D e l i v e r i n g P O W E R E x c e l l e n c e
RELIABILITY REPORT
1/04
Power Semi conductor Devices
January 2002 - December 2003
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 IXDN0009
USA Published February 2004
IXYS Semiconductor GmbH
Edisonstrasse 15
D-68623 Lampertheim
Germany
2
QUALITY AND RELIABILITY
IXYS is committed to setting a new standard for
excellence in Power Semiconductors. Reflecting our
dedication to industry leadership in the manufac ture of
medium to high power devices , reliability has ass umed
a primary position in raw material selection, design,
and process technology.
Reliability utilizes information derived from applied
research, engineering design, analysis of field
applications and accelerated stress testing and
integrates this knowledge to optimize device design
and manufacturing processes.
All areas that impact reliability have received
considerable attention in order to achieve our goal to
be the # 1 Reliability Supplier of Power Semiconductor
products. We believe IXYS products should be the
most reliable components in your system.
We have committed significant resources to
continuously improve and optimize our device design,
wafer fab processes, assembly processes and test
capabilities. As a result of this investment, IXYS has
realized a dramatic improvement in reliability
performance on all standardized tests throughout the
product line.
Excellence in product reliability is “built-in”, not tested-
in. Moreover, it requires a total systems approach,
involving all parties: from design to raw materials to
manufacturing.
In addition to qualifying new products released to the
market, life and environmental tests are periodically
perform ed on standard products to maintain feedback
on assembly and fabrication performance to assure
product reliability. Further information on reliability of
power devices is pr ovided on pages www.ixys.com.
RELIABILITY TESTS
High Temperature Reverse Bias (HTRB)
Failure Modes: Gradual degradation of break-down
characteristics due to presence of foreign materials
and polar/ionic contaminants disturbing the electric
field termination structure.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM, IDSS,
ICES, IDRM, IRRM, VTH.
High Temperature Gate Bias (HTGB)
Failure Modes: Rupture of the gate oxide due to
localized thickness variations, structural anomalies,
particulates in the oxide, channel inversion due to
presence of mobile ions in the gate oxide.
Sensitive Parameters: IGSS, IGES,VTH, IDSS, ICES.
Temperature Cycle
Failure modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling,
causing thermal and electrical performance degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF.
Humidity Test
Failure Modes: Degradation of electrical leakage
characteristics due to m oisture penetration into plastic
packages.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM, IDSS,
ICES, IDRM, IRRM, IGSS, IGES, VTH.
Power Cycle
Failure Modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling can
cause thermal and electrical performance
degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF, IDSS,
ICES, IDRM, IRRM, BVDSS, BVCES, VDRRM, VRRM.
TERMS IN TABLES
SUMMARY TABLES 1 AND 2:
AF: acceleration fact o r
AF = exp { Ea *[ (T2 -T1) / ( T2 * T1 ) ] / k } (1)
Ea: activation energy; @ HTRB Ea = 1.0 eV
@ HTGB Ea = 0.4 eV
k: Boltzmann’s constant 8.6·10-5 eV/K
T1: abs. application junction temperature (273+Tj) K
T2: abs. test junction temperature (273+Tj) K
UCL: upper confidence limit (60%)
Total Failures @ 60% UCL:
N = r + dr (2)
r: number of failed devices
dr: additional term, depending on both r and UCL
MTTF: Mean Time To Failures = 1/Failure Rate
FIT: 1 FIT = 1 failure / 109 hrs
TABLES 3:
∆T: max Tj - min Tj during Test
DEFINITION OF FAILURE
Parametric failure means a parameter specified in
data sheet is exceeded as specified in IEC 60747-1
and the functionality of the device is not impaired.
3
Summa ry of Tables 1A - 1J: HTRB
T a bl e 1A T a bl e 1B T abl e 1C T a bl e1 D Tab l e 1E T a bl e 1F Ta b le 1G Ta bl e 1H T a bl e 1J
MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode ISOPLUS Breakover
discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Diode
Failure Rate [FIT] 125°C, 60% UCL 470 54466 5257 8154 5316 4508 2593 - 61828
Failure Rate [FIT] 90°C, 60% UCL 28 3261 315 488 318 270 155 - 3702
Total Lots Tested 71 7 311721121117 4
Total Devices Tested 2031 70 320 163 350 210 190 380 80
Total Actual 010000000
Failures 60% UCL {eq. (2)} 0.92 2.00 0.92 0.92 0.92 0.92 0.92 - 0.92
Total Equivalent Device Hours
@ 125° C {AF eq. (1)} 1959430 36720 174995 112824 173046 204077 354810 462726 14880
MTTF 125°C 60% UCL 243 2 22 14 21 25 44 - 2
(Years) 90°C 60% UCL 4060 35 363 234 359 423 735 - 31
Summa ry of Table 2A - 2 C: HTGB
T a bl e 2A T a bl e 2B T abl e 2C
MOSFET/IGBT MOSFET/IGBT ISOPLUS
discrete device *) Module
Failure Rate [FIT] 125°C, 60% UCL 722 26099 -
Failure Rate [FIT] 90°C, 60% UCL 43 1563 -
Total Lots Tested 45 5 5
Total Devices Tested 1290 50 140
Total Actual 0 0 0
Failures 60% UCL {eq. (2)} 0.92 0.92 -
Total Equivalent Device Hours
@ 125° C {AF eq. (1)} 1273360 35250 120000
MTTF 125°C 60% UCL 158 4 -
(Years) 90°C 60% UCL 2639 73 -
*) including ISOPLUS
4
Summary of Tables 3A - 3H: Power Cycle
T ab l e 3A Table 3B Table 3C Tab l e3 D Table 3E T ab l e 3F T ab l e 3G Table 3H
MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus
discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*)
T otal Lots Tested 15 2 8 8 15 8 9 8
T otal Devices Tested 347 20 80 80 250 150 170 176
Total Failures 00000000
Total Device Cycles 3580000 200000 1040000 390000 1160000 570000 1080000 1460000
Summ ary of Tables 4A - 4J: Temperature Cycle
T ab l e 4A Tab l e 4B Table 4C Tab l e4 D T ab l e 4E T ab le 4F Tab le 4G T ab l e 4H Table 4J
MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover
discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Diode
T otal Lots Tested 14 6 29 24 28 22 22 9 10
T otal Devices Tested 340 60 401 245 509 450 360 180 180
Total Failures 013132000
Total Device Cycles 76400 2700 69700 15600 40150 27400 46200 9600 16400
Summary of Tables 5A - 5H: Humidity Test
T ab l e 5A Tab l e 5C Tab l e5 D Tab l e 5E Tab l e 5F T ab l e 5G Table 5H Table 5J
MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover
discrete device *) Module Rec. Bridge*) *) Diode*) discrete device*) Diode
T otal Lots Tested 13 6 3 10 3 10 10 4
T otal Devices Tested 350 60 30 160 60 190 190 80
Total Failures 00000110
Total Device Hours 54960 10080 5040 14160 5760 15840 15840 3840
*) including ISOPLUS
5
TABLE 1A: MOSFET/I GBT sin g le device
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 IRFP260 SP0243 160 125 1000 30 0 30000
2 IRFP450 SK0224 400 125 1000 30 0 30000
3 IRFP460 SK0229 400 125 1000 30 0 30000
4 IXDA20N120AS 446 960 125 168 20 0 3360
5 IXDA20N120AS 640 960 125 1000 20 0 20000
6 IXDA20N120AS 757 960 125 1000 20 0 20000
7 IXDA20N120AS 757 960 125 1000 20 0 20000
8 IXEH40N120 539 960 125 1000 20 0 20000
9 IXER60N120 488 960 125 1000 20 0 20000
10 IXFB70N60Q2 SP0335 480 125 1000 30 0 30000
11 IXFB80N50Q2 SP0251 400 125 1000 30 0 30000
12 IXFF24N100 389 800 125 1000 10 0 10000
13 IXFH12N100F SP0130 800 125 1000 30 0 30000
14 IXFH13N50 SP0338 400 125 1000 30 0 30000
15 IXFH15N80 SP 0224 640 125 1000 30 0 30000
16 IXFH16N90Q SP 0242 720 125 1000 30 0 30000
17 IXFH17N80Q SK0322 640 125 1000 30 0 30000
18 IXFH20N60 SK0339 480 125 1000 30 0 30000
19 IXFH21N50 SK0342 400 125 1000 30 0 30000
20 IXFH21N50Q K0246E 400 125 1000 30 0 30000
21 IXFH23N60Q SK0322 480 125 1000 30 0 30000
22 IXFH24N50 K0314K 400 125 1000 30 0 30000
23 IXFH26N50 SP 0228 400 125 1000 30 0 30000
24 IXFH26N50 SP0237 400 125 1000 30 0 30000
25 IXFH26N50Q K0315H 400 125 1000 30 0 30000
26 IXFH26N50Q SK0339 400 125 1000 30 0 30000
27 IXFH26N50Q SP0308 400 125 1000 30 0 30000
28 IXFH26N60Q K0311J 480 125 1000 30 0 30000
29 IXFH28N50F SP 0151 400 125 1000 30 0 30000
30 IXFH28N50Q SP0325 400 125 1000 30 0 30000
31 IXFH32N50 SK 0224 400 125 1000 30 0 30000
32 IXFH32N50Q SK0330 400 125 1000 30 0 30000
33 IXFH32N50Q SP 0147 400 125 1000 30 0 30000
34 IXFH40N50Q SP0326 400 125 1000 30 0 30000
35 IXFH50N20 SK0325 160 125 1000 30 0 30000
36 IXFH60N20F SP 0151 160 125 1000 30 0 30000
