JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both throughhole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N3019. * RHA level JAN qualifications per MIL-PRF-19500/391 (see part nomenclature for all options). TO-39 (TO-205AD) and TO-5 Package Also available in: TO-46 (TO-206AB) (leaded) JANS_2N3057A APPLICATIONS / BENEFITS * * * * Leaded TO-39 and TO-5 package. Lightweight. Low power. Military and other high-reliability applications. TO-18 (TO-206AA) (leaded) JANS_2N3700 UB package (leaded) JANS_2N3700UB o MAXIMUM RATINGS @ TA = +25 C unless otherwise noted Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current o (1) Total Power Dissipation: @ TA = +25 C o (2) @ TC = +25 C Notes: Symbol Value TJ and TSTG RJA RJC VCEO VCBO VEBO IC PD -65 to +200 195 30 80 140 7.0 1.0 0.8 5.0 1. Derate linearly 4.6 mW/C for TA +25 C. 2. Derate linearly 28.6 mW/C for TC +25 C. Unit o C C/W o C/W V V V A W o MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0098, Rev. 3 (120177) (c)2012 Microsemi Corporation Page 1 of 7 JANS_2N3019 and JANS_2N3019S MECHANICAL and PACKAGING * * * * * * CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Gold plate, solder dip (Sn63/Pb37) available upon request. MARKING: Part number, date code, manufacturer's ID and serial number. POLARITY: NPN. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JANSM 2N3019 S Reliability Level JANSM = 3K Rads (Si) JANSD = 10K Rads (Si) JANSP = 30K Rads (Si) JANSL = 50K Rads (Si) JANSR = 100K Rads (Si) Symbol f IB IE TA TC VCB VCE VEB Package type S = TO-39 Non-S (blank) = TO-5 JEDEC type number SYMBOLS & DEFINITIONS Definition frequency Base current (dc) Emitter current (dc) Ambient temperature Case temperature Collector to base voltage (dc) Collector to emitter voltage (dc) Emitter to base voltage (dc) T4-LDS-0098, Rev. 3 (120177) (c)2012 Microsemi Corporation Page 2 of 7 JANS_2N3019 and JANS_2N3019S ELECTRICAL CHARACTERISTICS @ TA = +25 C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current IC = 30 mA Collector-Base Cutoff Current VCB = 140 V Emitter-Base Cutoff Current VEB = 7 V Collector-Emitter Cutoff Current VCE = 90 V Emitter-Base Cutoff Current VEB = 5.0 V ON CHARACTERTICS Forward-Current Transfer Ratio IC = 150 mA, VCE = 10 V IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 1.0 A, VCE = 10 V Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA Symbol Min. V(BR)CEO 80 Max. Unit V ICBO 10 A IEBO1 10 A ICES 10 A IEBO2 10 A hFE 100 50 90 50 15 300 300 300 VCE(sat) 0.2 0.5 V VBE(sat) 1.1 V Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Symbol Min. Max. hfe 80 400 Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 50 mA, VCE = 10 V, f = 20 MHz |hfe| 5.0 20 Output Capacitance VCB = 10 V, IE = 0, 100 kHz f 1.0 MHz Cobo 12 pF Input Capacitance VEB = 0.5 V, IC = 0, 100 kHz f 1.0 MHz Cibo 60 pF T4-LDS-0098, Rev. 3 (120177) (c)2012 Microsemi Corporation Page 3 of 7 JANS_2N3019 and JANS_2N3019S ELECTRICAL CHARACTERISTICS @ TA = +25 C, unless otherwise noted (continued) SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests TC = 25 C, 1 cycle, t = 10 ms Test 1 2N3019, 2N3019S VCE = 10 V IC = 500 mA Test 2 2N3019, 2N3019S VCE = 40 V IC = 125 mA Test 3 2N3019, 2N3019S VCE = 80 V IC = 60 mA IC - COLLECTOR CURRENT - A (1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0% VCE - COLLECTOR - EMITTER VOLTAGE - V Maximum Safe Operating Area T4-LDS-0098, Rev. 3 (120177) (c)2012 Microsemi Corporation Page 4 of 7 JANS_2N3019 and JANS_2N3019S ELECTRICAL CHARACTERISTICS @ TA = +25 C, unless otherwise noted (continued) POST RADIATION ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Symbol Collector to Base Cutoff Current VCB = 140 V Emitter to Base Cutoff Current VEB = 7 V Collector to Emitter Breakdown Voltage IC = 30 mA Max. Unit ICBO 20 A IEBO 20 A V(BR)CEO Min. 80 V Collector-Emitter Cutoff Current VCE = 90 V ICES 20 A Emitter-Base Cutoff Current VEB = 5.0 V IEBO 20 A Forward-Current Transfer Ratio IC = 150 mA, VCE = 10 V (2) IC = 0.1 mA, VCE = 10 V [hFE] IC = 10 mA, VCE = 10 V [50] 300 [25] 300 [45] IC = 500 mA, VCE = 10 V [25] IC = 1 A, VCE = 10 V [7.5] 300 Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCE(sat) 0.23 0.58 V Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA VBE(sat) 1.27 V (2) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the preand post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. T4-LDS-0098, Rev. 3 (120177) (c)2012 Microsemi Corporation Page 5 of 7 JANS_2N3019 and JANS_2N3019S Maximum DC Operation Rating (W) GRAPHS o TA ( C) Ambient Maximum DC Operation Rating (W) FIGURE 1 Temperature - Power Derating (RJA) o TC ( C) Case at base FIGURE 2 Temperature - Power Derating (RJC) T4-LDS-0098, Rev. 3 (120177) (c)2012 Microsemi Corporation Page 6 of 7 JANS_2N3019 and JANS_2N3019S PACKAGE DIMENSIONS Dimensions Inches Millimeters Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r P Min Max .305 .335 .240 .260 .335 .370 .200 TP .016 .021 .500 .750 .016 .019 .050 .250 .050 .029 .045 .028 .034 .010 45 TP .100 Min Max 7.75 8.51 6.10 6.60 8.51 9.40 5.08 TP 0.41 0.53 12.70 19.05 0.41 0.48 1.27 6.35 1.27 0.74 1.14 0.71 0.86 0.25 45 TP 2.54 Notes 6 7, 8 7, 8, 12 7, 8 7, 8 7, 8 5 4 3 10 6 NOTES: 1. 2. 3. 4. 5. 6. Dimension are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. For "S" suffix devices, dimension LL is 0.500 (12.70 mm) minimum, 0.750 (19.05 mm) maximum. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. TO-39, Dim LL is 0.50" - 0.75"; TO-5, Dim LL is 1.500" - 1.750" T4-LDS-0098, Rev. 3 (120177) (c)2012 Microsemi Corporation Page 7 of 7