Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
CR05AS
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
•I
T (AV) ........................................................................0.5A
•V
DRM ..............................................................200V/400V
•I
GT .........................................................................100µA
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage ✽1
DC off-state voltage ✽1
Voltage class Unit
V
V
V
V
V
MAXIMUM RATINGS
4 (marked “CB”)
200
300
160
200
160
8 (marked “CD”)
400
500
320
400
320
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=57°C ✽2
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
mg
Ratings
0.79
0.5
10
0.4
0.1
0.01
6
6
0.1
–40 ~ +125
–40 ~ +125
48
✽1. With Gate-to-cathode resistance RGK=1kΩ
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
4.4±0.1 1.5±0.1
1.6±0.2
0.4±0.07
0.8 MIN
2.5±0.1
3.9±0.3
0.4+0.03
–0.05
123
(Back side)
OUTLINE DRAWING
Dimensions
in mm
SOT-89
0.5±0.07
1.5±0.11.5±0.1
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Soldering with ceramic plate (25mm × 25mm × t0.7).
✽3.If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
B
20 ~ 50
Item
IGT (µA)
A
1 ~ 30
C
40 ~ 100
ELECTRICAL CHARACTERISTICS
Test conditions
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied, RGK=1kΩ
Ta=25°C, ITM=1.5A, instantaneous value
Ta=25°C, VD=6V, IT=0.1A ✽4
Tj=125°C, VD=1/2VDRM, RGK=1kΩ
Tj=25°C, VD=6V, IT=0.1A ✽4
Tj=25°C, VD=12V, RGK=1kΩ
Junction to ambient ✽2
Unit
mA
mA
V
V
V
µA
mA
°C/W
Typ.
—
—
—
—
—
—
—
—
Symbol
IRRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-a)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
—
—
—
—
0.2
1
—
—
Max.
0.1
0.1
1.9
0.8
—
100✽3
3
70
3V
DC
I
GS
I
GT
6V
DC
60Ω
V
GT
21
TUT
1kΩ
R
GK
A3 A2 V1
A1
SWITCH 1 : I
GT
measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
✽4. I
GT
, V
GT
measurement circuit.
SWITCH
10
0
23 5710
1
4
2
23 5710
2
44
6
8
10
3
1
5
7
9
0
501 423
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
T
a
= 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
2
10
–2
10
0
10
1
10
1
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
23 57 23 57
10
–1
10
2
23 57 23 57
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 100µA
(T
j
= 25°C)
P
GM
= 0.1W
P
G(AV)
= 0.01W
V
GD
= 0.2V I
FGM
= 0.1A
200
160
140
120
60
80
20
0160–40–20 20 80 140120
40
100
180
06040 100
# 1
# 2
I
GT
(25°C)
# 1 32µA
# 2 9µA
TYPICAL EXAMPLE 1.0
0.8
0.7
0.6
0.3
0.4
0.1
0160–40–20 20 80 140120
0.2
0.5
0.9
06040 100
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
1.5
0.5
1.0
00.80 0.2 0.4 0.6 0.70.1 0.3 0.5
θ
360°
θ = 30° 60° 90° 180°
120°
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE (V)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
TIME (s)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE CURRENT (T
j
= t°C)
GATE CURRENT (T
j
= 25°C)
2310
0
5710
1
23 5710
2
23 5710
3
10
1
2310
–3
5710
–2
23 5710
–1
23 5710
0
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
See ∗3
GATE CHARACTERISTICS
60–20–40–60 0 20 40 80 100120140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
1.5
1.0
0.5
00.80 0.2 0.4 0.6 0.70.1 0.3 0.5
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
θ = 30° 60° 120°
90° 180°
270°
DC
1.5
1.0
0.5
00.80 0.2 0.4 0.6 0.70.1 0.3 0.5
θ = 30° 60° 120°
90°
180°
θ θ
360°
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0160–40 0 40 80 120140–20 20 60 100
R
GK
= 1kΩ
TYPICAL EXAMPLE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25 °C)
160
120
60
40
20
140
100
80
00.80 0.2 0.4 0.6
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
θ = 30°
60° 120°
90° 180°
160
120
60
40
20
140
100
80
00.80 0.2 0.4 0.6
θ θ
360°
RESISTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
θ = 30° 60° 120°
90° 180°
160
120
60
40
20
140
100
80
00.80 0.2 0.4 0.6
θ = 30° 120°
180°
DC
270°60°
90°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
ALUMINUM BOARD
WITH SOLDERING
25 25 ± t0.7
NATURAL
CONVECTION
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
160
120
100
40
60
20
0160–40–20 20 80 140120
80
140
06040 100
TYPICAL EXAMPLE
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= t°C)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= 25°C)
2310
–1
5710
0
23 5710
1
23 5710
2
120
0
80
100
40
60
20
Tj = 125°C
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (kΩ)
100 (%)
BREAKOVER VOLTAGE (R
GK
= rkΩ)
BREAKOVER VOLTAGE (R
GK
= 1kΩ)
2310
0
5710
1
23 5710
2
23 5710
3
120
0
80
100
40
60
20
# 1
# 2
TYPICAL EXAMPLE
# 1 IGT (25°C)= 10µA
# 2 IGT (25°C)= 66µA
Tj = 125°C, RGK = 1kΩ
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = vV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
60–20–40–60 0 20 40 80 100120140
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
TYPICAL
EXAMPLE
DISTRIBUTION
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
Tj = 25°C
IH (25°C) = 1mA
IGT (25°C) = 25µA
2310
–1
5710
0
23 5710
1
23 5710
2
500
0
200
300
400
100
# 1
# 2
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (kΩ)
100 (%)
HOLDING CURRENT (R
GK
= rkΩ)
HOLDING CURRENT (R
GK
= 1kΩ)
# 1 13µA 1.6mA
# 2 59µA 1.8mA
TYPICAL EXAMPLE
IH (1kΩ)IGT (25°C)
Tj = 25°C
10
2
22310
0
45 710
1
345 710
2
7
5
10
3
4
3
2
7
5
2
4
3
10
1
# 1
# 2
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE
IGT (25°C)
# 1 10µA
# 2 66µA
Tj = 25°C