37 IXFH66N20Q SK0306 160 125 1000 30 0 30000
38 IXFH6N100F SP 9936 800 105 1000 30 0 30000
39 IXFH6N100Q TP 0143 800 105 1000 29 0 29000
40 IXFH80N10Q SK0313 80 125 1000 30 0 30000
41 IXFH88N20Q SK0302 160 125 1000 30 0 30000
42 IXFH9N80 TK 0229 640 125 1000 30 0 30000
43 IXFK27N80 SP 0234 640 125 1000 30 0 30000
44 IXFK48N50 SP0309 400 125 1000 30 0 30000
45 IXFK55N50F SP 0216 400 125 1000 30 0 30000
46 IXFK73N30Q SP0311 240 125 1000 30 0 30000
47 IXFK90N30 SP 0244 240 125 1000 30 0 30000
48 IXFN36N100 SP 0229 800 125 1000 30 0 30000
49 IXFX27N80Q SP 0236 640 125 1000 30 0 30000
50 IXFX34N80 SP 0212 640 125 1000 30 0 30000
51 IXFX48N50Q SP0339 400 125 1000 30 0 30000
52 IXFX55N50 SP 0223 400 125 1000 30 0 30000
53 IXFX55N50F SP0305 400 125 1000 30 0 30000
54 IXKN40N60C 838 480 125 168 10 0 1680
55 IXTH41N25 SP0311 200 125 1000 30 0 30000
56 IXTH48N20 SP0315 160 125 1000 30 0 30000
57 IXTH72N20 SP0320 160 125 1000 30 0 30000
58 IXTH75N15 K0307B 120 125 1000 30 0 30000
59 IXTH75N15 SK0338 120 125 1000 30 0 30000
60 IXTK120N25 S P 0151 200 125 1000 25 0 25000
61 IXTK120N25 SP0305 200 125 1000 30 0 30000
HTRB (Tables 1A .. 1J)
6
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number or Voltage Temp. Time Sample Fai lures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
62 IXTK 180N15 SP 0151 120 125 1000 25 0 25000
63 IXTK250N10 SP0318 80 125 1000 30 0 30000
64 IXTK 62N25 SP 0150 200 125 1000 39 0 39000
65 IXTK62N25 SP0331 200 125 1000 30 0 30000
66 IXTK62N25 SP0340 200 125 1000 30 0 30000
67 IXTK62N25 SS0332 200 125 1000 30 0 30000
68 IXTK 90N15 SP 0150 120 125 1000 33 0 33000
69 IXTP3N120 K0321 800 125 1000 30 0 30000
70 IXTQ52N30P SK0342 240 125 1000 30 0 30000
71 IXTQ69N30P SK0342 240 125 1000 30 0 30000
TABLE 1B: MOSFET/IGBT Module
Date Code
# Part Number or Voltage Temp. Time Sample Fai lures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 MUBW15-12A7 392 1120 125 168 10 0 1680
2 MUBW50-12A8 390 960 125 1000 10 0 10000
3 MWI30-06A7 553 480 125 168 10 0 1680
4 MWI75-12A8 677 960 125 1000 10 0 10000
5 MWI75-12A8 677 960 125 168 10 0 1680
6 VMM300-03FP 636 240 125 168 10 0 1680
7 VMM90-09F 508 720 125 1000 10 1 10000
T ABLE 1C: Th yristor/Diode Mod u le
Date Code
# Part Number or Voltage Temp. Time Sample Fai lures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1MCC162 874 1260 125 168 10 0 1680
2 MCC162-18 732 1260 125 168 10 0 1680
3MCC21-14 396 980 125 168 10 0 1680
4 MCC250-16 652 1120 125 168 10 0 1680
5MCC26-16 796 1120 125 500 10 0 5000
6 MCC310-16 870 1120 125 168 10 0 1680
7MCC312-16 449 1120 125 168 10 0 1680
8 MCC44-16io1 592 1120 125 168 10 0 1680
9MCC56 685 1260 125 1000 10 0 10000
10 MCC56-16io1 448 1120 125 168 10 0 1680
11 MCC56-18 696 1260 125 1000 20 0 20000
12 MCC72-16 727 1120 125 168 10 0 1680
13 MCC95-16io1 598 1120 125 168 10 0 1680
14 MCC95-16io1 599 1280 125 168 10 0 1680
15 MCC95-16io1B 816 1120 125 168 10 0 1680
16 MCD162-16 564 1120 125 168 10 0 1680
17 MCD162-16io1 564 1120 125 1100 10 0 11000
18 MCD56-16io1B 809 1120 125 500 10 0 5000
19 MCO150-12io1 607 960 125 1000 10 0 10000
20 MCO150-12io1 607 840 150 168 10 0 1680
21 MDD172-16 400 1120 150 1000 10 0 10000
22 MDD172-16 400 1120 125 168 10 0 1680
23 MDD26-16 519 1120 125 168 10 0 1680
24 MDD56-16 679 1120 125 168 10 0 1680
25 MDD56-18 423 1260 125 1000 10 0 10000
26 MDD56-18 423 1260 125 1000 10 0 10000
27 MDD56-18 423 1260 125 1000 10 0 10000
28 MDD56-18 423 1280 125 1000 10 0 10000
29 MDD56-18 739 1260 125 1000 10 0 10000
30 MDD95-16 466 1120 125 168 10 0 1680
31 MDO500-22 815 1540 125 168 10 0 1680
7
TABLE 1D: Controller/Rectifier Bridge
Date Code
# Part Number or Voltage Temp. Time Sample Fai lures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 MMO75-16 761 1120 125 168 10 0 1680
2 VBO19-16DT1 794 1120 125 168 10 0 1680
3 VBO25-16A 523 1120 125 168 10 0 1680
4 VHF28-16io5 404 1120 125 1000 10 0 10000
5 VHF36-16 463 1120 125 168 10 0 1680
6 VUB120-12MO1 436 1120 125 168 3 0 504
7 VUB120-16NO2 833 960 125 1000 10 0 10000
8 VUB72-16 835 960 125 500 10 0 5000
9 VUM24-05 846 560 125 300 10 0 3000
10 VUM24-05 846 400 125 300 10 0 3000
