[EQ0321] EQ0321 Programmable linear Hall IC for 1 axis 1. Genaral Description The EQ0321 is a programmable linear Hall IC which has two Hall elements and a processing circuit. The output of the EQ0321 is an analog voltage and proportional with the displacement of the magnet that placed above the EQ0321. The EQ0321 is suitable for precise position sensing to optical image stabilization, auto focus, zoom lenses of digital steel camera. 2. Features Sensing stroke ; 1~3mm Accuracy ; 0.1 % of sensing stroke (Ideal) 4-line SPI interface Consumption current Power down mode ; 5 A (Max.) Active mode ; 5.5 mA (Typ.), 7.5 mA (Max.) Power supply ; 2.7 ~ 5.5 V Package size ; 10 pin, SON (2.9x3.2x0.6.mm) Operating Temperature ; -30C ~ 85C Compensating the temperature characteristic of the magnet and Hall elements. MS1436-E-00 2013/04 -1- [EQ0321] 3. Table of Contents 1. Genaral Description ....................................................................................................................................... 1 2. Features .......................................................................................................................................................... 1 3. Table of Contents ........................................................................................................................................... 2 4. Block Diagram and Functions ....................................................................................................................... 3 5. Pin Configurations and Functions.................................................................................................................. 4 6. Absolute Maximum Ratings .......................................................................................................................... 5 7. Recommended Operating Conditions ............................................................................................................ 5 8. Electrical Characteristics ............................................................................................................................... 5 9. Non-volatile Memory Characteristics .......................................................................................................... 10 10. Functional Descriptions ............................................................................................................................. 10 11. Recommended External Circuits ............................................................................................................... 15 12. Package ...................................................................................................................................................... 16 13. Taping ........................................................................................................................................................ 18 14. Soldering Conditions ................................................................................................................................. 19 IMPORTANT NOTICE .................................................................................................................................. 