FCPF190N65S3R0L - ON SEMICONDUCTOR

September, 2019 − Rev. 7

1Publication Order Number:

FCPF190N65S3R0L/D

MOSFET – Power, N-Channel,

SUPERFET III, Easy Drive

650 V, 17 A, 190 mW

FCPF190N65S3R0L

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET

Easy drive series helps manage EMI issues and allows for easier

design implementation.

Features

•700 V @ TJ = 150°C

•Typ. RDS(on) = 159 mW

•Ultra Low Gate Charge (Typ. Qg = 33 nC)

•Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)

•100% Avalanche Tested

•This Device is Pb−Free and is RoHS Compliant

Applications

•Computing / Display Power Supplies

•Telecom / Server Power Supplies

•Industrial Power Supplies

•Lighting / Charger / Adapter

TO−220

CASE 340BF

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

www.onsemi.com

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FCPF190N65S3R0 = Specific Device Code

$Y&Z&3&K

FCPF190

N65S3R0

GDS

VDSS ID MAXRDS(on) MAX

650 V 17 A190 mΩ @ 10 V

FCPF190N65S3R0L

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 650 V

VGSS Gate to Source Voltage DC ±30 V

AC (f > 1 Hz) ±30 V

IDDrain Current Continuous (TC = 25°C) 17* A

Continuous (TC = 100°C) 11*

IDM Drain Current Pulsed (Note 1) 42.5* A

EAS Single Pulsed Avalanche Energy (Note 2) 76 mJ

IAS Avalanche Current (Note 2) 2.5 A

EAR Repetitive Avalanche Energy (Note 1) 1.44 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PDPower Dissipation TC = 25°C 33 W

Derate Above 25°C 1.15 W/°C

TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C

TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

*Drain current limited by maximum junction temperature.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. IAS = 2.5 A, RG = 25 W, starting TJ = 25°C.

3. ISD ≤ 8.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

RθJC Thermal Resistance, Junction to Case, Max. 3.76 _C/W

RθJA Thermal Resistance, Junction to Ambient, Max. 62.5

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FCPF190N65S3R0L FCPF190N65S3R0 TO−220F Tube N/A N/A 50 Units

FCPF190N65S3R0L

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 650 V

VGS = 0 V, ID = 1 mA, TJ = 150°C 700 V

DBVDSS / DTJBreakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25oC 0.6 V/°C

IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V 1mA

VDS = 520 V, TC = 125oC 0.89

IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V ±100 nA

ON CHARACTERISTICS

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.39 mA 2.5 4.5 V

RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8.5 A 159 190 mW

gFS Forward Transconductance VDS = 20 V, ID = 8.5 A 10 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 400 V, VGS = 0 V,

f = 1 MHz

1350 pF

Coss Output Capacitance 30 pF

Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 300 pF

Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 43 pF

Qg(tot) Total Gate Charge at 10V VDS = 400 V, ID = 8.5 A,

VGS = 10 V

(Note 4)

33 nC

Qgs Gate to Source Gate Charge 7.9 nC

Qgd Gate to Drain “Miller” Charge 14 nC

ESR Equivalent Series Resistance f = 1 MHz 0.5 W

SWITCHING CHARACTERISTICS

td(on) Turn−On Delay Time VDD = 400 V, ID = 8.5 A,

VGS = 10 V, Rg = 4.7 Ω

(Note 4)

17 ns

trTurn−On Rise Time 16 ns

td(off) Turn−Off Delay Time 42 ns

tfTurn−Off Fall Time 6 ns

SOURCE−DRAIN DIODE CHARACTERISTICS

ISMaximum Continuous Source to Drain Diode Forward Current 17 A

ISM Maximum Pulsed Source to Drain Diode Forward Current 42.5 A

VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 8.5 A 1.2 V

trr Reverse Recovery Time VDD = 400 V, ISD = 8.5 A,

dIF/dt = 100 A/ms

313 ns

Qrr Reverse Recovery Charge 4.9 mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

FCPF190N65S3R0L

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On−Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

Figure 5. Capacitance Characteristics

ID Drain Current [A]

VDS, Drain−Source Voltage [V]

VSD, Body Diode Forward Voltage [V]

IS, Reverse Drain Current [A]

Figure 6. Gate Charge Characteristics

RDS(ON),

Drain−Source On−Resistance [W]

ID, Drain Current [A]

Capacitance [pF]

Qg, Total Gate Charge [V]

VGS, Gate−Source Voltage [V] ID Drain Current [A]