11 VUO121-16NO1 709 1120 125 1000 10 0 10000
12 VUO34-18 422 1260 125 168 10 0 1680
13 VUO34-18 422 1260 150 1000 10 0 10000
14 VUO36-16NO8 740 1120 125 168 10 0 1680
15 VUO50-16 625 1120 125 168 10 0 1680
16 VUO86-16NO7 428 1120 125 168 10 0 1680
17 VVY40-16 700 1120 125 168 10 0 1680
TABLE 1E: FRED Date Code
# Part Number or Voltage Temp. Time Sample Fai lures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 DSEC60-02A 742 200 125 1000 20 0 20000
2 DSEC60-03AR 600 240 125 168 20 0 3360
3 DSEC60-06A 560 480 125 168 20 0 3360
4 DSEI120-06A 554 480 125 1000 20 0 20000
5 DSEI20-12A 486 960 125 168 20 0 3360
6 DSEI2x121-02A 483 160 125 168 10 0 1680
7 DSEI2x61-12B 722 960 125 1000 10 0 10000
8 DSEK60-02 465 160 125 168 20 0 3360
9 DSEP15-12CR 381 960 125 168 20 0 3360
10 DSEP15-12CR 715 960 125 168 20 0 3360
11 DSEP2x31-12A 575 960 125 168 10 0 1680
12 DSEP30-06CR 525 480 125 168 20 0 3360
13 DSEP30-06CR 525 480 150 168 20 0 3360
14 DSEP60-06A 791 480 125 168 20 0 3360
15 DSEP8-06B 552 480 125 1000 20 0 20000
16 DSEP8-06B 552 480 125 1000 20 0 20000
17 DSS17-06CR 714 600 150 168 20 0 3360
18 MEK350-02B 487 160 125 1000 10 0 10000
19 MEK350-02B 487 160 125 168 10 0 1680
20 MEK90-06F 499 480 125 168 10 0 1680
21 MEK95-06DA"E" 403 480 125 168 10 0 1680
T ABLE 1F: Schot tky Diode Date Code
# Part Number or Voltage Temp. Time Sample Fai lures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 DGS3-03AS 582 240 125 1000 20 0 20000
2 DGSK20-018A 518 144 125 168 20 0 3360
3 DSS1-40BA 789 32 100 1000 20 0 20000
4 DSS17-06CR 714 600 150 168 20 0 3360
5 DSS2-40BB 790 32 100 1000 20 0 20000
6 DSS2x160-01A 430 100 125 168 10 0 1680
7
DSSK28-01A
513
100
150
168
20
0
3360
8
DSSK50-015A
574
150
150
1000
20
0
20000
9
DSSK70-008A
501
80
125
1000
20
0
20000
10
DSSK80-0008D
500
8
100
1000
20
0
20000
11
DSSK80-006B
676
50
100
168
10
0
1680
12
DSSK80-006B
676
50
100
168
10
0
1680
8
TABLE 1G: Thyristor/Diode single device
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1CS22-12 707 840 125 1000 20 0 20000
2 CS30-16io1 417 1120 125 168 20 0 3360
3 CS30-16io1 556 1120 125 1000 10 0 10000
4 CS30-16io1 556 1120 125 1000 10 0 10000
5 CS60-14io1 594 980 125 1000 30 0 30000
6 DSA35-18 407 1260 150 168 10 0 1680
7 DSAI75-16B 668 1120 150 168 10 0 1680
8 DSI45-16AR 823 1120 150 168 20 0 3360
9 DSIK45-16AR 608 1120 150 1000 20 0 20000
10 DSP25-16A 877 1120 150 168 20 0 3360
11 DSP8-12AC 529 840 150 1000 20 0 20000
TABLE 1H: ISOPLUS Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 DSEC60-03AR 600 240 125 168 20 0 3360
2 DSEK60-02 465 160 125 168 20 0 3360
3 DSEP15-12CR 381 960 125 168 20 0 3360
4 DSEP15-12CR 715 125 168 20 0 3360
5 DSEP30-06CR 525 480 150 168 20 0 3360
6 DSEP30-06CR 525 480 125 168 20 0 3360
7 DSI45-16AR 823 1120 150 168 20 0 3360
8 DSIK45-16AR 608 1120 150 1000 20 0 20000
9 DSP8-12AC 529 840 150 1000 20 0 20000
10 DSS17-06CR 714 600 150 168 20 0 3360
11 IXER60N120 488 960 125 1000 20 0 20000
12 IXFF24N100 389 800 125 1000 10 0 10000
13 IXFX27N80Q SP 0236 640 125 1000 30 0 30000
14 IXFX34N80 SP 0212 640 125 1000 30 0 30000
15 IXFX48N50Q SP0339 400 125 1000 30 0 30000
16 IXFX55N50 SP 0223 400 125 1000 30 0 30000
17 IXFX55N50F SP0305 400 125 1000 30 0 30000
TABLE 1J: Breakover DiodeDate Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 IXBOD1-06 521 480 125 168 20 0 3360
2 IXBOD1-07 453 560 125 240 20 0 4800
3 IXBOD1-09 743 720 125 168 20 0 3360
4 IXBOD1-10 868 800 125 168 20 0 3360
9
HTGB (Ta bles 2A .. 2C)
T ABLE 2A: MOSFET/IGBT single device
Date Code
# Part Number or Voltage Temp. Time Sample Fai lures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 IRFP260 SP0243 16 125 1000 30 0 30000
2 IRFP450 SK0224 16 125 1000 30 0 30000
3 IRFP460 SK0229 16 125 1000 30 0 30000
4 IXBH9N160G 440 16 125 1000 20 0 20000
5 IXDN55N120D1 596 16 125 168 10 0 1680
6 IXFB38N100Q2 SP0320 16 125 1000 30 0 30000
7 IXFB80N50Q2 SP0251 16 125 1000 30 0 30000
8 IXFH12N100F SP0130 16 125 1000 30 0 30000
9 IXFH13N50 SP0338 16 125 1000 30 0 30000
10 IXFH15N80 SP 0224 16 125 1000 30 0 30000
11 IXFH16N90Q SP 0242 16 125 1000 30 0 30000
12 IXFH20N60 SK0339 16 125 1000 30 0 30000
