DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
1 of 6
www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UXQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
Package
ID
TA = +25°C
-20V
52mΩ @VGS = -4.5V
SOT23
-5.0A
100mΩ @VGS = -2.5V
-3.6A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Backlighting
Power Management Functions
DC-DC Converters
Motor Control
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
Ordering Information (Note 5)
Part Number
Compliance
Case
Packaging
DMG2305UXQ-7
Automotive
SOT23
3,000/Tape & Reel
DMG2305UXQ-13
Automotive
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2009
~
2016
2017
2018
2019
2020
Code
W
~
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
D
GS
Top View
Internal Schematic
Top View
23X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
23X
YM
D
S
G
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
2 of 6
www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UXQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-4.2
-3.3
A
t<10s
TA = +25°C
TA = +70°C
ID
-5.0
-4.0
A
Pulsed Drain Current (Note 7)
IDM
-15
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
1.4
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
90
°C/W
t<10s
64
°C/W
Thermal Resistance, Junction to Case (Note 8)
RθJC
33
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current (TJ = +25°C)
IDSS
-1.0
µA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
-0.5
—
-0.9
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
40
52
mΩ
VGS = -4.5V, ID = -4.2A
52
100
VGS = -2.5V, ID = -3.4A
68
200
VGS = -1.8V, ID = -2A
Forward Transfer Admittance
|YFS|
9
S
VDS = -5V, ID = -4A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
808
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
85
pF
Reverse Transfer Capacitance
Crss
77
pF
Gate Resistance
RG
15.2
Ω
VGS = 0V, VDS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge
QG
10.2
nC
VGS = -4.5V, VDS = -4V,
ID = -3.5A
Gate-Source Charge
QGS
1.3
nC
Gate-Drain Charge
QGD
2.2
nC
Turn-On Delay Time
tD(ON)
10.8
ns
VDS = -4V, VGS = -4.5V,
RG = 6Ω, ID = -1A
Turn-On Rise Time
tR
13.7
ns
Turn-Off Delay Time
tD(OFF)
79.3
ns
Turn-Off Fall Time
tF
34.7
ns
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
3 of 6
www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UXQ
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , DRAIN CURRENT (A)
D
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
0 1 2 3 4 5
V = -3.0V
GS
V = -1.5V
GS
V = -2.5V
GS
V = -4.5V
GS
V = -8.0V
GS
V = -2.0V
GS
V = -1.8V
GS
V = -1.2V
GS
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.02
0.04
0.06
0.08
0.1
0 5 10 15 20
V = -4.5V
GS
V = -2.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 5 On-Resistance Variation with Temperature
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
V = -4.5V
I = -10A
GS
D
V = -2.5V
I = -5.0A
GS
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(on)
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
-50 -25 0 25 50 75 100 125 150
V = -2.5V
I = A
GS
D
-5
V = 5V
I = A
GS
D
-4.
-10
-I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
5
10
15
20
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V = -5.0V
DS
-ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE RESISTANCE (Ω)
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
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September 2018
© Diodes Incorporated
DMG2305UXQ
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I , SOURCE CURRENT (A)
S
T = 25 C
A
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
0.01
0.1
1
10
100
0.1 1 10 100
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 SOA, Safe Operation Area
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on 1*MRP
Board
VGS = -10V
RDS(ON)
Limited
DC
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms PW = 1ms
PW = 100µs
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
T
H
)
0
0.3
0.6
0.9
1.2
1.5
-I =1mA
D
-I = 250µA
D
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
5 of 6
www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UXQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
6 of 6
www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UXQ
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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