, IDS =27mA)
Freq N.F.min Rn/50 Gamma Opt.
GHz dB ΩMag Angle
2.00 0.32 0.31 0.75 6.70
3.00 0.41 0.31 0.71 14.60
4.00 0.52 0.29 0.74 22.60
5.00 0.55 0.28 0.62 27.90
6.00 0.62 0.26 0.63 34.90
7.00 0.78 0.26 0.54 41.50
8.00 0.87 0.26 0.48 47.50
9.00 1.00 0.25 0.43 54.40
10.00 1.08 0.24 0.41 60.20
11.00 1.20 0.24 0.41 65.70
12.00 1.28 0.24 0.34 78.60
13.00 1.37 0.24 0.28 89.70
14.00 1.55 0.22 0.24 95.90
15.00 1.70 0.20 0.23 103.70
16.00 1.85 0.20 0.24 113.50
17.00 1.99 0.19 0.17 137.10
18.00 2.09 0.18 0.20 156.80
5 of 6Rev A1 DS090519
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD200
Preferred Assembly Instructions
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible.
The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be
applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and
ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended. For manual dis-
pense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an
oven especially set aside for epoxy curing only. If possible, the curing oven should be flushed with dry nitrogen. The gold-tin
(80% Au 20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used
depends on the leadframe material used and the particular application. The maximum time should be kept to a minimum.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter
gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter
wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependant on the
setup and application being used. Ultrasonic or thermosonic bonding is not recommended.
Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires
should be minimized especially when making RF or ground connections.
Handling Precautions
To avoid damage to the devices, care should be exercised during handling. Proper Electro-
static Discharge (ESD) precautions should be observed at all stages of storage, handling,
assembly, and testing.
ESD/MSL Rating
These devices should be treated as Class 0 (0V to 250V) as defined in JEDEC Standard No. 22-A114. Further information on
ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
Application Notes and Design Data
Application Notes and design data including S-parameters, noise parameters, and device model are available on request and
from www.rfmd.com.
Reliability
An MTTF of 4.2 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device.
Disclaimers
This product is not designed for use in any space-based or life-sustaining/supporting equipment.
Ordering Information
Delivery Quantity Ordering Code
Full Pack (100) FPD200-000
Small Quantity (25) FPD200-000SQ
Sample Quantity (3) FPD200-000S3
6 of 6 Rev A1 DS090519
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD200