VGS, Gate−Source Voltage [V]

0.1

VGS = 10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

0.0

0.1

0.2

0.3

0.4

0.001

0.01

0.1

100

0.1

100

1000

10000

100000

Coss

Ciss

Crss

Notes:

1. 250 ms Pulse Test

2. TC = 25°C

Notes:

1. VDS = 20 V

2. 250 ms Pulse Test

25°C

−55°C

150°C

Note: TC = 25°C

VGS = 10 V

VGS = 20 V

Notes:

1. VGS = 0 V

2. 250 ms Pulse Test

25°C

−55°C

150°C

Notes:

1. VGS = 0 V

2. f = 1 MHz

ciss = cgs + cgd (cds = shorted)

coss = cds + cgd

crss = cgd

Note: ID = 8.5 A

VDS = 130 V

VDS = 400 V

0.1 1 10 3 4 5 6 7 8 9

0 10 20 30 40 0.0 0.5 1.0 1.5

0.1 1 10 100 1000 0 5 10 15 20 25 30 35

FCPF190N65S3R0L

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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On−Resistance Variation vs.

Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs.

Case Temperature

Figure 11. Eoss vs. Drain to Source Voltage

BVDSS, [Normalized]

Drain−Source Breakdown Voltage

TJ, Junction Temperature [5C]

ID, Drain Current [A]

VDS, Drain−Source Voltage

EOSS [mJ]

TJ, Junction Temperature [5C]

RDS(ON), [Normalized]

Drain−Source On−Resistance

ID, Drain Current [A]

TC, Case Temperature [5C]

VDS, Drain to Source Voltage

0.8

0.9

1.0

1.1

1.2

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.01

0.1

100

10 ms

1 ms

Operation in This Area

is Limited by RDS(on)

Notes:

1. VDS = 0 V

2. ID = 10 mA

Notes:

1. VDS = 10 V

2. ID = 8.5 A

Notes:

1. TC = 25°C

2. TJ = 150°C

3. Single Pulse

30 ms

100 ms

−50 0 50 100 150 −50 0 50 100 150

1 10 100 1000 25 50 75 100 125 150

0 130 260 390 520 650

FCPF190N65S3R0L

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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 12. Transient Thermal Response Curve

r(t), Normalized Effective Transient

Thermal Resistance

t, Rectangular Pulse Duration (sec)

−510

−410

−310

−210

−1100101102

0.001

0.01

0.1

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

Notes:

ZqJC(t) = r(t) × RqJC

RqJC = 3.76°C/W

Peak TJ = PDM × ZqJC(t) + TC

Duty Cycle, D = t1 / t2

PDM

FCPF190N65S3R0L

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Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms

VDS

VGS

DUT

VDD

VDS

VGS

10%

90%

10%

90% 90%

ton toff

trtf

td(on) td(off)

Qgd

Qgs

VGS

Charge

VDS

VGS

DUT

IG = Const.

VDD

VDS

DUT

VGS

VDD

Time

IAS

BVDSS

ID(t)

VDS(t)

EAS +1

@LIAS

FCPF190N65S3R0L

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Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDD

ISD

VSD

−

VGS

Same Type

as DUT

− dv/dt controlled by RG

− ISD controlled by pulse period

Driver

VGS

(Driver)

ISD

(DUT)

VDS

(DUT) VSD

IRM

10 V

di/dt

VDD

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode

Forward Voltage Drop

D+

Gate Pulse Width

Gate Pulse Period

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or

other countries.

TO−220 FULLPAK 3LD

CASE 340BF

ISSUE O

DATE 31 AUG 2016

4.60

4.30

10.70

10.30

3.00

2.60

3.40

3.00

10.30

9.80

0.90

0.50 (3X)

2.74

2.34 (2X)

2.14

3.30

2.70 B

1.20

1.00

1.20

0.90

(2X)

B19.00

17.70

0.50MA

2.90

2.50

B15.70

15.00

2.70

2.30

B0.60

0.40

6.60

6.20

1 X 45°

NOTES:

A. EXCEPT WHERE NOTED CONFORMS TO

EIAJ SC91A.

BDOES NOT COMPLY EIAJ STD. VALUE.

C. ALL DIMENSIONS ARE IN MILLIMETERS.

D. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

E. DIMENSION AND TOLERANCE AS PER ASME

Y14.5−2009.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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DOCUMENT NUMBER:

DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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TO−220 FULLPAK 3LD

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