SEMICONDUCTOR Sanne TECHNICAL DATA 2N4416A. N-Channel, Small-Signal Field Effect Transistor MAXIMUM RATINGS Rating Symbot Value Unit Drain-Source Voltage Vos 35 Vde Drain-Gate Voltage VoG 35 Vde Gate-Source Voltage Vas -35 Vde Gate Current Ic 10 mAdc Storage Temperature Range Tstg ~65 to +200 C Power Dissipation @ Ta = 25C Pr 300 mw CASE 20-03, STYLE 1 Derate above 25C ia mWPC TO-2OGAF (0-72) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteriatic Symbol Min Max | Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage ViBR)GSS 35 Vde (ig = 1.0 pAde, Vag . 0) Gate Reverse Current lass (Vas = -20 Vde, Vog = 0) 04 nAdc (VGg = -20 Vdc, Vpg = 0, Ta = 150C > 04 wAde Gate Source Cutoff Voltage Vasiott) -2.5 -6.0 Vde (Ip = 1.0 nAde, Vos = 15 Vdc) Gate Source Voltage Vos -1.0 -5.5 Vdc (Ip = 0.5 mAde, Vpg = 15 Vdc} Gate-Source Forward Voltage Vase 1.0 Vde (lg = 1.0 mAdc, Vos = 0) (contausd) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic | Symbol | Min Unit ON CHARACTERISTICS Zero-Gate Voltage Drain Current(1) (Vps = 15 Vde, Vag = 9) 'pss 5.0 mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transter Admittance (Vpg = 15 Vde. Vag = 0, f= 1.0 kHz, PW = 100 ms, DC = 10%) (Vpg = 15 Vde, V@g = 0, f= 1.0 kHz, Ta = 55C) Ihtel 75 11.25 mmhos Output Admitiance (Vpg = 15 Vdc, Vag = 0, f= 1.0 kHz, PW = 100 yA, DC = 10%) (Yoel 0.05 input Capacitance (Vpg = 15 Vde, Vag = 0, f= 1.0 MHz) Ciss 40 oF Rverse Transfer Capacitance (Vpg = 15 Vde, Vag = 0, f = 0.1 ta 1.0 MHz) Crss 0.8 pF Commen Source Output Capacitance (Vpg = 15 Vde, Vgg = 0, f= 0.1 to 1.0 MHz) Coss 2.0 pF Common-Source Input Susceptance (Vos = 15 Vdc, Ves = 0, f = 100 MHz) (Vps = 15 Vde, Vas = 0, f = 400 MHz) bis 2.5 10 Cammen-Source Output Susceptance (Vp = 15 Vde, Vag = 0, f = 100 MHz) (Vps = 15 Vdc, Vas = 0, f = 400 MHz) boe 1.0 4.0 mA Common-Source Input Conductance (Vpg = 15 Vde, Veg = 0, f = 100 MH2} (Vpg = 15 Vde, Vgg = 0, f = 400 MHz) Gis 0.3 3.0 Common-Source Output Conductance (Vpg = 15 Vdc. Vgg = 0, f = 100 MHz) (Vps = 15 Vdc, Vag = 0, f = 400 MHz) 9oe 0.075 0.4 Common-Source Forward Transfer Conductance (Vps = 15 Vde, Vag = 0, f = 400 MHz) Sts mA FUNCTIONAL CHARACTERISTICS (See Figure 6) Noise Figure (Vps = 15 Vde, Ip = 5.0 mAdc, Rg = 1.0 kohm, f = 100 MHz) (Vps = 15 Vde, Ip = 5.0 mAdc, Ag = 1.0 kohm, f = 400 MHz) NF 20 49 dB Common-Source Insertion Power Gain (Vps = 15 Vde, Ip = 5.0 mAdc, Rg = 1.0 kohm. f = 100 MHz) (Vpg = 15 Vde, Ip = 5.0 mAdc. Ag = 1.0 kohm, f = 400 MHz} Spe 18 10 dB ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 175C, Vqg =-24 Vde, Vpg = 0 Characteristics Tested Symbol initial and End Point Limits Min Unit Gate Reverse Current lass (V@g = -20 Vde) 01 nade Zero-Gate Voltage Drain Current(1) 'Dss (Vps = 15 Vdc, Vgs = 0) 5.0 15 mAdc Forward Transfer Admittance IYtal (Vps = 15 Vde, Vgg = 0, f = 1.0 kHz) 45 75 mmho Celta from Pre-Burn-in Measured Values Min Delta Forward Transfer Admittance AlYfal % of Initial Value Delta Zero-Gate Voltage Drain Current(') slogs % of Initial Value (1) Pulsed. Pulse Width 250 to 350 us. Duly Cycle 1 0 to 2.0% CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779