20 MS1436-E-00 2013/04 -2- [EQ0321] 4. Block Diagram and Functions 4.1 Block Diagram VCOM VDD VSS RSTN VOLTAGE REFERENCE HE1 HE2 HE DRIVE CSN VOUT CONTROL BLOCK SCK SI SO TSTO Figure 1. Block diagram of the EQ0321 4.2 Block Function Name HE1, HE2 CONTROL BLOCK HE DRIVE VOLTAGE REFERENCE Table 1. Explanation of circuit block Description Hall elements It calculates (B1-B2) / (B1+B2), adjusts gain and offset voltage, controls HE DRIVE. It supplies the driving voltage to Hall elements. It generates reference voltage. MS1436-E-00 2013/04 -3- [EQ0321] 5. Pin Configurations and Functions 5.1 Pin Configurations RSTN 1 10 VDD CSN 2 9 VSS SCK 3 8 VCOM SI 4 7 TSTO SO 5 6 VOUT TOP VIEW Figure 2. Bump down view 5.2 Pin Function Table 2. Pin configurations and functions of the EQ0321 Type I/O Description (Note 1) (Note 2) D I When the input signal is "Low", the power down mode is active. Please make the input "Low" before power on. 2 CSN D I The chip select pin for serial interface. 3 SCK D I The clock input pin for serial interface. 4 SI D I The data input pin for serial interface. 5 SO D O The data output pin for serial interface. 6 VOUT A O This pin outputs the voltage which is proportional to the position of the magnet. Maximum capacity load = 20pF. Minimum resistance load = 100k. 7 TSTO A O This is a test pin. This pin should be connected to VSS. 8 VCOM A O This pin outputs the internal reference voltage (VDD/2). Please connect 0.01F to ground. No resistance load. 9 VSS GND Ground 10 VDD PWR Power supply (Note 1) A(analog pin), D(digital pin), GND(ground pin), PWR(power pin) (Note 2) I(input pin), O(output pin). Pin No. 1 Pin Name RSTN MS1436-E-00 2013/04 -4- [EQ0321] 6. Absolute Maximum Ratings If the device is used in conditions exceeding below values, the device may be destroyed. Normal operations are not guaranteed in such exceeding conditions. Table 3. Absolute Maximum Ratings Ta = 25 oC, unless otherwise specified. Parameter Symbol Min. Max. Supply Voltage VDD -0.3 6.0 Input Voltage VIN -0.3 VDD+0.3 Storage Temperature Tstg -40 125 Pin Units V V C 7. Recommended Operating Conditions Table 4. Recommended operating conditions Parameter Symbol Conditions Min. Typ. Max. Supply Voltage VDD 2.7 5.5 Operating Temperature Ta -30 85 Range Input M.F.D. Range Bin (Note 1) 15 150 "B1-B2" Range Bsub (Note 2) -120 120 "B1+B2" Range Badd (Note 2) 70 250 "(B1-B2) / (B1+B2)" Bdiv (Note 2) -0.7 0.7 Range (Note 1) Magnetic Flux Density (M.F.D.) applied into one Hall element. (Note 2) B1, B2 = the applied magnetic flux density of each Hall elements of the EQ0321. Units V mT mT mT - 8. Electrical Characteristics 8.1 Analog Electrical Characteristics Table 5. Analog Electrical Characteristics VDD = 2.7 ~ 5.5 V, Ta = 25 oC, GAIN = 2.4 and OFFSET=0mV, unless otherwise specified. Conditions Min. Typ. Max. Parameter Symbol Standby Current SIDD RSTN=VSS, 5 Bsub=0mT, Badd=80mT Consumption Current DIDD RSTN=VDD, 5.5 7.5 Bsub=0mT, Badd=80mT Output Sensitivity Vh (Note 1) 28.5 30.0 31.5 Bsub=8mT, Badd=80mT Offset Voltage VOUT0 Bsub=0mT, Badd=80mT VDD/2 VDD/2 VDD/2 -0.15 +0.15 Output High Saturation Vsath 100k load against VSS VDD-0.3 VDD Voltage Output Low Saturation Vsatl 100k load against VDD 0 0.3 Voltage Power On Time tpon (Note 2) 1 Bsub=0mT,Badd=80mT Reset Release Time tRST (Note 2) 0.5 MS1436-E-00 Units A mA mV/mT V V V ms ms 2013/04 -5- [EQ0321] (Note 3)(Note 4) % 2 Ta=-3085C, 25C standard Vofd (Note 3)(Note 5) mV 30 Ta=-3085C, 25C standard (Note 3) (Note 6) 0.2 mVrms Badd=150mT Bandwidth fT (Note 3) 10 kHz (Note 1) The Slope of a line that calculated by least-square method by Vout1 (Bsub=0, Badd=80), Vout2 (Bsub=8, Badd=80) and Vout3 (Bsub=-8, Badd=80) is equal Vh. Vout = { Bsub / Badd } x GAIN x 1000 + VOUT0 [mV] (Note 2) Figure 3 is a timing chart about power on. "tpon" is a time to reach less than 1% of the offset voltage after a reset release. "tRST" is a reset release time after VDD is stable. Temperature Drift of Output Sensitivity Temperature Drift of Offset Voltage Output Noise Voltage Vhd tRSTL (Refer to Table 7) VDD RSTN tRST tpon 1% of offset voltage VOUTX/Y Figure 3. Operation when the device is powered up (Note 3) These parameters are not tested in mass production. (Note 4) Vhd = {(Vh(Ta) - Vh(25oC)) / Vh(25oC) } x 100 [%] (Note 5) Vofd = VOUT 0(Ta) - VOUT 0(25 oC) [mV] (Note 6) The external LPF circuit (fc = 2kHz) 8.2 k EQ0321 VOUT 0.01F VSS Figure 4. LPF circuit MS1436-E-00 2013/04 -6- [EQ0321] 8.2 Digital DC Specification Table 6. Digital DC Specification VDD = 2.7 ~ 5.5 V, Ta = -30 ~ 85 C, unless otherwise specified. Conditions Min. Parameter Symbol Input High Voltage VIH RSTN, CSN, SCK, SI 0.8VDD Input Low Voltage VIL RSTN, CSN, SCK, SI 0 Output High Voltage VOH SI, IOH = -400A VDD-0.4 Output Low Voltage VOL SI, IOL = +400A Input Leakage ILI RSTN, CSN, SCK, SI -10 Output Leakage IHL SO -10 o Typ. Max. VDD 0.2VDD 0.4 10 10 Units V V V V A A 8.3 Digital AC Specification Table 7. Digital AC Specification VDD = 2.7 ~ 5.5 V, Ta = -30 ~ 85 oC, Load capacitance = 30 pF, unless otherwise specified. Condition Min. Typ. Max. Parameter Symbol SCK Frequency fSK 10 SCK Setup time tSKSH 20 CSN Setup time tCSS 40 SCK Pulse Width tSKW 40 SCK Rise Time tRC (Note 1) 10 SCK Fall Time tFC (Note 1) 10 Data Setup Time tDIS 15 Data Hold Time tDIH 15 Data Rise Time tRD (Note 1) 10 Data Fall Time tFD (Note 1) 10 SO pin Output Delay tPD 25 SO pin Hi-Z Time tOZ (Note 1) 40 SO pin Output Hold tOHD 0 Time CSN Hold Time tCSH 40 SCK Hold Time tSKH 20 CSN High Time tCS 40 EEPROM Program tWR 10 20 Time Reset Time tRSTL (Note 2) 10 (Note 1) These parameters are not tested in mass production. (Note 2) See Figure 3. MS1436-E-00 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms s 2013/04 -7- [EQ0321] 8.4 Synchronous Data Timing tCS tCSS CSN tSKSH tSKW tSKW tRC tFC SCK tDIS SI 0 tDIH tFD 0 tRD 0 Hi-Z SO Figure 5. Instruction Input "H" CSN "L" tSKW tSKW SCK tDIS SI tDIH A1 A0 tPD tOHD Hi-Z SO D7 tPD D6 Figure 6. Data Output (READ) tCS tCSS CSN tCSH tSKH tSKSH SCK SI 0 tOHD SO tPD tOZ D1 D0 Hi-Z Figure 7. Data Output (READ) at end of command MS1436-E-00 2013/04 -8- [EQ0321] tWR CSN tSKH SCK SI SO D2 D1 D0 Hi-Z Figure 8. Data Input (WRITE) MS1436-E-00 2013/04 -9- [EQ0321] 9. Non-volatile Memory Characteristics Table 8. Non-volatile Memory Characteristics VDD = 2.7 ~ 5.5 V, Ta = -30 ~ 85 oC, unless otherwise specified. Condition Min. Parameter Symbol EEPROM Endurance EEN EEPROM Data ERE (Note 1) 10 Retention (Note 1) Data retention is not guaranteed after rewritten over 1000 cycles Typ. Max. 1000 Unit Cycles Years 10. Functional Descriptions 10.1 Positional relation of the magnet and the EQ0321 The EQ0321 and a magnet should be placed as Figure 9. S ( - ) side N ( + ) side < Magnet moving direction > Figure 9. Positional relation of magnet and the EQ0321 When the magnet moves from "( - ) side" to "( + )side", the output voltage increases with magnet position as Figure 10. Figure 10. The output voltage with magnet position 10.2 Output voltage, Gain, Offset The EQ0321 has two Hall elements. The EQ0321 outputs the voltage in proportion to following equations which operated Magnetic Flux Density (= M.F.D.) applied on each Hall element. MS1436-E-00 2013/04 - 10 - [EQ0321] VOUT [mV] = { Bsub / Badd } x GAIN + OFFSET + VOUT0 Where, Bsub [mT] = B1 - B2 Badd [mT] = B1 + B2 B1and B2 are the applied magnetic flux density of each Hall elements of the EQ0321. GAIN and OFFSET are defined in Section 10.4 and 10.5. These are adjustable. 