AP4085W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic BVDSS 500V RDS(ON) 0.43 ID G 16A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-3P S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 V ID@TC=25 Continuous Drain Current, VGS @ 10V 16 A ID@TC=100 Continuous Drain Current, VGS @ 10V 11 A 64 A 208 W 159 mJ 16 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 0.6 /W Rthj-a Thermal Resistance Junction-ambient Max. 40 /W Data and specifications subject to change without notice 200704071-1/4 AP4085W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=8A - - 0.43 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 3 - 5 V gfs Forward Transconductance VDS=10V, ID=8A - 6.3 - S IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=30V - - 100 nA ID=16A - 48 77 nC 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=200V - 9 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 32 - nC VDD=200V - 48 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=8A - 134 - ns td(off) Turn-off Delay Time RG=50,VGS=10V - 195 - ns tf Fall Time RD=25 - 121 - ns Ciss Input Capacitance VGS=0V - 1205 1930 pF Coss Output Capacitance VDS=30V - 255 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Min. Typ. Source-Drain Diode Symbol Parameter 3 Test Conditions Max. Units VSD Forward On Voltage IS=16A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=16A, VGS=0V - 630 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 13 - uC Notes: 1.Pulse width limited by Max junction temperature. 2.Starting Tj=25oC , VDD=99V , L=1mH , RG=25 3.Pulse test THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 AP4085W 30 16 o T C =150 C 10 V 9.0 V 12 ID , Drain Current (A) ID , Drain Current (A) 10V 9.0 V 8.0 V 7.0V o T C =25 C 8.0 V 20 7.0V 10 8 V G = 6.0V 4 V G = 6 . 0V 0 0 0.0 4.0 8.0 12.0 16.0 20.0 0.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 12.0 16.0 20.0 24.0 Fig 2. Typical Output Characteristics 2.8 1.2 I D =8A V G =10V 2.4 1.1 Normalized RDS(ON) Normalized BVDSS (V) 8.0 V DS , Drain-to-Source Voltage (V) 1 2.0 1.6 1.2 0.9 0.8 0.4 0.8 -50 0 50 100 -50 150 T j , Junction Temperature ( o C) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 1.5 8 1.3 T j =150 o C Normalized VGS(th) (V) 10 T j =25 o C IS(A) 6 4 1.1 0.9 0.7 2 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4085W 10 I D =16A V DS =200V C iss 1000 8 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 10000 12 6 C oss 100 4 C rss 2 10 0 0 10 20 30 40 50 1 60 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 33 37 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 ID (A) 1ms 10ms 100ms DC 1 0 o T C =25 C Single Pulse Normalized Thermal Response (Rthjc) Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0 0.1 1 10 100 1000 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-3P E A Millimeters SYMBOLS c1 D D1 b1 b2 MIN NOM MAX A 4.50 4.80 5.10 b b1 b2 c c1 0.90 1.00 1.30 1.80 2.50 3.20 1.30 -- 2.30 0.40 0.60 0.90 1.40 -- 2.20 D 19.70 20.00 20.30 D1 14.70 15.00 15.30 E 15.30 -- 16.10 e 4.45 5.45 6.45 L 17.50 -- 20.50 3.00 3.20 3.40 L c 1.All Dimensions Are in Millimeters. b 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-3P Part Number Package 4085W YWWSSS LOGO Date Code (YWWSSS) Y Last Digit Of The Year WWWeek SSS Sequence