PD- 91789B IRF7324D1 FETKYa MOSFET / Schottky Diode l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -20V RDS(on) = 0.27 D Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter Max. Units V VDS Drain-to-Source Voltage -20 VGS Gate-to-Source Voltage 12 ID @ TA = 25C Continuous Drain Current, VGS @ 10V -2.2 ID @ TA = 70C Continuous Drain Current, VGS @ 10V -1.8 IDM Pulsed Drain Current -22 PD @TA = 25C Power Dissipation c PD @TA = 70C f Power Dissipation f dV/dt Peak Diode Recovery TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A 2.0 W 1.3 d -0.74 V/ns 16 -55 to + 150 mW/C C Thermal Resistance Parameter g Junction-to-Ambient fg Junction-to-Drain Lead RJL RJA Notes Typ. Max. Units --- 20 C/W --- 62.5 through are on page 8 www.irf.com 1 10/18/04 IRF7324D1 MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter BVDSS RDS(on) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. Typ. Max. Units -20 --- --- --- 0.155 0.270 --- 0.260 0.400 -0.70 --- --- --- --- -1.0 --- --- -25 --- --- 100 --- --- -100 2.4 --- --- --- 5.2 7.8 --- 0.88 --- --- 2.5 --- --- 10 --- --- 12 --- --- 11 --- --- 7.6 --- --- 260 --- --- 140 --- --- 70 --- V V A nA S nC Conditions VGS = 0V, ID = -250A VGS = -4.5V, ID = -1.2A VGS = -2.7V, ID = -0.6A VDS = VGS, ID = -250A VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125C VGS = -12V VGS = 12V VDS = -16V, ID = -2.2A ID = -2.2A VGS = -4.5V VDD = -16V VDD = -10V, VGS = -4.5V ID = -2.2A RG = 6.0 RD = 4.5 VGS = 0V VDS = -15V = 1.0MHz e e e ns pF MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS ISM VSD trr Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time --- --- --- --- --- --- --- 26 -2.2 -22 -1.2 39 V ns TJ = 25C, IS = -2.2A, VGS = 0V TJ = 25C, IF = -2.2A, VDD = -10V Qrr Reverse Recovery Charge --- 24 36 nC di/dt = 100A/s e e Schottky Diode Maximum Ratings Max. Units IF(av) Parameter Max. Average Forward current ISM Max.Peak one cycle Non-repetitive 1.7 1.2 120 Surge Current 11 A Conditions 50% Duty Cycle Rectangular Wave, TA = 25C TA = 70C 5s sine or 3s Rect. Pulse Following any rated 10ms sine or 6ms Rect. Pulse load condition & with VRRM applied Schottky Diode Electrical Specifications VFM Parameter Max. Forward Voltage Drop IRM Max. Reverse Leakage Current Ct dV/dt Max. Junction Capacitance Max. Voltage Rate of Charge 2 Max. Units 0.50 0.62 0.39 0.57 0.05 10 92 3600 V mA Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C VR = 20V TJ = 25C TJ = 125C pF VR = 5Vdc (100kHz to 1MHz) 25C V/s Rated VR www.irf.com IRF7324D1 Power Mosfet Characteristics 1000 100 100 BOTTOM 10 TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V 1 -1.5V 0.1 60s PULSE WIDTH Tj = 25C 10 BOTTOM 1 -1.5V 0.01 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 0.1 -VDS, Drain-to-Source Voltage (V) 1 10 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 100.0 TJ = 25C 10.0 -ISD, Reverse Drain Current (A) -ID, Drain-to-Source Current() VGS -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V TJ = 150C 1.0 VDS = -10V TJ = 150C 10.0 TJ = 25C 1.0 60s PULSE WIDTH VGS = 0V 0.1 1.0 2.0 3.0 4.0 5.0 6.0 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 7.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7324D1 Power Mosfet Characteristics RDS ( on) , Drain-to-Source On Resistance () RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 ID = -2.2A VGS = -4.5V 1.0 0.5 -60 -40 -20 0 20 40 60 0.164 VGS= - 4.5V 0.160 0.156 0.152 VGS= - 5.0V 0.148 0.144 0.140 80 100 120 140 160 0.0 0.5 TJ , Junction Temperature (C) Fig 6. 2.0 2.5 3.0 Typical On-Resistance Vs. Drain Current 100 0.4 OPERATION IN THIS AREA LIMITED BY R DS(on) ID = -2.2A TJ = 25C -ID, Drain-to-Source Current (A) () RDS (on), Drain-to -Source On Resistance 1.5 -ID , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 0.3 0.2 0.1 0.0 2.0 4.0 6.0 8.0 10.0 -VGS, Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 1.0 100sec 10 1msec Tc = 25C Tj = 150C Single Pulse 10msec 1 1 10 100 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7324D1 Power Mosfet Characteristics 600 -VGS, Gate-to-Source Voltage (V) 500 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 400 300 Ciss 200 Coss 100 Crss ID= -2.2A VDS= -16V VDS= -10V 10 8 6 4 2 0 0 1 10 0 100 2 4 6 8 10 12 QG Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7324D1 Schottky Diode Characteristics 100 Instantaneous Forward Current - IF (A) Reverse Current - IR (mA) 10 10 J 1 0.01 0.001 0.0001 1 0.1 ) 0 4 8 12 16 20 R TJ = 150C TJ = 125C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage TJ = 25C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward VFM (V) ForwardVoltage Votage Drop - V FM (V) Fig. 12 -Typical Forward Voltage Drop Characteristics Fig.14 - Typical Junction capacitance Vs.Reverse Voltage 6 www.irf.com IRF7324D1 SO-8 (Fetky) Package Outline Dimensions are shown in millimeters (inches) D DIM B 5 A 8 7 6 5 H E 0.25 [.010] 1 6X 2 3 A MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 .1574 3.80 4.00 E .1497 e .050 BASIC e1 4 e e1 C 1.27 BASIC .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMET ERS MAX A 6 INCHES MIN A1 8X L 8X c 7 C A B FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: THIS IS AN IRF7807D1 (FETKY) INTERNATIONAL RECTIFIER LOGO www.irf.com XXXX 807D1 DATE CODE (YWW) P = DISGNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER 7 IRF7324D1 SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) ISD -2.2A, di/dt -96A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, steady-state R is measured at TJ of approximately 90C. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 8 www.irf.com