343
Six-IGBT IGBTMOD™
H-Series Module
100 Amperes / 1200 Volts
CM100TF-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dimensions Inches Millimeters
A 4.21 107.0
B 4.02 102.0
C 3.543±0.01 90.0±0.25
D3.15±0.0180.0±0.25
E1.57 40.0
F 1.38 35.0
G 1.28 32.5
H 1.26 Max. 32.0 Max
J 1.18 30.0
K 0.98 25.0
L 0.96 24.5
M 0.79 20.0
N 0.67 17.0
Dimensions Inches Millimeters
P 0.57 14.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.30 7.5
W 0.24 Rad. Rad. 6.0
X 0.24 6.0
Y 0.22 5.5
Z M5 Metric M5
AA 0.08 2.0
Outline Drawing and Circuit Diagram
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offer ing simplified system assem-
bly and thermal management.
Features:
□Low Drive Power
□Low V CE(sat)
□Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
□High Frequency Operation
(20-25kHz)
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□Motion/Servo Control
□UPS
□Welding Power Supplies
□Laser Power Supplies
Ordering Information:
Example: Select the complete par t
module number you desire from
the table below -i.e. CM100TF-24H
is a 1200V (VCES), 100 Ampere
Six-IGBT IGBTMOD™ Power
Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 100 24
JH
D
BS
V
U
K
J
T
R
GF
L
P
C A
AA AAM M
P
N
BuP
EuP
BuN
EuN
u
BvP
EvP
v
BvN
EvN
BwP
EwP
w
BwN
EwN
P
N
P
P
N
NUVW
B
u
PB
v
PB
w
P
B
u
NB
v
NB
w
N
E
u
PE
v
PE
w
P
E
u
NE
v
NE
w
N
XXX
.110 TAB
QQN
Z - M5 THD
(7 TYP.)
Y - DIA.
(4 TYP.)
TYP
WE
344
CM100TF-24H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100TF-24H Units
Junction Temperature Tj–40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter V oltage VGES ±20 Volts
Collector Current IC100 Amperes
Peak Collector Current ICM 200* Amperes
Diode Forward Current IF100 Amperes
Diode Forward Surge Current IFM 200* Amperes
Power Dissipation Pd780 Watts
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (Typical) – 830 Grams
V Isolation VRMS 2500 Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5
µ
A
Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V – 2.5 3.4** Volts
IC = 100A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QGVCC = 600V, IC = 100A, VGS = 15V – 500 – nC
Diode Forward Voltage VFM IE = 100A, VGS = 0V – – 3.4 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies –– 20nF
Output Capacitance Coes VGE = 0V, VCE = 10V, f = 1MHZ – – 7 nF
Re verse Transfer Capacitance Cres – – 4 nF
Resistive Turn-on Delay Time td(on) – – 250 ns
Load Rise Time trVCC = 600V, IC = 100A, – – 350 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 3.1Ω– – 300 ns
Times F all Time tf– – 350 ns
Diode Reverse Recovery Time trr IE = 100A, diE/dt = –200A/
µ
s––250ns
Diode Reverse Recovery Charge Qrr IE = 100A, diE/dt = –200A/
µ
s – 0.74 –
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.16 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.35 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.025 °C/W
345
CM100TF-24H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
120
40
0
V
GE
= 20V
15 12
11
8
7
T
j
= 25
o
C
80
160
200
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
048121620
160
120
80
40
0
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
200
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 40 80 120 160
4
3
2
1
0200
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
T
j
= 25°C
I
C
= 40A
I
C
= 200A
I
C
= 100A
0 0.8 1.6 2.4 3.2 4.0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
di/dt = -200A/µsec
T
j
= 25°C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 200 400
16
12
8
4
0600 800
V
CC
= 600V
V
CC
= 400V
I
C
= 100A
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
t
r
t
f
346
CM100TF-24H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.16°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.35°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
