TISP4360L3AJR-S - Bourns, Inc.

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xxxL3AJ Overvoltage Protector Series

TISP4070L3AJ THRU TISP4395L3AJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Device Symbol

SMA (DO-214AC) Package

25% Smaller Placement Area than SMB

Ion-Implanted Breakdown Region

Precise and Stable Voltage

SMAJ Package (Top View)

Rated for International Surge Wave Shapes

How To Order

Device V

DRM

(BO)

‘4070 58 70

‘4080 65 80

‘4090 70 90

‘4125 100 125

‘4145 120 145

‘4165 135 165

‘4180 145 180

‘4220 160 220

‘4240 180 240

‘4260 200 260

‘4290 230 290

‘4320 240 320

‘4350 275 350

‘4360 290 360

‘4395 320 395

MDXXCCE

12R (B) T (A)

SD4XAA

Terminals T and R correspond to the

alternative line designators of A and B

Wave Shape Standard ITSP

2/10 µs GR-1089-CORE 125

8/20 µs IEC 61000-4-5 100

10/160 µs FCC Part 68 65

10/700 µs ITU-T K.20/21/45 50

10/560 µs FCC Part 68 40

10/1000 µs GR-1089-CORE 30

............................................ UL Recognized Components

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Device Package Carrier Order As

TISP4xxxL3AJ SMA (DO-214AC) Embossed Tape Reel Pack TISP4xxxL3AJR-S

Insert xxx value correspondin

to protection volta

es of 070, 080, 090, etc.

*RoHS COMPLIANT

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning

flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used

for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of

devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until

the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the

current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as

the diverted current subsides.

The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are

guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ

(JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage

and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100

A 10/1000 TISP4xxxH3BJ series in SMB are available.

TISP4xxxL3AJ Overvoltage Protector Series

Description

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

Rating Symbol Value Unit

Repetitive peak off-state voltage, (see Note 1)

‘4070

‘4080

‘4125

‘4145

‘4165

‘4180

‘4220

‘4240

‘4260

‘4290

‘4350

‘4360

‘4395

VDRM

± 58

± 65

‘4090 ± 70

±100

±120

±135

±145

±160

±180

±200

±230

‘4320 ±240

±275

±290

±320

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

ITSP A

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 125

8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 100

10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 65

5/310 µs (ITU-T K.20/21/45, K.44 10/700 µs voltage wave shape) 50

5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 50

10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 40

10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 30

Non-repetitive peak on-state current (see Notes 2, 3 and 4)

ITSM

1.6

20 ms (50 Hz) full sine wave

1 s (50 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.

Junction temperature TJ-40 to +150 °C

Storage temperature range T

stg -65 to +150 °C

NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/°C.

2. Initially, the TISP4xxxL3 must be in thermal equilibrium with T

J=25°C.

3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions.

4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xxxL3AJ Overvoltage Protector Series

Recommended Operating Conditions

Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)

Component Min Typ Max Unit

series resistor for FCC Part 68, 10/560 type A surge survival 12 Ω

series resistor for FCC Part 68, 9/720 type B surge survival 0 Ω

series resistor for GR-1089-CORE first-level and second-level surge survival 23 Ω

series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival 0 Ω

series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector 7 Ω

Parameter Test Conditions Min Typ Max Unit

DRM

Repetitive peak off-

state current V

= V

DRM

= 25 °C

= 85 °C

±5

±10 µA

(BO)

Breakover voltage dv/dt = ±250 V/ms, R

SOURCE

= 300 Ω

‘4070

‘4080

‘4090

‘4125

‘4145

‘4165

‘4180

‘4220

‘4240

‘4260

‘4290

‘4320

‘4350

‘4360

‘4395

±70

±80

±90

±125

±145

±165

±180

±220

±240

±260

±290

±320

±350

±360

±395

(BO)

Breakover current dv/dt = ±250 V/ms, R

SOURCE

= 300 Ω±0.8 A

Holding current I

=±5 A, di/dt = +/-30 mA/ms ±0.15 ±0.60 A

dv/dt Critical rate of rise of

off-state voltage Linear voltage ramp, Maximum ramp value < 0.85V

DRM

±5 kV/µs

Off-state current

‘4070, V

=±52 V

‘4080, V

=±59 V

‘4090, V

=±63 V

‘4125, V

=±90 V

‘4145, V

=±108 V

‘4165, V

=±122 V

‘4180, V

=±131 V

‘4220, V

=±144 V

‘4240, V

=±162 V

‘4260, V

=±180 V

‘4290, V

=±207 V

‘4320, V

=±216 V

‘4350, V

=±248 V

‘4360, V

=±261 V

‘4395, V

=±288 V

±2µA

Off-state current

=±50 VV±10 µA

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Thermal Characteristics

TISP4xxxL3AJ Overvoltage Protector Series

Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)

Coff Off-state capacitance

f=1MHz, V

d=1V rms, V

D=±1V

f=1MHz, V

d=1V rms, V

D=±50 V

4070 thru ‘4090

‘4125 thru ‘4220

‘4240 thru ‘4395

‘4070 thru ‘4090

‘4125 thru ‘4220

‘4240 thru ‘4395

Parameter Test Conditions Min Typ Max Unit

RθJA Junction to free air thermal resistance

EIA/JESD51-3 PCB, IT = ITSM(1000),

TA = 25 °C, (see Note 75) 115

°C/W

265 mm x 210 mm populated line card,

4-layer PCB, IT = ITSM(1000), TA = 25 °C52

NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xxxL3AJ Overvoltage Protector Series