10.3 Serial interface Users can read and write the setting data to EEPROM by 4-wire synchronous serial interface. Each command has original operation code, address and data (8bit). Input and output data are synchronized with SCK. The data are entered with a time when SCK rises, and outputted with a time when SCK falls. Table 9. Command Table Command WRITE READ WREN WRDI Operation code 0000 x010 0000 x011 0000 x110 0000 x100 Memory Name Address GAIN 00h OFFSET 01h (Note)Writing to address other than Address A7-A0 A7-A0 Data D7-D0 (in) D7-D0 (out) Table 10. Memory Map D7 D6 D5 D4 0 0 GA5 GA4 0 0 0 0 "00h" ~ "01h" is inhibited. Note Write EEPROM Read EEPROM EEPROM write enable EEPROM write disable x : Don't care D3 GA3 OF3 D2 GA2 OF2 D1 GA1 OF1 D0 GA0 OF0 - 10.3.1 WREN (WRITE ENABLE) / WRDI (WRITE DISABLE) EEPROM has two states, "write enable state" and "write disable state". When WREN command is entered the mode of EEPROM goes to "write enable state". When the EQ0321 is powered on, the state is "write disable state". CSN 1 2 3 4 5 6 7 8 0 0 0 0 x 1 1 0 SCK SI SO Hi-Z x= x=Don't care Figure 11. WREN command MS1436-E-00 2013/04 - 11 - [EQ0321] CSN 1 2 3 4 5 6 7 8 0 0 0 0 x 1 0 0 SCK SI Hi-Z SO x= x=Don't care Figure 12. WRDI command - 10.3.2 WRITE command WRITE instruction can start the WRITE function to EEPROM. After CSN pin changes high to low, operation code, address and data are entered from SI pin. After the instruction input, the internal programming cycle starts when CSN pin changes low to high. After the instructions are entered, CSN pin should change low to high after waiting EEPROM Program Time "tWR" and before next SCK clock rises. After WRITE instruction, the EQ0321 changes to Write Disable status automatically. theEQ0321 needs WREN instruction before every WRITE instruction. When WRITE instruction is done while the EQ0321 is in Write Disable status, WRITE instructions are ignored and the EQ0321 becomes standby status after CSN changes to high. The EQ0321 can accept the next instruction after CSN becomes low. CSN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SCK SI O7 O6 O5 O4 O3 O2 O1 O0 A7 A6 A5 A4 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 Hi-Z SO O7-O0: Operation Code, A7-A0Address, D7-D0Data Figure 13. WRITE sequence - 10.3.3 READ command After CSN changes high to low, the operation code and address are sent on SI pin and the data (D7-D0) outs from SO pin. SI signal is ignored after a final bit (A0) is entered. CSN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SCK SI O7 O6 O5 O4 O3 O2 O1 O0 A7 A6 A5 A4 A3 A2 A1 A0 SO Hi-Z D7 D6 D5 D4 D3 D2 D1 D0 Hi-Z O7-O0: Operation Code, A7-A0Address, D7-D0Data Figure 14. READ command MS1436-E-00 2013/04 - 12 - [EQ0321] 10.4 Gain Adjustment Function (Memory Name: GAIN) Users can change the gain of Vout by writing a setting value to EEPROM by using the serial interface. A factory default setting value of gain is 2.4. Setting value GA[5]GA[0] Table 11. GAIN Table Setting value Gain [times] GA[5]GA[0] Gain [times] 000000 000001 000010 000011 000100 000101 000110 000111 001000 001001 001010 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4(default) 010000 