© 2006 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 150 V
VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 175°C 500 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 16 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 150 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ150 V
VDSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 120 A
IL(RMS) External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 260 A
IAR TC= 25°C60A
EAR TC= 25°C60mJ
EAS TC= 25°C 2.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 600 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic case for 10 s 260 °C
MdMounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-247 6.0 g
TO-268 5.0 g
G = Gate D = Drain
S = Source TAB = Drain
DS99210E(12/05)
PolarHTTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
Features
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
TO-268 (IXFT)
GS
IXFH 120N15P
IXFT 120N15P
VDSS = 150 V
ID25 = 120 A
RDS(on) ≤≤
≤≤
≤16 m ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤200 ns
GDS
TO-247 (IXFH)
D (TAB)
D (TAB)
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 120N15P
IXFT 120N15P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 60 S
Ciss 4900 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
Crss 330 pF
td(on) 33 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 42 ns
td(off) RG = 4 Ω (External) 85 ns
tf26 ns
Qg(on) 150 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 nC
Qgd 80 nC
RthJC 0.25°C/W
RthCS (TO-3P) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 120 A
ISM Repetitive 260 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A, -di/dt = 100 A/µs 200 ns
QRM VR = 100 V, VGS = 0 V 600 nC
IRM 6Α
TO-268 (IXFT) Outline
TO-247 (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
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© 2006 IXYS All rights reserved
IXFH 120N15P
IXFT 120N15P
Fig. 2. Exte nded Output Characteristics
@ 25
º
C
0
40
80
120
160
200
240
280
012345678910
V
D S
- Volts
I
D
- Amperes
VGS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
º
C
0
20
40
60
80
100
120
01 23 45
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
00.511.5 22.5
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
5V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 120A
I
D
= 60A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.5
1
1.5
2
2.5
3
3.5
4
0 30 60 90 120 150 180 210 240 270 300
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 25ºC
V
GS
= 10V
T
J
= 175ºC
VGS = 15V
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 120N15P
IXFT 120N15P
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20406080100120140160
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 75V
I
D
= 60A
I
G
= 10mA
Fig. 7. Input Admittance
0
30
60
90
120
150
180
210
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
G S
- Volts
I
D
- Amperes
T
J
= 150
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 30 60 90 120 150 180 210 240 270
I
D
- Amperes
g f s
- Siemens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Curre nt vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
S D
- Volts
I
S
- Amperes
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 175
º
C
T
C
= 25
º
C
R
DS(on)
Limit
10ms
25µs
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© 2006 IXYS All rights reserved
IXFH 120N15P
IXFT 120N15P
Fig. 13. M axim um Transient The rm al Re s is tance
0.01
0.10
1.00
0.1 1 10 100 1000
Pulse W idth - milliseconds
R( t h ) J C - ºC / W
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