Parameter Measurement Information

Figure 1. Voltage-Current Characteristic for T and R Terminals

All Measurements are Referenced to the R Terminal

-v VDRM

IDRM

ITSM

ITSP

V(BO)

I(BO)

Quadrant I

Switching

Characteristic

V(BO)

I(BO)

ITSM

ITSP

-i

Quadrant III

Switching

Characteristic PMXXAAB

VDRM

IDRM

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xxxL3AJ Overvoltage Protector Series

Typical Characteristics

Figure 2.

OFF-STATE CURRENT

JUNCTION TEMPERATURE

J - Junction Temperature - °C

-25 0 25 50 75 100 125 150

|ID| - Off-State Current - µA

0·001

0·01

0·1

10 TC4LAG

VD = ±50 V

Figure 3.

J - Junction Temperature - °C

NORMALIZED BREAKOVER VOLTAGE

JUNCTION TEMPERATURE

-25 0 25 50 75 100 125 150

Normalized Breakover Voltage

0.90

0.95

1.00

1.05

1.10

1.15 TC4LAF

Figure 4.

On-State Current - A

ON-STATE CURRENT

ON-STATE VOLTAGE

VT - On-State Voltage - V

0.7 1.5 2 3 4 5 7 101

IT -

0.5

0.7

1.5

TA = 25 °C

tW = 100 µs

TC4MAM

'4070

THRU

'4090

'4125

THRU

'4220

'4240

THRU

'4395

Figure 5.

Junction Temperature - °C

TJ -

-25 0 25 50 75 100 125 150

Normalized Holding Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC4LAD

NORMALIZED HOLDING CURRENT

JUNCTION TEMPERATURE

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xxxL3AJ Overvoltage Protector Series

Typical Characteristics

Figure 6.

NORMALIZED CAPACITANCE

OFF-STATE VOLTAGE

VD - Off-state Voltage - V

0.5 1 2 3 5 10 20 30 50 100150

Capacitance Normalized to VD = 0

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1TC4LABC

'4070 THRU '4090

'4240 THRU '4395

'4125 THRU '4220

TJ = 25 °C

Vd = 1 Vrms

Figure 7.

DIFFERENTIAL OFF-STATE CAPACITANCE

RATED REPETITIVE PEAK OFF-STATE VOLTAGE

VDRM - Repetitive Peak Off-State Voltage - V

50 60 70 80 90 150 200 250 300 350100

∆C - Differential Off-State Capacitance - pF

∆C = Coff(-2 V) - Coff(-50 V)

TCLAEB

TYPICAL CAPACITANCE ASYMMETRY

OFF-STATE VOLTAGE

Figure 6.

Off-state Voltage - V

VD —

23 11 4 5 7 20 30 40 500

|Coff(+VD)- Coff(-VD) | — Capacitance Asymmetry — pF

Vd = 1 V rms, 1 MHz

Vd = 10 mV rms, 1 MHz

TC4LBB

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xxxL3AJ Overvoltage Protector Series

Rating and Thermal Information

Figure 9.

NON-REPETITIVE PEAK ON-STATE CURRENT

CURRENT DURATION

t - Current Duration - s

0.01 0.1 1 10 100

ITSM(t) - Non-Repetitive Peak On-State Current - A

1.5

TI4LAI

VGEN = 600 Vrms, 50/60 Hz

RGEN = 1.4*VGEN/ITSM(t)

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

A = 25 °C

Figure 10.

VDRM DERATING FACTOR

MINIMUM AMBIENT TEMPERATURE

TAMIN - Minimum Ambient Temperature - °C

-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20

Derating Factor

0.93

0.94

0.95

0.96

0.97

0.98

0.99

1.00 TI4LADB

'4070 THRU '4090

'4125 THRU '4220

'4240 THRU '4395

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

MECHANICAL DATA

TISP4xxxL3AJ Overvoltage Protector Series

Recommended Printed Wiring Land Pattern Dimensions

Device Symbolization Code

Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.

Carrier Information

For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.

SMA Land Pattern

MDXX BIC

2.34

(.092)

1.90

(.075)

2.16

(.085)

DIMENSIONS ARE: MILLIMETERS

(INCHES)

Device Symbolization

Code

TISP4070L3 4070L

TISP4080L3 4080L

TISP4090L3 4090L

TISP4125L3 4125L

TISP4145L3 4145L

TISP4165L3 4165L

TISP4180L3 4180L

TISP4220L3 4220L

TISP4240L3 4240L

TISP4260L3 4260L

TISP4290L3 4290L

TISP4320L3 4320L

TISP4350L3 4350L

TISP4360L3 4360L

TISP4395L3 4395L

Carrier Standard Quantity

Embossed Tape Reel Pack 5,000

“TISP” is a trademark of Bourns, Ltd., a Bourns Company and Registered in U.S. Patent and Trademark Office.

“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.