DATA SHEET BF457 BF458 BF459 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR BF457 series types are silicon NPN plastic transistors manufactured by the epitaxial planar process designed for horizontal driver, high voltage amplifier, and switching circuits. MAXIMUM RATINGS (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Peak Collector Current ICM Base Current IB Peak Base Current IBM Power Dissipation (TC=45C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JC Thermal Resistance BF457 160 160 BF458 250 250 5.0 100 300 50 100 10 1.2 BF459 300 300 UNITS V V V mA mA mA mA W W -65 to +150 JA ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) BF457 SYMBOL ICBO ICBO ICBO IEBO TEST CONDITIONS VCB=100V VCB=200V VCB=250V VEB=3.0V MIN MAX 50 BVCBO BVCEO BVEBO VCE(SAT) hFE fT Cob Cre IC=100A IC=10mA IC=1.0mA IC=30mA, IB=6.0mA VCE=10V, IC=30mA VCE=10V, IC=15mA, f=100MHz VCB=30V, IE=0, f=1.0MHz VCE=30V, IC=1.0mA, f=1.0MHz 160 160 5.0 C 10 C/W 104 C/W BF458 MIN MAX BF459 MIN MAX 50 50 UNITS nA nA nA nA 1.0 V V V V 50 50 50 250 250 5.0 1.0 25 90 TYP 5.5 TYP 4.2 TYP 300 300 5.0 1.0 25 90 TYP 5.5 TYP 4.2 TYP 25 90 TYP 5.5 TYP 4.2 TYP MHz pF pF (SEE REVERSE SIDE) R0 BF457 SERIES NPN HIGH VOLTAGE TRANSISTORS TO-126 PACKAGE - MECHANICAL OUTLINE A D E F G BACKSIDE 1 2 3 N M H B J C K L R2 Lead Code 1) Emitter 2) Collector 3) Base Mounting Pad is common to Pin 2. SYMBOL A B C D E F G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.094 0.106 2.40 2.70 0.050 1.27 0.015 0.030 0.38 0.75 0.291 0.307 7.40 7.80 0.148 3.75 0.118 0.126 3.00 3.20 0.413 0.435 10.50 11.05 0.618 15.70 0.025 0.035 0.64 0.90 0.089 2.25 0.177 4.50 0.045 0.055 1.14 1.39 0.083 2.10 TO-126 (REV:R2)