OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 10/2010
Page 1 of 3
Plastic Infrared Emitting Diode
OP266FAA Series
Features:
• T-1 (3 mm) package style
• Narrow irradiance pattern
• Dome lens
• Higher power output than GaAs at equivalent drive currents
• 850 nm diode
Description:
Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
molded in an IR transmissive clear or amber-tinted epoxy package with a dome lens. Devices feature a narrow
source irradiance pattern and a variety of electrical characteristics. The small T-1 package style makes these
devices ideal for space-limited applications.
These devices are mechanically and spectrally matched to other OPTEK products as follows:
OP266 devices conform to the OP 506 and OP535 series devices.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
RoHS
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
Ordering Information
Part
Number LED Peak
Wavelength Output Power (mW/
cm2) Min / Max IF (mA)
Typ / Max Total Beam
Angl e Lead
Length
OP266FAA
850 nm
5.5 / NA
20 / 50 18° 0.50”
OP266FAB 7.5 / 12.5
OP266FAC 11.5 / 16.5
OP266FAD 15.5 / NA
Applications:
• Space-limited applications
• Applications requiring coupling efficiency
• Battery-operated or voltage-limited
applications
1
2
Pin # LED
1 Cathode
2 Anode
CONTAINS POLYSULFONE
To avoid stress cracking, we suggest using
ND Industries’ Vibra-Tite for thread-locking.
Vibra-Tite evaporates fast without causing structural
failure in OPTEK'S molded plastics.
NOTES:
1. Outside discrete shell is polysulfone CLEAR.
2. This LED is built with a 0.011 X 0.011 GaAlAs chip.
3. Max allowable epoxy miniscus is 0.030”.
4. For identification purposes, Cathode lead is .065” ± .035”
longer than the anode lead.
DISCRETE PIN OUT
1 CATHODE
2 ANODE
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 10/2010
Page 2 of 3
Plastic Infrared Emitting Diode
OP266FAA Series
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
EE (APT) mW/cm2
Apertured Radiant Incidence
OP266FAA
OP266FAB
OP266FAC
OP266FAD
5.50
7.50
11.50
15.50
-
-
-
-
-
12.5
16.5
-
IF = 20 mA
Aperture = 0.081” diameter
Distance = 0.590” from seating
surface to aperture surface
VF Forward Voltage - - 1.80 V IF = 20 mA
IR Reverse Current - 10 - µA VR= 10 V
λP Wavelength at Peak Emission - 850 - nm IF = 10 mA
∆λP /∆T Spectral Shift with Temperature - ±0.18 - nm/°C IF = Constant
θHP Emission Angle at Half Power Points - 18 - Degree IF = 20 mA
tr Output Rise Time - 10 - ns IF(PK)=100 mA, PW=10 µs, D.C.=10.0%
tf Output Fall Time - 10 - ns
Notes:
1. RMA flux is recommended. Duration can be extended to 10 second maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. EE(APT) is a measurement of the average apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular
to and centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily
uniform within the measured area.
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage and Operating Temperature Range -40o C to +100o C
Reverse Voltage 2.0 V
Continuous Forward Current 50 mA
Peak Forward Current (1 µs pulse width, 300 pps) 3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)
Power Dissipation 100 mW(2)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 10/2010
Page 3 of 3
Plastic Infrared Emitting Diode
OP266FAA Series
OP266F (AA, AB, AC, AD)
Forward Voltage vs Forward Current vs
Temperature
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0 102030405060708090100
Forward Current (mA)
Typical Forward Voltage (V)
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
Optical Power vs I
F
vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 102030405060708090100
Forward Current I
F
(mA)
Normalized Optical Power
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
Normal iz ed at 50 m A and 20° C
Relative Radiant Intens ity vs. Angul ar
Displacement
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-20 -15 -10 -5 0 5 10 15 20
Angul ar D i sp l ace ment (Deg ree s)
Relative Radiant Intensity
Distance vs Output Power vs Forward Current
0
1
2
3
4
5
6
0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''
Distance (inches)
Normalized Output Power
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
90 mA
100 mA
Normalized at 1" and 50 m
A
Forward Current
