122
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5002
1500
800
6
7(Pulse14)
3.5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO1
ICBO2
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
COB
2SC5002
100max
1max
100max
800min
8min
4to9
5max
1.5max
4typ
100typ
Unit
µ
A
mA
µ
A
V
V
V
MHz
pF
Conditions
VCB=1200V
VCB=1500V
VEB=6V
IC=10mA
VCE=5V, IC=1A
VCE=5V, IC=5A
IC=5A, IB=1.2A
IC=5A, IB=1.2A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC5002
(Ta=25°C) (Ta=25°C)
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
(Ω)
50
IC
(A)
4
VBB2
(V)
–5
IB2
(A)
–1.6
tstg
(
µ
s)
4.0max
tf
(
µ
s)
0.2max
IB1
(A)
0.8
VBB1
(V)
10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0±0.3
16.2
9.5±0.2
5.5
15.6±0.2 5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
hFE–IC Characteristics
(Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IC Characteristics (Typical)
Pc–Ta Derating
0
7
6
4
2
0 1.50.5 1.0
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=5V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
80
60
40
20
3.5
00 50 100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
Safe Operating Area (Single Pulse)
500100 1000
1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
0.02 0.10.05 0.5 1 5 7
2
5
10
100
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=5V)
125˚C
25˚C
–30˚C
tstg•tf–IC Characteristics
(Typical)
0.2 1 50.5 7
0.1
0.5
5
20
10
1
Switching Time tstg•tf(µs)
Collector Current IC(A)
tstg
tf
VCC=200V
IC:IB1:–IB2 =5:1: 2
100µs
0
3
2
1
0.02 0.1 0.5 1 105
Collector Current IC(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
(IC:IB=5 :1)
Reverse Bias Safe Operating Area
100 50050 20001000
1
0.5
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
Time t(ms)
0.1
1
3
0.5
1 10 100 1000 2000
Transient Thermal Resistance θj-a(˚C/W)
θj-a–t Characteristics
IC–VCE Characteristics
(Typical)
0
0
2
1
7
3
4
5
6
2134
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
1.5A
1.2A
400mA
700mA
200mA
I
B
=100mA
..