010001 010010 010011 010100 010101 010110 010111 011000 011001 011010 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 001011 001100 001101 001110 001111 2.5 2.6 2.7 2.8 2.9 011011 011100 011101 011110 011111 4.1 4.2 4.3 4.4 4.5 Setting value GA[5]GA[0] Gain [times] Setting value GA[5]GA[0] Gain [times] 100000 100001 100010 100011 100100 100101 100110 100111 101000 101001 101010 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 110000 110001 110010 110011 110100 110101 110110 110111 111000 111001 111010 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 101011 101100 101101 101110 101111 5.7 5.8 5.9 6.0 6.1 111011 111100 111101 111110 111111 7.3 7.4 7.5 7.6 7.7 MS1436-E-00 2013/04 - 13 - [EQ0321] 10.5 Offset Adjustment Function (Memory Name: OFFSET) Users can change DC level of Vout by writing a setting value to EEPROM by using the serial interface. A factory default setting value of DC level is 0mV. Setting value OF[3]OF[0] 0000 0001 0010 0011 0100 0101 0110 0111 Table 12. OFFSET Table Setting value DC level [mV] OF[3]OF[0] 0(default) +100 +200 +300 +400 +500 +600 +700 1000 1001 1010 1011 1100 1101 1110 1111 MS1436-E-00 DC level [mV] 0 -100 -200 -300 -400 -500 -600 -700 2013/04 - 14 - [EQ0321] 11. Recommended External Circuits 11.1 Circuit example VDD = 2.75.5V RSTN VDD CSN VSS 1F SCK 4-wire SPI I/F EQ0321 VCOM 0.01F SI TSTO SO VOUT HOST CPU Figure 15. Recommended circuit MS1436-E-00 2013/04 - 15 - [EQ0321] 12. Package 12.1 Outline Dimensions and Pad Dimensions 10 pin SON package 0.60.05mm 1.4 HE1 Sensor Center 0.15 0.35 0.45 0. 2 0.34 0.2 2.9 0.5 Sensor Center 2.20.07 0. 2 HE2 0.15 (0.26) 0.25 0.18 3.2 0.35 Unit: mm Figure 16. Dimensional drawing of the EQ0321 1: RSTN 2: CSN 3: SCK 4: SI 5: SO 6: VOUT 7: TSTO 8: VCOM 9: VSS 10: VDD 11: N.C. OPEN (Note 1) The center of the sensor is located within the 0.2mm circle. (Note 2) Sensor plate is located in 0.26mm depth from the package surface. (Note 3) The tolerances of dimensions with no mention is 0.1mm (Note 4) There is no plating on cut surface of the terminals. Package Type: SON Material of Terminals: Cu Material of Plating for Terminals: Sn 100% Plating Thickness: 10m (typ.) MS1436-E-00 2013/04 - 16 - [EQ0321] 0.25 0.25 0.5 12.2 Recommended Land Pattern 2.7 0.55 Figure 17. Recommended land pattern 12.3 Marking X1 X2 X3 X4 X1 X2 X3 X4 12H1 Lot Distinction Number Manufacture month (June Manufacture year (2012) Product Distinction Number Figure 18. Marking of the EQ0321 Table 13. Marking information Product Distinction Number Mark Product ID 1 EQ0321 2 3 4 5 6 7 8 9 0 Mark 0 1 2 3 4 5 6 7 8 9 Manufacture Year Corresponding Year 2020 2011 2012 2013 2014 2015 2016 2017 2018 2019 MS1436-E-00 Mark C D E F G H J K L M N P Manufacture month Corresponding Month January February March April May June July August September October November December 2013/04 - 17 - [EQ0321] 13. Taping 13.1 Carrier Tape Products are supplied in the reeled tape which contains 3,000 units per reel. 12H1 Direction of devices Unit : mm Figure 19. Dimensional drawing of carrier tape 13.2 Reel Dimensions Unit : mm Figure 20. Dimensional drawing of reel MS1436-E-00 2013/04 - 18 - [EQ0321] 14. Soldering Conditions 14.1 Soldering Conditions Reflow soldering should be performed under the following conditions. Reflow Profile Heating Time [s] Figure 21. Reflow profile MS1436-E-00 2013/04 - 19 - [EQ0321] IMPORTANT NOTICE 0. 1. 2. 3. 4. 5. 6. 7. 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