10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com1-16
Features
• Reliable Low-Cost HBT Design
• 12 dB Gain, +13.7 dBm P1dB @ 2 GHz
• High P1dB of +14 dBm at 6.0 GHz and
+11.0 dBm at 14.0 GHz
• Single Power Supply Operation
• 50 Ω Input/Output Matched for High-Frequency
Utilization.
Description
RF Nitro’s NBB-302 Cascadable Broadband
GaInP/GaAs MMIC amplifier is a low-cost high-
performance solution for your general-purpose RF and
microwave amplification needs. This 50-ohm gain block
is based upon a reliable HBT (Heterojunction Bipolar
Transistor) proprietary MMIC design, providing
unsurpassed performance for small-signal applications.
The NBB-302 is packaged in a low-cost, hermetic,
surface-mount ceramic package, providing ease of
assembly for high-volume tape-and-reel requirements.
The NBB-302 incorporates external dc decoupling
capacitors, which limit the low-frequency response.
Designed with an external bias resistor, the NBB-302
provides flexibility and stability to your requirement.
The NBB-302 is available in either packaged or chip
(NBB-300-D) form, where its gold metalization is ideal
for hybrid circuit designs. Packaged parts are available
in 1,000 or 3,000 piece-per-reel quantities. Connector-
ized evaluation board designs are also available for
characterization purposes.
Applications
• Narrow & broadband commercial & military
radio designs.
• Linear & saturated amplifier applications.
• Gain stage or driver amplifiers utilized in microwave
radio and optical designs such as PTP, PMP,
LMDS, UNII, VSAT, WLAN, cellular, and DWDM
systems.
Package Ceramic MPGA (Multi-Pin Grid Array)
Electrical Specifications Vd= +3.9V, Icc = 50 mA, Zo = 50Ω
ΩΩ
Ω, TA = +25 °
°°
°C.
Parameter Test Conditions Units Min. Typ. Max.
Small Signal Power Gain, S21
f=0.1 to 1.0 GHz
f=1.0 to 4.0 GHz
f=4.0 to 6.0 GHz
f=6.0 to 12.0 GHz
f=12.0 to 14.0 GHz
dB
dB
dB
dB
dB
12.0
11.0
9.0
13.0
13.0
12.5
10.5
9.5 (avg.)
Gain Flatness, GF f=0.1 to 8.0 GHz dB +0.6
Input and Output VSWR
f=0.1 to 4.0 GHz
f=4.0 to 12.0 GHz
f=12.0 to 15.0 GHz
2.4
2.0
2.8
Bandwidth, BW BW3 (3dB) GHz 12.5
Output Power @ 1-dB
Compression, P1dB
f=2.0 GHz
f=6.0 GHz
f=14.0 GHz
dBm
dBm
dBm
13.7
14.0
11.0
Noise Figure, NF f=3.0 GHz dB 5.5
3rd Order Intercept, IP3 f=2.0 GHz dBm +27.1
Reverse Isolation, S12 f=0.1 to 12.0 GHz dB -15
Device Voltage, Vd . V 3.6 3.9 4.2
Gain Temperature Coefficient
T
GT∂
∂ CdB °/ -0.0015
Cascadable Broadband GaAs MMIC Amplifier
DC-12 GHz NBB-302
6000036 Rev. A
1
Cascadable Broadband GaAs MMIC Amplifier
6000036 Rev. A
10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 1-17
Absolute Maximum Ratings
Exceeding any one or a combination of these limits may
cause permanent damage.
Parameter Absolute Maximum
RF Input Power +20 dBm
Power Dissipation 300 mW
Device Current 70 mA
Channel Temperature 200o C
Operating
Temperature -45 °C to +85 °C
Storage Temperature -65 °C to +150 °C
Ordering Information
Part Number Package
NBB-302
NBB-302T1
NBB-302T3
NBB-302-D
NBB-302-E
Low-Cost 4 Lead Ceramic Pkg.
Tape & Reel, 1000 Pieces
Tape & Reel, 3000 Pieces
NBB-302 Chip Form
NBB-302 Evaluation Board
Typical Bias Configuration
Application notes related to biasing circuit, device footprint,
and thermal considerations are available upon request.
2C block
C block 3
In 1
4
Vcc
Out
L choke (optional)
Rcc
Vd=3.9V
Typical S-Parameter Data Vd= +3.9V, Icc = 50 mA, Zo = 50Ω
ΩΩ
Ω, TA = +25 °
°°
°C.
Recommended Bias Resistor Values
Supply
Voltage, Vcc
(V)
5 8 10 12 15 20
Bias Resistor,
Rcc (Ω) 22 41 122 162 222 322
Freq.
