TC7W66F/FU/FK
2009-09-30
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7W66F,TC7W66FU,TC7W66FK
Dual Bilateral Switch
The TC7W66 is a high speed CMOS Dual Bilateral Switch
fabricated with silicon gate CMOS technology.
It consists of four independent high speed switches capable of
controlling either digital or analog signals while maintaining the
CMOS low power dissipation.
Control input (C) is provided to control the switch.
The switch turns ON while the C input is high, and the switch
turns OFF while low.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: tpd = 7 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 1 μA (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Low ON resistance: RON = 50 Ω (typ.) at VCC = 9 V
• High degree of linearity: THD = 0.05 (typ.) at VCC = 5 V
• Pin and function compatible with TC4W66
Marking
TC7W66F
TC7W66FU
TC7W66FK
Weight
SOP8-P-1.27: 0.05 g (typ.)
SSOP8-P-0.65: 0.02 g (typ.)
SSOP8-P-0.50A: 0.01 g (typ.)
Pin Configuration (top view)
Lot No.
Part No.
7 W 6 6 F
FM8
SM8
Lot No.
Part No.
7 W 6 6
US8
Part No.
W
6 6
1
IN/OUT 1
2
OUT/IN 1
3
CONT 2
OUT/IN 2
6
IN/OUT 2
5
4
GND
VCC
8
CONT 1
7
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Supply voltage range VCC −0.5 to 13 V
DC input voltage VIN −0.5 to VCC + 0.5 V
DC output voltage VOUT −0.5 to VCC + 0.5 V
Input diode current IIK ±20 mA
Output diode current IOK ±20 mA
DC output current IOUT ±25 mA
DC VCC/ground current ICC ±25 mA
300 (FM8, SM8)
Power dissipation PD
200 (US8)
mW
Storage temperature range Tstg −65 to 150 °C
Lead temperature (10 s) TL 260 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Logic Diagram
Logic Diagram (1/2 TC7W66) Truth Table
Control Switch Function
H ON
L OFF
CONT
OUT/IN
IN/OUT
X1
I I
IN/OUT 1 OUT/IN 1
(7)
(1) (2)
OUT/IN 2
(3)
(5) (6)
CONT 1
IN/OUT 2
CONT 2
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Operating Ranges
Characteristics Symbol Rating Unit
Supply voltage VCC 2 to 12 V
Control input voltage VIN 0 to VCC V
Switch I/O voltage VI/O 0 to VCC V
Operating temperature range Topr −40 to 85 °C
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
0 to 400 (VCC = 6.0 V)
Input rise and fall time tr, tf
0 to 250 (VCC = 10.0 V)
ns
Electrical Characteristics
DC Electrical Characteristics
Ta = 25°C Ta = –40
to 85°C
Characteristics Symbol Test Condition
VCC (V) Min Typ. Max Min Max
Unit
2.0 1.5 ⎯ ⎯ 1.5 ⎯
4.5 3.15 ⎯ ⎯ 3.15 ⎯
9.0 6.3 ⎯ ⎯ 6.3 ⎯
High level VIHC ⎯
12.0 8.4 ⎯ ⎯ 8.4 ⎯
2.0 ⎯ ⎯ 0.5 ⎯ 0.5
4.5 ⎯ ⎯ 1.35 ⎯ 1.35
9.0 ⎯ ⎯ 2.7 ⎯ 2.7
Control input
voltage
Low level VILC ⎯
12.0 ⎯ ⎯ 3.6 ⎯ 3.6
V
4.5 ⎯ 96 170 ⎯ 200
9.0 ⎯ 55 85 ⎯ 100
VIN = VIHC
VI/O = VCC to GND
II/O ≤ 1 mA 12.0 ⎯ 45 80 ⎯ 90
2.0 ⎯ 160 ⎯ ⎯ ⎯
4.5 ⎯ 70 100 ⎯ 130
9.0 ⎯ 50 75 ⎯ 95
ON resistance RON
VIN = VIHC
VI/O = VCC or GND
II/O ≤ 1 mA
12.0 ⎯ 45 70 ⎯ 90
Ω
4.5 ⎯ 10 ⎯ ⎯ ⎯
9.0 ⎯ 5 ⎯ ⎯ ⎯
Difference of ON
resistance between
switches
ΔRON
VIN = VIHC
VI/O = VCC to GND
II/O ≤ 1 mA 12.0 ⎯ 5 ⎯ ⎯ ⎯
Ω
Input/output leakage
current (switch off) IOFF
VOS = VCC or GND
VIS = GND or VCC
VIN = VILC
12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA
Switch input leakage
current
(switch on output open)
IIZ VOS = VCC or GND
VINH = VIHC 12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA
Control input current IIN V
IN = VCC or GND 6.0 ⎯ ⎯ ±100 ⎯ ±1000 nA
6.0 ⎯ ⎯ 1.0 ⎯ 10.0
9.0 ⎯ ⎯ 4.0 ⎯ 40.0
