FMV22N60S1FD - Fuji Electric

18325

JANUARY 2014

FMV22N60S1FD FUJI POWER MOSFET

Super J-MOS series N-Channel enhancement mode power MOSFET

Features

Low on-state resistance

Low switching loss

easy to use (more controllabe switching dV/dt by Rg)

Applications

UPS

Server

Telecom

Power conditioner system

Power supply

Outline Drawings [mm]

Equivalent circuit schematic

Gate(G)

Source(S)

Drain(D)

Connection

Gate

Drain

Source DIMENSIONS ARE IN MILLIMETERS.

TO-220F(SLS)

http://www.fujielectric.com/products/semiconductor/

Absolute Maximum Ratings at TC=25°C (unless otherwise specied)

Description Symbol Characteristics Unit Remarks

Drain-Source Voltage VDS 600 V

VDSX 600 V VGS=-30V

Continuous Drain Current ID

±22 A Tc=25°C Note*1

±14 A Tc=100°C Note*1

Pulsed Drain Current IDP ±66 A Note*1

Gate-Source Voltage VGS ±30 V

Repetitive and Non-Repetitive

Maximum Avalanche Current IAR 6.6 A Note *2

Non-Repetitive

Maximum Avalanche Energy EAS 548.9 mJ Note *3

Maximum Drain-Source dV/dt dVDS/dt 50 kV/μs VDS≤ 600V

Peak Diode Recovery dV/dt dV/dt 30 kV/μs Note *4

Peak Diode Recovery -di/dt -di/dt 100 A/μs Note *5

Maximum Power Dissipation PD

2.16 WTa=25°C

70 Tc=25°C

Operating and Storage Temperature range Tch 150 °C

Tstg -55 to +150 °C

Note *1 : Limited by maximum channel temperature.

Note *2 : Tch≤150°C, See Fig.1 and Fig.2

Note *3 : Starting Tch=25°C, IAS=4A, L=62.9mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2

EAS limited by maximum channel temperature and avalanche current.

Note *4 : IF≤-ID, -di/dt=100A/μs, VDS peak≤600V, Tch≤150°C.

Note *5 : IF≤-ID, dV/dt=30kV/μs, VDS peak≤600V, Tch≤150°C.

Electrical Characteristics at TC=25°C (unless otherwise specied)

• Static Ratings

Description Symbol Conditions min. typ. max. Unit

Drain-Source Breakdown Voltage BVDSS

ID=250μA

VGS=0V 600 - - V

Gate Threshold Voltage VGS(th)

ID=500μA

VDS=VGS

3.0 4.0 5.0 V

Zero Gate Voltage Drain Current IDSS

VDS=600V

VGS=0V Tch=25°C - - 25

μA

VDS=480V

VGS=0V Tch=125°C - 120 -

Gate-Source Leakage Current IGSS

VGS= ± 30V

VDS=0V - 10 100 nA

Drain-Source On-State Resistance RDS(on)

ID=11A

VGS=10V - 0.144 0.170 Ω

Gate resistance RGf=1MHz, open drain - 3.5 - Ω

FMV22N60S1FD

FUJI POWER MOSFET

http://www.fujielectric.com/products/semiconductor/

• Dynamic Ratings

Description Symbol Conditions min. typ. max. Unit

Forward Transconductance gfs

ID=11A

VDS=25V 9.5 19 - S

Input Capacitance Ciss VDS=400V

VGS=0V

f=250kHz

- 1580 -

Output Capacitance Coss - 47 -

Reverse Transfer Capacitance Crss - 3.5 -

Effective output capacitance,

energy related (Note *6) Co(er)

VGS=0V

VDS=0…400V - 125 -

Effective output capacitance,

time related (Note *7) Co(tr)

VGS=0V

VDS=0…400V

ID=constant

- 415 -

Turn-On Time td(on)

VDD=400V, VGS=10V

ID=11A, RG=27Ω

See Fig.3 and Fig.4

- 85 -

tr- 27 -

Turn-Off Time td(off) - 150 -

tf- 18 -

Total Gate Charge QG

VDD=400V, ID=22A

VGS=10V

See Fig.5

- 58 -

Gate-Source Charge QGS - 17.5 -

Gate-Drain Charge QGD - 23.5 -

Drain-Source crossover Charge QSW -9-

• Reverse Diode

Description Symbol Conditions min. typ. max. Unit

Avalanche Capability IAV

L=14mH,Tch=25°C

See Fig.1 and Fig.2 6.6 - - A

Diode Forward On-Voltage VSD

IF=22A,VGS=0V

Tch=25°C - 1 1.35 V

Reverse Recovery Time trr

IF=22A, VDD=400V

-di/dt=100A/μs

RG=150Ω, Tch=25°C

See Fig.6 and Fig.7

- 165 - ns

Reverse Recovery Charge Qrr - 1.1 - μC

Peak Reverse Recovery Current Irp - 13.2 - A

Thermal Resistance

Parameter Symbol min. typ. max. Unit

Channel to Case Rth(ch-c) - - 1.79 °C/W

Channel to Ambient Rth(ch-a) - - 58 °C/W

Note *6 : Co(er) is a xed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V.

Note *7 : Co(tr) is a xed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 400V.

