PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET(R) Power MOSFET Applications High frequency DC-DC converters Lead-Free l l VDSS RDS(on) max ID 0.040 56A 200V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. Units 56 40 220 380 2.5 20 10 -55 to + 175 A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA Notes Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient through www.irf.com Typ. Max. Units --- 0.50 --- 0.40 --- 62 C/W are on page 8 1 7/7/04 IRFB260NPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 --- --- 2.0 --- --- --- --- Typ. --- 0.26 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.040 VGS = 10V, ID = 34A 4.0 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 29 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 150 24 67 17 64 52 50 4220 580 140 5080 230 500 Max. Units Conditions --- S VDS = 50V, ID = 34A 220 ID = 34A 37 nC VDS = 160V 100 VGS = 10V --- VDD = 100V --- ID = 34A ns --- R G = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 450 34 38 mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 56 --- --- showing the A G integral reverse --- --- 220 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 34A, VGS = 0V --- 240 360 ns TJ = 25C, IF = 34A --- 2.1 3.2 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB260NPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 4.5V 1 20s PULSE WIDTH Tj = 25C 100 0.1 4.5V 10 1 20s PULSE WIDTH Tj = 175C 0.1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 3.5 TJ = 25C VDS = 15V 20s PULSE WIDTH 5.0 7.0 9.0 11.0 13.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 15.0 2.5 (Normalized) 100.00 3.0 I D = 56A 3.0 T J = 175C RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current () 1000.00 1.00 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 10.00 10 VDS, Drain-to-Source Voltage (V) 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFB260NPbF 100000 VGS , Gate-to-Source Voltage (V) Ciss 1000 Coss Crss 100 10 1 10 100 I D = 34A 7 5 2 0 1000 0 1000.00 ID, Drain-to-Source Current (A) 1000 100.00 90 120 10.00 T J = 25C OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 10 1msec Tc = 25C Tj = 175C Single Pulse VGS = 0V 10msec 1 0.10 0.0 0.5 150 100 T J = 175C 1.00 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD, Reverse Drain Current (A) 30 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1.0 1.5 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 160V VDS = 100V VDS = 40V 10 Coss = Cds + Cgd 10000 C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 2.0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFB260NPbF 60 RD V DS VGS 50 D.U.T. RG + -VDD ID , Drain Current (A) 40 10V Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC) 1 D = 0.50 0.1 0.20 Thermal Response 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +TC 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB260NPbF 850 15V ID TOP DRIVER D.U.T RG + V - DD IAS 20V tp 680 A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS 14A 24A 34A BOTTOM 510 340 170 0 25 50 75 100 125 150 175 ( C) Starting T , Junction Temperature J Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50K 12V QGS .2F .3F QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFB260NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFB260NPbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- COLLECTOR 4- DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- EMITTER 3- SOURCE 4 - DRAIN HEXFET 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPLE : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.78mH RG = 25, IAS = 34A. ISD 34, di/dt 480A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.7/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/