Quiescent supply current ICC V
IN = VCC or GND
12.0 ⎯ ⎯ 8.0 ⎯ 80.0
μA
TC7W66F/FU/FK
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AC Electrical Characteristics (CL = 50 pF, input tr = tf = 6 ns)
Ta = 25°C Ta = −40
to 85°C
Characteristics Symbol Test Condition
VCC (V) Min Typ. Max Min Max
Unit
2.0 ⎯ 10 50 ⎯ 65
4.5 ⎯ 4 10 ⎯ 13
9.0 ⎯ 3 8 ⎯ 10
Phase difference between
input and output φI/O ⎯
12.0 ⎯ 3 7 ⎯ 9
ns
2.0 ⎯ 18 100 ⎯ 125
4.5 ⎯ 8 20 ⎯ 25
9.0 ⎯ 6 12 ⎯ 22
Output enable time tpZL
tpZH RL = 1 kΩ
12.0 ⎯ 6 12 ⎯ 18
ns
2.0 ⎯ 20 115 ⎯ 145
4.5 ⎯ 10 23 ⎯ 29
9.0 ⎯ 8 20 ⎯ 25
Output disable time tpLZ
tpHZ RL = 1 kΩ
12.0 ⎯ 8 18 ⎯ 22
ns
2.0 ⎯ 30 ⎯ ⎯ ⎯
4.5 ⎯ 30 ⎯ ⎯ ⎯
9.0 ⎯ 30 ⎯ ⎯ ⎯
Maximum control input
frequency ⎯
RL = 1 kΩ
CL = 15 pF
VOUT = 1/2 VCC
12.0 ⎯ 30 ⎯ ⎯ ⎯
MHz
Control input capacitance CIN ⎯ ⎯ 5 10 ⎯ 10 pF
Switch terminal
capacitance CI/O ⎯ ⎯ 6 ⎯ ⎯ ⎯ pF
Feed through capacitance CIOS ⎯ ⎯ 0.5 ⎯ ⎯ ⎯ pF
Power dissipation
capacitance CPD (Note) ⎯ 15 ⎯ ⎯ ⎯ pF
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD • VCC • fIN + ICC/2
Analog Switch Characteristics (GND = 0 V, Ta = 25°C)
Characteristics Symbol Test Condition
VCC (V)
Typ. Unit
4.5 0.05
Sine wave distortion
(T.H.D) ⎯
fIN = 1 kHz,
VIN = 4.0 Vp-p @VCC = 4.5 V
RL = 10 kΩ,
VIN = 8.0 Vp-p @VCC = 9.0 V
CL = 50 pF 9.0 0.04
%
4.5 200
Frequency response
(switch ON) fmax
Adjust fIN voltage to obtain 0dBm at VOS
Increase fIN frequency until dB
Meter reads −3dB
RL = 50 Ω,CL = 10 pF
fIN = 1 MHz, sine wave 9.0 200
MHz
4.5 −60
Feedthrough attenuation
(switch OFF) ⎯
VIN is centered at VCC/2
Adjust input for 0dBm
RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, sine wave 9.0 −60
dB
4.5 60
Crosstalk
(control input to signal output) ⎯ RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, square wave (tr = tf = 6 ns) 9.0 100
mV
4.5 −60
Crosstalk
(between any switches) ⎯
Adjust VIN to obtain 0dBm at input
RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, sine wave 9.0 −60
dB
TC7W66F/FU/FK
2009-09-30
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Switching Characteristics Test Circuits
1. tpLZ, tpHZ, tpZL, tpZH
2. Cross Talk
(control input-switch output)
f
in = 1 MHz, duty = 50%, tr = tf = 6 ns
3. Feed Through Attenuation
0.1 μF
C
GND
O/I
50 pF
VCC
I/O
VCC
600 Ω
600 Ω
VIN
from
P. G.
C
GND
O/I
50 pF
VCC
I/OS1 S2
1 kΩ
VCC
50%
tpZH tpHZ
90%
tpZL
50%
10%
tpLZ
50%
6 ns 6 ns
10%
10%
VCC
GND
VOH
VOL
90% 90%
50%
VOH
VOL
VC
VO/I
S1 = VCC
S2 = GND
VO/I
S1 =GND
S2 = VCC
from
P. G.
C
GND
O/I
50 pF
VCC
I/O
600 Ω
VCC
600 Ω
VCC
GND
TC7W66F/FU/FK
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4. Clos, CI/O
5. Cross Talk
(between any two switches)
6. Frequency Response
(switch ON)
C
GND
O/I
CI/O
VCC
I/O
VCC
COS
CIOS
0.1 μF
C
O/I
50 pF
VCC
I/O
600 Ω
C
GND
O/I
50 pF
VCC
I/O
VCC
600 Ω
600 Ω
600 Ω
VIN
0.1 μF
C
GND
O/I
10 pF
VCC
I/O
50 Ω
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Package Dimensions
Weight: 0.05 g (typ.)
TC7W66F/FU/FK
2009-09-30
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Package Dimensions
Weight: 0.02 g (typ.)
TC7W66F/FU/FK
2009-09-30
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Package Dimensions
Weight: 0.01 g (typ.)
TC7W66F/FU/FK
2009-09-30
10
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relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for
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