The S11153-01MT photo IC has spectral response close to human eye sensitivity. Two active areas are made on a single chip.
Almost only the visible range can be measured by fi nding the difference between the two output signals in the internal current
amplifi er circuit. Compared to the previous type, the S11153-01MT has wide operating temperature range (-40 to +100 °C).
Photo IC diode
S11153-01MT
Wide operating temperature: -40 to +100 °C
www.hamamatsu.com 1
Energy-saving sensor for TVs, etc.
Various types of light level measurement
Spectral response close to human eye sensitivity
Lower output-current variation compared with
phototransistors
Excellent linearity
Suitable for lead-free refl ow (RoHS compliance)
Low output deviation by different color temperature
light source
Absolute maximum ratings
Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition Value Unit
Reverse voltage VRTa=25 °C -0.5 to +12 V
Photocurrent ILTa=25 °C 5 mA
Forward current IFTa=25 °C 5 mA
Power dissipation*1P Ta=25 °C 350 mW
Operating temperature Topr -40 to +100 °C
Storage temperature Tstg -40 to +125 °C
Reflow soldering conditions*2Tsol Peak temperature 250 °C, two times -
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*1: Power dissipation decreases at a rate of 2.0 mW/°C above Ta=25 °C.
*2: JEDEC level 4
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range λ- 320 to 820 - nm
Peak sensitivity wavelength λp- 560 - nm
Dark current IDVR=5 V - 1.0 50 nA
Photocurrent ILVR=5 V, 2856 K, 100 lx 325 410 495 μA
Rise time*3tr 10 to 90%, VR=7.5 V
RL=10 kΩ, λ=560 nm - 6.0 - ms
Fall time*3tf 90 to 10%, VR=7.5 V
RL=10 kΩ, λ=560 nm - 2.5 - ms
Automotive illuminance sensorWide operating temperature: -40 to +100 °C
Features Applications
Photo IC diode S11153-01MT
2
Spectral response Linearity
Wavelength (nm)
Relative sensitivity (%)
0.1
0.2
0.3
0.4
0.5
0.7
0.9
0.6
0.8
1.0
0
200 400 600 800 1000 1200
(Typ. Ta=25 °C, VR=5 V)
S11153-01MT
Human eye sensitivity
Pulsed light
from LED
(λ=560 nm)
Vout
Load
resistance RL
7.5 V
90 % 2.5 V
10 %
Vout
tr tf
0.1 µF
Illuminance (lx)
Photocurrent
1 µA
10 µA
100 µA
1 mA
10 mA
100 nA
0.1 1 10 100 100
0
(Typ. Ta=25 °C, VR=5 V, 2856 K)
KPICB0157EA KPICB0158EA
*3: Rise/fall time measurement method
KPICC0041EA
Photo IC diode S11153-01MT
Rise/fall times vs. load resistance Photocurrent vs. ambient temperature
1000
100
10
1
0.1
100 1 k 10 k
Load resistance (Ω)
100 k 1 M
Rise/fall times (ms)
(Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V)
tr
tf
0.8
1.0
1.2
1.4
0.6
-25 0 25 50 75 100
* Normalized photocurrent 1 at Ta=25 °C
Ambient temperature (°C)
Photocurrent (relative value) *
90°
80°
70°
60°
50°
40°
30°
90°
80°
70°
60°
50°
40°
30°
20° 10° 0° 10° 20°
020406080100 20 40 60 80 100
Relative sensitivity (%)
(Typ. Ta=25 °C, tungsten lamp)
X direction
Y direction
X direction
Y direction
KPICB0115EA
KPICB0165EA
3
Directivity
KPICB0159EA
Photo IC diode S11153-01MT
Photodiode
for signal offset
Cathode
Anode
CLRL
Vout
Reverse bias
power supply
The drawing surrounded
by the dotted line shows
a schematic diagram of
the photo ic.
Current amp
(approx. 30000 times)
Photodiode
for signal detection
Internal protection
resistance
(approx. 150 Ω)
The photo IC diode must be reverse-biased so
that a positive potential is applied to the cathode.
To eliminate high-frequency components, we rec-
ommend placing a load capacitance CL in parallel
with load resistance RL as a low-pass fi lter.
Cut-off frequency fc 2π CL RL
1
4
Block diagram
KPICC0132EA
Dimensional outline (unit: mm)
Photosensitive area
3.2
3.5 ± 0.2
4.5
2.6
1.5
Recommended land pattern
2.2
0.8
0.8 ± 0.2
0
.8 ± 0.2 1.0
0.5
1.0
2.7
2.6
0.85
0.8
1.8 ± 0.2
1.5
3.1
2.4
Silicone resin
Cathode
Anode
Tolerance unless otherwise
noted: ±0.1
Chip position accuracy with
respect to package center
X, Y ±0.2
Electrode
Packing: reel (1000 pcs/reel)
KPICA0087EA
Photo IC diode S11153-01MT
220 lx
450 lx
600 lx
800 lx
1000 lx
1100 lx
Reverse voltage (V)
012345
(Typ. Ta=25 °C)
Photocurrent (mA)
5
4
3
2
1
0
Saturation region
Approx. 1260 lx
Internal protection resistance
Rin: Approx. 150 Ω
Saturation region
Approx. 650 lx
Rising voltage
Load line
Vcc=3 V, RL=1 kΩ
Load line
Vcc=5 V, RL=1 kΩ
KPICB0160EA
Figure 2 Photocurrent vs. reverse voltage
5
Operating voltage, output characteristics
Figure 2 shows photocurrent vs. reverse voltage characteristics (light source: LED) measured using the circuit shown in Figure 1. Out-
put curves are plotted at different illuminance levels equivalent to A light source. The output curves start rising at a reverse voltage of
approx. 0.7 V.
Photo IC diode contains an internal resistance of approx. 150 Ω to protect against excessive current. The reverse voltage VR of a photo
IC diode is the sum of Vbe (ON) and the voltage drop across the protective resistance Rin.
VR = Vbe (ON) + I × Rin
RL
(external resistance)
I
Photo IC
diode
Rin=150 Ω
(internal protection resistance) Vcc
Vbe (ON)=0.7 V
(photodiode, current amplifier)
KPICC0128EB
Figure 1 Measurement circuit
Photo IC diode S11153-01MT
Cat. No. KPIC1080E02 May 2012 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of May, 2012.
The voltage drop (VL) caused by the external resistance is expressed by the following equation and is shown as load lines in Figure 2.
VL = I × RL
Thus, the reverse voltage (VR) for the photo IC diode is given by the following equation:
VR = Vcc - VL = Vcc - IL × RL
In Figure 2, the intersections between the output curves and load lines indicate the saturation region. Maximum detectable light levels
can be estimated from this saturation point. Since the maximum detectable light level is determined by the power supply voltage (Vcc)
and load resistance (RL), change them to meet the required operating conditions.
Note: Vbe (ON) and internal protection resistance have a respective temperature dependence of approximately -2 mV/°C and 0.1 %/°C.
6
