Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 600V
▼ Fast Switching Characteristics RDS(ON) 12Ω
▼ Simple Drive Requirement ID1A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
EAR Repetitive Avalanche Energy mJ
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4.3 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data & specifications subject to change without notice
201010134
1
Storage Temperature Range -55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
3
29
Linear Derating Factor 0.232
+30
1
0.8
AP01L60H/J
0.5
Rating
600
RoHS-compliant Product
-55 to 150
Parameter
1
0.5
Parameter
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01L60J) is available for low-profile applications.
GDSTO-251(J)
GDSTO-252(H)
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V
∆BVDSS/∆TjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.8 - V/℃
RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=0.5A - - 12 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=0.5A - 0.8 - S
IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA
QgTotal Gate Charge3ID=1A - 4.0 - nC
Qgs Gate-Source Charge VDS=480V - 1.0 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 1.1 - nC
td(on) Turn-on Delay Time3VDD=300V - 6.6 - ns
trRise Time ID=1A - 5.0 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 11.7 - ns
tfFall Time RD=300Ω- 9.2 - ns
Ciss Input Capacitance VGS=0V - 170 - pF
Coss Output Capacitance VDS=25V - 30.7 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 5.1 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1 A
ISM Pulsed Source Current ( Body Diode )1--5
A
VSD Forward On Voltage3Tj=25℃, IS=1A, VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=1.0A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP01L60H/J
4.Surface mounted on 1 in2 copper pad of FR4 board
2
AP01L60H/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.5
0.7
0.9
1.1
1.3
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=0.5A
VG=10V
0.0
0.5
1.0
1.5
0 122436
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC 10V
6.0V
5.5V
5.0V
VG=4.5V
0.0
0.3
0.5
0.8
1.0
010203040
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 10V
5.0V
4.5V
VG=4.0V
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCTj = 25 oC
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150
Tj , Junction Temperature ( oC )
VGS(th) (V)
AP01L60H/J
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
4
8
12
16
0 1.5 3 4.5 6
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=1A
VDS =480V
1
10
100
1000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
Q
VG
10V
QGS QGD
QG
Charge
td(on) trtd(off)tf
VDS
VGS
10%
90%
0.01
0.1
1
10
10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