13 IXFH21N50 SK0342 16 125 1000 30 0 30000
14 IXFH21N50Q K0246E 16 125 1000 30 0 30000
15 IXFH24N50 K0314K 16 125 1000 30 0 30000
16 IXFH26N50 SP0237 16 125 1000 30 0 30000
17 IXFH26N50Q K0315H 16 125 1000 30 0 30000
18 IXFH26N50Q SK0339 16 125 1000 30 0 30000
19 IXFH26N50Q SP0308 16 125 1000 30 0 30000
20 IXFH26N60Q K0311J 16 125 1000 30 0 30000
21 IXFH32N50 SK 0224 16 125 1000 30 0 30000
22 IXFH32N50Q SK0330 16 125 1000 30 0 30000
23 IXFH32N50Q SP 0147 16 125 1000 30 0 30000
24 IXFH50N20 SK0325 16 125 1000 30 0 30000
25 IXFH80N10Q SK0313 16 125 1000 30 0 30000
26 IXFK27N80 SP 0234 16 125 1000 30 0 30000
27 IXFK48N50 SP0309 16 125 1000 30 0 30000
28 IXFK55N50F S P 0216 16 125 1000 30 0 30000
29 IXFK90N30 SP 0244 16 125 1000 30 0 30000
30 IXFN36N100 S P 0229 16 125 1000 30 0 30000
31 IXFX27N80Q SP 0236 16 125 1000 30 0 30000
32 IXFX34N80 SP 0212 16 125 1000 30 0 30000
33 IXFX48N50Q SP0339 16 125 1000 30 0 30000
34 IXFX4N100Q TP0149 16 125 1000 30 0 30000
35 IXKN40N60C 838 20 125 168 10 0 1680
36 IXLF19N250 577 30 125 1000 20 0 20000
37 IXTH41N25 SP0311 16 125 1000 30 0 30000
38 IXTH48N20 SP0315 16 125 1000 30 0 30000
39 IXTH72N20 SK0306 16 125 1000 30 0 30000
40 IXTH75N15 K0307B 16 125 1000 30 0 30000
41 IXTH75N15 SK0338 16 125 1000 30 0 30000
42 IXTK120N25 SP0305 16 125 1000 30 0 30000
43 IXTK250N10 SP0318 16 125 1000 30 0 30000
44 IXTQ52N30P SK0342 16 125 1000 30 0 30000
45 IXTQ69N30P SK0342 16 125 1000 30 0 30000
TABLE 2B: MOSFET/IGBT Module
Date Code
# Part Number or Voltage Temp. Time Sample Fai lures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 MUBW25-12A7 496 16 150 168 10 0 1680
2 MUBW25-12A7 496 16 125 1685 10 0 16850
3 MUBW30-06A7 391 16 150 168 10 0 1680
4 MUBW30-06A7 391 16 125 168 10 0 1680
5 VMM300-03FP 636 16 125 1000 10 0 10000
10
TABLE 2C: ISOPLUS Date Code
# Part Number or Voltage Temp. Time Sample Fai lures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 IXLF19N250 577 30 125 1000 20 0 20000
2 IXF X27N80Q SP 0236 16 125 1000 30 0 30000
3 IXF X34N80 SP 0212 16 125 1000 30 0 30000
4 IXFX48N50Q SP0339 16 125 1000 30 0 30000
5 IXFX4N100Q TP0149 16 125 1000 30 0 30000
POWER CYCLE (Tables 3A . .3H)
TABLE 3A: MOSFET/IGBT single device
Date Code Number
# Part Number or Tj(max) ∆Τ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1IXBH9N160G 440 125 80 5000 20 0 100000
2IXFB70N60Q2 SP0335 125 100 10000 24 0 240000
3IXFH12N100F SP0130 125 100 10000 24 0 240000
4IXFH26N50 SP 0228 125 100 10000 24 0 240000
5IXFH26N50Q K0315H 125 100 10000 24 0 240000
6IXFH26N60Q K0311J 125 100 10000 24 0 240000
7IXFH50N20 SK0325 125 100 10000 24 0 240000
8IXFK90N30 SP 0244 125 100 10000 24 0 240000
9IXFN55N50 558 125 80 24000 15 0 360000
10 IXFX27N80Q SP 0236 125 100 10000 24 0 240000
11 IXFX48N50Q SP0339 125 100 10000 24 0 240000
12 IXFX4N100Q TP0149 125 100 10000 24 0 240000
13 IXFX55N50 SP 0223 125 100 10000 24 0 240000
14 IXTQ52N30P SK0342 125 100 10000 24 0 240000
15 IXTQ69N30P SK0342 125 100 10000 24 0 240000
TABLE 3B: MOSFET/IGBT Module
Date Code Number
# Part Number or Tj(max) ∆Τ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1MUBW50-12A8 390 125 80 10000 10 0 100000
2VWI6-12P1 433 125 80 10000 10 0 100000
T ABL E 3C: Thyristo r/Diode Module
Date Code Number
# Part Number or Tj(max) ∆Τ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Si ze
1 MCC200 747 125 80 20000 10 0 200000
2 MCC310-12 507 125 80 10000 10 0 100000
3 MCC56 685 125 80 35000 10 0 350000
4 MCC56-16io1 820 125 80 10000 10 0 100000
5 MCO150-12io1 607 125 80 4000 10 0 40000
6 MDD56-12 532 125 80 10000 10 0 100000
7 MDD95-12 452 125 80 10000 10 0 100000
8 VCO180-16io7 526 125 80 5000 10 0 50000
T ABLE 3D: Controller, Rectifier Bridge
Date Code Number
# Part Number or Tj(max) ∆Τ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Si ze
1 VBO125-16NO7 741 125 80 2000 10 0 20000
2 VHF28-14 457 125 80 5000 10 0 50000
3 VHF28-16io5 404 125 80 10000 10 0 100000
4 VUE50-12 717 125 80 5000 10 0 50000
5 VUO110-16NO7 565 125 80 8000 10 0 80000
6 VUO110-16NO7 565 125 80 2000 10 0 20000
7 VUO25-16NO8 434 125 80 2000 10 0 20000
8 VUO34-16 516 125 80 5000 10 0 50000
