July 2006 Rev 11 1/17
17
STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PA K
MDmesh™ Power MOSFET
General features
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
100% avalanche tested
Low gate input resistance
Tight process control and high manufacturing
yields
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
Switching application
Internal schematic diagram
Type VDSS
(@Tjmax) RDS(on) ID
STB12NM50 550V <0.3512A
STB12NM50-1 550V <0.3512A
STP12NM50 550V <0.3512A
STP12NM50FP 550V <0.3512A
TO-220
D²PAK I²PAK
123
12
3
TO-220FP
1
3
123
www.st.com
Order codes
Part number Marking Package Packaging
STB12NM50T4 B12NM50 D²PAK Tape & reel
STB12NM50-1 B12NM50 I²PAK Tube
STP12NM50 P12NM50 TO-220 Tube
STP12NM50FP P12NM50FP TO-220FP Tube
Contents STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220-
/D²PAK/I²PAK TO-220FP
VGS Gate-source voltage ± 30 V
IDDrain current (continuous) at TC = 25°C 12 12(1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC=100°C 7.5 7.5(1) A
IDM(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 48 48(1) A
PTOT Total dissipation at TC = 25°C 160 35 W
Derating Factor 1.28 0.28 W/°C
VISO Insulation winthstand voltage (DC) -- 2500 V
dv/dt(3)
3. ISD 12A, di/dt 400A/µs, VDD =80%V(BR)DSS
Peak diode recovery voltage slope 15 V/ns
TJ
Tstg
Operating junction temperature
Storage temperature -65 to 150 °C
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220/D²PAK/
I² PAK TO-220FP
Rthj-case Thermal resistance junction-case Max 0.78 3.57 °C/W
Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W
Tl
Maximum lead temperature for soldering
purpose 300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max) 6A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V) 400 mJ
Electrical characteristics STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage ID = 250 µA, VGS= 0 500 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±30V ± 100 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 50µA 345V
RDS(on) Static drain-source on
resistance VGS= 10V, ID= 6A 0.30 0.35
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS =15V, ID = 6A 5.5 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
1000
250
20
pF
pF
pF
Coss eq(2).
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Equivalent output
capacitance VGS=0, VDS =0V to 400V 90 pF
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 6A,
RG = 4.7Ω, VGS = 10V
(see Figure 14)
20
10
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=400V, ID = 12A
VGS =10V
(see Figure 15)
28
8
18
39 nC
nC
nC
RgGate input resistance
f=1MHz Gate DC Bias=0
test signal level=20mV
open drain
1.6
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Electrical characteristics
5/17
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current 11 A
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 48 A
VSD(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage ISD=12A, VGS=0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A,
di/dt = 100A/µs,
VDD=100V, Tj=25°C
(see Figure 16)
270
2.23
16.5
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
(see Figure 16)
340
3
18
ns
µC
A
Electrical characteristics STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characterisics Figure 6. Transfer characteristics
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Electrical characteristics
7/17
Figure 7. Transconductance Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 12. Normalized on resistance vs
temperature
Electrical characteristics STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
8/17
Figure 13. Source-drain diode forward
characteristics
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Test circuit
9/17
3 Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
Package mechanical data STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
10/17
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Package mechanical data
11/17
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
Package mechanical data STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
12/17
L2
A
B
D
E
H
G
L6
F
L3
G1
123
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Package mechanical data
13/17
TO-247 MECHANICAL DATA
1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R0.4 0.015
V2
D2PAK MECHANICAL DATA
3
Package mechanical data STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
14/17
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055
TO-262 (I2PAK) MECHANICAL DATA
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Packaging mechanical data
15/17
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
D2PAK FOOTPRINT
* on sales type
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0795
G 24.4 26.4 0.960 1.039
N100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
Revision history STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
16/17
6 Revision history
Table 7. Revision history
Date Revision Changes
14-Mar-2004 8 Preliminary version
15-Feb-2006 9 New voltage value on first page at tjmax.
05-Apr-2006 10 Inserted ecopack indication
27-Jul-2006 11 New template, no content change
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
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