AONS66402 40V N-Channel AlphaSGT TM General Description Product Summary VDS * Trench Power AlphaSGTTM technology * Low RDS(ON) * Logic Level Gate Drive * Excellent Gate Charge x RDS(ON) Product (FOM) * RoHS and Halogen-Free Compliant 40V 85A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 1.6m RDS(ON) (at VGS=4.5V) < 2.3m 100% UIS Tested 100% Rg Tested * High Frequency Switching and Synchronous Rectification D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AONS66402 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.3mH TC=25C Power Dissipation B TC=100C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: June 2017 49 52 A EAS 406 mJ 119 Steady-State Steady-State W 47.5 6.2 RJA RJC W 4.0 TJ, TSTG Symbol t 10s A IAS PDSM TA=70C A 39 PD TA=25C Power Dissipation A V 340 IDSM TA=70C 20 85 IDM TA=25C Units V 85 ID TC=100C Maximum 40 -55 to 150 Typ 15 40 0.87 www.aosmd.com Max 20 50 1.05 C Units C/W C/W C/W Page 1 of 6 AONS66402 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Typ 40 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A 1 TJ=55C VGS=10V, ID=20A 100 nA 1.8 2.3 V 1.3 1.6 1.9 2.35 2.3 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 1.8 gFS Forward Transconductance VDS=5V, ID=20A 110 VSD Diode Forward Voltage IS=1A, VGS=0V 0.66 IS Maximum Body-Diode Continuous Current G TJ=125C DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz f=1MHz A 5 1.3 m m S 1 V 85 A 5570 pF 1035 pF 75 pF 0.75 1.15 SWITCHING PARAMETERS Total Gate Charge Qg(10V) 75 105 nC Qg(4.5V) Total Gate Charge 33 47 Qgs Gate Source Charge VGS=10V, VDS=20V, ID=20A 0.35 Units V VDS=40V, VGS=0V IDSS Max nC Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, di/dt=500A/s Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/s 65 Body Diode Reverse Recovery Time nC 16.5 5 nC VGS=0V, VDS=20V 41 nC 13 ns VGS=10V, VDS=20V, RL=1.0, RGEN=3 4.5 ns 48 ns 5 ns 21 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: June 2017 www.aosmd.com Page 2 of 6 AONS66402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 3.5V 80 VDS=5V 4V 4.5V 10V 80 60 60 ID (A) ID (A) 3V 40 125C 40 20 25C 20 VGS=2.5V 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 4 Normalized On-Resistance 1.8 3 RDS(ON) (m) 2 VGS=4.5V 2 1 VGS=10V 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 4 1.0E+01 ID=20A 1.0E+00 125C 1.0E-01 125C IS (A) RDS(ON) (m) 3 2 1.0E-02 25C 1.0E-03 1 25C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: June 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AONS66402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 7000 VDS=20V ID=20A Ciss 6000 Capacitance (pF) VGS (Volts) 8 6 4 5000 4000 3000 2000 Coss 2 1000 0 Crss 0 0 10 20 30 40 50 60 70 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 40 10s 10s 100s 10.0 1ms 10ms DC 1.0 TJ(Max)=150C TC=25C 0.1 0.0 0.01 TJ(Max)=150C TC=25C 0.1 400 Power (W) ID (Amps) 30 500 100.0 300 200 100 1 VDS (Volts) 10 100 0 0.0001 VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJC Normalized Transient Thermal Resistance 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10 10 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=1.05C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: June 2017 www.aosmd.com Page 4 of 6 AONS66402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 120 Current rating ID (A) Power Dissipation (W) 80 100 80 60 40 60 40 20 20 0 0 0 25 50 75 100 125 150 0 TCASE (C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 1.5 TA=25C Power (W) Eoss(uJ) 1000 1 100 0.5 10 0 0 10 20 30 40 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) VDS (Volts) Figure 14: Coss stored Energy ZJA Normalized Transient Thermal Resistance 0.001 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=50C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: June 2017 www.aosmd.com Page 5 of 6 AONS66402 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: June 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6