1SS400G
Diodes
1/2
Switching diode
1SS400G
zApplications
High frequen cy switching
zFeatures
1) Ultra small mold type. (VMD2)
2) High relia bility.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Units : mm)
ROHM : VMD2
EIAJ : -
JEDEC : -
3
0.6±0.05
CATHODE MARK
0.27±0.03 0.13±0.03
0.5±0.05
1.0±0.05
1.4±0.05
zA bsolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
VRM V
VR
90
V
80
IFM 225 mA
IO100 mA
Isurge 500 mA
Tj 150 °C
Tstg °C−55~+150
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
−
Parameter Symbol Min. Typ. Max. Unit Conditions
V
F
−−1.2 V I
F
=100mA
I
R
nA V
R
=80V−100
−−3.0 pF V
R
=0.5V , f=1MHz
t
rr
−−4.0 ns V
R
=6V , I
F
=10mA , R
L
=100Ω
C
T
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
1SS400G
Diodes
2/2
zElectrical characteristic curves (Ta=25°C)
0
100
1
10
0.1
0.01
0.001
FORWARD CURRENT : I
F
(A)
FORWARD VOLTAGE : V
F
(V)
Fig.1 Forward characteristics
Ta=−25°C
Ta=25°C
Ta=
1
25°C
Ta=75°C
200 400 600 800 1000
0
Ta=125
°C
Ta=75
°C
Ta=25
°C
10
100
1
0.1
0.01
0.001 20 40 8060 100
REVERSE CURRENT : I
R
(A)
REVERSE VOLTAGE : V
R
(V)
Fig.2 Reverse characteristics
05
1.0
10
0.1 10 15 20 25 30 35
CAPACITANCE : Ct (pF)
REVERSE VOLTAGE : V
R
(V)
Fig.3 Characteristics