11
TABLE 3E: FRED
Date Code Number
# Part Number or Tj(max) ∆Τ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Si ze
1 DSEC30-02A 795 125 80 4000 20 0 80000
2 DSEC60-06A 664 150 105 2000 20 0 40000
3 DSEE15-12CC 394 125 80 10000 20 0 200000
4 DSEI120-06A 554 130 85 4000 20 0 80000
5 DSEI2x121-02A 483 125 80 2000 10 0 20000
6 DSEI2x61-12B 722 125 80 5000 10 0 50000
7 DSEK60-06A 720 150 105 2000 20 0 40000
8 DSEP15-12CR 715 125 80 5000 20 0 100000
9 DSEP29-06A 468 150 105 4000 20 0 80000
10 DSEP29-06B 474 150 105 2000 20 0 40000
11 DSEP8-06B 552 150 105 4000 20 0 80000
12 DSS17-06CR 714 150 105 5000 20 0 100000
13 MEK350-02 485 125 80 10000 10 0 100000
14 MEK350-02 485 125 80 10000 10 0 100000
15 MEO450-12DA "L" 639 125 80 5000 10 0 50000
TABL E 3F : Sch ot t ky Dio d e
Date Code Number
# Part Number or Tj(max) ∆Τ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 DGS4-025A 471 145 100 4000 20 0 80000
2 DSS17-06CR 714 150 105 5000 20 0 100000
3 DSS2x41-01A 409 125 80 5000 10 0 50000
4 DSS2x41-01A 409 125 80 5000 10 0 50000
5 DSS2x61-0045A 514 125 80 5000 10 0 50000
6 DSSK28-01A 513 125 80 2000 40 0 80000
7 DSSK50-015A 574 125 80 6000 20 0 120000
8 DSSK70-0015B 585 113 80 2000 20 0 40000
TABLE 3G : T hyri s tor/Di o d e si n g le device
Date Code Number
# Part Number or Tj(max) ∆Τ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 CS22-12 707 125 80 4000 20 0 80000
2 CS45-16io1R 464 125 80 5000 20 0 100000
3 CS9444L 602 125 80 6000 30 0 180000
4 CS9444LD 601 125 80 6000 30 0 180000
5 DS1-12D 470 150 105 20000 20 0 400000
6 DSA17-16A 534 125 80 2000 10 0 20000
7 DSA35-18 407 150 105 2000 10 0 20000
8 DSA75-16B 718 150 105 2000 10 0 20000
9 DSI45-12A 613 125 80 4000 20 0 80000
T ABLE 3H: ISOPLUS
Date Code Number
# Part Number or Tj(max) ∆Τ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 CS45-16io1R 464 125 80 5000 20 0 100000
2 DSEE15-12CC 394 125 80 10000 20 0 200000
3 DSEP15-12CR 715 125 80 5000 20 0 100000
4 DSS17-06CR 714 150 105 5000 20 0 100000
5 IXFX2 7N8 0Q SP 0236 125 100 10000 24 0 240000
6 IXFX48N50Q SP0339 125 100 10000 24 0 240000
7 IXFX4N100Q TP0149 125 100 10000 24 0 240000
8 IXFX5 5N5 0 SP 0223 125 100 10000 24 0 240000
12
TEMPERATURE CYCLE (Tables 4A ..4J)
TABLE 4A: MOSFET/IGBT single device
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 FMM150-0075P 566 -55 150 250 20 0 5000
2 FMM150-0075P 566 -55 150 40 20 0 800
3 IXBH9N140G 542 -55 150 50 20 0 1000
4 IXDH20N120D1 420 -55 150 20 20 0 400
5
IXFC26N50Q
648
-45
150
250
30
0
7500
6 IXFF24N100 389 -55 150 50 20 0 1000
7 IXFF55N50 623 -45 150 250 30 0 7500
8 IXFG55N50 622 -45 150 100 30 0 3000
9 IXFK90N30 IX9X -65 150 500 30 0 15 000 -65, 15 0°C / 10min
10 IXFL55N50 621 -45 150 100 30 0 3000
11 IXFN80N50 693 -40 150 100 20 0 2000
12 IXKN40N60C 838 -40 150 20 10 0 200
13 IXTK120N2 5 I X9 0 - 65 150 50 0 30 0 15000 -65, 15 0° C / 10mi n
14 IXTK80N25 IX81 -65 150 500 30 0 15 000 -65, 150°C / 10min
TABLE 4B: MOSFET/I GBT Module
Date Code Low High Number
# Part Number or Temp. T emp. of Sample Failur es Devic e Cyc l e s Rem a rk
Test # [°C] [°C] Cycles Size
1 MUBW25-12A7 496 -40 150 50 10 0 500
2 MUBW30-06A7 391 -40 150 50 10 0 500
3 MWI30-06A7 553 -40 150 50 10 0 500
4 VMM90-09F 425 -40 150 50 10 0 500
5 VWI6-12P1 433 -40 150 20 10 0 200
6 VWM350-0075 590 -40 150 50 10 1 500
T ABL E 4C: Thyristo r/Diode Module
Date Code Low High Number
# Part Number or Temp. T emp. of Sample Failur es Devic e Cyc l e s Rem a rk
Test # [°C] [°C] Cycles Size
1MCC 162 847 - 40 150 100 10 0 1000
2MCC162 0227 -40 150 50 10 0 500
3MCC21-14 725 -40 150 100 10 0 1000
4MCC26 495 -40 150 500 12 1 6000
5MCC26-14io8 723 -40 150 100 10 0 1000
6MCC44 495 -40 150 500 20 0 10000
7MCC44 673 -40 150 150 10 0 1500
8MCC44-12 469 -40 150 50 10 0 500
9MCC56 685 -40 150 300 20 0 6000
10 MCC56 685 -40 150 100 20 0 2000
11 MCC56-1 697 -40 150 200 10 0 2000
12 MCC56-1 698 -40 150 200 10 0 2000
13 MCC56-1 0307 -40 150 350 20 0 7000
14 MCC56-12 754 -40 150 100 10 1 1000
15 MCC56-12 784 -40 150 100 10 1 1000
16 MCC56-14 405 -40 150 50 10 0 500
17 MCC56-14 785 -40 150 100 10 0 1000
18 MCC56-14 786 -40 150 100 10 1 1000
