IGBT TRENCHSTOPTM5highSpeedsoftswitchingIGBTwithfullcurrentratedRAPID1diode IKW30N65ES5 650VTRENCHSTOPTM5highspeedsoftswitchingduopak Datasheet IndustrialPowerControl IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT TRENCHSTOPTM5highspeedsoftswitchingIGBTcopackedwithfullcurrent ratedRAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedS5technologyoffering *Highspeedsmoothswitchingdeviceforhard&softswitching *VeryLowVCEsat,1.35Vatnominalcurrent *PlugandplayreplacementofpreviousgenerationIGBTs *650Vbreakdownvoltage *LowgatechargeQG *IGBTcopackedwithfullratedRAPID1fastantiparalleldiode *Maximumjunctiontemperature175C *QualifiedaccordingtoJEDECfortargetapplications *Pb-freeleadplating;RoHScompliant *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: *Resonantconverters *Uninterruptiblepowersupplies *Weldingconverters *Midtohighrangeswitchingfrequencyconverters 1 Packagepindefinition: 2 3 *Pin1-gate *Pin2&backside-collector *Pin3-emitter KeyPerformanceandPackageParameters Type IKW30N65ES5 VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 650V 30A 1.35V 175C K30EES5 PG-TO247-3 2 Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25C TC=100C IC 62.0 39.5 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE650V,Tvj175C,tp=1s - 120.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25Cvaluelimitedbybondwire TC=100C IF 40.0 39.5 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 30 V PowerdissipationTC=25C PowerdissipationTC=100C Ptot 188.0 94.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.80 K/W Diode thermal resistance, junction - case Rth(j-c) 1.00 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - VGE=15.0V,IC=30.0A Tvj=25C Tvj=125C Tvj=175C - 1.35 1.50 1.60 1.70 - - 1.45 1.42 1.39 1.70 - 3.2 4.0 4.8 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25C Tvj=125C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=0.30mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25C Tvj=175C - 1400 50 - A Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 42.0 - S V ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1800 - - 55 - - 7 - - 70.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=30.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 17 - ns - 12 - ns - 124 - ns - 30 - ns - 0.56 - mJ - 0.32 - mJ - 0.88 - mJ IGBTCharacteristic,atTvj=25C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=13.0,RG(off)=13.0, L=30nH,C=30pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 5 Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=13.0,RG(off)=13.0, L=30nH,C=30pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. - 16 - ns - 6 - ns - 133 - ns - 33 - ns - 0.26 - mJ - 0.17 - mJ - 0.43 - mJ - 75 - ns - 0.83 - C - 18.0 - A - -900 - A/s - 52 - ns - 0.60 - C - 18.5 - A - -1315 - A/s DiodeCharacteristic,atTvj=25C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25C, VR=400V, IF=30.0A, diF/dt=1200A/s Tvj=25C, VR=400V, IF=15.0A, diF/dt=1900A/s dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 17 - ns - 13 - ns - 149 - ns - 55 - ns - 0.77 - mJ - 0.56 - mJ - 1.33 - mJ - 16 - ns - 7 - ns - 179 - ns - 54 - ns - 0.41 - mJ - 0.31 - mJ - 0.72 - mJ IGBTCharacteristic,atTvj=150C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=13.0,RG(off)=13.0, L=30nH,C=30pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. Tvj=150C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=13.0,RG(off)=13.0, L=30nH,C=30pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 6 Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT DiodeCharacteristic,atTvj=150C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=150C, VR=400V, IF=30.0A, diF/dt=1200A/s Tvj=150C, VR=400V, IF=15.0A, diF/dt=1900A/s dirr/dt 7 - 110 - ns - 1.75 - C - 26.5 - A - -1000 - A/s - 78 - ns - 1.25 - C - 26.2 - A - -1200 - A/s Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT 200 70 180 60 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 160 140 120 100 80 60 50 40 30 20 40 10 20 0 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[C] 100 125 150 175 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE15V,Tvj175C) 90 90 VGE = 20V 80 VGE = 20V 80 18V 18V 15V 15V 70 70 12V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 75 TC,CASETEMPERATURE[C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj175C) 10V 60 8V 50 7V 6V 40 5V 30 12V 8V 50 5V 10 2 3 4 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 6V 30 10 1 7V 40 20 0 10V 60 20 0 50 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25C) Figure 4. Typicaloutputcharacteristic (Tvj=175C) 8 Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT 90 3.0 Tvj = 25C Tvj = 150C VCEsat,COLLECTOR-EMITTERSATURATION[V] 80 IC,COLLECTORCURRENT[A] 70 60 50 40 30 20 10 0 2 3 4 5 6 7 8 9 IC = 15A IC = 30A IC = 60A 2.5 2.0 1.5 1.0 0.5 0.0 10 25 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=20V) 100 125 150 175 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 75 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 50 Tvj,JUNCTIONTEMPERATURE[C] 0 10 20 30 40 50 60 70 80 10 1 90 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,RGon=13,RGoff=13,dynamic test circuit in Figure E) 100 0 10 20 30 40 50 60 70 80 90 RG,GATERESISTANCE[] 9 Figure 8. