PROGRAMMABLE THRESHOLD COUPLER ISOLATION | CURRENT TYPICAL rion VOLTAGE (Vpy)| TRANSFER USEC.) Vee Isat) . MIN. RATIO MIN. Tr Tr . H11A10 1500 a 2 2 GE TYPE AC INPUT COUPLER H11AA1 H11AA2 HIGH VOLTAGE COUPLER 2500 1500 1500 1500 1500 1775 Vas PHOTO DARLINGTON OUTPUT H11B1 2500 H11B2 1500 H11B3 1500 H11B255 1500 H15B1 4000 Vams H15B2 4000 Vams 4N29 2500 4N29A 1775 Vrms 4N30 1500 4N31 1500 4N32 2500 4N33 4N32A 1775 Vans 1500 PHOTO SCR OUTPUT ISOLATION | If TRIGGER] tp 100C | BLOCKING TYPICAL GE TYPE VOLTAGE MIN. ) | (MAX.) uA | VOLTAGE (MIN.)| TON @sec.) | YF (MAX) PHOTON COUPLED INTERRUPTER MODULE PAGE BVEco TYPICAL Vce(sat) Ip (nA NO. OUTPUT CURRENT p (nA) (Vv) [TON GSEQ) [ty (SEC) MAX, H13A1 Ip = 20mA 200uA 30 : H13A2 Tr = 20mA SOKA 30 H13B1 Ir = 20mA 2500HA 25 H13B2 IF = 20mA 1000HA 25 GE TYPE MATCHED EMITTER DETECTOR PAIRS 129Photon Coupled Isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier p84 see 4 ab / The General Electric 4N29 thru 4N33 consist of a gallium * , > eos TSE so Jace | 3 arsenide infrared emitting diode coupled with a silicon photo- [ c frrorvem] sj & [ S50 *%s08") darlington amplifier in a dual in-line package. rot 1 a [oss ? Bie] s roe _a ter J 098| 0121 203! 305 FEATURES: , m ana 15 64 15 > ae atte O1s 375 SBN es 3 * High DC current transfer ratio wane compile) | LE [ase idee te High isolation resistance t 1 4+0 6 PLANE N A me sar pare shoil be o permanent indication of term - e 2500 volts isolation voltage . } Los a iat terminate he Moeranadicent 1/O compatible with integrated circuits iM. ener cannes +Parameters are JEDEC registered values. L___4 Sar places absolute maximum rati ngs: (25 C) (unless otherwise specified) {Storage Temperature -55 to 150C, Operating Temperature -55 to 100C. Lead Soldering Time (at 260C) 10 seconds. INFRARED EMITTING DIODE PHOTO-DARLINGTON +Power Dissipation *150 milliwatts +Power Dissipation **150 milliwatts +Porward Current (Continuous) 80 milliamps +VcEO 30 volts + Forward Current (Peak) 3 ampere +Vcpo 30 volts (Pulse width 300usec, 2% duty cycle) +VEco 5 volts + Reverse Voltage 3 volts Collector Current (Continuous) 100 milliamps *Derate 2.0mW/C above 25C ambient. **Derate 2.0mW/C above 25C ambient. {Total device dissipation @ Ta = 25C. Pp 250 mW. {Derate 3.3 mW/C above 25C ambient. individual electrical characteristics (25C) INFRARED EMITTING | TYP.]MAX.| UNITS PHOTO-DARLINGTON MIN.| TYP.| MAX. | UNITS DIODE | {Forward Voltage 1.2 | 1.5 | volts Breakdown Voltage Vigrycgo 30 | volts (lp = 10mA) (Ic = 100uA, Ip = O) +Breakdown Voltage V(prycko 30 voits + Reverse Current _ 100 | rmicroamps|} (Ic = 1mA, Ip =O) (Vp = 3V) + Breakdown Voltage VipryEco 5 volts (Ig = 100uA, Ip = O) Capacitance 50 ~ picofarads || Collector Dark Current Icgo _ - |100 nanoamps V =O,f = 1 MHz (Vox = 10V, Ip = 0) coupled electrical characteristics (25C) MIN. | TYP. | MAX, UNITS f Collector Output Current (Ip = 10mA, Vcog = 10V) 4N32, 4N32A, 4N33 50 _ mA 4N29, 4N29A, 4N30 10 - mA 4N31 5 _ mA tSaturation Voltage Collector Emitter 4N29,29A ,30,32,32A,33 _ _ 1.0 [| volts ([g = 8mA, Ic = 2mA) 4N31 _ 1.2 | volts Resistance IRED to Photo-Transistor (@ 500 voits) 100 ~ gigaohms Capacitance IRED to Photo-Transistor (@ 0 volts, f = 1 MHz) _ 1 picofarad tIsolation Voltage 60 Hz with the input terminals (diode) 4N29,29A,32,32A |2500 | _ volts (peak) shorted together and the output terminals (transistor) 4N30,4N31,4N33 | 1500] _ volts (peak) shorted together " 4N29A, 4N32A [1775 volts (RMS) (1 sec.) {Switching Speeds: Ic = SOmA, Ip = 200mA) Figure 1 Turn-On Time ton _ 5 microseconds Turn-Off Time tog 4N29, 4N29A, 4N30, 4N31 40 microseconds Turn-Off Time togg 4N32, 4N32A, 4N33 _ 100 | microseconds 5334N29-33 ogg -NORMALIZED OUTPUT CURRENT -NORMALIZEO OUTPUT CURRENT LcE0 PULSE INPUT PULSE -55 Ol TYPICAL CHARACTERISTICS N.C. Veco r-* J R oo PULSE | OUTPUT | | IRED | | ___ PHOTO r TRANSISTOR | n | | | 2 4 | | Tle Lo J sans WIDTH & |.Oms SWITCHING TIME TEST CIRCUIT Ip = 2.0MA Ip * LOMA NORMALIZED TO: Vee = 5V Ip = LOMA Ta = +25C (5 25 65 100 Ta- AMBIENT TEMPERATURE - C OUTPUT CURRENT VS TEMPERATURE Tp = 2.0MA Ip = 1.0MA Ip = O.5MA NORMALIZED TO: Vee = 5V Ip = LOMA 1.0 10 Vee- COLLECTOR TO EMITTER VOLTAGE - VOLTS OUTPUT CHARACTERISTICS 100 Teeq = NORMALIZED OUTPUT CURRENT 1,000 NORMALIZED TO: Vee = SV Ip = 1MA 1.0 10 100 Ip - INPUT CURRENT - MA OUTPUT CURRENT VS INPUT CURRENT 100 O.t I_- FORWARD CURRENT - mA F Ol / 00 0 / 104 105 102 Igq~ NORMALIZED DARK CURRENT too 0 5 1.0 (.5 2.0 Ve ~ FORWARD VOLTAGE - VOLTS INPUT CHARACTERISTICS NORMALIZED TO: Vee = IOV Ip * 30 Ta = +25C +25 +45 +65 Ta ~ AMBIENT TEMPERATURE - C +85 +100 NORMALIZED DARK CURRENT VS TEMPERATURF 534