TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors * Complement to TIP145F/146F/147F * High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) * Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor 2.Collector Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-Emitter Voltage : TIP140F : TIP141F : TIP142F : TIP140F : TIP141F : TIP142F Value 60 80 100 Units V V V 60 80 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 10 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 0.5 A PC Collector Dissipation (TC=25C) 60 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C 3.Emitter Equivalent Circuit C B R1 R2 R1 8k R 2 0.12 k E Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICEO ICBO Parameter Collector-Emitter Sustaining Voltage : TIP140F : TIP141F : TIP142F Test Condition IC = 30mA, IB = 0 Min. Typ. Max. 60 80 100 Units V V V Collector Cut-off Current : TIP140F : TIP141F : TIP142F VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 mA mA mA : TIP140F : TIP141F : TIP142F VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 1 1 1 mA mA mA 2 mA Collector Cut-off Current IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE DC Current Gain VCE = 4V, IC = 5A VCE = 4V, IC = 10A VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA 2 3 V V V 1000 500 VBE(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 10A 3 tD Delay Time tR Rise Time tSTG Storage Time VCC = 30V, IC = 5A IB 1= 20mA, IB2 = -20mA RL = 6 tF Fall Time (c)2001 Fairchild Semiconductor Corporation V 0.15 s 0.55 s 2.5 s 2.5 s Rev. A1, June 2001 TIP140F/141F/142F Typical Characteristics 10 IB = 2000uA IB = 9 1200 IB = 1600uA 7 IB = 1400uA 0u 100 IB = A IB = 800uA V CE = 4V IB = 600uA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 1800uA 8 100k uA IB = 400uA 6 5 4 IB = 200uA 3 2 10k 1k 100 1 10 0.1 0 0 1 2 3 4 5 1 Figure 1. Static Characteristics Figure 2. DC current Gain 10 1000 IC =500IB f=0.1MHz Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 IC [A], COLLECTOR CURRENT V CE[V], COLLECTOR-EMITTER VOLTAGE V BE(sat) 1 V CE(sat) 0.1 0.01 0.1 100 10 1 10 100 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 PC[W], POWER DISSIPATION 100 10 D C IC[A], COLLECTOR CURRENT 10 1 TIP140 TIP141 TIP142 80 60 40 20 0 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area (c)2001 Fairchild Semiconductor Corporation 1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 TIP140F/141F/142F Package Demensions TO-3PF 4.50 0.20 5.50 0.20 15.50 0.20 2.00 0.20 22.00 0.20 23.00 0.20 10 1.50 0.20 16.50 0.20 2.50 0.20 14.50 0.20 0.85 0.03 2.00 0.20 16.50 0.20 2.00 0.20 4.00 0.20 3.30 0.20 +0.20 0.75 -0.10 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] +0.20 0.90 -0.10 5.50 0.20 26.50 0.20 10.00 0.20 (1.50) 2.00 0.20 2.00 0.20 14.80 0.20 3.00 0.20 o3.60 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H3