REVISIONS DOC. NO. SPCFO04 * Effective: 7/8/02 * DCP No: 1398 mM u i tic oO Ti DCP #| REV DESCRIPTION DRAWN| DATE |CHECKD} DATE | APPRVD} DATE p 1262 A RELEASED HO | 2/26/03 | JWM | 2/26/03 | DUC | 2/26/03 1885 B UPDATED TO ROHS COMPLIANCE EO | 02/03/06} HO 2/6/06 HO 2/6/06 Description: A silicon NPN Darlington transistor in a TO-220 type case designed for general-purpose amplifier and low-speed switching applications. Features: High DC Current Gain CollectorEmitter Sustaining Voltage: Veco(sus) = Monolithic Construction with Built-in BaseEmitter Shunt Resistors Absolute Maximum Ratings: CollectorEmitter Voltage, Vceo 100V CollectorBase Voltage, Veg = 100V EmitterBase Voltage, Veg SV Collector Current, Ic: Continuous Peak = 5A = BA Base Current, Ip 120mA Total Power Dissipation (Te = +25C), Pp = 65W Derate above +25C = 0.52W/*C Total Power Dissipation (Tg = +25C), Pp = 2W Derate above +25C = 0.016W/C Operating Junction Temperature Range, Ty = 65 to +150C Storage Temperature Range, T,, = 65" to +150C Thermal Resistance, JunctiontoCase, Ryo = 1.92C/W Thermal Resistance, JunctiontoAmbient, Riya = 62.5C/W Electrical Characteristics: (T, 100V Min @ 100mA pre H TT RoHS , Compliant \ | oi 2 38 L ah ) TA Dl Tek a +25C unless otherwise specified) [Parameter [Symbol [Test Conditions [Min | Typ|Max|Unit] OFF Characteristics CollectorEmitter Sustaining Voltage |Voeo(ausy Ie = 100mA, Ip = 0, (Note 1) |100 | |- |v Collector Cutoff Current Ieeo Ver = SOV, & = - - |0.5 |mA Iceo Vep = 100V, = - |0.2 |mA Emitter Cutoff Current Igo Vee = OV, Ib = O - - |2 mA ON Characteristics (Note 1) DC Current Gain hee Vor = 3V, Ip = 0.54 1000/- |- Ver = BV, Ie = 3A 1o000/_ |_ 3. Collector CollectorEmitter Saturation Voltage Voe(sat) ik = 3A, Ip = 12mA = = Ip = 5A, Ip = 20mA - |[- BaseEmitter ON Voltage Vase(on) Vor = SV, Ip = SA = 12.5 |V 2. Base Dynamic Characteristics SmallSignal Current Gain [heel Vee = 4V, Ip = 3A, f = 1MHz |4 - [= Output Capacitance Cob Von = 10V, Ip = O, f = 0.1MHz| |200 |pF 1. Emitter Note: 1. Pulse test: Pulse Width 300us, Duty Cycle 2%. Pin Configuration 1. Base 2. Collector Dimensions| A B Cc D E F G H J K L M N |0 : 3. Emitter Min. 14.42] 9.63 |3.56) |1.15| 3.75] 2.29) 2.54) - |12.70) 2.80) 2.03) 5 4. Collector Max. 16.51]10.67| 4.83] 0.90 |1.40| 3.88] 2.79] 3.43) 0.56) 14.73] 4.07) 2.92/31.24| SPC-F004.DWG TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: UNLESS OTHERWISE |_HISHAM ODISH 2/26/03 Transistor, General Purpose, Bipolar, TO-220, NPN SPECIFIED, CHECKED BY: DATE: SIZE] DWG. NO. ELECTRONIC FILE REV DIMENSIONS ARE JEFF MCVICKER 2/26/03 A TIP122 35C0636.DWG | B FOR REFERENCE PURPOSES ONLY. APPROVED BY: DATE: _ ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DISCLAIMER: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE BELIEVE TO BE ACCURATE AND RELIABLE. ALL RISK AND LIABILITY WHATSOEVER IN CONNECTION THEREWITH. SINCE CONDITIONS OF USE ARE BEYOND OUR CONTROL, THE USER SHALL DETERMINE THE SUITABILITY OF THE PRODUCT FOR THE INTENDED USE AND ASSUME