1N914 www.vishay.com Vishay Semiconductors Fast Switching Diodes FEATURES * Fast switching speed * High reliability * High conductance * For general purpose switching applicions * AEC-Q101 qualified * Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see MECHANICAL DATA Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS 1N914 1N914-TR or 1N914-TAP 1N914 Single diode Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER SYMBOL VALUE Repetitive peak reverse voltage TEST CONDITION VRRM 100 V Working peak reverse voltage VRWM 75 V V DC blocking voltage VR 75 VR(RMS) 53 V IF 300 mA Half wave rectification with resistive load and f > 50 MHz IF(AV) 200 mA A RMS Reverse voltage Forward continuous current Average rectified current Non repetitive peak forward surge current Power dissipation UNIT t=1s IFSM 1 t = 1 s IFSM 4 A l = 4 mm, TL = 25 C Ptot 500 mW THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range Rev. 1.8, 02-Aug-12 TEST CONDITION SYMBOL VALUE UNIT l = 4 mm, TL = constant RthJA 300 K/W Tj + 175 C Tstg - 65 to + 175 C Document Number: 85622 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N914 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Forward voltage IF = 10 mA VF Breakdown voltage IR = 100 A V(BR) VR = 75 V Peak reverse current MAX. UNIT 1000 mV IR 5 A VR = 20 V, Tj = 150 C IR 50 A VR = 20 V IR 25 nA VR = 0, f = 1 MHz CD 4 pF IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr 4 ns Diode capacitance Reverse recovery time MIN. TYP. 100 V TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 1000 1000 IR- Reverse Current (nA) I F - Forward Current (mA) 1N914 100 Scattering Limit 10 1 T j = 25 C 0.4 0.8 1.2 1.6 1 2.0 94 9098 V F - Forward Voltage (V) 94 9170_1 Scattering Limit 10 1 0.1 0 Tj = 25 C 100 Fig. 1 - Forward Current vs. Forward Voltage 10 100 VR- Reverse Voltage (V) Fig. 2 - Reverse Current vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] O 0.4 min. [0.015] O 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.8, 02-Aug-12 Document Number: 85622 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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