MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-70/SOT-323 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel. http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTORS PIN 1 BASE (INPUT) Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc PIN 2 EMITTER (GROUND) 2 SC-70/SOT-323 CASE 419 STYLE 3 THERMAL CHARACTERISTICS Characteristic R2 1 Symbol Collector Current R1 3 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating PIN 3 COLLECTOR (OUTPUT) MARKING DIAGRAM Symbol Max Unit PD 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) mW Total Device Dissipation TA = 25C Derate above 25C 6x M C/W Thermal Resistance - Junction-to-Ambient RJA 618 (Note 1) 403 (Note 2) C/W Thermal Resistance - Junction-to-Lead RJL 280 (Note 1) 332 (Note 2) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 6x x M = Specific Device Code = (See Marking Table) = Date Code DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 March, 2002 - Rev. 6 1 Publication Order Number: MUN5111T1/D MUN5111T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN5111T1 SC-70/SOT-323 6A 10 10 3000/Tape & Reel MUN5112T1 SC-70/SOT-323 6B 22 22 3000/Tape & Reel MUN5113T1 MUN5113T3 SC-70/SOT-323 6C 47 47 3000/Tape & Reel 10,000/Tape & Reel MUN5114T1 SC-70/SOT-323 6D 10 47 3000/Tape & Reel MUN5115T1 (Note 3) SC-70/SOT-323 6E 10 3000/Tape & Reel MUN5116T1 (Note 3) SC-70/SOT-323 6F 4.7 3000/Tape & Reel MUN5130T1 (Note 3) SC-70/SOT-323 6G 1.0 1.0 3000/Tape & Reel MUN5131T1 (Note 3) SC-70/SOT-323 6H 2.2 2.2 3000/Tape & Reel MUN5132T1 (Note 3) SC-70/SOT-323 6J 4.7 4.7 3000/Tape & Reel MUN5133T1 (Note 3) SC-70/SOT-323 6K 4.7 47 3000/Tape & Reel MUN5134T1 (Note 3) SC-70/SOT-323 6L 22 47 3000/Tape & Reel MUN5135T1 (Note 3) SC-70/SOT-323 6M 2.2 47 3000/Tape & Reel MUN5136T1 SC-70/SOT-323 6N 100 100 3000/Tape & Reel MUN5137T1 SC-70/SOT-323 6P 47 22 3000/Tape & Reel 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 - - - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) VOL MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1 MUN5115T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5116T1 MUN5131T1 MUN5132T1 VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 Input Resistor MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1/ MUN5136T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 -50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 4 150 MUN5111T1 Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5111T1 TA=-25C 0.1 25C 75C 0.01 0 20 25C 100 10 -25C 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 100 TA=-25C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0 10 8 9 Figure 5. Output Current versus Input Voltage 10 0.1 100 25C 75C 10 0.001 50 Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 10 MUN5111T1 Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5112T1 IC/IB = 10 1 25C TA=-25C 75C 0.1 0.01 0 40 20 IC, COLLECTOR CURRENT (mA) TA=75C 10 1 Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance 100 25C 75C f = 1 MHz lE = 0 V TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25C 75C 1 0 10 8 9 Figure 10. Output Current versus Input Voltage TA=-25C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 0 25C -25C 100 10 50 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 10 MUN5111T1 Series 1 1000 IC/IB = 10 TA=-25C 25C 75C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5113T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 -25C 1 0.1 0.01 Figure 14. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 15. Output Current versus Input Voltage 100 10 25C TA=75C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 10 MUN5111T1 Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5114T1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 140 -25C 120 100 80 60 40 20 0 80 TA=75C VCE = 10 V 160 2 1 4 6 Figure 17. VCE(sat) versus IC 100 3.5 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA=75C f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 25C -25C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 25C 75C TA=-25C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 8 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5132T1 1000 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 75C 0.1 25C -25C 0.01 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 75C 100 25C 10 1 35 -25C 0 20 Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 10 8 7 6 5 4 3 2 75C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 -25C 10 25C 1 0.1 0.01 0 0 1 2 3 4 -25C 75C 1 25C 0 5 10 6 7 8 9 10 Figure 26. Output Current versus Input Voltage 10 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 9 1 0 120 40 60 80 100 IC, COLLECTOR CURRENT (mA) 15 20 25 30 35 40 IC, OUTPUT CURRENT (mA) 45 Figure 27. Input Voltage versus Output Current http://onsemi.com 9 50 MUN5111T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75C 25C -25C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5136T1 1000 75C TA = -25C 100 25C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. Maximum Collector Voltage versus Collector Current Figure 29. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 25C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 1 VO = 5 V 0 1 2 3 4 TA = -25C 10 VO = 0.2 V 75C 0 2 6 7 8 9 10 Figure 31. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Capacitance 25C 75C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 32. Input Voltage versus Output Current http://onsemi.com 10 20 MUN5111T1 Series hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5137T1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = -25C 75C 0.1 25C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 1000 75C TA = -25C 100 25C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 33. Maximum Collector Voltage versus Collector Current Figure 34. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 1.0 0.8 0.6 0.4 0.2 75C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 10 25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = -25C 75C 25C 0 6 7 8 9 10 11 Figure 36. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 37. Input Voltage versus Output Current http://onsemi.com 11 MUN5111T1 Series INFORMATION FOR USING THE SC-70/SOT-323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SC-70/SOT-323 POWER DISSIPATION The power dissipation of the SC-70/SOT-323 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150C - 25C 0.625C/W = 200 milliwatts The 0.625C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation of 300 milliwatts can be achieved using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * * * 260C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 12 MUN5111T1 Series SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200C 150C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 205 TO 219C PEAK AT SOLDER JOINT 170C 160C 150C 140C 100C 100C 50C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 38. Typical Solder Heating Profile http://onsemi.com 13 MUN5111T1 Series PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-04 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G C 0.05 (0.002) J N K H http://onsemi.com 14 DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 MUN5111T1 Series Notes http://onsemi.com 15 MUN5111T1 Series Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 16 MUN5111T1/D