GHz
S11
(dB)
S11
Mag
S11
Ang
S21
(dB)
S21
Mag
S21
Ang
S12
(dB)
S12
Mag
S12
Ang
S22
(dB)
S22
Mag
S22
Ang
.10 -7.6 0.41 -170.5 13.1 4.54 179.4 -15.6 0.16 1.1 -7.0 0.42 -173.0
.25 -8.0 0.40 172.5 13.3 4.70 177.3 -18.2 0.12 -2.9 -9.0 0.35 173.5
.50 -8.0 0.39 164.3 13.4 4.70 173.5 -18.4 0.12 -1.5 -9.2 0.34 165.7
1.0 -8.0 0.39 142.5 13.4 4.69 164.6 -18.1 0.12 -3.1 -9.2 0.34 145.5
2.0 -8.2 0.38 95.2 13.4 4.63 144.6 -18.2 0.12 -8.6 -9.2 0.34 102.1
4.0 -8.9 0.35 15.0 12.8 4.39 110.4 -17.7 0.13 -17.8 -9.4 0.33 26.0
6.0 -9.6 0.32 -67.1 12.8 4.37 73.4 -16.6 0.14 -29.7 -8.9 0.35 -60.7
8.0 -10.5 0.29 -135.1 11.7 3.82 33.6 -16.2 0.15 -49.3 -8.5 0.37 -141.9
10.0 -10.4 0.30 163.7 10.6 3.39 5.2 -16.0 0.15 -62.9 -7.9 0.40 138.4
12.0 -9.3 0.33 104.3 10.6 3.38 -26.8 -15.6 0.16 -77.1 -7.3 0.42 65.5
14.0 -7.3 0.42 40.5 9.0 2.84 -65.1 -15.9 0.15 -98.4 -6.9 0.44 -5.8
1
Cascadable Broadband GaAs MMIC Amplifier
6000036 Rev. A
10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com1-18
-20
-15
-10
-5
0
0 5 10 15 20
S11 vs Icc (mA)
S11 (dB)
Frequency (GHz)
70mA
30mA
0
5
10
15
0 5 10 15 20
S21 vs Icc (mA)
S21 (dB)
Frequency (GHz)
70mA
30mA
-20
-15
-10
-5
0
0 5 10 15 20
S12 vs Icc (mA)
S12 (dB)
Frequency (GHz)
70mA
30mA
-20
-15
-10
-5
0
0 5 10 15 20
S22 vs Icc (mA)
S22 (dB)
Frequency (GHz)
70mA
30mA
Typical Performance Measurements TA = +25° C, VD = +3.9 V
3.75
3.8
3.85
3.9
3.95
4
30 35 40 45 50 55 60 65 70
Device Voltage vs Amplifier Current
Device Voltage, Vd (V)
Amplifier Current, ICC (mA)
1
Cascadable Broadband GaAs MMIC Amplifier
6000036 Rev. A
10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 1-19
0
2
4
6
8
10
12
14
16
2 4 6 8 10 12 14 16
P1dB versus Temperature & Frequency
Ta=-40C
Ta=+25C
Ta=+85C
P1dB (dBm)
Frequency (GHz)
Pout/Gain vs Pin @ 6GHz
0
2
4
6
8
10
12
14
16
18
-7 -5 -3 -1 1 3 5 7
Pin (dBm)
Pout(dBm), Gain(dB)
Pout/Gain vs Pin @ 14GHz
0
2
4
6
8
10
12
14
-8-6-4-20246
Pin (dBm)
Pout(dBm), Gain(dB)
20
22
24
26
28
30
2 4 6 8 10 12 14 16
Third Order Interce
p
t versus Fre
q
uenc
y
Output IP3 (dBm)
Frequency (GHz)
ICC = 50 mA
1
Cascadable Broadband GaAs MMIC Amplifier
6000036 Rev. A
10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com1-20
Package Drawing Ceramic MPGA
XX
3 x 3 CERAMIC MPGA - Bowtie Design
2. Lid will be centered relative to frontside metalization with a tolerance of +/-0.13 mm
3. Mark to include two characters and dot to reference pin 1
Notes: 1. Solder pads are coplanar to within +/- 0.025 mm
All Dimensions in Millimeters
0.025 min
1.00 min
Pin 1 Indicator
RF IN
0.37 min
0.98 min
0.50 nom
RF OUT
Ground
Pin 1
Indicator
0.125 max 0.50 nom
Ground
1.02 max
0.63 max
1.50 max
Lid ID
1.70 min
2.39 min
2.59 max
1.91 max
3.28 max
2.94 min
0.38 nom
NBB-300-D (Die)
Chip Dimensions: 0.017” X 0.017” X 0.004”
Back of chip is ground.
GND
VIA
INPUT
OUTPUT
UNITS: INCHES
[mm]
0.017±0.001
[0.44±0.03]
0.017±0.001
[0.44±0.03]
0.004±0.001
[0.10±0.03]
+
1
Cascadable Broadband GaAs MMIC Amplifier
6000036 Rev. A
10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 1-21
Application Notes
Die Attach:
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically
connects the ground to the trace on which the chip is mounted, and establishes the thermal path by
which heat can leave the chip.
Wire Bonding:
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods
are acceptable practices for wire bonding.
Assembly Procedure:
Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metalization are
gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to
form a joint between the backside gold of the chip and the metalized area of the substrate. A 150°C cure
for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik.
Bonding Temperature (Wedge or Ball):
It is recommended that the heater block temperature be set 160°C +/- 10°C.
ESD Sensitive Device
RF Nitro Communications has furnished the information contained within this document to the best of our ability and accuracy.
However, we reserve the right to make changes to our products, and supporting data, at our sole discretion without notice.
1