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT 1000 6 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 1 25 50 75 100 125 150 typ. min. max. 5 4 3 2 1 0 175 25 Tvj,JUNCTIONTEMPERATURE[C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RGon=13,RGoff=13,dynamictest circuit in Figure E) 75 100 125 150 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.3mA) 5.0 2.5 Eoff Eon Ets Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 4.5 E,SWITCHINGENERGYLOSSES[mJ] 50 Tvj,JUNCTIONTEMPERATURE[C] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 2.0 1.5 1.0 0.5 0.5 0.0 0 10 20 30 40 50 60 70 80 0.0 90 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150C,VCE=400V, VGE=150/V,RGon=13,RGoff=13,dynamic test circuit in Figure E) 0 10 20 30 40 50 60 70 80 90 RG,GATERESISTANCE[] 10 Figure 12. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT 2.00 1.50 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.75 Eoff Eon Ets 1.50 1.25 1.00 0.75 0.50 1.25 1.00 0.75 0.50 0.25 0.25 0.00 25 50 75 100 125 150 0.00 200 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RGon=13,RGoff=13,dynamictest circuit in Figure E) 300 350 400 450 500 Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150C,VGE=0/15V, IC=30A,RGon=13,RGoff=13,dynamictest circuit in Figure E) 16 1E+4 VCC=130V VCC=520V Cies Coes Cres 14 12 1000 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 250 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 8 6 4 100 10 2 0 0 10 20 30 40 50 60 1 70 QGE,GATECHARGE[nC] 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalgatecharge (IC=30A) Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 11 Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse i: 1 2 3 4 5 ri[K/W]: 0.09435 0.21765 0.230894 0.140301 0.116804 i[s]: 7.0E-5 5.7E-4 5.1E-3 0.021932 0.085861 0.01 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 single pulse i: 1 2 3 4 ri[K/W]: 0.244822 0.287048 0.295435 0.172695 i[s]: 1.3E-4 1.1E-3 8.9E-3 0.079619 0.01 1E-6 1 1E-5 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedance (D=tp/T) 0.01 0.1 1 2.00 Tvj = 25C, IF = 30A Tvj = 150C, IF = 30A Tvj = 25C, IF = 30A Tvj = 150C, IF = 30A 1.75 Qrr,REVERSERECOVERYCHARGE[C] 175 trr,REVERSERECOVERYTIME[ns] 0.001 Figure 18. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 200 150 125 100 75 50 25 0 600 1E-4 tp,PULSEWIDTH[s] 1.50 1.25 1.00 0.75 0.50 0.25 800 1000 1200 1400 1600 1800 2000 diF/dt,DIODECURRENTSLOPE[A/s] 0.00 600 800 1000 1200 1400 1600 1800 2000 diF/dt,DIODECURRENTSLOPE[A/s] Figure 19. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 20. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT 40 0 Tvj = 25C, IF = 30A Tvj = 150C, IF = 30A dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/s] Irr,REVERSERECOVERYCURRENT[A] 35 30 25 20 Tvj = 25C, IF = 30A Tvj = 150C, IF = 30A -200 -400 -600 -800 -1000 15 -1200 10 -1400 5 -1600 0 600 800 1000 1200 1400 1600 1800 -1800 600 2000 diF/dt,DIODECURRENTSLOPE[A/s] Figure 21. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 1200 1400 1600 1800 2000 2.50 Tvj = 25C Tvj = 150C 80 IF = 15A IF = 30A IF = 60A 2.25 VF,FORWARDVOLTAGE[V] 70 IF,FORWARDCURRENT[A] 1000 Figure 22. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 90 60 50 40 30 20 2.00 1.75 1.50 1.25 1.00 0.75 10 0 800 diF/dt,DIODECURRENTSLOPE[A/s] 0.0 0.5 1.0 1.5 2.0 0.50 2.5 VF,FORWARDVOLTAGE[V] 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 23. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 24. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT Package Drawing PG-TO247-3 14 Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 15 Rev.2.2,2015-10-16 IKW30N65ES5 TRENCHSTOPTM5softswitchingIGBT RevisionHistory IKW30N65ES5 Revision:2015-10-16,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2015-08-12 Preliminary data sheet 2.1 2015-09-22 Final data sheet 2.2 2015-10-16 Minor change Ic(VCE) Fig. 3 and Fig. 4 Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)InfineonTechnologiesAG2015. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie").Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseof theproductofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer'stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies'productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. 16 Rev.2.2,2015-10-16