FUJI POWER MOSFET

FMV22N60S1FD

http://www.fujielectric.com/products/semiconductor/

0 5 10 15 20 25

7.5V

6.5V

20V

10V

ID [A]

VDS [V]

Typical Output Characteristics

ID=f(VDS): 80μs pulse test, Tch=25°C

VGS=6V

0 5 10 15 20 25

7.5V

20V

10V

6.5V

ID [A]

VDS [V]

Typical Output Characteristics

ID=f(VDS): 80μs pulse test, Tch=150°C

VGS=5.5V

0 10 20 30 40 50 60 70

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

0.60

10V

7.5V

6.5V

6V 7V

RDS(on) [Ω ]

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID): 80μs pulse test, Tch=25°C

VGS=20V

0 10 20 30 40

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

5.5V 6.5V

7.5V

RDS(on) [Ω ]

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID): 80μs pulse test, Tch=150°C

10V

VGS=20V

0.1 1 10 100 1000

0.01

0.1

100

Power loss waveform :

Square waveform

Power loss waveform :

Square waveform

ID [A]

VDS [V]

Safe Operating Area

ID=f(VDS): Duty=0(Single pulse), Tc=25°C

1μs

10μs

1ms

100μs

0 25 50 75 100 125 150

Allowable Power Dissipation

PD=f(Tc)

PD [W]

Tc [°C]

FMV22N60S1FD

FUJI POWER MOSFET

http://www.fujielectric.com/products/semiconductor/

-50 -25 0 25 50 75 100 125 150

typ.

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch): VDS=VGS, ID=500μA

VGS(th) [V]

Tch [°C]

-50 -25 0 25 50 75 100 125 150

0.0

0.1

0.2

0.3

0.4

0.5

0.6

RDS(on) [Ω ]

Tch [°C]

typ.

max.

Drain-Source On-state Resistance

RDS(on)=f(Tch): ID=11A, VGS=10V

0 1 2 3 4 5 6 7 8 9 10

0.1

100

Tch=25℃

150℃

ID[A]

VGS[V]

Typical Transfer Characteristic

ID=f(VGS): 80μs pulse test, VDS=25V

0.1 1 10 100

0.1

100

150℃

Tch=25℃

gfs [S]

ID [A]

Typical Transconductance

gfs=f(ID): 80μs pulse test, VDS=25V

0.0 0.5 1.0 1.5 2.0

0.1

100

Tch=25℃

150℃

IF [A]

VSD [V]

Typical Forward Characteristics of Reverse Diode

IF=f(VSD): 80μs pulse test

0.1 1 10 100

100

1000

10000

100000

C [pF]

VDS [V]

Typical Capacitance

C=f(VDS): VGS=0V, f=250kHz

Crss

Coss

Ciss

FUJI POWER MOSFET

FMV22N60S1FD

http://www.fujielectric.com/products/semiconductor/

0 100 200 300 400 500 600

Typical Coss stored energy

Eoss [uJ]

VDS [V]

0.1 1 10 100

100

1000

10000

Typical Switching Characteristics vs. ID Tch=25°C

t=f(ID): Vdd=400V, VGS=10V/0V, RG=27Ω

td(on)

td(off)

t [ns]

ID [A]

0 10 20 30 40 50 60

400V

120V

Typical Gate Charge Characteristics

VGS=f(Qg): ID=22A, Tch=25°C

Qg [nC]

Vdd=480V

VGS [V]

0 25 50 75 100 125 150

500

1000

IAS=6.6A

IAS=4A

IAS=2A

EAV [mJ]

starting Tch [°C]

Maximum Avalanche Energy vs. startingTch

E(AV)=f(starting Tch):Vcc=60V,I(AV)<=6.6A

10-6 10-5 10-4 10-3 10-2 10-1 100

10-3

10-2

10-1

100

101

Transient Thermal Impedance

Zth(ch-c)=f(t):D=0

Zth(ch-c) [℃/W]

t [sec]

FMV22N60S1FD

FUJI POWER MOSFET

http://www.fujielectric.com/products/semiconductor/

Fig.1 Avalanche Test circuit Fig.2 Operating waveforms of Avalanche Test

Fig.3 Switching Test circuit Fig.4 Operating waveform of Switching Test

Fig.5 Operating waveform of Gate charge Test

Fig.7 Operating waveform of Reverse recovery Test

VGS

VDS

QGS QGD

VGS,VDS

QSW

10V

IAV

BVDSS

VDS

VGS

+10V

-15V

D.U.T

VDD

Fig.6 Reverse recovery Test circuit

VGS

VDS

VDS ×90%

td(on) tr td(off) tf

VGS ×10%

VGS ×90%

VDS ×10%

VDS ×90%

VDS ×10%

VDD

RGD.U.T

Diode

＋

VDD

D.U.T

Same as

D.U.T

＋

trr

Qrr=∫ir・dt

trr

Irp

Irp×10%

VDS peak

VDS

FUJI POWER MOSFET

FMV22N60S1FD

http://www.fujielectric.com/products/semiconductor/

Trademark

Type name

Date code & Lot No.

Y: Last digit of year

M: Month code 1~9 and O,N,D

NNN: Lot. serial number

Under bar of date code

: means lead-free mark

YMNNN

* The font (font type,size) and the trademark-size

might be actually different.

Country of

origin mark.

" " (Blank): Japan

P : Philippines

22F60S1

Connection

Gate

Drain

Source

DIMENSIONS ARE IN MILLIMETERS.

Outview: TO-220F(SLS) Package

Marking

FMV22N60S1FD FUJI POWER MOSFET

http://www.fujielectric.com/products/semiconductor/

WARNING

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