CPH6318
Rev.0 I Page 1 of 4 I www.onsemi.com
Features
•Low ON-resistance.
•High-speed switching.
•1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --12 V
Gate-to-Source Voltage VGSS ±8V
Drain Current (DC) ID--6 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --24 A
Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 1.6 W
Mounted on a FR4 board PW≤5s 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --12 V
Zero-Gate Voltage Drain Current IDSS VDS=--12V, VGS=0 --10 µA
Gate-to-Source Leakage Current IGSS VGS=±6.4V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.3 --1.0 V
Forward T ransfer Admittance yfsVDS=--6V, ID=--3A 7.7 11 S
RDS(on)1 ID=--3A, VGS=--4.5V 26 34 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--1.5A, VGS=--2.5V 36 50 mΩ
RDS(on)3 ID=--0.5A, VGS=--1.8V 50 75 mΩ
Marking : JU Continued on next page.
Ordering number : ENN7212
CPH6318
Package Dimensions
unit : mm
2151A
[CPH6318]
P-Channel Silicon MOSFET
High-Speed Switching Applications
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
0.05
0.9
0.7 0.2 1.6 0.60.6
0.95
123
654
2.8
0.2
2.9 0.15
0.4
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
CPH6318/D
CPH6318
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page.
Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=--6V, f=1MHz 1900 pF
Output Capacitance Coss VDS=--6V, f=1MHz 440 pF
Reverse T ransfer Capacitance Crss VDS=--6V, f=1MHz 360 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 28 ns
Rise T ime trSee specified Test Circuit. 170 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 190 ns
Fall T ime tfSee specified Test Circuit. 170 ns
Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--6A 22 nC
Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--6A 3.0 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--6A 7.0 nC
Diode Forward Voltage VSD IS=--6A, VGS=0 --0.86 --1.5 V
Switching Time Test Circuit
--60 --40 --20 0 20 40 60 80 100 120 140 160
0--1--2--3 --4 --5 --6
10
30
20
40
50
60
80
70
0--7 --8
RDS(on) -- VGS
Ta=25°C
IT04305
0
0
--6
--5
--4
--3
--2
--1
0
--6
--5
--4
--3
--2
--1
--0.1 --0.2 --0.3 --0.4 --0.5
ID -- VDS
ID= --1.5A
--3.0A
IT04303
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --2.0--1.8
ID -- VGS
IT04304
RDS(on) -- Ta
IT04306
ID= --0.5A, VGS= --1.8V
ID= --1.5A, VGS= --2.5V
ID= --3.0A, VGS= --4.5V
0
20
10
40
30
60
50
80
70
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
VGS= --1.0V
--3.5V
--1.8V
--4.5V
--2.5V
--1.5V
--3.0V
VDS= --6V
25°C
--25°C
Ta=75°C
PW=10µs
D.C.≤1%
0V
--4.5V
VIN
P.G 50Ω
G
S
ID= --3A
RL=2.0Ω
VDD= --6V
VOUT
VIN
D
CPH6318
CPH6318
Rev.0 I Page 3 of 4 I www.onsemi.com
0
0
--1.0
--1.5
--0.5
--2.0
--2.5
--3.0
--3.5
2515 20510
--4.0
--4.5
VGS -- Qg
IT04311
A S O
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
--10
--1.0
--0.1
--0.01
--0.01 --1.0
23 57 23 57 23 2357
--0.1 --10IT04312
10
--0.1 --1.0
23 57 23 57
1000
100
7
5
3
2
7
5
3
2
--10
SW Time -- ID
IT04309
0
100 --2
1000
--4 --6
7
5
3
2
5
3
2
--8 --12--10
Ciss, Coss, Crss -- VDS
IT04310
IT04307
--0.1 --1.0
23 57 23 57
10
1.0
7
5
7
5
3
2
3
2
10
y
fs -- ID
IT04308
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
--0.1
--10
--1.0
7
5
3
2
7
5
3
2
IF -- VSD VGS=0
1ms
VDS= --6V
VDS= --6V
ID= --6A
0
020 40
0.5
60
1.0
80 100 120
1.5
1.6
2.5
2.0
140 160
PD -- Ta
IT04313
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Mounted on a FR4 board PW≤5s
75°C
Ta= --25°C
25°C
--25°C
25°C
Ta=75°C
VDD= --6V
VGS= --4.5V
td(on)
td(off)
tr
tf
f=1MHz
Ciss
Coss
Crss
IDP= --24A
ID= --6A
100ms
DC operation
10ms
Operation in this
area is limited by RDS(on).
<10µs
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm
2
✕0.8mm)
100µs
Mounted on a ceramic board(900mm
2
✕0.8mm)
CPH6318
Rev.0 I Page 4 of 4 I www.onsemi.com CPH6318/D
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