Cascadable Broadband GaAs MMIC Amplifier NBB-302 DC-12 GHz 6000036 Rev. A Features * * * 1 * * Reliable Low-Cost HBT Design 12 dB Gain, +13.7 dBm P1dB @ 2 GHz High P1dB of +14 dBm at 6.0 GHz and +11.0 dBm at 14.0 GHz Single Power Supply Operation 50 Input/Output Matched for High-Frequency Utilization. Description RF Nitro's NBB-302 Cascadable Broadband GaInP/GaAs MMIC amplifier is a low-cost highperformance solution for your general-purpose RF and microwave amplification needs. This 50-ohm gain block is based upon a reliable HBT (Heterojunction Bipolar Transistor) proprietary MMIC design, providing unsurpassed performance for small-signal applications. in 1,000 or 3,000 piece-per-reel quantities. Connectorized evaluation board designs are also available for characterization purposes. Applications * * * Narrow & broadband commercial & military radio designs. Linear & saturated amplifier applications. Gain stage or driver amplifiers utilized in microwave radio and optical designs such as PTP, PMP, LMDS, UNII, VSAT, WLAN, cellular, and DWDM systems. Package Ceramic MPGA (Multi-Pin Grid Array) The NBB-302 is packaged in a low-cost, hermetic, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. The NBB-302 incorporates external dc decoupling capacitors, which limit the low-frequency response. Designed with an external bias resistor, the NBB-302 provides flexibility and stability to your requirement. The NBB-302 is available in either packaged or chip (NBB-300-D) form, where its gold metalization is ideal for hybrid circuit designs. Packaged parts are available Electrical Specifications Vd= +3.9V, Icc = 50 mA, Zo = 50 , TA = +25 C. Parameter Small Signal Power Gain, S21 Gain Flatness, GF Input and Output VSWR Bandwidth, BW Output Power @ 1-dB Compression, P1dB Noise Figure, NF 3rd Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, Vd Test Conditions f=0.1 to 1.0 GHz f=1.0 to 4.0 GHz f=4.0 to 6.0 GHz f=6.0 to 12.0 GHz f=12.0 to 14.0 GHz f=0.1 to 8.0 GHz f=0.1 to 4.0 GHz f=4.0 to 12.0 GHz f=12.0 to 15.0 GHz BW3 (3dB) f=2.0 GHz f=6.0 GHz f=14.0 GHz f=3.0 GHz f=2.0 GHz f=0.1 to 12.0 GHz . 1-16 T 10420-F Harris Oaks Blvd., Charlotte, NC 28269 GHz dBm dBm dBm dB dBm dB V Min. 12.0 11.0 9.0 3.6 dB / C Gain Temperature Coefficient GT Units dB dB dB dB dB dB Phone: (704) 596-9060 Fax: (704) 596-0950 Typ. 13.0 13.0 12.5 10.5 9.5 (avg.) +0.6 2.4 2.0 2.8 12.5 13.7 14.0 11.0 5.5 +27.1 -15 3.9 Max. 4.2 -0.0015 Web: www.rfnitro.com Cascadable Broadband GaAs MMIC Amplifier 6000036 Rev. A Absolute Maximum Ratings Typical Bias Configuration Exceeding any one or a combination of these limits may cause permanent damage. Parameter Absolute Maximum RF Input Power +20 dBm Power Dissipation 300 mW Device Current 70 mA Channel Temperature 200o C Operating -45 C to +85 C Temperature Storage Temperature -65 C to +150 C Application notes related to biasing circuit, device footprint, and thermal considerations are available upon request. Vcc Rcc 4 1 In C block 1 L choke (optional) Out C block 3 2 Vd=3.9V Ordering Information Part Number NBB-302 NBB-302T1 NBB-302T3 NBB-302-D NBB-302-E Package Low-Cost 4 Lead Ceramic Pkg. Tape & Reel, 1000 Pieces Tape & Reel, 3000 Pieces NBB-302 Chip Form NBB-302 Evaluation Board Recommended Bias Resistor Values Supply Voltage, Vcc 5 8 10 12 (V) Bias Resistor, Rcc () 22 41 122 162 15 20 222 322 Typical S-Parameter Data Vd= +3.9V, Icc = 50 mA, Zo = 50 , TA = +25 C. Freq. GHz S11 (dB) S11 Mag S11 Ang S21 (dB) S21 Mag S21 Ang S12 (dB) S12 Mag S12 Ang S22 (dB) S22 Mag S22 Ang .10 -7.6 0.41 -170.5 13.1 4.54 179.4 -15.6 .25 -8.0 0.40 172.5 13.3 4.70 177.3 -18.2 0.16 1.1 -7.0 0.42 -173.0 0.12 -2.9 -9.0 0.35 .50 -8.0 0.39 164.3 13.4 4.70 173.5 173.5 -18.4 0.12 -1.5 -9.2 0.34 165.7 1.0 -8.0 0.39 142.5 13.4 4.69 2.0 -8.2 0.38 95.2 13.4 4.63 164.6 -18.1 0.12 -3.1 -9.2 0.34 145.5 144.6 -18.2 0.12 -8.6 -9.2 0.34 4.0 -8.9 0.35 15.0 12.8 102.1 4.39 110.4 -17.7 0.13 -17.8 -9.4 0.33 26.0 6.0 -9.6 0.32 -67.1 8.0 -10.5 0.29 -135.1 12.8 4.37 73.4 -16.6 0.14 -29.7 -8.9 0.35 -60.7 11.7 3.82 33.6 -16.2 0.15 -49.3 -8.5 0.37 -141.9 10.0 -10.4 0.30 163.7 10.6 3.39 5.2 -16.0 0.15 -62.9 -7.9 0.40 138.4 12.0 -9.3 14.0 -7.3 0.33 104.3 10.6 3.38 -26.8 -15.6 0.16 -77.1 -7.3 0.42 65.5 0.42 40.5 9.0 2.84 -65.1 -15.9 0.15 -98.4 -6.9 0.44 -5.8 10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 1-17 Cascadable Broadband GaAs MMIC Amplifier 6000036 Rev. A Typical Performance Measurements TA = +25 C, VD = +3.9 V S11 vs Icc (mA) 0 70mA S21 (dB) 1 S11 (dB) -5 S21 vs Icc (mA) 15 -10 30mA 70mA 30mA 10 5 -15 0 -20 0 5 10 15 0 20 5 0 -5 -5 S22 (dB) S12 (dB) S12 vs Icc (mA) 0 -10 30mA -15 0 5 15 20 S22 vs Icc (mA) 70mA -10 30mA -15 70mA -20 10 Frequency (GHz) Frequency (GHz) -20 10 15 20 0 5 10 15 20 Frequency (GHz) Frequency (GHz) Device Voltage vs Amplifier Current Device Voltage, Vd (V) 4 3.95 3.9 3.85 3.8 3.75 30 35 40 45 50 55 60 65 70 Amplifier Current, ICC (mA) 1-18 10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com Cascadable Broadband GaAs MMIC Amplifier 6000036 Rev. A Third Order Intercept versus Frequency P1dB versus Tem perature & Frequency 30 16 14 ICC = 50 mA 28 10 Output IP3 (dBm) P1dB (dBm ) 12 8 Ta=-40C Ta=+25C Ta=+85C 6 4 26 24 22 2 1 0 2 4 6 8 10 12 14 20 16 Frequency (GH z) 2 4 6 8 10 12 14 16 Frequenc y (G H z) Pout/Gain vs Pin @ 14GHz 18 16 14 12 10 8 6 4 2 0 14 Pout(dBm), Gain(dB) Pout(dBm), Gain(dB) Pout/Gain vs Pin @ 6GHz 12 10 8 6 4 2 0 -7 -5 -3 -1 1 3 5 7 -8 10420-F Harris Oaks Blvd., Charlotte, NC 28269 -6 -4 -2 0 2 4 6 Pin (dBm) Pin (dBm) Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 1-19 Cascadable Broadband GaAs MMIC Amplifier 6000036 Rev. A Package Drawing Ceramic MPGA All Dimensions in Millimeters 2.94 min 3.28 max 1.00 min 1.50 max Pin 1 Indicator 0.50 nom 0.025 min 0.125 max 1 0.50 nom Pin 1 Indicator Ground RF OUT XX RF IN Ground Lid ID 1.70 min 1.91 max 2.39 min 2.59 max 0.98 min 1.02 max 0.37 min 0.63 max 0.38 nom Notes: 1. Solder pads are coplanar to within +/- 0.025 mm 2. Lid will be centered relative to frontside metalization with a tolerance of +/-0.13 mm 3. Mark to include two characters and dot to reference pin 1 3 x 3 CERAMIC MPGA - Bowtie Design NBB-300-D (Die) Chip Dimensions: 0.017" X 0.017" X 0.004" Back of chip is ground. UNITS: INCHES [mm] INPUT OUTPUT 0.0170.001 [0.440.03] GND VIA 0.0170.001 [0.440.03] 0.0040.001 [0.100.03] + 1-20 10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com Cascadable Broadband GaAs MMIC Amplifier 6000036 Rev. A Application Notes Die Attach: The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Wire Bonding: Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. 1 Assembly Procedure: Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metalization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metalized area of the substrate. A 150C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik. Bonding Temperature (Wedge or Ball): It is recommended that the heater block temperature be set 160C +/- 10C. ESD Sensitive Device RF Nitro Communications has furnished the information contained within this document to the best of our ability and accuracy. However, we reserve the right to make changes to our products, and supporting data, at our sole discretion without notice. 10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 1-21