TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK10A60D Unit: mm Switching Regulator Applications * * * * Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 Pulse (Note 1) IDP 40 Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy (Note 2) EAS 363 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Drain current A 1: Gate 2: Drain 3: Source JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/''Derating Concept and Methods'') and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics 2 Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 6.36 mH, RG = 25 , IAR = 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2008-04 1 2013-11-01 TK10A60D Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 30 V, VDS = 0 V 1 A Drain cut-off current IDSS VDS = 600 V, VGS = 0 V 10 A Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Gate threshold voltage Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 5 A 0.58 0.75 Forward transfer admittance |Yfs| VDS = 10 V, ID = 5 A 1.5 6.0 S Input capacitance Ciss 1350 Reverse transfer capacitance Crss 6 Output capacitance Coss 135 22 55 15 100 25 16 9 Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton VOUT RL = 40 50 Switching time Fall time ID = 5 A 10 V VGS 0V tr tf pF ns VDD 200 V Turn-off time toff Duty 1%, tw = 10 s Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD 400 V, VGS = 10 V, ID = 10 A nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR 10 A Pulse drain reverse current IDRP 40 A IDR = 10 A, VGS = 0 V -1.7 V (Note 1) Forward voltage (diode) VDSF Reverse recovery time trr IDR = 10 A, VGS = 0 V, 1300 ns Qrr dIDR/dt = 100 A/s 12 C Reverse recovery charge Marking Note 4: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K10A60D Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 TK10A60D ID - VDS ID - VDS 10 20 COMMON SOURCE 10,8 (A) PULSE TEST 8 6.25 6 6 4 5.5 2 5 COMMON SOURCE 8 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID 6.5 7 Tc = 25C 7.5 16 Tc = 25C 7 PULSE TEST 6.75 12 6.5 8 6 5.5 4 VGS = 5 V VGS = 4.5V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE 0 0 10 VDS (V) 10 20 ID - VGS VDS (V) DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID VDS = 20 V PULSE TEST 12 8 Tc = -55C 100 25 0 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS COMMON SOURCE Tc = 25C 8 PULSE TEST 6 ID = 10 A 4 5 2 2.5 10 (V) 4 8 DRAIN-SOURCE ON RESISTANCE RDS (ON) () FORWARD TRANSFER ADMITTANCE Yfs (S) 16 VGS 20 (V) RDS (ON) - ID 10 COMMON SOURCE VDS = 20 V PULSE TEST Tc = -55C 25 100 1 0.1 1 12 GATE-SOURCE VOLTAGE Yfs - ID 0.1 (V) 10 0 0 100 10 VDS VDS - VGS COMMON SOURCE 4 50 40 DRAIN-SOURCE VOLTAGE 20 16 30 DRAIN CURRENT ID Tc = 25C PULSE TEST 1 0.1 0.1 100 10 (A) COMMON SOURCE VGS = 10 V, 15V 1 10 DRAIN CURRENT ID 3 100 (A) 2013-11-01 TK10A60D RDS (ON) - Tc IDR - VDS 100 COMMON SOURCE DRAIN REVERSE CURRENT IDR (A) DRAIN-SOURCE ON RESISTANCE RDS (ON) ( ) 2.5 VGS = 10 V 2.0 PULSE TEST 1.5 ID=10A 5A 1.0 2.5A 0.5 0 -80 -40 0 40 80 CASE TEMPERATURE 120 Tc COMMON SOURCE Tc = 25C PULSE TEST 10 1 10 5 0.1 0 160 (C) 3 VGS = 0, -1 V 1 -0.2 -0.4 -0.6 -0.8 -1.0 DRAIN-SOURCE VOLTAGE CAPACITANCE - VDS -1.2 VDS -1.4 (V) Vth - Tc 5 10000 Coss 100 Crss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 10 DRAIN-SOURCE VOLTAGE COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 100 VDS 2 (V) -40 VDS (V) DRAIN-SOURCE VOLTAGE DRAIN POWER DISSIPATION PD (W) 60 40 20 80 120 CASE TEMPERATURE 80 120 Tc 160 (C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 80 40 40 CASE TEMPERATURE PD - Tc 0 0 0 160 Tc 200 (C) 500 400 20 VDS 16 300 12 VDD = 100 V 400 200 Common source 200 VGS Tc = 25C 100 0 0 20 TOTAL GATE CHARGE 4 4 Pulse test 10 8 ID= 10 A 0 40 30 Qg (V) 1 3 VGS 1 0.1 4 GATE-SOURCE VOLTAGE CAPACITANCE GATE THRESHOLD VOLTAGE Vth (V) 1000 C (pF) Ciss (nC) 2013-11-01 TK10A60D NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth - tw 10 1 Duty = 0.5 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T 0.01 0.001 10 SINGLE PULSE 100 1m Duty = t/T Rth (ch-c) = 2.78C/W 10m PULSE WIDTH 100m 1 10 tw (s) SAFE OPERATING AREA EAS - Tch 100 500 ID max (pulsed) * 1 ms * DRAIN CURRENT ID (A) 10 AVALANCHE ENERGY EAS (mJ) 100 s * ID max (continuous) 1 DC operation Tc = 25C 0.1 400 300 200 100 0 25 0.01 50 75 100 125 150 *: SINGLE NONREPETITIVE PULSE CHANNEL TEMPERATURE (INITIAL) Tch (C) Tc = 25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN 0.001 TEMPERATURE. 10 1 VDSS max 100 DRAIN-SOURCE VOLTAGE 15 V 1000 VDS (V) BVDSS IAR -15 V VDD TEST CIRCUIT RG = 25 VDD = 90 V, L = 6.36mH 5 VDS WAVEFORM AS = 1 B VDSS L I2 B - 2 V VDSS DD 2013-11-01 TK10A60D RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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