Ordering number : ENA1906A TF262TH N-Channel JFET http://onsemi.com 20V, 140 to 350A, 0.95mS, VTFP Features * * * * * Low output noise voltage : VNO= -112dB typ. (VCC=2V, RL=2.2k, Cin=5pF) Ultrasmall package facilitates miniaturization in end products : 1.4mm x 1.2mm x 0.34mm Especially suited for use in electret condenser microphone for audio equipments and telephones Adoption of FBET process Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Gate to Drain Voltage Conditions Ratings Unit VGDO IG Gate Current Drain Current ID PD Allowable Power Dissipation Junction Temperature Tj Storage Temperature Tstg --20 V 10 mA 1 mA 100 mW 150 C --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7031-001 * Package : VTFP * JEITA, JEDEC : SC-106A * Minimum Packing Quantity : 8,000 pcs./real TF262TH-4-TL-H TF262TH-5-TL-H Top View 0.2 1.4 Packing Type: TL Marking 0.25 1.2 0.8 2 1 0.2 0.2 0.1 L LOT No. LOT No. 3 R A N K TL 0.34 0.45 Electrical Connection 3 0.07 0.07 Bot t om View 1 : Drain 2 : Source 3 : Gate 1 2 VTFP Semiconductor Components Industries, LLC, 2013 December, 2013 D1813 TKIM/D2210GB TKIM TC-00002548 No.A1906-1/5 TF262TH Electrical Characteristics at Ta=25C Parameter Symbol Gate to Drain Breakdown Voltage Cutoff Voltage Drain Current Ratings Conditions min V(BR)GDO VGS(off) IDSS IG=--100A --20 VDS=2V, ID=1A --0.2 VDS=2V, VGS=0V 140* Forward Transfer Admittance | yfs | VDS=2V, VGS=0V, f=1kHz Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS=2V, VGS=0V, f=1MHz VDS=2V, VGS=0V, f=1MHz typ Unit max V --0.5 0.5 --1.0 V 350* A 0.95 mS 3.5 pF 0.65 pF [Ta=25C, VCC=2.0V, RL=2.2k, Cin=5pF, See specified Test Circuit.] Voltage Gain GV VIN=10mV, f=1kHz --1.5 Reduced Voltage Characteristic GVV VIN=10mV, f=1kHz, VCC=2.0V 1.5V --0.8 Frequency Characteristic Gvf f=1kHz to 110Hz Total Harmonic Distortion THD Output Noise Voltage VNO VIN=30mV, f=1kHz VIN=0V, A Curve dB --2.0 dB --1.0 dB 0.5 % --112 dB * : The TF262TH is classified by IDSS as follows : (unit : A) Marking Rank IDSS L4 4 140 to 240 L5 5 210 to 350 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2k VCC=2.0V VCC=1.5V 33F + 5pF VTVM V THD OSC Ordering Information Device TF262TH-4-TL-H TF262TH-5-TL-H Package Shipping memo VTFP 8,000pcs./reel Pb-Free and Halogen Free ID -- VDS 300 ID -- VGS 400 VGS=0V VDS=2V 350 100 --0.2V 50 --0.3V 2 3 0 A 35 0 100 A 50 0 1 150 15 --0.4V 0 200 0 A 150 250 S= --0.1V 300 25 200 ID S Drain Current, ID -- A Drain Current, ID -- A 250 4 5 Drain to Source Voltage, VDS -- V IT16225 0 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 Gate to Source Voltage, VGS -- V --0.1 0 IT16226 No.A1906-2/5 TF262TH ID -- VGS 400 Forward Transfer Admittance, | yfs | -- mS Drain Current, ID -- A 350 300 250 200 C 75 C = Ta 25 150 100 C 5 --2 50 0 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 Gate to Source Voltage, VGS -- V 0.9 0.8 0.7 150 200 250 300 350 Drain Current, IDSS -- A 400 IT16228 Ciss -- VDS VGS=0V f=1MHz 7 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V 1.0 10 0.7 0.6 0.5 0.4 5 3 2 0.3 0.2 100 150 200 250 300 350 Drain Current, IDSS -- A 1.0 0.1 400 --0.5 5 Voltage Gain, GV -- dB --1.0 3 2 1.0 7 5 3 3 5 7 2 1.0 3 5 Drain to Source Voltage, VDS -- V VGS=0V f=1MHz 7 2 IT16229 Crss -- VDS 10 Reverse Transfer Capacitance, Crss -- pF 1.1 IT16227 VDS=2V ID=1A --1.5 7 10 IT16230 GV -- IDSS GV : VCC=2V VIN=10mV f=1kHz RL=2.2k Cin=5pF IDSS : VDS=2V --2.0 --2.5 --3.0 2 0.1 0.1 2 3 5 7 1.0 2 3 5 Drain to Source Voltage, VDS -- V --3.5 100 7 10 IT16231 0A Voltage Gain, GV -- dB 150A --4 --6 GV : VIN=10mV f=1kHz RL=2.2k Cin=5pF --8 --10 0 1 2 3 4 Supply Voltage, VCC -- V 250 5 300 0 150A 250A --2 --4 --6 --8 GV : VCC=2V VIN=10mV f=1kHz RL=2.2k --12 --14 IT16233 400 IT16232 350A I DSS= --10 6 350 GV -- Cin 2 250A --2 200 4 I DSS=35 0 150 Drain Current, IDSS -- A GV -- VCC 2 Voltage Gain, GV -- dB VDS=2V VGS=0V f=1kHz 0.6 100 0 VGS(off) -- IDSS 0.8 | yfs | -- IDSS 1.2 VDS=2V 0 2 4 6 8 10 12 Electret Capacitance, Cin -- pF 14 16 IT16234 No.A1906-3/5 GVV -- IDSS --0.5 --1.0 --1.5 --2.0 GVV : VCC=2V1.5V VIN=10mV f=1kHz RL=2.2k Cin=5pF IDSS : VDS=2V --2.5 100 150 200 300 350 Total Harmonic Distortion, THD -- % 7 5 3 A =150 I DSS 250 2 A 350 1.0 7 A 5 3 2 0 400 THD : VCC=2V VIN=30mV f=1kHz RL=2.2k Cin=5pF IDSS : VDS=2V 0.6 50 0.4 0.2 100 150 200 Input Voltage, VIN -- mV IT16235 THD -- IDSS 0.8 0 100 THD : VCC=2V f=1kHz RL=2.2k Cin=5pF 0.1 250 Drain Current, IDSS -- A 1.0 THD -- VIN 10 Total Harmonic Distortion, THD -- % 0 IT16236 PD -- Ta 120 Allowable Power Dissipation, PD -- mW Reduced Voltage Characteristic, GVV -- dB TF262TH 100 80 60 40 20 0 150 200 250 300 Drain Current, IDSS -- A 350 400 IT16237 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT16238 No.A1906-4/5 TF262TH Outline Drawing TF262TH-4-TL-H, TF262TH-5-TL-H Land Pattern Example Mass (g) Unit 0.0012 mm * For reference Unit: mm 1.1 0.4 0.5 0.45 0.45 0.45 0.45 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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