19 MCC56-16 811 -40 150 100 30 0 3000
20 MCC56-16 812 -40 150 100 30 0 3000
21 MCC56-8 699 -40 150 200 10 0 2000
22 MCC72-16 386 -40 150 50 10 0 500
23 MCD162-16 803 -40 150 100 10 0 1000
24 MCD56-16 783 -40 150 100 10 0 1000
25 MCO150-12io1 607 -40 150 50 10 0 500
26 MDD172 0329 -40 150 50 30 0 1500
27 MDD26-14 724 -40 150 50 10 0 500
28 MDD56 495 -40 150 500 20 0 10000
29 MDD56 738 -40 150 300 9 1 2700
30 MDD56 738 -40 150 290 10 1 2900
31 MDD56-16 517 -40 150 50 10 0 500
32 MDD95-08 637 -40 150 50 10 0 500
13
TABLE 4E: FRED
Date Code Low High Number
# Part Number or Temp. T emp. of Sample Failur es Devic e Cyc l e s Rem a rk
Test # [°C] [°C] Cycles Size
1 DSEC30-06A 484 -55 150 50 29 0 1450
2 DSEC60-02A 782 -55 150 200 20 0 4000
3 DSEC60-02AQ 839 -55 150 100 20 0 2000
4 DSEC60-03A 681 -55 150 100 20 0 2000
5 DSEC60-03AR 600 -55 150 20 20 0 400
6 DSEI120-06A 554 -40 150 350 20 0 7000
7 DSEI2x121-02A 483 -40 150 10 10 0 100
8 DSEI2x61-12B 722 -40 150 50 10 0 500
9 DSEI60-06A 705 -40 150 50 20 1 1000
10 DSEI8-06A 778 -40 150 100 40 0 4000
11 DSEK60-02 465 -40 150 20 20 0 400
12 DSEK60-06A 720 -40 150 50 20 0 1000
13 DSEP130-06A 616 -55 150 50 20 1 1000
14 DSEP130-06A 616 -55 150 50 20 0 1000
15 DSEP15-12CR 715 -55 150 100 20 0 2000
16 DSEP15-12CR 381 -55 150 20 20 0 400
17 DSEP29-06A 468 -55 150 50 20 0 1000
18 DSEP29-06B 767 -55 150 100 20 0 2000
19 DSEP29-06B 474 -55 150 20 20 0 400
20 DSEP2x31-12A 575 -40 150 10 10 0 100
21 DSEP30-06B 831 -55 150 150 20 0 3000
22 DSEP30-06CR 525 -55 150 20 20 0 400
23 DSEP60-06A 791 -55 150 100 20 0 2000
24 MEK250-12 384 -40 150 50 10 0 500
25 MEK250-12 384 -40 150 50 10 0 500
26 MEK350-02B 651 -40 150 50 10 0 500
27 MEK350-02B 0303 -40 150 100 10 1 1000
28 MEO450-12I 438 -40 150 50 10 0 500
TABL E 4F : Sch ot t ky Dio d e
Date Code Low High Number
# Part Number or Temp. T emp. of Sample Failur es Devic e Cyc l e s Rem a rk
Test # [°C] [°C] Cycles Size
1 DGS19-025AS 583 -55 150 200 20 0 4000
2 DGSK20-018A 518 -55 150 20 20 0 400
3 DGSK24-025CS 763 -55 150 100 20 0 2000
4 DGSK24-025CS 763 -55 150 100 20 0 2000
5 DSS1-40BA 789 -55 150 100 20 1 2000
6 DSS2-40BB 790 -55 150 100 20 0 2000
7 DSS2x160-01A 430 -40 150 10 10 0 100
8 DSS2x200-0008D 458 -40 150 100 10 0 1000
9 DSS2x61-0045A 514 -40 150 10 10 0 100
10 DSS81-0045 744 -40 150 10 40 0 400
11 DSS81-0045B 744 -40 150 10 40 0 400
12 DSSK20-0045AM 854 -55 150 100 20 0 2000
13 DSSK28-01A 513 -55 150 20 20 0 400
14 DSSK28-01AS 442 -40 150 20 20 0 400
15 DSSK28-01AS 442 -55 150 120 20 0 2400
16 DSSK28-01AS 442 -55 150 20 20 0 400
17 DSSK50-015A 574 -55 150 50 20 0 1000
18 DSSK50-01A 665 -55 150 50 20 0 1000
19 DSSK70-0015B 585 -55 150 20 20 0 400
20 DSSK80-0008D 489 -55 150 50 20 1 1000
21 DSSK80-006B 729 -55 150 100 20 0 2000
22 DSSK80-006B 729 -55 150 100 20 0 2000
14
TABLE 4G : T hyri s tor/Di o d e si n g le device
Date Code Low High Number
# Part Number or Temp. T emp. of Sample Failur es Devic e Cyc l e s Rem a rk
Test # [°C] [°C] Cycles Size
1 CS22-12 707 -40 150 50 20 0 1000
2 CS23-12io2 504 -40 150 20 10 0 200
3 CS30-16io1 556 -40 150 350 20 0 7000
4 CS30-16io1 556 -40 150 350 20 0 7000
5 CS30-16io1 382 -55 150 50 20 0 1000
6 CS35-14io4 825 -40 150 20 10 0 200
7 CS45 687 -40 150 150 20 0 3000
8 CS45 687 -40 150 50 20 0 1000
9 CS9444L 602 -55 150 250 30 0 7500
10 CS9444LD 601 -55 150 250 30 0 7500
11 DSA17-16A 534 -40 150 20 10 0 200
12 DSA9-16F 704 -40 150 20 10 0 200
13 DSAI35-16A 735 -40 150 20 10 0 200
14 DSAI75-18B 439 -40 150 20 10 0 200
15 DSI45-16 764 -40 150 100 10 0 1000
16 DSI45-16 764 -40 150 100 10 0 1000
17 DSI45-16AR 823 -40 150 50 20 0 1000
18 DSI75-04D 853 -40 150 50 10 0 500
19 DSI75-04D 853 -40 150 50 10 0 500
20 DSIK45-16AR 608 -40 150 100 20 0 2000
21 DSP45-16AR 645 -40 150 100 20 0 2000
22 DSP8-08S 758 -40 150 100 20 0 2000
T ABLE 4H: ISOPLUS
Date Code Low High Number
# Part Number or Temp. T emp. of Sample Failur es Devic e Cyc l e s Rem a rk
Test # [°C] [°C] Cycles Size
1 DSEC60-03AR 600 -55 150 20 20 0 400
2 DSEK60-02 465 -40 150 20 20 0 400
3 DSEP15-12CR 381 -55 150 20 20 0 400
4 DSEP15-12CR 715 -55 150 100 20 0 2000
