TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Product Data Sheet
August 5, 2008
1
30 GHz 5-Bit Phase Shifter TGP2100
Key Features and Performance
Positive Control Voltage
Single-Ended Logic
CMOS Compatible
Frequency Range: 28 -
32 GHz
0.25µm pHEMT
3MI Technology
Chip dimensions:
1.88 x 0.75 x 0.1 mm
(0.074 x 0.030 x 0.004 inches)
Preliminary Measured Performance
-20
-15
-10
-5
0
5
10
15
20
1 3 5 7 9 1113151719212325272931
State
Phase Error (deg)
28GHz
29GHz
30GHz
31GHz
32GHz
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32
Frequency (GHz)
RMS Phase Shift Error (deg)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
RMS Amplitude Error (dB)
RMS Phase Shift Error
RMS Amplitude Error
Note: Datasheet is subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Product Data Sheet
August 5, 2008
2
TGP2100
TABLE I
MAXIMUM RATINGS
Symbol Parameter Value Notes
VCControl Voltage Range 0 - +8 V 1/ 2/
IDControl Supply Current 1 mA 1/ 2/
PIN Input Continuous Wave Power 20 dBm 1/ 2/
PDPower Dissipation 0.1 W 1/ 2/
TCH Operating Channel Temperature 150 0C3/
TMMounting Temperature
(30 Seconds)
320 0C
TSTG Storage Temperature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power
shall not exceed PD at a package base temperature of 70°C
3/ Junction operating temperature will directly affect the device median time to
failure (MTTF). For maximum life, it is recommended that junction temperatures
be maintained at the lowest possible levels.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Product Data Sheet
August 5, 2008
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Preliminary Measured Data
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32
Frequency (GHz)
RMS Phase Shift Error (deg)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
RMS Amplitude Error (dB)
RMS Phase Shift Error
RMS Amplitude Error
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
28 29 30 31 32
Frequency (GHz)
S21 (dB)
TGP2100
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Product Data Sheet
August 5, 2008
4
Preliminary Measured Data
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
28 29 30 31 32
Frequency (GHz)
S11 (dB)
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
28 29 30 31 32
Frequency (GHz)
S22 (dB)
TGP2100
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Product Data Sheet
August 5, 2008
5
Preliminary Measured Data
-20
-15
-10
-5
0
5
10
15
20
135791113151719212325272931
State
Phase Error (deg)
28GHz
29GHz
30GHz
31GHz
32GHz
-5
-4
-3
-2
-1
0
1
2
3
4
5
1 3 5 7 9 1113151719212325272931
State
Amplitude Error (dB)
28GHz
29GHz
30GHz
31GHz
32GHz
TGP2100
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Product Data Sheet
August 5, 2008
6
State Table
State
V
-Supply
V
-11.25
V
-22.5
V
-45
V
-90
V
-180 Phase Shift
0 +5V 0V 0V 0V 0V 0V Reference
1 +5V +5V 0V 0V 0V 0V 11.25°
2 +5V 0V +5V 0V 0V 0V 22.5°
3 +5V +5V +5V 0V 0V 0V 33.75°
4 +5V 0V 0V +5V 0V 0V 45°
5 +5V +5V 0V +5V 0V 0V 56.25°
6 +5V 0V +5V +5V 0V 0V 67.5°
7 +5V +5V +5V +5V 0V 0V 78.75°
8 +5V 0V 0V 0V +5V 0V 90°
9 +5V +5V 0V 0V +5V 0V 101.25°
10+5V0V+5V0V+5V0V112.5°
11 +5V +5V +5V 0V +5V 0V 123.75°
12+5V0V 0V+5V+5V0V 135°
13 +5V +5V 0V +5V +5V 0V 146.25°
14 +5V 0V +5V +5V +5V 0V 157.5°
15 +5V +5V +5V +5V +5V 0V 168.75°
16 +5V 0V 0V 0V 0V +5V 180°
17 +5V +5V 0V 0V 0V +5V 191.25°
18 +5V 0V +5V 0V 0V +5V 202.5°
19 +5V +5V +5V 0V 0V +5V 213.75°
20 +5V 0V 0V +5V 0V +5V 225°
21 +5V +5V 0V +5V 0V +5V 236.25°
22+5V0V+5V+5V0V+5V247.5°
23 +5V +5V +5V +5V 0V +5V 258.75°
24+5V0V0V0V+5V+5V270°
25 +5V +5V 0V 0V +5V +5V 281.25°
26 +5V 0V +5V 0V +5V +5V 292.5°
27 +5V +5V +5V 0V +5V +5V 303.75°
28 +5V 0V 0V +5V +5V +5V 315°
29 +5V +5V 0V +5V +5V +5V 326.25°
30 +5V 0V +5V +5V +5V +5V 337.5°
31 +5V +5V +5V +5V +5V +5V 348.75°
TGP2100
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Product Data Sheet
August 5, 2008
7
Mechanical Drawing
TGP2100
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Product Data Sheet
August 5, 2008
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Chip Assembly & Bonding Diagram
TGP2100
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Product Data Sheet
August 5, 2008
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200°C.
Assembly Process Notes
TGP2100