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JANS_2N3019 and JANS_2N3019S
RADIATION HARDE NED LOW POWER
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL, an d
JANSR
DESCRIPTION
This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for
high-reliability applications. Microsemi also offers numerous other transistor products to meet
higher and lower power ratings with various switching speed requirements in both through-
hole and surface-mount packages.
TO-39 (TO-205AD)
and TO-5 Package
Also available in:
TO-46 (TO-206AB)
(leaded)
JANS_2N3057A
TO-18 (TO-206AA)
(leaded)
JANS_2N3700
UB package
(leaded)
JANS_2N3700UB
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3019.
• RHA level JAN qualifications per MIL-PRF-19500/391 (see part nomenclature for all options).
APPLICATIONS / BENEFITS
• Leaded TO-39 and TO-5 package.
• Lightweight.
• Low power.
• Military and other high-reliability applications.
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Resistance Junction-to-Ambient
RӨJA
195
oC/W
Thermal Resistance Junction-to-Case
RӨJC
30
oC/W
Collector-Emitter Voltage
VCEO
80
V
Collector-Base Voltage
VCBO
140
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
1.0
A
Total Power Dissipation: @ TA = +25
o
C
(1)
@ TC = +25
o
C
(2)
PD 0.8
5.0
W
Notes: 1. Derate linearl y 4. 6 mW/°C for TA ≥ +25 °C.
2. Derate linearly 28.6 mW/°C for TC ≥ +25 °C.
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JANS_2N3019 and JANS_2N3019S
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nic kel cap .
• TERMINALS: Gold plate, solder dip (Sn63/Pb37) available upon request.
• MARKING: Part number, date code, manufacturer’s ID a nd s er ial nu mber.
• POLARITY: NPN.
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JANSM 2N3019 S
Reliability Level
JANSM = 3K Rads (Si)
JANSD = 10K Rads (Si)
JANSP = 30K Rads (Si)
JANSL = 50K Rads (Si)
JANSR = 100K Rads (Si)
Package type
S = TO-39
Non-S (blank) = TO-5
JEDEC type number
SYMBOLS & DEFINITIONS
Symbol
Definition
f
frequency
IB
Base current (dc)
IE
Emitter current (dc)
TA
Ambient temperature
TC
Case temperature
VCB
Collector to base voltage (dc)
VCE
Collector to emitter voltage (dc)
VEB
Emitter to base voltage (dc)
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JANS_2N3019 and JANS_2N3019S
ELECTRICAL CHARACTERISTICS @ TA = +2 5 °C, unless otherwise noted
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
IC = 30 mA
V(BR)CEO 80 V
Collector-Base Cutoff Current
VCB = 140 V
ICBO 10 µA
Emitter-Base Cutoff Current
VEB = 7 V
IEBO1 10 µA
Collector-Emitter Cutoff Current
VCE = 90 V
ICES 10 ηA
Emitter-Base Cutoff Current
VEB = 5.0 V
IEBO2 10 ηA
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
hFE
100
50
90
50
15
300
300
300
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA VCE(sat)
0.2
0.5 V
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
VBE(sat)
1.1
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mA, V
CE
= 5.0 V, f = 1.0 kHz
h
fe
80
400
Magnitude of Small-Signal Short-Circuit Forward Current
Transfer Ratio
|hfe|
I
C
= 50 mA, V
CE
= 10 V, f = 20 MHz
5.0
20
Output Capac ita nc e
Cobo
pF
V
CB
= 10 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
12
Input Capacitance
Cibo
pF
V
EB
= 0.5 V, I
C
= 0, 100 kHz ≤ f ≤ 1.0 MHz
60
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JANS_2N3019 and JANS_2N3019S
ELECTRICAL CHARACTERISTICS @ TA = +2 5 °C, unless otherwise noted (continued)
SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = 25 °C, 1 cycle, t = 10 ms
Test 1
2N3019, 2N30 19 S
V
CE
= 10 V
IC = 500 mA
Test 2
2N3019, 2N30 19 S
V
CE
= 40 V
IC = 125 mA
Test 3
2N3019, 2N30 19 S
V
CE
= 80 V
IC = 60 mA
(1) Pul se Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
I
C
– COLLECTOR CURRE NT - A
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JANS_2N3019 and JANS_2N3019S
ELECTRICAL CHARACTERISTICS @ TA = +2 5 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Collector to Base Cutoff Current ICBO 20 µA
V
CB
= 140 V
Emitter to Base Cutoff Current IEBO 20 µA
V
EB
= 7 V
Collector to Emitter Breakdown Voltage V(BR)CEO 80 V
I
C
= 30 mA
Collector-Emitter Cutoff Current ICES 20 ηA
V
CE
= 90 V
Emitter-Base Cutoff Current IEBO 20 ηA
V
EB
= 5.0 V
Forward-Current Transfer Ratio (2)
[hFE]
I
C
= 150 mA, V
CE
= 10 V
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1 A, VCE = 10 V
[50]
[25]
[45]
[25]
[7.5]
300
300
300
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA
0.23
0.58
Base-Emitter Saturation Voltage
VBE(sat)
V
I
C
= 150 mA, I
B
= 15 mA
1.27
(2) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-
and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value
can never exceed the pre-radi ation mini mum hFE that it is based upon.
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JANS_2N3019 and JANS_2N3019S
GRAPHS
TA (oC) Ambient
FIGURE 1
Temperature – Power Derating (RӨJA)
TC (oC) Case at base
FIGURE 2
Temperature – Power Derating (RӨJC)
Maximum DC Operation Rating (W)
Maximum DC Operation Rating (W)
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JANS_2N3019 and JANS_2N3019S
PACKAGE DIMENSIONS
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. For "S" suffix devices, dimension LL is 0.500 (12.70 mm) minimum, 0.750 (19.05 mm) maximum.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. TO-39, Dim LL is 0.50" - 0.75"; TO-5, Dim LL is 1.500" - 1.750"
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
7, 8
LL
.500
.750
12.70
19.05
7, 8, 12
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7, 8
L2
.250
6.35
7, 8
Q
.050
1.27
5
TL
.029
.045
0.74
1.14
4
TW
.028
.034
0.71
0.86
3
r
.010
0.25
10
α
45° TP
45° TP
6
P
.100
2.54
