(INTERSIL 2N4867/A-2N4869/A N-Channel JFET FEATURES Low Noise Voltage e, <5 avs Hz @ Low Leakage IGqcg $0.25 nA High Gain Y;, > 1300 < 4000 umho PIN CHIP CONFIGURATION TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted} Maximum Temperatures TO-72 5005 Storage Temperature -65C to +200C 028 * B08 Operating Junction Temperature +200C e028 Tr Lead Temperature (Soldering, > soem 10 sec time limit) +260C SOURCE (1) | }-3K| Maximum Power Dissipation ove: syasrnate DRAIN 12) Device Dissipation @ Free Air Temperature 300 mw ta Linear Derating 1.7 mw/C Maximum Voltages & Current 6 5 Ves Gate to Source Voitage -40 V Vep Gate to Drain Voltage -40V Iq Gate Current 50 mA ORDERING INFORMATION TO-72 WAFER DICE 2N4867 2N4867/W 2N4867/D 2N4867A | 2N4867A/W 2N4867A/D 2N4868 2N4868/W 2N4868/D 2N4868A | 2N4868A/W 2N4868A/D 2N4869 2N4869/W 2N4869/D 2N4869A | 2N4869A/W 2N48694/D ELECTRICAL CHARACTERISTICS (28C uniess otherwise noted) 2N4867 2N4868 2N4869 PARAMETER (2N48674 2N4868A 2N4869A UNIT TESY CONDITIONS MIN MAX | MIN MAX | MIN MAX ~0.2 -0.25 -0.25 A 'Gss Gate Reverse Current Oe 0.25 0.25 WA VGs = -30 V, Vos =0 freer BVGss Gate-Source Breakdown Voltage | ~10 ~40 -40 Vv Iq =-1KA, Vos =0 VGS{off) Gate-Source Cutoff Voltage C7 -2 -1 -3 -18 -5 Vps= 20 V. Ip = 1A Iss Noel) Drain Current 04 12 1 3 25 75 | mA | Vps=20V, Vgs=0 fs Senet eet) 790 2000 | 1000 3000 | 1300 4000 Common-Source Output 15 4 10 umho fet kHz Sos Conductance : Vas =20V,V 0 Cc Common-Source Reverse 5 5 5 OS * VGS = rss Transfer Capacitance Common-Source Input , pF f= 1 MHz Ciss Capacitance 25 25 26 - 20 20 20 2N4B67 Series | 1g yy, = Short Circuit Equivalent Input 10 10 10 nv Vos = 10 V, | 2N4867A Series a Noise Voltage 10 10 10 VHz | Ves" 90 2N4867 Series f=1kH 5 5 5 IN4B67A Series ; Vos = 10V. Vgg=0 NF Spot Noise Figure 1 1 1 dB R . 20K, 2N4867 Series] f= 1 kHz gen 5K, 2N4867A Series NOTE: 1. Pulse test duration 2 ms. 1-73