Ordering number : ENN7212 CPH6318 CPH6318 P-Channel Silicon MOSFET High-Speed Switching Applications Features * * Package Dimensions Low ON-resistance. High-speed switching. 1.8V drive. unit : mm 2151A [CPH6318] 0.15 2.9 5 4 0.6 6 0.2 * 2 3 0.95 2.8 0.7 0.9 1 0.2 0.6 1.6 0.05 0.4 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Symbol Conditions Ratings Unit VDSS VGSS --12 8 V ID --6 A IDP V PW10s, duty cycle1% --24 A Mounted on a ceramic board (900mm20.8mm) 1.6 W Allowable Power Dissipation PD 2.0 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Mounted on a FR4 board PW5s Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Conditions V(BR)DSS IDSS ID=--1mA, VGS=0 VGS=6.4V, VDS=0 VDS=--6V, ID=--1mA yfs RDS(on)1 VDS=--6V, ID=--3A max --12 V --0.3 7.7 Unit --10 A 10 A --1.0 V 11 S ID=--3A, VGS=--4.5V 26 34 m ID=--1.5A, VGS=--2.5V 36 50 m ID=--0.5A, VGS=--1.8V 50 75 m Marking : JU (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 typ VDS=--12V, VGS=0 IGSS VGS(off) RDS(on)2 RDS(on)3 Ratings min Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: CPH6318/D CPH6318 Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Input Capacitance Ciss VDS=--6V, f=1MHz 1900 pF Output Capacitance Coss VDS=--6V, f=1MHz 440 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 360 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 28 ns See specified Test Circuit. 170 ns td(off) tf See specified Test Circuit. 190 ns See specified Test Circuit. 170 ns Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--6A 22 nC Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--6A 3.0 nC Gate-to-Drain "Miller" Charge Qgd VDS=--6V, VGS=--4.5V, ID=--6A 7.0 Diode Forward Voltage VSD IS=--6A, VGS=0 nC --0.86 --1.5 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2.0 VIN VOUT D PW=10s D.C.1% G P.G 50 CPH6318 S ID -- VDS --3 --2 VGS= --1.0V --0.1 --0.2 --0.3 --0.4 Drain-to-Source Voltage, VDS -- V --2 C --2 5 0 --0.2 --0.5 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Gate-to-Source Voltage, VGS -- V IT04303 RDS(on) -- VGS 80 --3 --1 0 0 --4 25C V Drain Current, ID -- A V --3. 5 5 --1. --1 VDS= --6V --5 --1 V --4 ID -- VGS Ta= 75 C --3.0 .8V --4.5 Drain Current, ID -- A --5 --6 --2 .5V V --6 --1.8 --2.0 IT04304 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 70 --3.0A 60 ID= --1.5A 50 40 30 20 10 0 0 --1 --2 --3 --4 --5 --7 --6 Gate-to-Source Voltage, VGS -- V --8 70 .8V --1 S= 60 A, VG --0.5 I D= 50 40 I D= 30 5V = --2. , VGS --1.5A V = --4.5 A, V GS .0 I D= --3 20 10 0 --60 --40 IT04305 Rev.0 I Page 2 of 4 I www.onsemi.com --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT04306 CPH6318 yfs -- ID VDS= --6V 2 5 Ta= --2 3 5C C 25 5C 7 2 1.0 2 --1.0 7 5 3 2 7 2 3 5 7 2 --1.0 3 5 --0.1 --0.2 7 10 IT04307 5 --0.6 2 100 tr 7 5 td(on) 3 --1.2 IT04308 f=1MHz Ciss, Coss, Crss -- pF td(off) tf --1.0 3 Ciss 2 3 --0.8 Ciss, Coss, Crss -- VDS 5 VDD= --6V VGS= --4.5V 7 --0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 Switching Time, SW Time -- ns 3 25C --25C 7 Ta=75 C 10 Drain Current, ID -- A 1000 7 5 Coss 3 Crss 2 2 10 --0.1 100 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 0 --10 5 3 2 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --10 7 5 3 2 10 15 20 Total Gate Charge, Qg -- nC 25 DC tio n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm) --0.01 --0.01 2 IT04311 M ou nt Mo ed un ted on on R4 era 1.0 aF ac bo ar mi dP W cb oa rd( 0.5 5 s 90 0m m2 0 .8m m) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 op era 2.0 1.6 1.5 --12 IT04310 <10s 1m s 10 100s ms 10 0m s ID= --6A PD -- Ta 2.5 --10 ASO IDP= --24A 3 2 --0.5 5 --8 --1.0 7 5 --0.1 7 5 0 --6 3 2 --1.0 0 --4 Drain-to-Source Voltage, VDS -- V VDS= --6V ID= --6A --4.0 --2 IT04309 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V VGS=0 7 5 5 --0.1 Allowable Power Dissipation, PD -- W IF -- VSD --10 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 160 IT04313 Rev.0 I Page 3 of 4 I www.onsemi.com 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT04312 Drain-to-Source Voltage, VDS -- V CPH6318 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer's technical experts. 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