5 DSEP30-06CR 525 -55 150 20 20 0 400
6 DSI45-16AR 823 -40 150 50 20 0 1000
7 DSIK45-16AR 608 -40 150 100 20 0 2000
8 DSP45-16AR 645 -40 150 100 20 0 2000
9 IXFF24N100 389 -55 150 50 20 0 1000
TABLE 4J: Brea kover Dio de
Date Code Low High Number
# Part Number or Temp. T emp. of Sample Failur es Devic e Cyc l e s Rem a rk
Test # [°C] [°C] Cycles Size
1 IXBOD1-06 521 -40 150 20 20 0 400
2 IXBOD1-07 453 -40 150 30 20 0 600
3 IXBOD1-07 453 -40 150 20 20 0 400
4 IXBOD1-07 597 -40 150 50 10 0 500
5 IXBOD1-08 550 -40 150 200 20 0 4000
6 IXBOD1-08 550 -40 150 200 20 0 4000
7 IXBOD1-08 612 -40 150 200 20 0 4000
8 IXBOD1-09 597 -40 150 50 10 0 500
9 IXBOD1-09 743 -40 150 50 20 0 1000
10 IXBOD1-10 868 -40 150 50 20 0 1000
15
HUMIDITY TEST (Tables 5A ..5H)
TABLE 5A: MO SF ET/ IGB T sing le device
Date Code
# P ar t Nu mbe r o r T e mp. R e l. H. Time S amp le F ail u re s Device Hours Re mar k
Test # [°C] [%] [hrs] Size [hrs]
1FMM150-0075P 566 85 85 168 20 0 3360
2FMM150-0075P 566 85 85 168 20 0 3360
3IXDN75N120 482 121 100 48 20 0 960
4IXEH40N120 539 121 100 96 20 0 1920
4IXFB80N50F 647 121 100 168 30 0 5040
5IXFC26N50Q 648 121 100 168 30 0 5040
6IXFF55N50 623 121 100 168 30 0 5040
7IXFG55N50 622 121 100 168 30 0 5040
7IXFL55N50 621 121 100 168 30 0 5040
8IXTK110N25 IX90 121 100 168 30 0 5040
9IXTK120N25 IX90 121 100 168 30 0 5040
10 IXTK80N25 IX81 121 100 168 30 0 5040
11 IXTK90N30 IX9X 121 100 168 30 0 5040
TABLE 5C: Thyristor/Diode Module
Date Code
# P ar t Nu mbe r o r T e mp. R e l. H. Time S amp le F ail u re s Device Hours Re mar k
Test # [°C] [%] [hrs] Size [hrs]
1MCC132-14 589 85 85 168 10 0 1680
2MCC250-14 387 85 85 168 10 0 1680
3MCC26-16 796 85 85 168 10 0 1680
4MCC56 631 85 85 168 10 0 1680
5MCC95-16io1 821 85 85 168 10 0 1680
6MCD56-12io1 414 85 85 168 10 0 1680
T ABLE 5D: Controller, Rectifier Bridge
Date Code
# P ar t Nu mbe r o r T e mp. R e l. H. Time S amp le F ail u re s Device Hours Re mar k
Test # [°C] [%] [hrs] Size [hrs]
1 VUM24-05 846 85 85 168 10 0 1680
2 VUO36-16NO8 435 85 85 168 10 0 1680
3 VWO85-14 777 85 85 168 10 0 1680
TABLE 5E: FRED Date Code
# P ar t Nu mbe r o r T e mp. R e l. H. Time S amp le F ail u re s Device Hours Re mar k
Test # [°C] [%] [hrs] Size [hrs]
1 DSEC30-02A 795 121 100 48 20 0 960
2 DSEC60-02AQ 839 121 100 96 20 0 1920
3 DSEI2x101-06 413 121 100 48 10 0 480
4 DSEP130-06A 616 121 100 96 20 0 1920
5 DSEP130-06A 616 121 100 96 20 0 1920
6 DSEP2x91-06A 787 121 100 48 20 0 960
7 DSEP30-06CR 525 121 48 20 0 960
8 MEK250/12DA 429 85 85 168 10 0 1680
9 MEK300-06D 399 85 85 168 10 0 1680
10 MEK350-02DA 793 85 85 168 10 0 1680
TABL E 5F : Sch ot t ky Dio d eDate Code
# P ar t Nu mbe r o r T e mp. R e l. H. Time S amp le F ail u re s Device Hours Re mar k
Test # [°C] [%] [hrs] Size [hrs]
1 DGS11-025C 807 121 100 96 20 0 1920
2 DGSK24-025CS 763 121 100 96 20 0 1920
3 DGSK24-025CS 763 121 100 96 20 0 1920
16
TABLE 5G : T hyri s tor/Di o d e si n g le device
Date Code
# P ar t Nu mbe r o r T e mp. R e l. H. Time S amp le F ail u re s Device Hours Re mar k
Test # [°C] [%] [hrs] Size [hrs]
1 CS30-16io1 417 121 100 48 20 0 960
2 CS45 687 121 100 96 20 0 1920
3 CS45 687 121 100 96 20 1 1920
4 CS45 687 121 100 96 20 0 1920
5 DSI45-16 764 121 100 48 10 0 480
6 DSI45-16AR 823 121 100 48 20 0 960
7 DSP25-16A 388 121 100 96 20 0 1920
8 DSP8-08S 758 121 100 96 20 0 1920
9 DSP8-08S 758 121 100 96 20 0 1920
10 DSP8-08S 758 121 100 96 20 0 1920
T ABLE 5H: ISOPLUS Date Code
# P ar t Nu mbe r o r T e mp. R e l. H. Time S amp le F ail u re s Device Hours Re mar k
Test # [°C] [%] [hrs] Size [hrs]
1 DSEP30-06CR 525 121 48 20 0 960
2 DSI45-16AR 823 121 100 48 20 0 960
3 IXFC26N50Q 648 121 100 168 30 0 5040
4 IXFF24N 100 389 121 10 0 96 20 1 1920 I_dss@ 96 hr
5 IXFF24N 100 389 121 10 0 96 20 1 1920 I_dss@ 96 hr
6 IXFF55N50 623 121 100 168 30 0 5040
TABLE 5J: Brea kover di o de
Date Code
# P ar t Nu mbe r o r T e mp. R e l. H. Time S amp le F ail u re s Device Hours Re mar k
Test # [°C] [%] [hrs] Size [hrs]
1 IXBOD1-06 567 121 100 48 20 0 960
2 IXBOD1-07 481 121 100 48 20 0 960
3 IXBOD1-09 743 121 100 48 20 0 960
4 IXBOD1-10 868 121 100 48 20 0 960
